JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
JC(T SOT-23 Plastic-Encapsulate Transistors
MMBT3904 TRANSISTOR (NPN)
FEATURES SOT–23
z Complementary to MMBT3906
MARKING:1AM
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter Value Unit
1. BASE
VCBO Collector-Base Voltage 60 V
2. EMITTER
VCEO Collector-Emitter Voltage 40 V
3. COLLECTOR
VEBO Emitter-Base Voltage 6 V
IC Collector Current 200 mA
PC Collector Power Dissipation 200 mW
RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55～+150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V
Collector cut-off current ICEX VCE=30V, VEB(off)=3V 50 nA
Collector cut-off current ICBO VCB= 60V, IE=0 100 nA
Emitter cut-off current IEBO VEB=5V, IC=0 100 nA
hFE(1) VCE=1V, IC=10mA 100 300
DC current gain hFE(2) VCE=1V, IC=50mA 60
hFE(3) VCE=1V, IC=100mA 30
Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 0.95 V
Transition frequency fT VCE=20V,IC=10mA, f=100MHz 300 MHz
VCC=3V, VBE(off)=-0.5V IC=10mA,
Delay time td 35 ns
IB1=1mA
VCC=3V, VBE(off)=-0.5V IC=10mA,
Rise time tr 35 ns
IB1=1mA
Storage time ts VCC=3V, IC=10mA, IB1= IB2=1mA 200 ns
Fall time tf VCC=3V, IC=10mA, IB1= IB2=1mA 50 ns
CLASSIFICATION OF hFE(1)
HFE 100-300
RANK L H
RANGE 100–200 200–300
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Typical Characteristics
Static Characteristic hFE —— IC
100 400
COMMON COMMON EMITTER
EMITTER VCE=1V
500uA Ta=25℃
(mA)
80 450uA Ta=100℃
300
hFE
400uA
IC
350uA
DC CURRENT GAIN
COLLECTOR CURRENT
60
300uA
250uA 200 Ta=25℃
40 200uA
150uA
100
20 100uA
IB=50uA
0 0
0 4 8 12 16 20 0.1 0.3 1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)
VCEsat —— IC VBEsat —— IC
600 1.2
COLLECTOR-EMITTER SATURATION
300
BASE-EMITTER SATURATION Ta=25℃
VOLTAGE VBEsat (V)
VOLTAGE VCEsat (mV)
0.8
Ta=100℃
100
Ta=100℃
Ta=25℃
0.4
30
β=10 β=10
10 0.0
1 3 10 30 100 200 1 3 10 30 100 300
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
IC —— VBE Cob/ Cib —— VCB/ VEB
100 9
COMMON EMITTER f=1MHz
VCE=1V IE=0/IC=0
30 Ta=25℃
(mA)
Cib
Ta=100℃
(pF)
IC
10
COLLECTOR CURRENT
C
CAPACITANCE
3 3
Cob
Ta=25℃
1
0.3
0.1 1
0.2 0.4 0.6 0.8 1.0 1.2 0.1 0.3 1 3 10 20
BASE-EMITTER VOLTAGE VBE (V) REVERSE VOLTAGE V (V)
fT —— IC PC —— Ta
300 250
VCE=20V
Ta=25℃
(MHz)
COLLECTOR POWER DISSIPATION
200
fT
TRANSITION FREQUENCY
200
PC (mW)
150
100
50
100 0
1 3 10 30 60 0 25 50 75 100 125 150
COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE Ta (℃ )
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SOT-23 Package Outline Dimensions
Dimensions In Millimeters Dimensions In Inches
Symbol
Min Max Min Max
A 0.900 1.150 0.035 0.045
A1 0.000 0.100 0.000 0.004
A2 0.900 1.050 0.035 0.041
b 0.300 0.500 0.012 0.020
c 0.080 0.150 0.003 0.006
D 2.800 3.000 0.110 0.118
E 1.200 1.400 0.047 0.055
E1 2.250 2.550 0.089 0.100
e 0.950 TYP 0.037 TYP
e1 1.800 2.000 0.071 0.079
L 0.550 REF 0.022 REF
L1 0.300 0.500 0.012 0.020
θ 0° 8° 0° 8°
SOT-23 Suggested Pad Layout
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SOT-23 Tape and Reel
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