NJW3281G (NPN)

NJW1302G (PNP)
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The NJW3281G and NJW1302G are power transistors for high
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power audio, disk head positioners and other linear applications.
Features
• Exceptional Safe Operating Area 15 AMPERES
• NPN/PNP Gain Matching within 10% from 50 mA to 5 A COMPLEMENTARY
• Excellent Gain Linearity SILICON POWER TRANSISTORS
• High BVCEO 250 VOLTS 200 WATTS
• High Frequency
• These Devices are Pb−Free and are RoHS Compliant
PNP NPN
Benefits
• Reliable Performance at Higher Powers COLLECTOR 2, 4 COLLECTOR 2, 4
• Symmetrical Characteristics in Complementary Configurations
• Accurate Reproduction of Input Signal 1 1
• Greater Dynamic Range BASE BASE
• High Amplifier Bandwidth
Applications EMITTER 3 EMITTER 3
• High−End Consumer Audio Products
♦ Home Amplifiers MARKING
♦ Home Receivers DIAGRAM
• Professional Audio Amplifiers 4
♦ Theater and Stadium Sound Systems
♦ Public Address Systems (PAs)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) NJWxxxG
AYWW
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 250 Vdc
Collector−Base Voltage VCBO 250 Vdc TO−3P
Emitter−Base Voltage VEBO 5.0 Vdc CASE 340AB
STYLES 1,2,3
Collector−Emitter Voltage − 1.5 V VCEX 250 Vdc 1
2
Collector Current − Continuous IC 15 Adc 3 1 2 3
Collector Current − Peak (Note 1) ICM 30 Adc xxxx = 0281 or 0302
Base Current − Continuous IB 1.6 Adc G = Pb−Free Package
A = Assembly Location
Total Power Dissipation @ TC = 25°C PD 200 W
Derate Above 25°C 1.43 W/°C Y = Year
WW = Work Week
Operating and Storage Junction TJ, Tstg − 65 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS ORDERING INFORMATION

Characteristic Symbol Max Unit Device Package Shipping

Thermal Resistance, Junction−to−Case RqJC 0.625 °C/W NJW3281G TO−3P 30 Units/Rail
Thermal Resistance, Junction−to−Ambient RqJA 40 °C/W (Pb−Free)

Stresses exceeding Maximum Ratings may damage the device. Maximum NJW1302G TO−3P 30 Units/Rail
Ratings are stress ratings only. Functional operation above the Recommended (Pb−Free)
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

September, 2013 − Rev. 1 NJW3281/D
 NJW3281G (NPN) NJW1302G (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage VCEO(sus) Vdc
(IC = 100 mAdc, IB = 0) 250 − −

Collector Cutoff Current ICBO mAdc

(VCB = 250 Vdc, IE = 0) − − 50

Emitter Cutoff Current IEBO mAdc

(VEB = 5 Vdc, IC = 0) − − 5

SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased IS/b Adc
(VCE = 50 Vdc, t = 1 s (non−repetitive) 4 − −

ON CHARACTERISTICS
DC Current Gain hFE −
(IC = 100 mAdc, VCE = 5 Vdc) 75 − 150
(IC = 1 Adc, VCE = 5 Vdc) 75 − 150
(IC = 3 Adc, VCE = 5 Vdc) 75 − 150
(IC = 5 Adc, VCE = 5 Vdc) 60 − −
(IC = 8 Adc, VCE = 5 Vdc) 45 − −

Collector−Emitter Saturation Voltage VCE(sat) Vdc

(IC = 8 Adc, IB = 0.8 Adc) − 0.4 0.6

Base−Emitter On Voltage VBE(on) Vdc

(IC = 8 Adc, VCE = 5 Vdc) − − 1.5

DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) − 30 −

Output Capacitance Cob pF

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz) − − 600

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 NJW3281G (NPN) NJW1302G (PNP)

TYPICAL CHARACTERISTICS

PNP NJW1302G NPN NJW3281G

60 80
TJ = 25°C VCE = 10 V TJ = 25°C VCE = 10 V
ftest = 1 MHz ftest = 1 MHz
50
fTau, CURRENT BANDWIDTH

fTau, CURRENT BANDWIDTH

60
PRODUCT (MHz)

PRODUCT (MHz)
40
5V 5V
30 40

20
20
10

0 0
0.1 1 10 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. Typical Current Gain Figure 2. Typical Current Gain
Bandwidth Product Bandwidth Product

1000 1000
VCE = 5 V VCE = 5 V
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

125°C 125°C
25°C 25°C
100 100
−30°C −30°C

10 10
0.01 0.1 1 10 100 0.1 1 10 100
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain Figure 4. DC Current Gain

1000 1000
VCE = 20 V VCE = 20 V
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

125°C 125°C
25°C 25°C
100 100
−30°C
−30°C

10 10
0.01 0.1 1 10 100 0.1 1 10 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 5. DC Current Gain Figure 6. DC Current Gain

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 NJW3281G (NPN) NJW1302G (PNP)

TYPICAL CHARACTERISTICS

PNP NJW1302G NPN NJW3281G

1 1
COLLECTOR−EMITTER SATURA-

COLLECTOR−EMITTER SATURA-
5A
5A
3A
TION VOLTAGE (V)

TION VOLTAGE (V)

