ST 2N3903 / 2N3904

NPN Silicon Epitaxial Planar Transistor

for switching and amplifier applications.

As complementary types the PNP transistors

ST 2N3905 and ST 2N3906 are recommended.

On special request, these transistors can be

manufactured in different pin configurations.

TO-92 Plastic Package

Weight approx. 0.19g

Absolute Maximum Ratings (T a = 25 oC)

Symbol Value Unit

Collector Base Voltage VCBO 60 V

Collector Emitter Voltage VCEO 40 V

Emitter Base Voltage VEBO 6 V
Collector Current IC 100 mA

Peak Collector Current ICM 200 mA

1)
Power Dissipation Ptot 500 mW
O
Junction Temperature Tj 150 C
O
Storage Temperature Range TS -55 to +150 C
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

G S P FORM A IS AVAILABLE

.: (495) 795-0805
: (495) 234-1603
- . : info@rct.ru
: www.rct.ru

ST 2N3903 / 2N3904

Characteristics at Tamb=25 oC

Symbol Min. Typ. Max. Unit

DC Current Gain
at VCE=1V, IC=0.1mA ST 2N3903 hFE 20 - - -
ST 2N3904 hFE 40 - - -
at VCE=1V, IC=1mA ST 2N3903 hFE 35 - - -
ST 2N3904 hFE 70 - - -
at VCE=1V, IC=10mA ST 2N3903 hFE 50 - 150 -
ST 2N3904 hFE 100 - 300 -
at VCE=1V, IC=50mA ST 2N3903 hFE 30 - - -
ST 2N3904 hFE 60 - - -
at VCE=1V, IC=100mA ST 2N3903 hFE 15 - - -
ST 2N3904 hFE 30 - -
Collector Saturation Voltage
at IC=10mA, IB=1mA VCEsat - - 0.2 V
at IC=50mA, IB=5mA VCEsat - - 0.3 V
Base Saturation Voltage
at IC=10mA, IB=1mA VBEsat - - 0.85 V
at IC=50mA, IB=5mA VBEsat - - 0.95 V
Collector Cutoff Current
at VEB=3V, VCE=30V ICEV - - 50 nA
Emitter Cutoff Current
at VEB=3V, VCE=4V IEBV - - 50 nA
Collector Base Breakdown Voltage
at IC=10A, IE=0 V(BR)CBO 60 - - V
Collector Emitter Breakdown Voltage
at IC=1mA, IB=0 V(BR)CEO 40 - - V
Emitter Base Breakdown Voltage
at IE=10A, IC=0 V(BR)EBO 6 - - V
Gain Bandwidth Product
at VCE=20V,IC=10mA,f=100MHz ST 2N3903 fT 250 - - MHz
ST 2N3904 fT 300 - - MHz
Collector Base Capacitance
at VCB=5V, f=100kHz CCBO - - 4 pF
Emitter Base Capacitance
at VEB=0.5V, f=100kHz CEBO - - 8 pF
1)
Thermal Resistance Junction to Ambient RthA - - 250 K/W
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

G S P FORM A IS AVAILABLE

SEMTECH ELECTRONICS LTD.

(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 16/06/2004
ST 2N3903 / 2N3904

h Parameters (VCE=10V, Ta=25 C, f=1kHz)

Current Gain Output Amittance

300 100

hoe, Output Admittance( mhos)

50
Current Gain

200
20

100 10

70 5
hfe

50
2

30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1 2.0 3.0 5.0 10
Collector Current Ic (mA) Collector Current Ic (mA)

Input Impedance Voltage Feedback Ratio

hre, Voltage Feedback Ratio (x 10 -4 )

10
20
7
hie, Input Impedance (kOHMS)

10
5
5
3

2 2

1
1
0.5
0.7

0.2 0.5
0.1 0.2 0.3 0.5 1 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1 2.0 3.0 5.0 10
Collector Current Ic (mA)
Collector Current Ic (mA)

SEMTECH ELECTRONICS LTD.

(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 16/06/2004
ST 2N3903 / 2N3904

DC Current Gain
2
VCE=1V
TJ=125C
1 25C
hFE (Normalized)

0.7
-55C
0.5

0.3

0.2

0.1
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 30 50 70 100 200

IC (mA)

Collector Saturation Region

1
TJ=25C
30mA
0.8

IC=1mA 100mA
0.6
VCE ( V )

0.4

10mA
0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10

IB (mA)

SEMTECH ELECTRONICS LTD.

(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 16/06/2004