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by BDX53B/D
SEMICONDUCTOR TECHNICAL DATA

  ! 

 
" 
  
. . . designed for general–purpose amplifier and low–speed switching applications. 
• High DC Current Gain —  
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector Emitter Sustaining Voltage — @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) — BDX53B, 54B  
VCEO(sus) = 100 Vdc (Min) — BDX53C, 54C
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc DARLINGTON

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc 8 AMPERE
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
COMPLEMENTARY
• TO–220AB Compact Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SILICON
POWER TRANSISTORS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS 80 – 100 VOLTS

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
BDX53B BDX53C 65 WATTS

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating Symbol BDX54B BDX54C Unit

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage VCEO 80 100 Vdc
Collector–Base Voltage VCB 80 100 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage VEB 5.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous IC 8.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Peak 12

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current IB 0.2 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25_C PD 60 Watts
Derate above 25_C 0.48 W/_C

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Operating and Storage Junction TJ, Tstg – 65 to + 150 _C

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Temperature Range
CASE 221A–06

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS TO–220AB

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Ambient RθJA 70 _C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case RθJC 70 _C/W

TA TC
4.0 80
PD, POWER DISSIPATION (WATTS)

3.0 60

TC

2.0 40

TA
1.0 20

0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)

Figure 1. Power Derating

REV 7

 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data

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 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
   

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1) VCEO(sus) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 100 mAdc, IB = 0) BDX53B, BDX54B 80 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
BDX53C, BDX54C 100 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEO mAdc
(VCE = 40 Vdc, IB = 0) BDX53B, BDX54B — 0.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 50 Vdc, IB = 0) BDX53C, BDX54C — 0.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICBO mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCB = 80 Vdc, IE = 0) BDX53B, BDX54B — 0.2
(VCB = 100 Vdc, IE = 0) BDX53C, BDX54C — 0.2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain hFE 750 — —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 3.0 Adc, VCE = 3.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage VCE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 3.0 Adc, IB = 12 mAdc) — 2.0
— 4.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
Base–Emitter Saturation Voltage
ÎÎÎÎÎÎÎ VBE(sat) — 2.5 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 3.0 Adc, IC = 12 mA)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small–Signal Current Gain hfe 4.0 — —
(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance Cob pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDX53B, 53C — 300

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
BDX54B, 54C — 200
v v
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.

5.0
VCC ts
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS – 30 V 3.0
D1 MUST BE FAST RECOVERY TYPES, e.g.:
[
2.0
1N5825 USED ABOVE IB 100 mA
[
MSD6100 USED BELOW IB 100 mA
RC
SCOPE 1.0 tf
t, TIME ( µs)

TUT
0.7
V2 RB
0.5
APPROX
+ 8.0 V
0
51 D1 [
8.0 k [
120
0.3
0.2
tr
VCC = 30 V
V1 + 4.0 V IC/IB = 250
0.1 IB1 = IB2
APPROX 25 µs 0.07 TJ = 25°C td @ VBE(off) = 0 V
–12 V for td and tr, D1 is disconnected
v
tr, tf 10 ns and V2 = 0
For NPN test circuit reverse all polarities
0.05
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
DUTY CYCLE = 1.0% IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Test Circuit Figure 3. Switching Times

2 Motorola Bipolar Power Transistor Device Data

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1.0

THERMAL RESISTANCE (NORMALIZED)

0.7 D = 0.5
r(t) EFFECTIVE TRANSIENT 0.5
0.3 0.2
0.2
0.1
P(pk)
0.1 0.05 RθJC(t) = r(t) RθJC
0.07 0.02 RθJC = 1.92°C/W
0.05 D CURVES APPLY FOR POWER
t1 SINGLE PULSE TRAIN SHOWN
0.03 SINGLE PULSE t2 PULSE READ TIME AT t1
0.02 0.01
DUTY CYCLE, D = t1/t2 TJ(pk) – TC = P(pk) RθJC(t)

0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME OR PULSE WIDTH (ms)

Figure 4. Thermal Response

20
100 µs There are two limitations on the power handling ability of a
10 500 µs
transistor average junction temperature and second break-
IC, COLLECTOR CURRENT (AMP)

