NJL4281D (NPN)

NJL4302D (PNP)

Complementary
ThermalTrakt Transistors
The ThermalTrak family of devices has been designed to eliminate
thermal equilibrium lag time and bias trimming in audio amplifier http://onsemi.com
applications. They can also be used in other applications as transistor
die protection devices. BIPOLAR POWER
Features TRANSISTORS
• Thermally Matched Bias Diode 15 AMP, 350 VOLT, 230 WATT
• Instant Thermal Bias Tracking
• Absolute Thermal Integrity
• High Safe Operating Area TO−264, 5 LEAD
• Pb−Free Packages are Available* CASE 340AA
STYLE 1
Benefits
• Eliminates Thermal Equilibrium Lag Time and Bias Trimming
• Superior Sound Quality Through Improved Dynamic Temperature
Response MARKING DIAGRAM SCHEMATIC
• Significantly Improved Bias Stability
• Simplified Assembly
♦ Reduced Labor Costs NJLxxxxDG
♦ Reduced Component Count AYYWW
Thermal Trak
• High Reliability

Applications
• High−End Consumer Audio Products
♦ Home Amplifiers
♦ Home Receivers
• Professional Audio Amplifiers
NJLxxxxD = Device Code
♦ Theater and Stadium Sound Systems
xxxx = 4281 or 4302
♦ Public Address Systems (PAs) G = Pb−Free Package
A = Assembly Location
YY = Year
WW = Work Week

ORDERING INFORMATION

Device Package Shipping

NJL4281D TO−264 25 Units / Rail
NJL4281DG TO−264 25 Units / Rail
(Pb−Free)
NJL4302D TO−264 25 Units / Rail
NJL4302DG TO−264 25 Units / Rail
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

June, 2006 − Rev. 2 NJL4281D/D
 NJL4281D (NPN) NJL4302D (PNP)

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 350 Vdc
Collector−Base Voltage VCBO 350 Vdc
Emitter−Base Voltage VEBO 5 Vdc
Collector−Emitter Voltage − 1.5 V VCEX 350 Vdc
Collector Current − Continuous IC 15 Adc
− Peak (Note 1) 30
Base Current − Continuous IB 1.5 Adc
Total Power Dissipation @ TC = 25°C PD 230 W
Derate Above 25°C 1.84 W/°C
Operating and Storage Junction Temperature Range TJ, Tstg − 65 to +150 °C
DC Blocking Voltage VR 200 V
Average Rectified Forward Current IF(AV) 1.0 A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 0.54 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

ATTRIBUTES
Characteristic Value
ESD Protection Human Body Model >8000 V
Machine Model > 400 V

Flammability Rating UL 94 V−0 @ 0.125 in

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 NJL4281D (NPN) NJL4302D (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage VCE(sus) 350 − Vdc
(IC = 50 mA, IB = 0)

Collector Cut−off Current ICEO − 100 mAdc

(VCE = 200 V, IB = 0)

Collector Cutoff Current ICBO mAdc

(VCB = 350 Vdc, IE = 0) − 50

Emitter Cutoff Current IEBO mAdc

(VEB = 5.0 Vdc, IC = 0) − 5.0

SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased IS/b Adc
(VCE = 50 Vdc, t = 1.0 s (non−repetitive) 4.5 −
(VCE = 100 Vdc, t = 1.0 s (non−repetitive) 1.0 −
ON CHARACTERISTICS
DC Current Gain hFE −
(IC = 100 mAdc, VCE = 5.0 Vdc) 80 250
(IC = 1.0 Adc, VCE = 5.0 Vdc) 80 250
(IC = 3.0 Adc, VCE = 5.0 Vdc) 80 250
(IC = 5.0 Adc, VCE = 5.0 Vdc) 80 250
(IC = 8.0 Adc, VCE = 5.0 Vdc) 40 −
(IC = 15 Adc, VCE = 5.0 Vdc) 10 −
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 8.0 Adc, IB = 0.8 Adc) − 1.0

Emitter−Base Saturation Voltage VBE(sat) Vdc

(IC = 8.0 Adc, IB = 0.8 A) − 1.4

Base−Emitter ON Voltage VBE(on) Vdc

(IC = 8.0 Adc, VCE = 5.0 Vdc) − 1.5

DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz
(IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) 35 −

Output Capacitance Cob pF

(VCB = 10 Vdc, IE = 0, ftest = 1.0 MHz) − 600
Maximum Instantaneous Forward Voltage (Note 2) vF V
(iF = 1.0 A, TJ = 25°C) 1.1
(iF = 1.0 A, TJ = 150°C) 0.93
Maximum Instantaneous Reverse Current (Note 2) iR mA
(Rated dc Voltage, TJ = 25°C) 10
(Rated dc Voltage, TJ = 150°C) 100
Maximum Reverse Recovery Time trr 100 ns
(iF = 1.0 A, di/dt = 50 A/ms)
2. Diode Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

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 NJL4281D (NPN) NJL4302D (PNP)

TYPICAL CHARACTERISTICS
1000 1000
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

TJ = 100°C
TJ = 100°C

TJ = 25°C
100 100 TJ = 25°C

10 10
0.01 0.1 1 10 100 0.01 0.1 1 10 100

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 1. DC Current Gain, VCE = 5 V, Figure 2. DC Current Gain, VCE = 5 V,
NPN NJL4281D PNP NJL4302D

