Ultrafast Rectifiers,

Surface Mount,
6 A, 200 V - 600 V

FES6, NRVFES6 Series

Features
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• Very Low Profile: Typical Height of 1.1 mm
• Ultrafast Recovery Time
• Low Forward Voltage Drop 3
• Low Thermal Resistance
• Very Stable Operation at Industrial Temperature, 150°C
• RoHS Compliant 2
• Green Molding Compound as per IEC61249 Standard 1
• Lead Free in Compliance with EU RoHS 2011/65/EU Directive TO−277−3LD
• With DAP Option Only
CASE 340BQ

• NRV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101
Anode 1
Qualified and PPAP Capable 3
Cathode
Anode 2
MAXIMUM RATINGS
Parameter Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM V MARKING DIAGRAM
FES6D 200
FES6G 400
FES6J 600 $Y&Z&3
*
Average Forward Rectified Current IF(AV) 6 A
Peak Forward Surge Current: 8.3 ms IFSM 80 A
Single Half Sine−Wave Superimposed $Y = ON Semiconductor Logo
on Rated Load &Z = Assembly Plant Code
Operating Junction Temperature Range TJ −55 to °C &3 = Date Code (Year & Week)
+175 * = Specific Device Code
FES6D, FES6G, FES6J
Storage Temperature Range TSTG −55 to °C
+175
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION
Part Number Top Mark Package Shipping†
FES6D
FES6D
NRVFES6D*
FES6G
FES6G TO−277 3L (with DAP Option only) 5000 / Tape & Reel
NRVFES6G*
FES6J
FES6J
NRVFES6J*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.

© Semiconductor Components Industries, LLC, 2020 1 Publication Order Number:

April, 2020 − Rev. 4 FES6D/D
 FES6, NRVFES6 Series

THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) (Note 1)

Parameter Symbol Value Unit
Thermal Characteristics, Junction−to−Lead, Thermocouple Soldered to Cathode YJL 6 °C/W
Thermal Resistance, Junction−to−Ambient RqJA 100 °C/W
1. Per JESD51−3 Recommended Thermal Test Board.

ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted)

Value

Symbol Parameter Conditions FES6D FES6G FES6J Unit

VF Maximum Instantaneous Forward IF = 6 A 1.05 1.20 2.2 V
Voltage (Note 2)
IF = 6 A, TJ = 125°C 0.90 1.00 1.80
IR Maximum Reverse Current TJ = 25°C 2 mA
at Rated VR
TJ = 125°C 200 500
CJ Typical Junction Capacitance VR = 4 V, f = 1 MHz 60 45 pF
Trr Typical Reverse Recovery Time IF = 0.5 A, IR = 1 A, IRR = 0.25 A 25 ns
IF = 1 A, di/dt = 50 A/ms, VR = 30 V 45
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse test with PW = 300 ms, 1% duty cycle

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2
 FES6, NRVFES6 Series

TYPICAL CHARACTERISTICS

10 10
FES6D FES6G
IF − FORWARD CURRENT (A)

IF − FORWARD CURRENT (A)

1 1

o o
TA = −55 C TA = −55 C

o
0.1 o
TA = 25 C 0.1 TA = 25 C

o
o
TA = 75 C TA = 75 C

0.01 0.01 TA = 125 C

o
o
TA = 125 C

o
TA = 150 C
o TA = 150 C
0.001 0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF − FORWARD VOLTAGE (V) VF − FORWARD VOLTAGE (V)
Fig 1. Typical Forward Characteristics for FES6D Fig 2. Typical Forward Characteristics for FES6G
10 100
FES6J TA = 150 C
o o FES6D
TA = 125 C o

IR − LEAKAGE CURRENT (μA)

TA = 75 C
IF − FORWARD CURRENT (A)

10
1

o
1
TA = −55 C

0.1 0.1
o
TA = 25 C

o 0.01
TA = 75 C
0.01
o
TA = 125 C 0.001
o o
o
TA = 150 C TA = 25 C TA = −55 C
0.001 1E−4
0.0 0.5 1.0 1.5 2.0 2.5 0 50 100 150 200
VF − FORWARD VOLTAGE (V) VR − REVERSE VOLTAGE (V)

Fig 3. Typical Forward Characteristics for FES6J Fig 4. Typical Reverse Characteristics for FES6D

100 100
TA = 150 C
o o FES6G o FES6J
TA = 125 C TA = 150 C o
IR − LEAKAGE CURRENT (μA)

TA = 125 C
IR − LEAKAGE CURRENT (μA)

10 10

1 1
o
TA = 75 C o
TA = 75 C

0.1 0.1

0.01 0.01

o o
TA = 25 C TA = −55 C TA = 25 C
o
TA = −55 C
o

0.001 0.001
0 50 100 150 200 250 300 350 400 450 500 550 600 0 50 100 150 200 250 300 350 400 450 500 550 600
VR − REVERSE VOLTAGE (V) VR − REVERSE VOLTAGE (V)
Fig 5. Typical Reverse Characteristics for FES6G Fig 6. Typical Reverse Characteristics for FES6J

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3
 FES6, NRVFES6 Series

TYPICAL CHARACTERISTICS

8 1000
IF − AVERAGE FORWARD CURRENT (A)

CJ − JUNCTION CAPACITANCE (pF)

f=1MHz
7
TL (Cathode)
6
100
5

4
FESD6J
3
10 FESD6D & FESD6G
2
TA
1

0 1
0 25 50 75 100 125 150 175 0.1 1 10 100
o
TEMPERATURE ( C) VR − REVERSE BIAS VOLTAGE (V)

Fig 7. Forward Current Derating Curve Fig 8. Typical Junction Capacitance

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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−277−3LD
CASE 340BQ
ISSUE O
DATE 30 SEP 2016

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13861G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−277−3LD PAGE 1 OF 1

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