5.0 down. Safe operating area curves indicate I C –VCE limits of

5.0 ms
2.0 1.0 ms
dc the transistor that must be observed for reliable operation,
TJ = 150°C i.e., the transistor must not be subjected to greater dissipa-
1.0 BONDING WIRE LIMITED tion than the curves indicate.
0.5
THERMALLY LIMITED @ TC = 25°C The data of Figure 5 is based on TJ(pk) = 150_C; TC is
(SINGLE PULSE)
variable depending on conditions. Second breakdown pulse
0.2 SECOND BREAKDOWN LIMITED
limits are valid for duty cycles to 10% provided T J(pk)
0.1
CURVES APPLY BELOW RATED VCEO
t 150_C. TJ(pk) may be calculated from the data in Fig-
0.05 ure 4. At high case temperatures, thermal limitations will
BDX53B, BDX54B
reduce the power that can be handled to values less than the
BDX53C, BDX54C
0.02 limitations imposed by second breakdown.
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Active–Region Safe Operating Area

10,000 300
TJ = + 25°C
hFE, SMALL–SIGNAL CURRENT GAIN

5000
3000 200
2000
C, CAPACITANCE (pF)

1000

500
100 Cob
300 TJ = 25°C
200
VCE = 3.0 V
70 Cib
100 IC = 3.0 A
50 50
30 PNP PNP
20 NPN NPN
10 30
1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Small-Signal Current Gain Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data 3

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NPN PNP
BDX53B, 53C BDX54B, 54C

20,000 20,000
VCE = 4.0 V VCE = 4.0 V
10,000 10,000
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

5000 TJ = 150°C 5000 TJ = 150°C
3000 3000
2000 2000 25°C
25°C
1000 1000
– 55°C – 55°C
500 500

300 300
200 200
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

3.0 3.0
TJ = 25°C TJ = 25°C

2.6 2.6
IC = 2.0 A 4.0 A 6.0 A IC = 2.0 A 4.0 A 6.0 A

2.2 2.2

1.8 1.8

1.4 1.4

1.0 1.0
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region

3.0 3.0
TJ = 25°C TJ = 25°C

2.5 2.5
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

2.0 2.0

1.5 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4.0 V

VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250

1.0 1.0
VCE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages

4 Motorola Bipolar Power Transistor Device Data

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NPN PNP
BDX53B, BDX53C BDX54B, BDX54C
θV, TEMPERATURE COEFFICIENT (mV/ °C) + 5.0 + 5.0

θV, TEMPERATURE COEFFICIENT (mV/ °C)

+ 4.0
*IC/IB v hFE/3 + 4.0
*IC/IB v hFE/3
+ 3.0 + 3.0
+ 2.0 25°C to 150°C + 2.0 25°C to 150°C
+ 1.0 + 1.0
– 55°C to 25°C – 55°C to 25°C
0 0
– 1.0 *θVC for VCE(sat) – 1.0 *θVC for VCE(sat)
– 2.0 – 2.0
25°C to 150°C 25°C to 150°C
– 3.0 θVB for VBE – 3.0 θVB for VBE
– 4.0 – 55 to 150°C – 4.0 – 55 to 150°C

– 5.0 – 5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients

105 105
REVERSE FORWARD REVERSE FORWARD
104 104
IC, COLLECTOR CURRENT ( µA)

IC, COLLECTOR CURRENT ( µA)

VCE = 30 V VCE = 30 V
103 103

102 102
TJ = 150°C TJ = 150°C
101 101
100°C
100°C 100
100 25°C
25°C
10– 1 10– 1
– 0.6 – 0.4 – 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2 + 1.4 + 0.6 + 0.4 + 0.2 0 – 0.2 – 0.4 – 0.6 – 0.8 – 1.0 – 1.2 – 1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut–Off Region

NPN COLLECTOR PNP COLLECTOR

BDX53B BDX54B
BDX53C BDX54C

BASE BASE

[ 8.0 k [ 120 [ 8.0 k [ 120

EMITTER EMITTER

Figure 13. Darlington Schematic

Motorola Bipolar Power Transistor Device Data 5

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PACKAGE DIMENSIONS

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
–T– PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04

STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

CASE 221A–06
TO–220AB
ISSUE Y

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and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
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6 Motorola Bipolar Power Transistor Device Data

*BDX53B/D*
◊ BDX53B/D

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