DATA SHEET

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Silicon Carbide (SiC)

Schottky Diode – EliteSiC, 1. Cathode 2. Anode
50 A, 1200 V, D3, TO-247-2L Schottky Diode

NDSH50120C
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher 1
reliability compared to Silicon. No reverse recovery current, 2
temperature independent switching characteristics, and excellent TO−247−2LD
thermal performance sets Silicon Carbide as the next generation of CASE 340DA
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost. MARKING DIAGRAM
Features
 Max Junction Temperature 175C
 Avalanche Rated 380 mJ
 High Surge Current Capacity
DSH
 Positive Temperature Coefficient 50120C
 Ease of Paralleling AYWWZZ
 No Reverse Recovery / No Forward Recovery
 These Devices are Halogen Free/BFR Free and are RoHS Compliant

Applications
DSH50120C = Specific Device Code
 General Purpose A = Assembly Plant Code
 SMPS, Solar Inverter, UPS YWW = Date Code (Year & Week)
 Power Switching Circuits ZZ = Lot Code

ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.

 Semiconductor Components Industries, LLC, 2021 1 Publication Order Number:

January, 2023 − Rev. 2 NDSH50120C/D
 NDSH50120C

ABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Symbol Parameter Value Unit
VRRM Peak Repetitive Reverse Voltage 1200 V
EAS Single Pulse Avalanche Energy (Note 1) 380 mJ
IF Continuous Rectified Forward Current @ TC < 139C 50 A
Continuous Rectified Forward Current @ TC < 135C 53
IF, Max Non-Repetitive Peak Forward Surge Current TC = 25C, 10 ms 1568 A
TC = 150C, 10 ms 1414 A
IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 231 A
IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 84 A
Ptot Power Dissipation TC = 25C 375 W
TC = 150C 62.5 W
TJ, TSTG Operating and Storage Temperature Range −55 to +175 C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. EAS of 380 mJ is based on starting TJ = 25C, L = 0.5 mH, IAS = 39 A, V = 50 V.

THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
RqJC Thermal Resistance, Junction to Case, Max 0.4 C/W
RqJA Thermal Resistance, Junction to Ambient, Max 40 C/W

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)

Symbol Parameter Test Condition Min Typ Max Unit
VF Forward Voltage IF = 50 A, TJ = 25C − 1.4 1.75 V
IF = 50 A, TJ = 125C − 1.63 −
IF = 50 A, TJ = 175C − 1.84 −
IR Reverse Current VR = 1200 V, TJ = 25C − 12.2 200 mA
VR = 1200 V, TJ = 125C − 30 200
VR = 1200 V, TJ = 175C − 61.5 200
QC Total Capacitive Charge V = 800 V − 246 − nC
C Total Capacitance VR = 1 V, f = 100 kHz − 3691 − pF
VR = 400 V, f = 100 kHz − 198 −
VR = 800 V, f = 100 kHz − 143 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

ORDERING INFORMATION
Part Number Top Marking Package Shipping
NDSH50120C DSH50120C TO−247−2LD 30 Units / Tube
(Pb-Free / Halogen Free)

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 NDSH50120C

TYPICAL CHARACTERISTICS (TJ = 25C UNLESS OTHERWISE NOTED)

100 1E−04
TJ = −55C TJ = 75C
TJ = 175C
TJ = 25C TJ = 125C
IF, FORWARD CURRENT (A)

IR, REVERSE CURRENT (A)

80 TJ = 125C
TJ = 175C 1E−05

TJ = 75C
60
1E−06
40
TJ = 25C
1E−07
20
TJ = −55C

0 1E−08
0 1 2 3 4 0 200 400 600 800 1000 1200
VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics

480 400
D = 0.1
IF, PEAK FORWARD CURRENT (A)

420 PTOT, POWER DISSIPATION (W)

360 300

300 D = 0.2
D = 0.7
240 D = 0.3 200

180 D = 0.5

120 100
D = 1.0
60
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (C) TC, CASE TEMPERATURE (C)
Figure 3. Current Derating Figure 4. Power Derating

250 10K
QC, CAPACITIVE CHARGE (nC)

200
CAPACITANCE (pF)

150
1K
100

50

0 100
0 100 200 300 400 500 600 700 800 0.1 1 10 100 800
VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 5. Capacitive Charge vs. Reverse Figure 6. Capacitive vs. Reverse Voltage
Voltage

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 NDSH50120C

TYPICAL CHARACTERISTICS (TJ = 25C UNLESS OTHERWISE NOTED)

70
EC, CAPACITIVE ENERGY (mJ)

60

50

40

30

20

10

0
0 100 200 300 400 500 600 700 800
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance Stored Energy

1
THERMAL RESISTANCE (C/W)
ZqJC, EFFECTIVE TRANSIENT

Duty Cycle = 0.5

0.2
0.1
0.1
0.05 P DM
Notes:
0.02 RqJC = 0.4C/W
0.01
t1 Peak TJ = PDM x ZqJC(t) + TC
Single Pulse t2 Duty Cycle, D = t1/t2
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t, PULSE TIME (s)
Figure 8. Junction−to−Case Transient Thermal Response Curve

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−247−2LD
CASE 340DA
ISSUE A
DATE 27 FEB 2019

GENERIC
MARKING DIAGRAM*

AYWWZZ XXXXX = Specific Device Code

XXXXXXX A = Assembly Location
XXXXXXX Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to de-
vice data sheet for actual part marking. Pb−
Free indicator, “G” or microdot “ G”, may or
may not be present. Some products may not
follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON00714H Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−247−2LD PAGE 1 OF 1

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