1000 1000
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

TJ = 100°C
TJ = 100°C
TJ = 25°C
100 100 TJ = 25°C

10 10
0.01 0.1 1 10 100 0.01 0.1 1 10 100

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 3. DC Current Gain, VCE = 20 V, Figure 4. DC Current Gain, VCE = 20 V,
NPN NJL4281D PNP NJL4302D

1.4 2.0
1.8
SATURATION VOLTAGE (V)

1.2
SATURATION VOLTAGE (V)

1.6
1 1.4

0.8 1.2
Vbe(sat)
1.0
0.6 Vbe(sat)
0.8
0.4 0.6
0.4
0.2 Vce(sat) Vce(sat) TJ = 25°C
TJ = 25°C
0.2 Ic/Ib = 10
Ic/Ib = 10
0 0.0
0.01 0.1 1 10 100 0.01 0.1 1 10 100
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 5. Typical Saturation Voltage, Figure 6. Typical Saturation Voltage,
NPN NJL4281D PNP NJL4302D

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 NJL4281D (NPN) NJL4302D (PNP)

TYPICAL CHARACTERISTICS
1.4 2.5
VBE(on), BASE−EMITTER VOLTAGE

VBE(on), BASE−EMITTER VOLTAGE

1.2
2.0
1.0

1.5
0.8
(V)

(V)
0.6
1.0

0.4
0.5
0.2

0.0 0.0
0.01 0.1 1 10 100 0.01 0.1 1 10 100
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 7. Typical Base−Emitter Voltages, Figure 8. Typical Base−Emitter Voltages,
NPN NJL4281D PNP NJL4302D
fT, CURRENT BANDWIDTH PRODUCT (MHz)

fT, CURRENT BANDWIDTH PRODUCT (MHz)

70 70

60 VCE = 5 V 60
VCE = 5 V
50 50
VCE = 10 V
40 40
VCE = 10 V
30 30

20 20

10 TJ = 25°C 10 TJ = 25°C
ftest = 1 MHz ftest = 1 MHz
0 0
0.1 1 10 0.1 1 10
IC, COLLECTOR CURRENT (A)
Figure 9. Typical Current Gain Bandwidth Product, Figure 10. Typical Current Gain Bandwidth Product,
NPN NJL4281D PNP NJL4302D

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 NJL4281D (NPN) NJL4302D (PNP)

1E−05
IR, REVERSE CURRENT (mA)
10

1E−06

IF, FORWARD CURRENT (A)

TJ = 100°C 1
1E−07

1E−08 0.1

TJ = 25°C
1E−09
100°C 25°C −25°C
0.01
1E−10 TJ = −25°C

1E−11 0.001
0 50 100 150 200 250 300 350 400 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
VR, REVERSE VOLTAGE (VOLTS) VF, VOLTAGE (VOLTS)
Figure 11. Typical Diode Reverse Current Figure 12. Typical Diode Forward Voltage

100 100
10 mS 10 mS
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

10 10
1 Sec 1 Sec

1 100 mS 1 100 mS

0.1 0.1

TJ = 25°C TJ = 25°C
0.01 0.01
1 10 100 1000 1 10 100 1000
Vce, COLLECTOR−EMITTER VOLTAGE (V) Vce, COLLECTOR−EMITTER VOLTAGE (V)

Figure 13. Active Region Safe Operating Area, Figure 14. Active Region Safe Operating Area,
NPN NJL4281D PNP NJL4302D

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 NJL4281D (NPN) NJL4302D (PNP)

PACKAGE DIMENSIONS

TO−264, 5 LEAD
CASE 340AA−01
ISSUE O

NOTES:
−T− 1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
Q C
−B− 2. CONTROLLING DIMENSION: MILLIMETER.
Y 0.25 (0.010) M T B M
E MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
U A 25.857 25.984 26.111 1.018 1.023 1.028
N B 19.761 19.888 20.015 0.778 0.783 0.788
C 4.928 5.055 5.182 0.194 0.199 0.204
D 1.219 BSC 0.0480 BSC
A E 2.032 2.108 2.184 0.0800 0.0830 0.0860
F 1.981 BSC 0.0780 BSC
G 3.81 BSC 0.150 BSC
R L W S
H 2.667 2.718 2.769 0.1050 0.1070 0.1090
1 2 3 4 5 J 0.584 BSC 0.0230 BSC
K 20.422 20.549 20.676 0.804 0.809 0.814
L 11.28 REF 0.444 REF
M 0 _ −−− 7_ 0_ −−− 7_
P N 4.57 REF 0.180 REF
K P 2.259 2.386 2.513 0.0889 0.0939 0.0989
Q 3.480 BSC 0.1370 BSC
R 2.54 REF 0.100 REF
S 0 _ −−− 8_ 0_ −−− 8_
U 6.17 REF 0.243 REF
M W 0 _ −−− 6_ 0_ −−− 6_
G J Y 2.388 BSC 0.0940 BSC
H
D 5 PL STYLE 1:
F 5 PL 0.25 (0.010) M T B S PIN 1. BASE
2. EMITTER
3. COLLECTOR
4. ANODE
W 5. CATHODE

ThermalTrak is a trademark of Semiconductor Components Industries, LLC (SCILLC).

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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