DATA SHEET

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General Purpose
Transistors COLLECTOR
3

NPN Silicon 2
BASE

2N3903, 2N3904 1
EMITTER
Features
• Pb−Free Packages are Available*

TO−92
MAXIMUM RATINGS CASE 29
STYLE 1
Rating Symbol Value Unit
Collector −Emitter Voltage VCEO 40 Vdc 1
12 2
Collector −Base Voltage VCBO 60 Vdc 3 3
STRAIGHT LEAD BENT LEAD
Emitter −Base Voltage VEBO 6.0 Vdc BULK PACK TAPE & REEL
Collector Current − Continuous IC 200 mAdc AMMO PACK

Total Device Dissipation PD

@ TA = 25°C 625 mW
Derate above 25°C 5.0 mW/°C MARKING DIAGRAMS
Total Device Dissipation PD
@ TC = 25°C 1.5 W
Derate above 25°C 12 mW/°C 2N
390x
Operating and Storage Junction TJ, Tstg −55 to +150 °C YWWG
Temperature Range G

THERMAL CHARACTERISTICS (Note 1)

Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W x = 3 or 4
Y = Year
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W WW = Work Week
Stresses exceeding those listed in the Maximum Ratings table may damage the G = Pb−Free Package
device. If any of these limits are exceeded, device functionality should not be (Note: Microdot may be in either location)
assumed, damage may occur and reliability may be affected.
1. Indicates Data in addition to JEDEC Requirements.

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please
download the onsemi Soldering and Mounting Techniques Reference Manual,
SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:

August, 2021 − Rev. 9 2N3903/D
 2N3903, 2N3904

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − Vdc
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL − 50 nAdc
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − 50 nAdc
ON CHARACTERISTICS
DC Current Gain (Note 2) hFE −
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N3903 20 −
2N3904 40 −
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3903 35 −
2N3904 70 −
(IC = 10 mAdc, VCE = 1.0 Vdc) 2N3903 50 150
2N3904 100 300
(IC = 50 mAdc, VCE = 1.0 Vdc) 2N3903 30 −
2N3904 60 −
(IC = 100 mAdc, VCE = 1.0 Vdc) 2N3903 15 −
2N3904 30 −
Collector −Emitter Saturation Voltage (Note 2) VCE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) − 0.2
(IC = 50 mAdc, IB = 5.0 mAdc − 0.3
Base −Emitter Saturation Voltage (Note 2) VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85
(IC = 50 mAdc, IB = 5.0 mAdc) − 0.95
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product fT MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N3903 250 −
2N3904 300 −
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF
Input Impedance hie kW
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 1.0 8.0
2N3904 1.0 10
Voltage Feedback Ratio hre X 10− 4
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 0.1 5.0
2N3904 0.5 8.0
Small−Signal Current Gain hfe −
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 50 200
2N3904 100 400
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 40 mmhos
Noise Figure NF dB
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz) 2N3903 − 6.0
2N3904 − 5.0
SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc, td − 35 ns
Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr − 35 ns
Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc, 2N3903 ts − 175 ns
IB1 = IB2 = 1.0 mAdc) 2N3904 − 200

Fall Time tf − 50 ns
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.

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 2N3903, 2N3904

ORDERING INFORMATION
Device Package Shipping†
2N3903RLRM TO−92 2000 / Ammo Pack
2N3904 TO−92 5000 Units / Bulk
2N3904G TO−92 5000 Units / Bulk
(Pb−Free)

2N3904RLRA TO−92 2000 / Tape & Reel

2N3904RLRAG TO−92 2000 / Tape & Reel
(Pb−Free)

2N3904RLRM TO−92 2000 / Ammo Pack

2N3904RLRMG TO−92 2000 / Ammo Pack
(Pb−Free)

2N3904RLRP TO−92 2000 / Ammo Pack

2N3904RLRPG TO−92 2000 / Ammo Pack
(Pb−Free)

