DATA SHEET

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Complementary Silicon 15 AMPERE

Power Transistors POWER TRANSISTORS
COMPLEMENTARY SILICON
2N3055(NPN), MJ2955(PNP) 60 VOLTS, 115 WATTS
Complementary silicon power transistors are designed for
general−purpose switching and amplifier applications.

Features TO−204AA (TO−3)

 DC Current Gain − hFE = 20 −70 @ IC = 4 Adc CASE 1−07
STYLE 1
 Collector−Emitter Saturation Voltage −
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
 Excellent Safe Operating Area
 Pb−Free Packages are Available*
MARKING DIAGRAM

MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 60 Vdc xxxx55G
Collector−Emitter Voltage VCER 70 Vdc AYYWW
MEX
Collector−Base Voltage VCB 100 Vdc
Emitter−Base Voltage VEB 7 Vdc
Collector Current − Continuous IC 15 Adc
xxxx55 = Device Code
Base Current IB 7 Adc
xxxx = 2N30 or MJ20
Total Power Dissipation @ TC = 25C PD 115 W G = Pb−Free Package
Derate Above 25C 0.657 W/C A = Location Code
YY = Year
Operating and Storage Junction TJ, Tstg −65 to +200 C
WW = Work Week
Temperature Range
MEX = Country of Orgin
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected. ORDERING INFORMATION

160 Device Package Shipping

2N3055 TO−204AA 100 Units / Tray
140
PD, POWER DISSIPATION (WATTS)

2N3055G TO−204AA 100 Units / Tray

120 (Pb−Free)

100 MJ2955 TO−204AA 100 Units / Tray

80 MJ2955G TO−204AA 100 Units / Tray

(Pb−Free)
60
Preferred devices are recommended choices for future use
40 and best overall value.

20

0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (C)
Figure 1. Power Derating

*For additional information on our Pb−Free strategy and soldering details, please
download the onsemi Soldering and Mounting Techniques Reference Manual,
SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2005 1 Publication Order Number:

October, 2024 − Rev. 7 2N3055/D
 2N3055(NPN), MJ2955(PNP)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction−to−Case
Characteristic Symbol
RqJC
Max
1.52
Unit
C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS*
Characteristic Symbol Min Max Unit

Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0) VCEO(sus) 60 − Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, RBE = 100 W) VCER(sus) 70 − Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
ICEO
ICEX
− 0.7 mAdc
mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc) − 1.0
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) − 5.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO − 5.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS* (Note 1)
DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
hFE
20 70
−

(IC = 10 Adc, VCE = 4.0 Vdc) 5.0 −

Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 4.0 Adc, IB = 400 mAdc) − 1.1
(IC = 10 Adc, IB = 3.3 Adc) 3.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) − 1.5 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Second Breakdown Collector Current with Base Forward Biased Is/b 2.87 − Adc
(VCE = 40 Vdc, t = 1.0 s, Nonrepetitive)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current Gain − Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT 2.5 − MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*Small−Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) hfe 15 120 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*Small−Signal Current Gain Cutoff Frequency (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz) fhfe 10
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
− kHz

*Indicates Within JEDEC Registration. (2N3055)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

20 There are two limitations on the power handling ability of

50 ms a transistor: average junction temperature and second
10 dc
IC, COLLECTOR CURRENT (AMP)

1 ms breakdown. Safe operating area curves indicate IC − VCE

6 limits of the transistor that must be observed for reliable
4 operation; i.e., the transistor must not be subjected to greater
500 ms dissipation than the curves indicate.
2 250 ms The data of Figure 2 is based on TC = 25C; TJ(pk) is
variable depending on power level. Second breakdown
1 pulse limits are valid for duty cycles to 10% but must be
0.6 derated for temperature according to Figure 1.
BONDING WIRE LIMIT
0.4 THERMALLY LIMITED @ TC = 25C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
0.2
6 10 20 40 60
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Active Region Safe Operating Area

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 2N3055(NPN), MJ2955(PNP)

500 200
300 VCE = 4.0 V VCE = 4.0 V
TJ = 150C TJ = 150C
200 25C
100
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

25C
100 70 -55C
70 -55C
50
50

30 30
20
20
10
7.0
5.0 10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 3. DC Current Gain, 2N3055 (NPN) Figure 4. DC Current Gain, MJ2955 (PNP)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

2.0 2.0
TJ = 25C TJ = 25C
1.6 1.6
IC = 1.0 A 4.0 A 8.0 A IC = 1.0 A 4.0 A 8.0 A

1.2 1.2

0.8 0.8

0.4 0.4

0 0
5.0 10 20 50 100 200 500 1000 2000 5000 5.0 10 20 50 100 200 500 1000 2000 5000
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)

Figure 5. Collector Saturation Region, Figure 6. Collector Saturation Region,

2N3055 (NPN) MJ2955 (PNP)

1.4 2.0
TJ = 25C TJ = 25C
1.2
1.6
V, VOLTAGE (VOLTS)

1.0
V, VOLTAGE (VOLTS)

0.8 1.2 VBE(sat) @ IC/IB = 10

VBE(sat) @ IC/IB = 10
VBE @ VCE = 4.0 V
0.6 VBE @ VCE = 4.0 V 0.8

0.4
0.4
0.2 VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
0 0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMP)
Figure 7. “On” Voltages, 2N3055 (NPN) Figure 8. “On” Voltages, MJ2955 (PNP)

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−204 (TO−3)
CASE 1−07
ISSUE Z DATE 05/18/1988

SCALE 1:1

A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
N Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C 3. ALL RULES AND NOTES ASSOCIATED WITH
−T− SEATING REFERENCED TO-204AA OUTLINE SHALL APPLY.
PLANE
E
INCHES MILLIMETERS
D 2 PL K DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
0.13 (0.005) M T Q M Y M
B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
U
L −Y− E 0.055 0.070 1.40 1.77
V G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
2 K 0.440 0.480 11.18 12.19
G B L 0.665 BSC 16.89 BSC
H 1 N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
−Q− V 0.131 0.188 3.33 4.77

0.13 (0.005) M T Y M

STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:

PIN 1. BASE PIN 1. BASE PIN 1. GATE PIN 1. GROUND PIN 1. CATHODE
2. EMITTER 2. COLLECTOR 2. SOURCE 2. INPUT 2. EXTERNAL TRIP/DELAY
CASE: COLLECTOR CASE: EMITTER CASE: DRAIN CASE: OUTPUT CASE: ANODE

STYLE 6: STYLE 7: STYLE 8: STYLE 9:

PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE #1 PIN 1. ANODE #1
2. EMITTER 2. OPEN 2. CATHODE #2 2. ANODE #2
CASE: COLLECTOR CASE: CATHODE CASE: ANODE CASE: CATHODE

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© Semiconductor Components Industries, LLC, 2000 1 Case Outline Number:

January, 2000 − Rev. 07Z 1
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