ST 2SC945

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications.

The transistor is subdivided into five groups, R, O, Y,

P and L, according to its DC current gain. As
complementary type the PNP transistor ST 2SA733
is recommended.

On special request, these transistors can be

manufactured in different pin configurations.

TO-92 Plastic Package

Weight approx. 0.19g

Absolute Maximum Ratings (T a = 25? )

Symbol Value Unit

C o l l e c t o r B a s e V o l ta g e VCBO 60 V
Collector Emitter Voltage VCEO 50 V
Emitter Base Voltage VEBO 5 V
Collector Current IC 150 mA
Power Dissipation Ptot 250 mW
O
Junction Temperature Tj 150 C
O
Storage T emperature Range TS -55 to +150 C

G S P FORM A IS AVAILABLE

Тел.: (495) 795-0805

Факс: (495) 234-1603
РАДИОТЕХ Эл. почта: info@rct.ru
Веб: www.rct.ru

®
ST 2SC945

Characteristics at Tamb=25 OC

Symbol Min. Typ. Max. Unit

DC Current Gain
at VCE=6V, IC=1mA
Current Gain Group R hFE 40 - 80 -
O hFE 70 - 140 -
Y hFE 120 - 240 -
P hFE 200 - 400 -
L hFE 350 - 700 -
Collector Base Breakdown Voltage
at IC=100µA V(BR)CBO 60 - - V
Collector Emitter Breakdown Voltage
at IC=10mA V(BR)CEO 50 - - V
Emitter Base Breakdown Voltage
at IE=10µA V(BR)EBO 5 - - V
Collector Cutoff Current
at VCB=40V ICBO - - 0.1 µA
Emitter Cutoff Current
at VEB=3V IEBO - - 0.1 µA
Collector Saturation Voltage
at IC=100mA, IB=10mA VCE(sat) - 0.15 0.3 V
Gain Bandwidth Product
at VCE=6V, IC=10mA fT - 300 - MHz
Output Capacitance
at VCB=6V, f=1MHz COB - 2.5 - pF
Noise Figure
at VCE=6V, IE=0.5mA
at f=1KHz, RS=500Ω NF - 4 - dB

G S P FORM A IS AVAILABLE

SEMTECH ELECTRONICS LTD.

(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/07/2004
ST 2SC945

Total power dissipation Normalized collector cutoff current

vs. ambient temperature vs. ambient temperature
300
10000
Free air

Normalized collector cutoff current

250

1000
200
P tot (mW)

150
100

100

I CBO(Ta=25 C)
10
50

I CBO(Ta)
0 25 50 75 125 150 1
100
0 20 40 60 80 100 120 140 160
Tamb ( C)
Tamb ( C)

Collector current vs. Collector current vs.

collector emitter voltage collector emitter voltage
100 1.0 0.9 10
0.8 4.5
0.7
0.6 4
80 8
0.5 3.5
0.4 3
60 6 2.5
0.3
Ic - mA

Ic - mA

2
40 4
0.2 1.5
1
20 2
I B =0.1mA
IB=0.5 A
0 0
0 0.4 0.8 1.2 1.6 2.0 0 10 20 30 40 50
VCE, V VCE, V

h FE - I C h FE - I C
360 360
pulse d VCE=6V
320 320 pulsed

280 280
Ta=75 C
DC CURRENT GAIN

DC CURRENT GAIN

240 240
VCE=6.0V
200 200
25 C
160 3.0V 160

120 2.0V 120 -25 C

80 1.0V 80
0.5V
40 40

0 0
0.01 0.1 1 10 100 0.01 0.1 1 10 100

COLLECTOR CURRENT, mA COLLECTOR CURRENT, mA

SEMTECH ELECTRONICS LTD.

(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/07/2004
ST 2SC945

Collector current vs. base emitter voltage

Normalized h-parameters
100 vs. collector current
VCE=6V 10
VCE=6V
pulsed
Hie f=1kHz
he(Ic)
He=
10 he(Ic=1mA)

Normalized h-parameters
Hre

C
Ic - mA

75

25 C
Hoe

-25
Ta=
1 Hfe
1
Hfe

Hoe
0.1 Hre

Hie

0.01
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.1 1 10
VBE , V Ic , mA

Collector and base saturation

voltage vs. collector current fT - I E
10 10000
pulsed

1 IC/IB=10 1000
VBE(sat)
VBE(sat) , V
VCE(sat) , V

20 50
fT - MHz

VCE=10V

50
VCE(sat) 20 6V
0.1 100
2V
IC/IB=10 1V

0.01 10
0.1 1 10 100 -0.1 -1 -10 -100

Collector Current, mA Emitter Current, mA

Small signal current gain

VEB, VCB vs. Cib, Cob vs. DC current gain
100 1000
f=1MHz VCE=6V
Ic=1mA
f=1kHz
800
Small signal current gain

Cib(Ic=0)
10
Cib, Cob - pF

600

Cob(IE=0)
400
1

200

0.1
0.1 1 10 100 0 200 400 600 800 1000

VEB, VCB - V DC current gain

SEMTECH ELECTRONICS LTD.

(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/07/2004
ST 2SC945

Input impedance, voltage feedback

Normalized h-parameters vs.
ratio and output admittance vs.
collector emitter voltage
small signal current gain
100 50 50
hre - Voltage feedback ratio (x10 -4 )

3
VCE=6V
hoe - Output admittance ( s)

Ic=1mA
Ic=1mA
hie - Input impedance(k )

Normalized h- parameters
f=1kHz
f=1kHz
80 40 40 he(VCE)
He= he(VCE=6V)

2
60 30 30
hoe
hoe hre hfe hie
40 20 20 hre
hie 1
hre hoe
hfe hie
20 10 10

0 0 0 200 400 600 800 1000 0 10 20 30

hfe - Small signal current gain VCE - V

SEMTECH ELECTRONICS LTD.

(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/07/2004