ST 2N3905 / 2N3906
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors ST 2N3903 and ST 2N3904 are recommended. On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature Range
1)
Value 40 40 5 100 200 500
1)
Unit V V V mA mA mW
O O
-VCBO -VCEO -VEBO -IC -ICM Ptot Tj TS
150 -55 to +150
C C
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
G S P FORM A IS AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 07/12/2002
ST 2N3905 / 2N3906
Characteristics at Tamb=25 OC Symbol DC Current Gain at-VCE=1V, -IC=0.1mA at- VCE=1V, -IC=1mA at- VCE=1V,-IC=10mA at- VCE=1V,- IC=50mA at- VCE=1V,- IC=100mA Collector Saturation Voltage at -IC=10mA,-IB=1mA at -IC=50mA, -IB=5mA Base Saturation Voltage at -IC=10mA, -IB=1mA at -IC=50mA, -IB=5mA Collector Cutoff Current at -VEB=3V, -VCE=30V Emitter Cutoff Current at -VEB=3V, -VCE=30V Collector Base Breakdown Voltage at -IC=10A, IE=0 Collector Emitter Breakdown Voltage at -IC=1mA, IB=0 Emitter Base Breakdown Voltage at -IE=10A, IC=0 Gain Bandwidth Product
at -VCE=20V,-IC=10mA,f=100MHz ST 2N3905
Min. 30 60 40 80 50 100 30 60 15 30 40 40 5 200 250 -
Typ. -
Max. 150 300 0.25 0.4 0.85 0.95 50 50 4.5 10 250
1)
Unit -
ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906
hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE -VCEsat -VCEsat -VBEsat -VBEsat -ICEV -IEBV -V(BR)CBO -V(BR)CEO -V(BR)EBO fT fT CCBO CEBO RthA
V V V V nA nA V V V MHz MHz pF PF K/W
ST 2N3906 Collector Base Capacitance at -VCB=5V, f=100kHz Emitter Base Capacitance at -VEB=0.5V, f=100kHz Thermal Resistance Junction to Ambient
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
G S P FORM A IS AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 07/12/2002
ST 2N3905 / 2N3906
Capacitance
10 5000
VCC=40V I C/I B =10
Charge Data
Capacitance (pF)
5 Cibo
Q, Charge (pC)
Cobo
1000
QT
100 1 0.1 1 10 40 50
QA
1
TJ =25 C TJ =125 C
10
100
200
Reverse Bias (V) Turn-On Time
500
I C/I B =10
IC (mA) Fall Time
500
VCC=40V I B1 =I B2
100
Fall Time (ns)
100
Time (ns)
tr@VCC=3V
I C/I B =20 I C/I B =10
15V 40V
10
td@VOB=0V
2V
10 5
10
100
200
10
100
200
IC (mA)
IC (mA)
Noise Figure Variations
(VCE=-5V, Ta=25 C, Bandwidth=1Hz)
Noise Figure Variations
(VCE=-5V, Ta=25 C, Bandwidth=1Hz)
5
source resistance=200 Ic=1mA
12
f=1kHz Ic=1mA
4 3
source resistance=200 Ic=0.5mA
10
Ic=0.5mA
NF (dB)
NF (dB)
source resistance=200 Ic=50 A
6 4
Ic=50 A
2 1 0
source resistance=200 Ic=100 A
2 0 0.1 1 10
Ic=100 A
0.1
10
100
100
f (kHz)
Rg, source resistance (k OHMS)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 07/12/2002
ST 2N3905 / 2N3906
h Parameters Current Gain
300
(VCE=-10V, Ta=25 C, f=1kHz)
Output Amittance
100
hoe, Output Admittance( mhos)
50
200
hFE
100
20
10
30 0.1 1
10
0.1
10
Ic (mA)
Ic (mA)
Input Impedance
hre, Voltage Feedback Ratio (x 10 -4 )
20 10 5
Voltage Feedback Ratio
hie, Input Impedance (k OHMS)
10
2 1
0.2 0.1
10
0.5 0.1
10
Ic (mA)
Ic (mA)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 07/12/2002
ST 2N3905 / 2N3906
DC Current Gain
2 TJ=125 C 1
VCE=1V
hFE (Normalized)
25 C -55 C
0.2 0.1 0.1
10
100
200
I C (mA)
Collector Saturation Region
1
TJ =25 C
0.8
I C=1mA
30mA 100mA
0.6
VCE ( V )
0.4 0.2 0
10mA
0.001
0.1
10
I B (mA)
"On" Voltages
TJ =25 C VBE (sat)@I C/I B =10
Temperature Coefficients
Temperature Coefficients (mV/ C)
1 0.5 0
-55 C to 25 C
VC
1 0.8
for VCE(sat)
25 C to 125 C
VBE @VCE=1V
Voltage ( V )
0.6 0.4 0.2 0
VCE(sat)@I C/I B =10
-0.5
25 C to 125 C
-1
-55 C to 25 C
-1.5 -2
VB
for VBE(sat)
10
100
200
40
80
120
160
200
IC (mA)
IC (mA)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 07/12/2002
