MJE15034 NPN,

MJE15035 PNP

Complementary Silicon
Plastic Power Transistors
TO−220, NPN & PNP Devices
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Complementary silicon plastic power transistors are designed for
use as high−frequency drivers in audio amplifiers. 4.0 AMPERES
POWER TRANSISTORS
Features
• hFE = 100 (Min) @ IC = 0.5 Adc COMPLEMENTARY SILICON
= 10 (Min) @ IC = 2.0 Adc 350 VOLTS, 50 WATTS
• Collector−Emitter Sustaining Voltage −
4
VCEO(sus) = 350 Vdc (Min) − MJE15034, MJE15035
• High Current Gain − Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
• TO−220AB Compact Package
• Epoxy meets UL 94 V−0 @ 0.125 in
TO−220AB
• ESD Ratings: Machine Model: C CASE 221A
Human Body Model: 3B 1 STYLE 1
2
• Pb−Free Packages are Available* 3

MAXIMUM RATINGS MARKING DIAGRAM

Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 350 Vdc
Collector−Base Voltage VCB 350 Vdc
Emitter−Base Voltage VEB 5.0 Vdc
MJE1503xG
Collector Current − Continuous IC 4.0 Adc AYWW
− Peak 8.0
Base Current IB 1.0 Adc
Total Power Dissipation @ TC = 25_C PD 50 W
Derate above 25_C 0.40 W/_C
Total Power Dissipation @ TA = 25_C PD 2.0 W MJE1503x = Device Code
Derate above 25_C 0.016 W/_C x = 4 or 5
A = Location Code
Operating and Storage Junction TJ, Tstg –65 to +150 _C
Y = Year
Temperature Range
WW = Work Week
THERMAL CHARACTERISTICS G = Pb−Free Package

Characteristic Symbol Max Unit

ORDERING INFORMATION
Thermal Resistance, Junction−to−Case RqJC 2.5 _C/W
Device Package Shipping
Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W
MJE15034 TO−220AB 50 Units / Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended MJE15034G TO−220AB 50 Units / Rail
Operating Conditions is not implied. Extended exposure to stresses above the (Pb−Free)
Recommended Operating Conditions may affect device reliability.
MJE15035 TO−220AB 50 Units / Rail

MJE15035G TO−220AB 50 Units / Rail

*For additional information on our Pb−Free strategy and soldering details, please (Pb−Free)
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2011 1 Publication Order Number:

October, 2011 − Rev. 4 MJE15034/D
 MJE15034 NPN, MJE15035 PNP

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) VCEO(sus) 350 − Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (VCB = 350 Vdc, IE = 0) ICBO − 10 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 10 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
DC Current Gain hFE
(IC = 0.1 Adc, VCE = 5.0 Vdc) 100 − −

ÎÎÎÎ
(IC = 0.5 Adc, VCE = 5.0 Vdc) 100 −
(IC = 1.0 Adc, VCE = 5.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
50 −
(IC = 2.0 Adc, VCE = 5.0 Vdc) 10 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) − 0.5 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 5.0 Vdc) VBE(on) − 1.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current Gain − Bandwidth Product (Note 2) fT 30 − MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. fT = ⎪hfe⎪• ftest.

10
TA TC
IC, COLLECTOR CURRENT (AMPS)

100mS
PD, POWER DISSIPATION (WATTS)

3.0 60 DC
1.0

2.0 40

TC 0.1
1.0 20 TA

0 0 0.01
0 20 40 60 80 100 120 140 160 1.0 10 100 1000
T, TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Power Derating Figure 2. Active Region Safe Operating Area

1.0
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED)
r(t), TRANSIENT THERMAL

0.3
0.2
0.2
0.1
0.1 P(pk)
ZqJC(t) = r(t) RqJC
0.07 0.05 RqJC = 2.5°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
PULSE TRAIN SHOWN t1
0.03
READ TIME AT t1 t2
0.02 0.01 TJ(pk) - TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)
Figure 3. Thermal Response

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 MJE15034 NPN, MJE15035 PNP

1000 1000
TJ = 150°C
TJ = 150°C
25°C
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

25°C −40°C
100 −40°C 100

10 10

1.0 1.0
0.01 0.1 1.0 10 0.01 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 4. DC Current Gain, VCE = 5.0 V Figure 5. DC Current Gain, VCE = 5.0 V
NPN MJE15034 PNP MJE15035

1000 1000
TJ = 150°C
TJ = 150°C
25°C
25°C
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

−40°C
100 −40°C 100

10 10

1.0 1.0
0.01 0.1 1.0 10 0.01 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 6. DC Current Gain, VCE = 20 V Figure 7. DC Current Gain, VCE = 20 V

NPN MJE15034 PNP MJE15035
VCE, COLLECTOR−EMITTER VOLTAGE (V)

VCE, COLLECTOR−EMITTER VOLTAGE (V)

10 10
IC/IB = 10 IC/IB = 10

1.0 1.0
25°C −40°C

TJ = 150°C
0.1 0.1 TJ = 150°C

−40°C
25°C

0.01 0.01
0.01 0.1 1.0 10 0.01 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 8. VCE(sat) Figure 9. VCE(sat)

NPN MJE15034 PNP MJE15035

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 MJE15034 NPN, MJE15035 PNP

10 10
IC/IB = 10 IC/IB = 10
BASE−EMITTER VOLTAGE (V)

BASE−EMITTER VOLTAGE (V)

1.0 −40°C 1.0 −40°C

25°C 25°C
TJ = 150°C TJ = 150°C

0.1 0.1
0.01 0.1 1.0 10 0.01 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 10. VBE(sat) Figure 11. VBE(sat)

NPN MJE15034 PNP MJE15035

1.2 1.4
VBE(on), BASE−EMITTER VOLTAGE (V)

VBE(on), BASE−EMITTER VOLTAGE (V)

1.0 1.2

−40°C 1.0
0.8
−40°C
0.8
0.6
25°C 0.6 25°C
0.4
0.4
TJ = 150°C
TJ = 150°C
0.2 0.2

0.0 0.0
0.01 0.1 1.0 10 0.01 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 12. VBE(on) Figure 13. VBE(on)

NPN MJE15034 PNP MJE15035
fT, CURRENT BANDWIDTH PRODUCT (MHz)
fT, CURRENT BANDWIDTH PRODUCT (MHz)

80 100

70 TJ = 25°C TJ = 25°C
f test = 1 MHz 80 f test = 1 MHz
60

50 60
40

30 40
VCE= 10 V
20 VCE= 10 V
20
10

0 0
0.001 0.01 0.1 1.0 10 0.001 0.01 0.1 1.0 10

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 14. Typical Current Gain Bandwidth Product Figure 15. Typical Current Gain Bandwidth Product
NPN MJE15034 PNP MJE15035

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 MJE15034 NPN, MJE15035 PNP

PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T S
ALLOWED.

INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
1 2 3 U D 0.025 0.036 0.64 0.91
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.025 0.36 0.64
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
D V
Z
0.045
---
---
0.080
1.15
---
---
2.04
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

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