2N6426, 2N6427

2N6426 is a Preferred Device

Darlington Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
http://onsemi.com

COLLECTOR 3
MAXIMUM RATINGS
BASE
Rating Symbol Value Unit
2
Collector − Emitter Voltage VCEO 40 Vdc
Collector − Base Voltage VCBO 40 Vdc
EMITTER 1
Emitter − Base Voltage VEBO 12 Vdc
Collector Current − Continuous IC 500 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
TO−92
Total Device Dissipation @ TC = 25°C PD 1.5 W
Derate above 25°C 12 mW/°C CASE 29
STYLE 1
Operating and Storage Junction TJ, Tstg −55 to +150 °C
Temperature Range 1
12 2
THERMAL CHARACTERISTICS 3 3
STRAIGHT LEAD BENT LEAD
Characteristic Symbol Max Unit BULK PACK TAPE & REEL
AMMO PACK
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum MARKING DIAGRAM
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

2N
642x
AYWW G
G

x = 6 or 7
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

Preferred devices are recommended choices for future use

*For additional information on our Pb−Free strategy and soldering details, please and best overall value.
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007 1 Publication Order Number:

March, 2007 − Rev. 3 2N6426/D
 2N6426, 2N6427

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage, (Note 1) V(BR)CEO 40 − − Vdc
(IC = 10 mAdc, VBE = 0)

Collector −Base Breakdown Voltage V(BR)CBO 40 − − Vdc

(IC = 100 mAdc, IE = 0)
Emitter −Base Breakdown Voltage V(BR)EBO 12 − − Vdc
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current ICES − − 1.0 mAdc
(VCE = 25 Vdc, IB = 0)

Collector Cutoff Current ICBO − − 50 nAdc

(VCB= 30 Vdc, IE = 0)

Emitter Cutoff Current IEBO − − 50 nAdc

(VEB= 10 Vdc, IC = 0)

ON CHARACTERISTICS
DC Current Gain, (Note 1) hFE −
(IC = 10 mAdc, VCE = 5.0 Vdc) 2N6426 20,000 − 200,000
2N6427 10,000 − 100,000

(IC = 100 mAdc, VCE = 5.0 Vdc) 2N6426 30,000 − 300,000

2N6427 20,000 − 200,000

(IC = 500 mAdc, VCE = 5.0 Vdc) 2N6426 20,000 − 200,000

2N6427 14,000 − 140,000
Collector −Emitter Saturation Voltage VCE(sat) Vdc
(IC = 50 mAdc, IB = 0.5 mAdc) − 0.71 1.2
(IC = 500 mAdc, IB = 0.5 mAdc − 0.9 1.5
Base −Emitter Saturation Voltage VBE(sat) − 1.52 2.0 Vdc
(IC = 500 mAdc, IB = 0.5 mAdc)

Base −Emitter On Voltage VBE(on) − 1.24 1.75 Vdc

(IC = 50 mAdc, VCE = 5.0 Vdc)

SMALL−SIGNAL CHARACTERISTICS
Output Capacitance Cobo − 5.4 7.0 pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance Cibo − 10 15 pF

(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz)

Input Impedance hie kW

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N6426 100 − 2000
2N6427 50 − 1000
Small−Signal Current Gain hfe −
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N6426 20,000 − −
2N6427 10,000 − −
Current −Gain − High Frequency |hfe| −
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2N6426 1.5 2.4 −
2N6427 1.3 2.4 −
Output Admittance hoe − − 1000 mmhos
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

Noise Figure NF − 3.0 10 dB

(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz)
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

http://onsemi.com
2
 2N6426, 2N6427

RS
in

en
IDEAL
TRANSISTOR

Figure 1. Transistor Noise Model

NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)

500 2.0
BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
RS ≈ 0 1.0
200
0.7
en, NOISE VOLTAGE (nV)

i n, NOISE CURRENT (pA)

0.5
100 IC = 1.0 mA
10 mA 0.3
50 0.2

100 mA 100 mA
0.1
20
0.07
IC = 1.0 mA 10 mA
0.05
10
0.03
5.0 0.02
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
f, FREQUENCY (Hz) f, FREQUENCY (Hz)

Figure 2. Noise Voltage Figure 3. Noise Current

200 14
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)

