MCC



omponents
21201 Itasca Street Chatsworth

BCW66H
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Features NPN Small

l Ideally Suited for Automatic Insertion
l 150oC Junction Temperature Signal Transistor
l Low Current, Low Voltage
l Epitaxial Planar Die Construction 330mW
Mechanical Data
l Case: SOT-23, Molded Plastic SOT-23
l Terminals: Solderable per MIL-STD-202, Method 208 A
D
l Marking: EH
l Weight: 0.008 grams ( approx.) C B

Maximum Ratings @ 25oC Unless Otherwise Specified

F E
Charateristic Symbol Value Unit
Collector-Emitter Voltage VCEO 45 V
G H J
Collector-Base Voltage VCBO 75 V
Emitter-Base Voltage VEBO 5 V K

DIMENSIONS
Collector Current(DC) IC 800 mA
INCHES MM
Peak Collector Current ICM 1000 mA DIM
A
MIN
.110
MAX
.120
MIN
2.80
MAX
3.04
NOTE

B .083 .098 2.10 2.64

Base Current(DC) IB 100 mA C .047 .055 1.20 1.40
D .035 .041 .89 1.03
Peak Base Current IBM 200 mA E .070 .081 1.78 2.05
F .018 .024 .45 .60
Power Dissipation@T s=79oC Pd 330 mW G
H
.0005
.035
.0039
.044
.013
.89
.100
1.12
Thermal Resistance, Junction to J .003 .007 .085 .180

Ambient Air
RθJA 285(1) o
C/W K .015 .020 .37 .51

Thermal Resistance, Junction to Suggested Solder

RθJS o
215 C/W Pad Layout
Soldering Point .031
.800
o
Operating & Storage Temperature Tj, TSTG -55~150 C .035
.900

Notes: .079
2.000
inches
mm
(1) Mounted on FR-4 printed-circuit board

.037
.950
.037
.950

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 BCW66H
MCC
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter Symbol Min. TYP. Max. Unit

DC Current Gain(1)
at VCE = 10V, IC = 100µA hFE 80 – – –
at VCE = 1V, IC = 10mA hFE 180 – – –
at VCE = 1V, IC = 100mA hFE 250 630 –
at VCE = 2V, IC = 500mA hFE 100
(1)
Collector-Emitter Saturation Voltage
at IC = 100mA, IB = 10mA VCEsat – – 0.3 V
at IC = 500mA, IB = 50mA VCEsat – – 0.7 V
Base-Emitter Saturation Voltage(1)
at IC = 100mA, IB = 10mA VBEsat – – 1.25 V
at IC = 500mA, IB = 50mA VBEsat – – 2 V
Collector-Emitter Breakdown Voltage
at IC = 10mA, IB = 0 V(BR)CEO 45 – – V
Collector-Base Breakdown Voltage
at IC = 10µA, IB = 0 V(BR)CBO 75 – – V
Emitter-Base Breakdown Voltage
5 – – V
at IE = 10µA, IC = 0 V(BR)EBO
Collector-Base Cut-off Current
at VCB = 45V, IE = 0 ICBO – – 20 nA
at VCB = 45V, IE = 0, TA = 150°C ICBO – – 20 µA

Emitter-Base Cut-off Current

IEBO – – 20 nA
at VEB = 4V, IC = 0
Gain-Bandwidth Product
at VCE = 10V, IC = 20mA, f = 100MHz fT – 100 – MHZ
Collector-Base Capacitance
CCB – 6 – pF
at VCB = 10V, f = 1MHz
Emitter-Base Capacitance
CEB – 60 – pF
at VEB = 0.5V, f = 1MHz
Note: (1) Pulse test: t ≤ 300µs, D = 2%

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