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P-Channel MOSFET AO4427 Specs

This document provides specifications for a P-channel MOSFET transistor. Key specifications include: - Maximum drain-source voltage of -30V - Continuous drain current rating of -12.5A at 25°C and -10.5A at 70°C - On-resistance below 12mΩ when gate-source voltage is -20V and below 14mΩ at -10V gate-source voltage - Packaged in an SOP-8 package

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Nur Aishi Putri Syaril
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107 views4 pages

P-Channel MOSFET AO4427 Specs

This document provides specifications for a P-channel MOSFET transistor. Key specifications include: - Maximum drain-source voltage of -30V - Continuous drain current rating of -12.5A at 25°C and -10.5A at 70°C - On-resistance below 12mΩ when gate-source voltage is -20V and below 14mΩ at -10V gate-source voltage - Packaged in an SOP-8 package

Uploaded by

Nur Aishi Putri Syaril
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SMD Type MOSFET

P-Channel MOSFET
AO4427 (KO4427)

SOP-8
■ Features
● VDS (V) =-30V
● ID =-12.5 A (VGS =-20V)
● RDS(ON) ＜ 12mΩ (VGS =-20V)
1.50 0.15
● RDS(ON) ＜ 14mΩ (VGS =-10V)
● ESD Rating: 2000V HBM

+0.04
0.21 -0.02
1 Source 5 Drain
2 Source 6 Drain
3 Source 7 Drain
4 Gate 8 Drain

■ Absolute Maximum Ratings Ta = 25℃


Parameter Symbol Rating Unit
Drain-Source Voltage VDS -30
V
Gate-Source Voltage VGS ±25
TA=25°C -12.5
Continuous Drain Current ID
TA=70°C -10.5 A
Pulsed Drain Current IDM -60
TA=25°C 3
Power Dissipation PD W
TA=70°C 2.1
t ≤ 10s 40
Thermal Resistance.Junction- to-Ambient RthJA
Steady-State 75 ℃/W
Thermal Resistance.Junction- to-Lead RthJL 30
Junction Temperature TJ 150
℃
Junction Storage Temperature Range Tstg -55 to 150

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SMD Type MOSFET

P-Channel MOSFET
AO4427 (KO4427)
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -30 V
VDS=-24V, VGS=0V -1
Zero Gate Voltage Drain Current IDSS uA
VDS=-24V, VGS=0V, TJ=55℃ -5
Gate-Body leakage current IGSS VDS=0V, VGS=±25V ±1 uA
Gate Threshold Voltage VGS(th) VDS=VGS ,ID=-250μA -1.7 -3 V
VGS=-20V, ID=-12.5A 12
VGS=-20V, ID=-12.5A TJ=125℃ 15
Static Drain-Source On-Resistance RDS(On) mΩ
VGS=-10V, ID=-10A 14
VGS=-4.5V, ID=-5A 32
On state drain current ID(ON) VGS=-10V, VDS=-5V -60 A
Forward Transconductance gFS VDS=-5V, ID=-12.5A 24 S
Input Capacitance Ciss 2330 2900
Output Capacitance Coss VGS=0V, VDS=-15V, f=1MHz 480 pF
Reverse Transfer Capacitance Crss 320
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 6.8 10 Ω
Total Gate Charge Qg 41 52
Gate Source Charge Qgs VGS=-10V, VDS=-15V, ID=-12.5A 10 nC
Gate Drain Charge Qgd 12
Turn-On DelayTime td(on) 12.8
Turn-On Rise Time tr VGS=-10V, VDS=-15V, RL=1.2Ω, 10.3
Turn-Off DelayTime td(off) RGEN=3Ω 49.5 ns
Turn-Off Fall Time tf 29
Body Diode Reverse Recovery Time trr 28 35
IF=-12.5A, dI/dt=100A/us
Body Diode Reverse Recovery Charge Qrr 20 nC
Maximum Body-Diode Continuous Current IS -4.2 A
Diode Forward Voltage VSD IS=-1A,VGS=0V -1 V

Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.

■ Marking
4427
Marking
KC****

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SMD Type MOSFET

P-Channel MOSFET
AO4427 (KO4427)
■ Typical Characterisitics
30 25
-6V
-10V VDS=-5V
-5V
20

20
-4.5V 15
-ID (A)

-ID(A)
125°C
10
10

VGS=-4V 5
25°C

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

12 1.6
Normalized On-Resistance

11 1.4 VGS=-10V
VGS=-10V
ID=-10A
RDS(ON) (mΩ)

D=-12.5A
10 1.2
VGS=-20V
ID=-12.5A
9 1
VGS=-20V

8 0.8
0 5 10 15 20 25 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

50 1.0E+01
ID=-12.5A
1.0E+00
40
1.0E-01
125°C
30
1.0E-02
-IS (A)

125°C
DS(ON)

20 1.0E-03

1.0E-04
10 25°C 25°C
1.0E-05

0 1.0E-06
4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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SMD Type MOSFET

P-Channel MOSFET
AO4427 (KO4427)
■ Typical Characterisitics
10 3000
VDS=-15V
ID=-12.5A Ciss
2500
8

Capacitance (pF)
2000
-VGS (Volts)

6
1500
Coss
4
1000 Crss

2
500

0 0
0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
40
RDS(ON) TJ(Max)=150°C
limited 100µs 10µs TA=25°C
1ms 30
10.0
V
Power (W)

10ms
GS
-ID (Amps)

0.1s 20

1.0 1s
10
10s
TJ(Max)=150°C
TA=25°C
DC 0
0.1 0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100 Pulse Width (s)
-VDS (Volts) . Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=40°C/W
Thermal Resistance

PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

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