20 STERN AVE.
TELEPHONE: (973) 376-2922
SPRINQRELD, NEW JERSEY 07081 (212)227-6006
FAX- (973) 376-8960
U.SA
2N6769/2N6770
N-Channel Power MOSFETs,
12 A, 450 V/500 V
Description TO-204AA
These devices are n-ohannel, enhancement mode, power
MQSFETs designed especially for high voltage, high speed
applications, such as off-line switching power supplies,
UPS, AC and DC motor controls, relay and solenoid
drivers.
• VGS Rated at ±20 V
• Silicon Gate for Fast Switching Speeds
• IDSSI vos(on), SOA and Va3(Ul) Specified at Elevated
Temperature 2N6769
2N6770
• Rugged
Maximum Ratings
Rating Rating
Symbol Characteristic 2N6770 2N6769 Unit
VDSS Drain to Source Voltage 500 450 V
VDGR Drain to Gate Voltage 500 450 V
Ros-1.0 Mil
VQS Gate to Source Voltage ±20 ±20 V
Tj, T,|B Operating Junction and -55 to +150 -55 to +1SO «c
Storage Temperatures
TL Maximum Lead Temperature 300 300 °c
for Soldering Purposes,
1/16" From Case for 10 s
Maximum On-State Characteristics
RDS(on) Static Drain-to-Source 0.4 0.5 ft
On Resistance
ID Drain Current A
Continuous at Tc - 25°C 12 11
Continuous at Tc =» 100'C 4.75 7.0
IDM Pulsed 252 202
Maximum Thermal Characteristics
R0JC Thermal Resistance, 0.83 0.83 °C/W
Junction to Case
PD Total Power Dissipation W
at TO - 25°C 150 150
at TC-100*C 60 60
Linear Derating Factor 1.2 1.2 W/"C
N'J Semi-Conductors reserves the right to change test conditions, parameter limits nnd package dimensions without notice.
Information furnished by N.I Semi-ConJuctors is believed to be both accurate and reliable at the time of going to press. Hoviever NJ
Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages
customers to verifv that datasheets are current before placing orders.
2N6769/2N6770
Electrical Characteristics (Tc = 25°C unless otherwise noted)
Symbol Characteristic Mln Max Unit 1 Test Conditions
Off Characteristics
V(BR)DSS Drain Source Breakdown Voltage1 V VGS - o V, b - 4 mA
2N6770 5002
2M6769 4502
loss Zero Gate Voltage Drain Current 1 ItlA VDs = Rated VDSS. Ves - 0 V
4 V0s " Rated VDSS.
VQS-O V, T C =125'C
IGSS Gate-Body Leakage Current ±100 nA VGS -±20 V, Vos-0 V
On Characteristics
VGS(I!>) Gate Threshold Voltage 2.0 4.0 V ID-1 mA, VOS-VQS
RDS(on) Static Drain-Source On-Resistance' il VQS - 1 0 V
2N6770 0.4 ID = 7.75 A
2N6769 0.5 ID - 7.0 A
2N6770 0.88 ID -7.75 A, Tc-126'C
2N6769 1.10 ID -7.0 A, TC=125°C
Vos(on) Drain-Source On-Voltage' V VQS -10 V
2N6770 6.0 ID -12 A
2N6769 6,0 ID = 11 A
9fs Forward Transconductance 8.0 24 s (u> VDS -15 V, ID -7.75 A
Dynamic Characteristics
Cjse Input Capacitance 1000 3000 PF V DS -25 V. VQS = 0 V
f-1.0 MHz
Cdss Output Capacitance 200 eoo PF
C,8S Reverse Transfer Capacitance 50 200 PF
Switching Characteristics (Tc - 25°C. Figures 9, 10)
ld(tm) Turn-On Delay Time 35 ns Vrjo = 210 V, I0 = 7.75 A
VQS -10V, R0EN-4.7 n
tr Rise Time 60 ns
R QS = 4.7 J2
*d(offl Turn-Off Delay Time 150 ns
tf Fall Time 70 ns
Q8 Total Gate Charge 120* nC VQS =10 V, ID =16 A
VDD - 400 V
Electrical Characteristics (Cont.) (Tc = 25°C unless otherwise noted)
Symbol Characteristic Win Typ Max Unit Test Conditions
Source-Drain Dlade Characteristics
is Continuous Source Current A
2N6770 122
2N6769
(SM Pulsed Source Current A
2N6770 25J
2N6769 202
VSD Diode Forward Voltage V VGS-O V
2N6770 0.80 1.6 Is -12 A
2N6769 0.75 1,5 Is -11 A
Reverse Recovery Time 1300s ns VQS-O V, Tj-150°C
•" IF -ISM, d!F/dt--100 A//JS
QHR Reverse Recovery Charge 7.4s nC VQS-O V, Tj = 150'C
IF = ISM. dlp/dt- 100 A/JUS