BANDWIDTH = 10 Hz TO 15.7 kHz

12
BANDWIDTH = 10 Hz TO 15.7 kHz
100
NF, NOISE FIGURE (dB)

10
70 IC = 10 mA 10 mA
8.0
50
100 mA
6.0
30 100 mA
4.0 IC = 1.0 mA
20
1.0 mA
2.0

10 0
1.0 2.0 5.0 10 20 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 1000
RS, SOURCE RESISTANCE (kW) RS, SOURCE RESISTANCE (kW)

Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure

http://onsemi.com
3
 2N6426, 2N6427

SMALL−SIGNALCHARACTERISTICS

20 4.0
VCE = 5.0 V

|h fe |, SMALL−SIGNAL CURRENT GAIN

TJ = 25°C f = 100 MHz
10 2.0 TJ = 25°C
C, CAPACITANCE (pF)

7.0 Cibo
1.0
5.0 Cobo 0.8
0.6

3.0 0.4

2.0 0.2
0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0.5 1.0 2.0 0.5 10 20 50 100 200 500
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 6. Capacitance Figure 7. High Frequency Current Gain

VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

200k 3.0
TJ = 125°C TJ = 25°C
100k
2.5
70k IC = 10 mA 50 mA 250 mA 500 mA
hFE, DC CURRENT GAIN

50k 25°C

30k 2.0
20k
1.5
10k
7.0k
−55 °C
5.0k 1.0
VCE = 5.0 V
3.0k
2.0k 0.5
5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

1.6 −1.0
RθV, TEMPERATURE COEFFICIENTS (mV/°C)

*APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C

TJ = 25°C
1.4 −2.0 *RqVC FOR VCE(sat)
V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 1000 −55 °C TO 25°C

1.2 −3.0
VBE(on) @ VCE = 5.0 V 25°C TO 125°C
1.0 −4.0
qVB FOR VBE
0.8 −5.0 −55 °C TO 25°C
VCE(sat) @ IC/IB = 1000

0.6 −6.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 10. “On” Voltages Figure 11. Temperature Coefficients

http://onsemi.com
4
 2N6426, 2N6427

1.0
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED)

0.2
0.3
0.2 SINGLE PULSE
0.05
0.1
0.1
0.07 SINGLE PULSE
0.05
0.03 ZqJC(t) = r(t) • RqJCTJ(pk) − TC = P(pk) ZqJC(t)
0.02 ZqJA(t) = r(t) • RqJATJ(pk) − TA = P(pk) ZqJA(t)

0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
t, TIME (ms)

Figure 12. Thermal Response

1.0k
FIGURE A
700 1.0 ms
500
IC, COLLECTOR CURRENT (mA)

tP
300 TC = 25°C 100 ms
TA = 25°C PP PP
200 1.0 s

100
70
50
t1
30
CURRENT LIMIT
20 THERMAL LIMIT 1/f
SECOND BREAKDOWN LIMIT t
10 DUTYCYCLE + t1f + 1
0.4 0.6 1.0 2.0 4.0 6.0 10 20 40 tP
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) PEAK PULSE POWER = PP

Figure 13. Active Region Safe Operating Area Design Note: Use of Transient
Thermal Resistance Data

ORDERING INFORMATION
Device Package Shipping†
2N6426G TO−92 5,000 Units / Bulk
(Pb−Free)

2N6426RLRAG TO−92 2,000 / Tape & Ammo

(Pb−Free)

2N6427G TO−92 5,000 Units / Bulk

(Pb−Free)

2N6427RLRAG TO−92 2,000 / Tape & Ammo

(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

http://onsemi.com
5
 2N6426, 2N6427

PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
ISSUE AM

NOTES:
A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
BULK PACK 2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
D G 0.045 0.055 1.15 1.39
X X
H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
V C N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
SECTION X−X R 0.115 −−− 2.93 −−−
1 N V 0.135 −−− 3.43 −−−

NOTES:
A B BENT LEAD 1. DIMENSIONING AND TOLERANCING PER
R
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
AMMO PACK 3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
P AND BEYOND DIMENSION K MINIMUM.
T
SEATING MILLIMETERS
PLANE K
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D D 0.40 0.54
X X G 2.40 2.80
G J 0.39 0.50
J K 12.70 −−−
N 2.04 2.66
V P 1.50 4.00
C
R 2.93 −−−
SECTION X−X V 3.43 −−−
1 N STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative

http://onsemi.com 2N6426/D
6