1A
1A
0.1 0.1 0.5 A 3A

0.5 A
IC = 0.1 A
IC = 0.1 A

TJ = 25°C TJ = 25°C
0.01 0.01
0.001 0.01 0.1 1 0.001 0.01 0.1 1
IB, BASE CURRENT (A) IB, BASE CURRENT (A)
Figure 7. Saturation Region Figure 8. Saturation Region

1 1
IC/IB = 10 IC/IB = 10
SATURATION VOLTAGE (V)

SATURATION VOLTAGE (V)

0.1 25°C 0.1

25°C

−30°C −30°C
125°C
125°C
0.01 0.01
0.01 0.1 1 10 100 0.01 0.1 1 10 100
IC, COLLECTER CURRENT (A) IC, COLLECTER CURRENT (A)
Figure 9. VCE(sat), Collector−Emitter Saturation Figure 10. VCE(sat), Collector−Emitter
Voltage Saturation Voltage

1.6 1.6
VCE = 5 V VCE = 5 V
1.4 1.4
BASE−EMITTER VOLTAGE (V)

BASE−EMITTER VOLTAGE (V)

1.2 1.2

1.0 1.0

0.8 −30°C 0.8 −30°C

0.6 0.6
25°C 25°C
0.4 0.4
125°C 125°C
0.2 0.2

0.0 0.0
0.01 0.1 1 10 100 0.01 0.1 1 10 100
IC, COLLECTER CURRENT (A) IC, COLLECTER CURRENT (A)
Figure 11. VBE(on), Base−Emitter Voltage Figure 12. VBE(on), Base−Emitter Voltage

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 NJW3281G (NPN) NJW1302G (PNP)

TYPICAL CHARACTERISTICS
PNP NJW1302G NPN NJW3281G
1200 1200
TJ = 25°C TJ = 25°C
Cob, OUTPUT CAPACITANCE (pF)

Cob, OUTPUT CAPACITANCE (pF)

fTest = 1 MHz fTest = 1 MHz
1000 1000

800 800

600 600

400 400

200 200

0 0
0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100
VCB, COLLECTER−BASE VOLTAGE (V) VCB, COLLECTER−BASE VOLTAGE (V)
Figure 13. Output Capacitance Figure 14. Output Capacitance

12000 10000
TJ = 25°C TJ = 25°C
fTest = 1 MHz fTest = 1 MHz
Cib, INPUT CAPACITANCE (pF)

Cib, INPUT CAPACITANCE (pF)

10000
8000

8000
6000
6000

4000
4000

2000 2000
0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10

VEB, EMITTER−BASE VOLTAGE (V) VEB, EMITTER−BASE VOLTAGE (V)

Figure 15. Input Capacitance Figure 16. Input Capacitance

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 NJW3281G (NPN) NJW1302G (PNP)

PNP NJW1302G NPN NJW3281G

100 100
IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

10 mSec 10 mSec
10 10
100 mSec 100 mSec
1 Sec 1 Sec

1.0 1.0

0.1 0.1
1.0 10 100 1000 1.0 10 100 1000
VCE, COLLECTOR EMITTER (VOLTS) VCE, COLLECTOR EMITTER (VOLTS)

Figure 17. Active Region Safe Operating Area Figure 18. Active Region Safe Operating Area

There are two limitations on the power handling ability of The data of Figures 17 and 18 is based on TJ(pk) = 150°C;
a transistor; average junction temperature and secondary TC is variable depending on conditions. At high case
breakdown. Safe operating area curves indicate IC − VCE temperatures, thermal limitations will reduce the power than
limits of the transistor that must be observed for reliable can be handled to values less than the limitations imposed by
operation; i.e., the transistor must not be subjected to greater second breakdown.
dissipation than the curves indicate.

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−3P−3LD
CASE 340AB−01
ISSUE A
DATE 30 OCT 2007

NOTES:
A SEATING
PLANE 1. DIMENSIONING AND TOLERANCING PER ASME
B B C Y14.5M, 1994.
Q U 2. CONTROLLING DIMENSION: MILLIMETERS
4 E 3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.
SCALE 1:1 4. DIMENSION A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
A L MILLIMETERS
DIM MIN NOM MAX
A 19.70 19.90 20.10
B 15.40 15.60 15.80
C 4.60 4.80 5.00
D 0.80 1.00 1.20
(3°) E 1.45 1.50 1.65
P K
F 1.80 2.00 2.20
G 5.45 BSC
H 1.20 1.40 1.60
J 0.55 0.60 0.75
1 2 3 K 19.80 20.00 20.20
L 18.50 18.70 18.90
3X D H F P 3.30 3.50 3.70
0.25 M A B S J W Q 3.10 3.20 3.50
U 5.00 REF
W 2.80 3.00 3.20
G G
GENERIC MARKING
DIAGRAM*
STYLE 1: STYLE 2: STYLE 3:
PIN 1. BASE PIN 1. ANODE PIN 1. GATE
2. COLLECTOR 2. CATHODE 2. DRAIN
3. EMITTER 3. ANODE 3. SOURCE
4. COLLECTOR 4. CATHODE 4. DRAIN xxxxxG
AYWW

xxxxx = Specific Device Code

G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON25095D Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−3P−3LD PAGE 1 OF 1

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