2N3904RL1G TO−92 2000 / Tape & Reel

(Pb−Free)

2N3904ZL1 TO−92 2000 / Ammo Pack

2N3904ZL1G TO−92 2000 / Ammo Pack
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

+3 V
DUTY CYCLE = 2%
300 ns
+10.9 V 275

10 k
-0.5 V
< 1 ns CS < 4 pF*

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Equivalent Test Circuit

+3 V
10 < t1 < 500 ms t1
+10.9 V
DUTY CYCLE = 2%
275

10 k
0

1N916 CS < 4 pF*

-9.1 V′
< 1 ns

* Total shunt capacitance of test jig and connectors

Figure 2. Storage and Fall Time Equivalent Test Circuit

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 2N3903, 2N3904

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C
TJ = 125°C

10 5000
VCC = 40 V
3000
7.0 IC/IB = 10
2000
CAPACITANCE (pF)

5.0

Q, CHARGE (pC)
1000
700
Cibo
3.0 500

300 QT
2.0 Cobo 200
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance Figure 4. Charge Data

500 500
IC/IB = 10 VCC = 40 V
300 300
IC/IB = 10
200 200

100 100
t r, RISE TIME (ns)

70 tr @ VCC = 3.0 V 70
TIME (ns)

50 50

30 30
40 V
20 20
15 V
10 10
7 td @ VOB = 0 V 2.0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time Figure 6. Rise Time

500 500
t′s = ts - 1/8 tf VCC = 40 V
300 IB1 = IB2 300
IC/IB = 20 IC/IB = 10 IB1 = IB2
200 200
IC/IB = 20
t s′ , STORAGE TIME (ns)

t f , FALL TIME (ns)

100 100
70 70
50 IC/IB = 20 50
IC/IB = 10 IC/IB = 10
30 30
20 20

10 10
7 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time Figure 8. Fall Time

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 2N3903, 2N3904

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12 14
SOURCE RESISTANCE = 200 W f = 1.0 kHz IC = 1.0 mA
IC = 1.0 mA 12
10
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

10 IC = 0.5 mA
8 SOURCE RESISTANCE = 200 W
IC = 0.5 mA IC = 50 mA
8
6 SOURCE RESISTANCE = 1.0 k IC = 100 mA
IC = 50 mA 6
4
4

2 SOURCE RESISTANCE = 500 W 2

IC = 100 mA
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)

Figure 9. Figure 10.

h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100
hoe, OUTPUT ADMITTANCE (m mhos)

50

200
h fe , CURRENT GAIN

20

10
100

70 5

50
2

30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain Figure 12. Output Admittance

20 10
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )

7.0
h ie , INPUT IMPEDANCE (k OHMS)

10
5.0
5.0
3.0

2.0 2.0

1.0
1.0
0.5
0.7

0.2 0.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio

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 2N3903, 2N3904

TYPICAL STATIC CHARACTERISTICS

2.0
h FE, DC CURRENT GAIN (NORMALIZED)

TJ = +125°C VCE = 1.0 V

1.0 +25°C

0.7
0.5 -55°C

0.3

0.2

0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0
TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)

Figure 16. Collector Saturation Region

1.2 1.0
TJ = 25°C
1.0 VBE(sat) @ IC/IB =10 0.5 +25°C TO +125°C
qVC FOR VCE(sat)
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)

0.8 0 -55°C TO +25°C

VBE @ VCE =1.0 V
0.6 -0.5
-55°C TO +25°C
0.4 -1.0
VCE(sat) @ IC/IB =10 +25°C TO +125°C
0.2 -1.5 qVB FOR VBE(sat)

0 -2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 17. “ON” Voltages Figure 18. Temperature Coefficients

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 MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
SCALE 1:1 ISSUE AM
DATE 09 MAR 2007

