MJE340

Plastic Medium−Power
NPN Silicon Transistor
This device is useful for high−voltage general purpose applications.

Features
• Suitable for Transformerless, Line−Operated Equipment http://onsemi.com
• Thermopad Construction Provides High Power Dissipation Rating
for High Reliability 0.5 AMPERE
• Pb−Free Package is Available* POWER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS 300 VOLTS, 20 WATTS

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Rating Symbol Value Unit

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector−Emitter Voltage VCEO 300 Vdc

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Emitter−Base Voltage VEB 3.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Current − Continuous IC 500 mAdc

ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Total Power Dissipation @ TC = 25_C PD 20 W TO−225
Derate above 25_C 0.16 mW/_C

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
CASE 77
Operating and Storage Junction TJ, Tstg –65 to +150 _C STYLE 1

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Temperature Range 3
2 1

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case qJC 6.25 _C/W MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
YWW
JE340G
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Y = Year
Collector−Emitter Sustaining Voltage VCEO(sus) 300 − Vdc WW = Work Week

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(IC = 1.0 mAdc, IB = 0)
JE340 = Device Code
Collector Cutoff Current ICBO − 100 mAdc G = Pb−Free Package

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
(VCB = 300 Vdc, IE = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
Emitter Cutoff Current IEBO − 100 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(VEB = 3.0 Vdc, IC = 0) ORDERING INFORMATION

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ON CHARACTERISTICS Device Package Shipping
DC Current Gain hFE 30 240 −

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(IC = 50 mAdc, VCE = 10 Vdc) MJE340 TO−225 500 Units/Box

MJE340G TO−225 500 Units/Box

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

February, 2006 − Rev. 11 MJE340/D
 MJE340

32 1.0

28 TJ = 25°C
PD, POWER DISSIPATION (WATTS)

0.8 VBE(sat) @ IC/IB = 10

24

V, VOLTAGE (VOLTS)
20 0.6 VBE @ VCE = 10 V

16

12 0.4

MJE340 VCE(sat) @ IC/IB = 10

8.0
0.2
4.0 IC/IB = 5.0
0 0
0 20 40 60 80 100 120 140 160 10 20 30 50 100 200 300 500
TC, CASE TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA)
Figure 1. Power Temperature Derating Figure 2. “On” Voltages

ACTIVE−REGION SAFE OPERATING AREA There are two limitations on the power handling ability of
a transistor: average junction temperature and second
1.0 breakdown. Safe operating area curves indicate IC − VCE
10 ms limits of the transistor that must be observed for reliable
IC, COLLECTOR CURRENT (AMP)

0.5 operation; i.e., the transistor must not be subjected to greater

0.3 TJ = 150°C 500 ms
dissipation than the curves indicate.The data of Figure 3 is
0.2 dc 1.0ms based on T J(pk) = 150_C; TC is variable depending on
conditions. Second breakdown pulse limits are valid for
0.1 duty cycles to 10% provided TJ(pk) v 150_C. At high case
temperatures, thermal limitations will reduce the power that
0.05
SECOND BREAKDOWN LIMIT
can be handled to values less than the limitations imposed by
0.03 BONDING WIRE LIMIT second breakdown.
0.02 THERMAL LIMIT TC = 25°C
SINGLE PULSE
0.01
10 20 30 50 70 100 200 300
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 3. MJE340

http://onsemi.com
2
 MJE340

10 2.0
hFE , DC CURRENT GAIN, NORMALIZED 7.0 TJ = 25°C
5.0 150°C
VCE = 1.0 Vdc 1.6 TJ = 25°C
3.0

VOLTAGE (VOLTS)
2.0
−55 °C 1.2
1.0
0.7 0.8 VBE(sat) @ IC/IB = 10
0.5
VBE(on) @ VCE = 1.0 V
0.3
0.4
0.2
VCE(sat) @ IC/IB = 10
0.1 0
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 4. DC Current Gain Figure 5. “On” Voltage

1.0
THERMAL RESISTANCE (NORMALIZED)

0.7
D = 0.5
0.5
r(t), EFFECTIVE TRANSIENT

0.3
0.2
0.2 P(pk)
qJC(t) = r(t) qJC
0.1
qJC = 3.12°C/W MAX
0.1 0.05 D CURVES APPLY FOR POWER
0.07 PULSE TRAIN SHOWN
0.02 t1
0.05 READ TIME AT t1 t2
0.03 TJ(pk) − TC = P(pk) qJC(t)
0.01 DUTY CYCLE, D = t1/t2
0.02
SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 50 100 200 500 1000
t, TIME OR PULSE WIDTH (ms)

Figure 6. Thermal Response

300

200 VCE = 10 V
VCE = 2.0 V
hFE , DC CURRENT GAIN

100 TJ = 150°C

70
+100°C
50
+25 °C
30

20 −55 °C

10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mAdc)

Figure 7. DC Current Gain

http://onsemi.com
3
 MJE340

PACKAGE DIMENSIONS

TO−225
CASE 77−09
ISSUE Z

NOTES:
−B− 1. DIMENSIONING AND TOLERANCING PER ANSI
U F C Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Q 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
M 077−09.
−A−
INCHES MILLIMETERS
1 2 3 DIM MIN MAX MIN MAX
A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
H C 0.095 0.105 2.42 2.66
K D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
V J K 0.575 0.655 14.61 16.63
M 5_ TYP 5 _ TYP
G R Q 0.148 0.158 3.76 4.01
S 0.25 (0.010) M A M B M R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
D 2 PL U 0.145 0.155 3.69 3.93
V 0.040 −−− 1.02 −−−
0.25 (0.010) M A M B M
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: http://onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Order Literature: http://www.onsemi.com/litorder
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your
Email: orderlit@onsemi.com Phone: 81−3−5773−3850 local Sales Representative.

http://onsemi.com MJE340/D
4