DATA SHEET

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Silicon Power Transistors 16 AMPERES

COMPLEMENTARY SILICON
MJW21193 (PNP) POWER TRANSISTORS
MJW21194 (NPN) 250 VOLTS, 200 WATTS
The MJW21193 and MJW21194 utilize Perforated Emitter
PNP NPN
technology and are specifically designed for high power audio output,
disk head positioners and linear applications. COLLECTOR 2, 4 COLLECTOR 2, 4

Features
 Total Harmonic Distortion Characterized 1 1
BASE BASE
 High DC Current Gain
 Excellent Gain Linearity EMITTER 3 EMITTER 3
 High SOA
 These Devices are Pb−Free and are RoHS Compliant
MARKING DIAGRAM

MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 250 Vdc MJW2119x
AYWWG
Collector−Base Voltage VCBO 400 Vdc
Emitter−Base Voltage VEBO 5.0 Vdc 1 2 3
1 3
Collector−Emitter Voltage − 1.5 V VCEX 400 Vdc TO−247 BASE EMITTER
CASE 340L
Collector Current − Continuous IC 16 Adc 2 COLLECTOR
STYLE 3
Collector Current − Peak (Note 1) ICM 30 Adc
x = 3 or 4
Base Current − Continuous IB 5.0 Adc A = Assembly Location
Y = Year
Total Power Dissipation @ TC = 25C PD 200 W
Derate Above 25C 1.43 W/C WW = Work Week
G = Pb−Free Package
Operating and Storage Junction TJ, Tstg − 65 to C
Temperature Range +150
Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected. Device Package Shipping
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle  10%.
MJW21193G TO−247 30 Units/Rail
(Pb−Free)
THERMAL CHARACTERISTICS
MJW21194G TO−247 30 Units/Rail
Characteristic Symbol Max Unit
(Pb−Free)
Thermal Resistance, RqJC 0.7 C/W
Junction−to−Case

Thermal Resistance, RqJA 40 C/W

Junction−to−Ambient

 Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

May, 2024 − Rev. 6 MJW21193/D
 MJW21193 (PNP) MJW21194 (NPN)

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage VCEO(sus) 250 − − Vdc
(IC = 100 mAdc, IB = 0)

Collector Cutoff Current ICEO − − 100 mAdc

(VCE = 200 Vdc, IB = 0)

Emitter Cutoff Current IEBO − − 100 mAdc

(VCE = 5 Vdc, IC = 0)

Collector Cutoff Current ICEX − − 100 mAdc

(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)

SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased IS/b Adc
(VCE = 50 Vdc, t = 1 s (non−repetitive) 4.0 − −
(VCE = 80 Vdc, t = 1 s (non−repetitive) 2.25 − −
ON CHARACTERISTICS
DC Current Gain hFE
(IC = 8 Adc, VCE = 5 Vdc) 20 − 80
(IC = 16 Adc, IB = 5 Adc) 8 − −
Base−Emitter On Voltage VBE(on) − − 2.2 Vdc
(IC = 8 Adc, VCE = 5 Vdc)

Collector−Emitter Saturation Voltage VCE(sat) Vdc

(IC = 8 Adc, IB = 0.8 Adc) − − 1.4
(IC = 16 Adc, IB = 3.2 Adc) − − 4
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output THD %
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS hFE
unmatched − 0.8 −
(Matched pair hFE = 50 @ 5 A/5 V) hFE
matched − 0.08 −
Current Gain Bandwidth Product fT 4 − − MHz
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)

Output Capacitance Cob − − 500 pF

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

PNP MJW21193 NPN MJW21194

T CURRENT GAIN BANDWIDTH PRODUCT (MHz)

T CURRENT GAIN BANDWIDTH PRODUCT (MHz)

6.5 8.0
VCE = 10 V
6.0 7.0
10 V
5.5 6.0
5V
5.0
5.0 VCE = 5 V
4.0
4.5
3.0
4.0 2.0
3.5 TJ = 25C TJ = 25C
1.0
ftest = 1 MHz ftest = 1 MHz
3.0 0
f,

f,

0.1 1.0 10 0.1 1.0 10

IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain Figure 2. Typical Current Gain

Bandwidth Product Bandwidth Product

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 MJW21193 (PNP) MJW21194 (NPN)

TYPICAL CHARACTERISTICS

PNP MJW21193 NPN MJW21194

1000 1000

TJ = 100C
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

TJ = 100C

25C 25C
100 100
-25C
-25C

VCE = 20 V VCE = 20 V

10 10
0.1 1.0 10 100 0.1 1.0 10 100
IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V

PNP MJW21193 NPN MJW21194

1000 1000
hFE , DC CURRENT GAIN

TJ = 100C
hFE , DC CURRENT GAIN

TJ = 100C

25C 25C
100 100
-25C -25C

VCE = 5 V VCE = 20 V

10 10
0.1 1.0 10 100 0.1 1.0 10 100
IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS)

Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V

PNP MJW21193 NPN MJW21194

30 35

1.5 A IB = 2 A
IB = 2 A 30
25
I C, COLLECTOR CURRENT (A)

I C, COLLECTOR CURRENT (A)

1.5 A
25
20 1A 1A
20
15
0.5 A 15 0.5 A
10
10

5.0 5.0
TJ = 25C TJ = 25C
0 0
0 5.0 10 15 20 25 0 5.0 10 15 20 25
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. Typical Output Characteristics Figure 8. Typical Output Characteristics

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 MJW21193 (PNP) MJW21194 (NPN)

TYPICAL CHARACTERISTICS (continued)

PNP MJW21193 NPN MJW21194

3.0 1.4

1.2 TJ = 25C
TJ = 25C
SATURATION VOLTAGE (VOLTS)

SATURATION VOLTAGE (VOLTS)

2.5 IC/IB = 10
IC/IB = 10
1.0
2.0
0.8 VBE(sat)

1.5 0.6

1.0 VBE(sat) 0.4

0.5 0.2
VCE(sat) VCE(sat)
0 0
0.1 1.0 10 100 0.1 1.0 10 100
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages

PNP MJW21193 NPN MJW21194

10 10
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)

VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)

TJ = 25C TJ = 25C

VCE = 20 V (SOLID)
1.0 1.0 VCE = 5 V (DASHED)
VCE = 20 V (SOLID) VCE = 5 V (DASHED)

0.1 0.1
0.1 1.0 10 100 0.1 1.0 10 100
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 11. Typical Base−Emitter Voltage Figure 12. Typical Base−Emitter Voltage

PNP MJW21193 NPN MJW21194

100 100
IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

10 mSec 10 mSec
100 mSec 100 mSec
10 10

1 Sec 1 Sec

1.0 1.0

0.1 0.1
1.0 10 100 1000 1.0 10 100
VCE, COLLECTOR EMITTER (VOLTS) VCE, COLLECTOR EMITTER (VOLTS) 1000

Figure 13. Active Region Safe Operating Area Figure 14. Active Region Safe Operating Area

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 MJW21193 (PNP) MJW21194 (NPN)

There are two limitations on the power handling ability of The data of Figure 13 is based on TJ(pk) = 150C; TC is
a transistor; average junction temperature and secondary variable depending on conditions. At high case
breakdown. Safe operating area curves indicate IC − VCE temperatures, thermal limitations will reduce the power than
limits of the transistor that must be observed for reliable can be handled to values less than the limitations imposed by
operation; i.e., the transistor must not be subjected to greater second breakdown.
dissipation than the curves indicate.

10000 10000
TC = 25C
Cib TC = 25C
Cib
C, CAPACITANCE (pF)

C, CAPACITANCE (pF)
1000 1000
Cob

f(test) = 1 MHz) Cob

f(test) = 1 MHz)
100 100
0.1 1.0 10 100 0.1 1.0 10 100
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 15. MJW21193 Typical Capacitance Figure 16. MJW21194 Typical Capacitance

1.2

1.1
T , TOTAL HARMONIC
DISTORTION (%)

1.0

0.9

0.8
HD

0.7

0.6
10 100 1000 10000 100000
FREQUENCY (Hz)

Figure 17. Typical Total Harmonic Distortion

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 MJW21193 (PNP) MJW21194 (NPN)

+50 V
AUDIO PRECISION
MODEL ONE PLUS SOURCE 50 W
TOTAL HARMONIC AMPLIFIER DUT
DISTORTION
ANALYZER
0.5 W

0.5 W 8.0 W

DUT

-50 V

Figure 18. Total Harmonic Distortion Test Circuit

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 MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−247
CASE 340L
ISSUE G
DATE 06 OCT 2021

SCALE 1:1

GENERIC
MARKING DIAGRAM*

XXXXXXXXX
AYWWG

STYLE 1: STYLE 2: STYLE 3: STYLE 4: XXXXX = Specific Device Code

PIN 1. GATE PIN 1. ANODE PIN 1. BASE PIN 1. GATE A = Assembly Location
2. DRAIN 2. CATHODE (S) 2. COLLECTOR 2. COLLECTOR
3. SOURCE 3. ANODE 2 3. EMITTER 3. EMITTER Y = Year
4. DRAIN 4. CATHODES (S) 4. COLLECTOR 4. COLLECTOR WW = Work Week
STYLE 5: STYLE 6:
G = Pb−Free Package
PIN 1. CATHODE PIN 1. MAIN TERMINAL 1
2. ANODE 2. MAIN TERMINAL 2 *This information is generic. Please refer to
3. GATE 3. GATE device data sheet for actual part marking.
4. ANODE 4. MAIN TERMINAL 2 Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB15080C Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−247 PAGE 1 OF 1

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