12 1
2
3 3
STRAIGHT LEAD BENT LEAD
BULK PACK TAPE & REEL
AMMO PACK

NOTES:
A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
BULK PACK Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION X−X R 0.115 --- 2.93 ---
1 N V 0.135 --- 3.43 ---

NOTES:
A B BENT LEAD
R 1. DIMENSIONING AND TOLERANCING PER
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
AMMO PACK 3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
P AND BEYOND DIMENSION K MINIMUM.
T
MILLIMETERS
SEATING
PLANE K DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
X X D G 2.40 2.80
J 0.39 0.50
G K 12.70 ---
J N 2.04 2.66
V P 1.50 4.00
C R 2.93 ---
V 3.43 ---
SECTION X−X
1 N

STYLES ON PAGE 2

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42022B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−92 (TO−226) PAGE 1 OF 2

onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

© Semiconductor Components Industries, LLC, 1998 www.onsemi.com

 TO−92 (TO−226)
CASE 29−11
ISSUE AM
DATE 09 MAR 2007

STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:

PIN 1. EMITTER PIN 1. BASE PIN 1. ANODE PIN 1. CATHODE PIN 1. DRAIN
2. BASE 2. EMITTER 2. ANODE 2. CATHODE 2. SOURCE
3. COLLECTOR 3. COLLECTOR 3. CATHODE 3. ANODE 3. GATE

STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10:

PIN 1. GATE PIN 1. SOURCE PIN 1. DRAIN PIN 1. BASE 1 PIN 1. CATHODE
2. SOURCE & SUBSTRATE 2. DRAIN 2. GATE 2. EMITTER 2. GATE
3. DRAIN 3. GATE 3. SOURCE & SUBSTRATE 3. BASE 2 3. ANODE

STYLE 11: STYLE 12: STYLE 13: STYLE 14: STYLE 15:
PIN 1. ANODE PIN 1. MAIN TERMINAL 1 PIN 1. ANODE 1 PIN 1. EMITTER PIN 1. ANODE 1
2. CATHODE & ANODE 2. GATE 2. GATE 2. COLLECTOR 2. CATHODE
3. CATHODE 3. MAIN TERMINAL 2 3. CATHODE 2 3. BASE 3. ANODE 2

STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. ANODE PIN 1. COLLECTOR PIN 1. ANODE PIN 1. GATE PIN 1. NOT CONNECTED
2. GATE 2. BASE 2. CATHODE 2. ANODE 2. CATHODE
3. CATHODE 3. EMITTER 3. NOT CONNECTED 3. CATHODE 3. ANODE

STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25:
PIN 1. COLLECTOR PIN 1. SOURCE PIN 1. GATE PIN 1. EMITTER PIN 1. MT 1
2. EMITTER 2. GATE 2. SOURCE 2. COLLECTOR/ANODE 2. GATE
3. BASE 3. DRAIN 3. DRAIN 3. CATHODE 3. MT 2

STYLE 26: STYLE 27: STYLE 28: STYLE 29: STYLE 30:
PIN 1. VCC PIN 1. MT PIN 1. CATHODE PIN 1. NOT CONNECTED PIN 1. DRAIN
2. GROUND 2 2. SUBSTRATE 2. ANODE 2. ANODE 2. GATE
3. OUTPUT 3. MT 3. GATE 3. CATHODE 3. SOURCE

STYLE 31: STYLE 32: STYLE 33: STYLE 34: STYLE 35:
PIN 1. GATE PIN 1. BASE PIN 1. RETURN PIN 1. INPUT PIN 1. GATE
2. DRAIN 2. COLLECTOR 2. INPUT 2. GROUND 2. COLLECTOR
3. SOURCE 3. EMITTER 3. OUTPUT 3. LOGIC 3. EMITTER

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42022B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−92 (TO−226) PAGE 2 OF 2

onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

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© Semiconductor Components Industries, LLC, 1998 www.onsemi.com
 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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