FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode

November 2006

FDFS2P753Z
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
-30V, -3A, 115mΩ
Features General Description
„ Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753Z combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very low
„ Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A
forward voltage drop Schottky barrier rectifier in an SO-8
„ VF < 500mV @ 1A package.
VF < 580mV @ 2A This device is designed specifically as a single package solution
for DC to DC converters. It features a fast switching, low gate
„ Schottky and MOSFET incorporated into single power surface charge MOSFET with very low on-state resistance. The
mount SO-8 package independently connected Schottky diode allows its use in a
variety of DC/DC converter topologies.
„ Electrically independent Schottky and MOSFET pinout for
design flexibility Application
„ RoHS Compliant „ DC - DC Conversion

D
D
C D 5 4 G
C
D 6 3 S

C 7 2 A
SO-8 G
S
C 8 1 A
A
Pin 1 A

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage -30 V
VGS Gate to Source Voltage ±25 V
Drain Current -Continuous (Note 1a) -3
ID A
-Pulsed -16
PD Power Dissipation (Note 1a) 1.6 W
EAS Single Pulse Avalanche Energy (Note 2) 6 mJ
VRRM Schotty Repetitive Peak Reverse Voltage -20 V
IO Schotty Average Forward Current (Note 1a) -2 A
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 78
°C/W
RθJC Thermal Resistance, Junction to Case (Note 1) 40

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDFS2P753Z FDFS2P753Z SO-8 330mm 12mm 2500 units

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDFS2P753Z Rev.A
 FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -30 V
∆BVDSS Breakdown Voltage Temperature
ID = -250µA, referenced to 25°C -21 mV/°C
∆TJ Coefficient
VDS = -24V, -1
IDSS Zero Gate Voltage Drain Current µA
VGS = 0V TJ = 125°C -100
IGSS Gate to Source Leakage Current VGS = ±25V, VDS = 0V ±10 µA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1 -2.1 -3 V
∆VGS(th) Gate to Source Threshold Voltage
ID = -250µA, referenced to 25°C 5 mV/°C
∆TJ Temperature Coefficient
VGS = -10V, ID = -3.0A 69 115
VGS = -4.5V, ID = -1.5A 115 180
rDS(on) Drain to Source On-Resistance mΩ
VGS = -10V, ID = -3.0A, TJ =
97 162
125°C
gFS Forward Transconductance VDS = -5V, ID = -3.0A 6 S

Dynamic Characteristics
Ciss Input Capacitance 340 455 pF
VDS = -10V, VGS = 0V,
Coss Output Capacitance 80 110 pF
f = 1MHz
Crss Reverse Transfer Capacitance 65 100 pF
Rg Gate Resistance f = 1MHz 18 Ω

Switching Characteristics
td(on) Turn-On Delay Time 7 14 ns
tr Rise Time VDD = -10V, ID = -3.0A 31 50 ns
VGS = -10V, RGEN = 6Ω
td(off) Turn-Off Delay Time 18 33 ns
tf Fall Time 20 35 ns
Qg(TOT) Total Gate Charge at -10V VGS = 0V to -10V 6.6 9.3 nC
Qg(4.5) Total Gate Charge at -4.5V VGS = 0V to -4.5V VDD = -10V 3.3 4.6 nC
ID = -3.0A
Qgs Gate to Source Gate Charge 1.3 nC
Qgd Gate to Drain “Miller” Charge 1.6 nC

Drain-Source Diode Characteristics

VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.0A (Note 3) -0.9 -1.2 V
trr Reverse Recovery Time 20 30 ns
IF = -3.0A, di/dt = 100A/µs
Qrr Reverse Recovery Charge 14 21 nC

Schottky Diode Characteristics

TJ = 25°C 190 µA
IR Reverse Leakage VF = 20V
TJ = 125°C 66 mA
TJ = 25°C 0.5
IF = 1A
TJ = 125°C 0.39
VF Forward Voltage V
TJ = 25°C 0.58
IF = 2A
TJ = 125°C 0.53

FDFS2P753Z Rev.A 2 www.fairchildsemi.com

 FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.

a) 78°C/W when b) 135°C/W when

mounted on a 0.5in2 mounted on a
pad of 2 oz copper minimun pad

2: Starting TJ = 25oC, L = 3mH, IAS = 2A, VDD = 27V, VGS = 10V

3: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

FDFS2P753Z Rev.A 3 www.fairchildsemi.com

 FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Typical Characteristics TJ = 25°C unless otherwise noted

16 4.0

DRAIN TO SOURCE ON-RESISTANCE

VGS = -10V PULSE DURATION = 80µs PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX 3.5 DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)

12
3.0 VGS = 3.5V
VGS = -5V VGS = 4V

NORMALIZED
VGS = -5V
2.5
8
VGS = -4.5V
2.0

1.5 VGS = -4.5V

4 VGS = -4V

1.0
VGS = -3.5V VGS = -10V
0 0.5
0 1 2 3 4 5 0 4 8 12 16
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A)

Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.6 450
DRAIN TO SOURCE ON-RESISTANCE

ID = -3A ID = -3A PULSE DURATION = 80µs

400

SOURCE ON-RESISTANCE (mΩ)

VGS = -10V DUTY CYCLE = 0.5%MAX
1.4 rDS(on), DRAIN TO 350

300
NORMALIZED

1.2
250
TJ = 150oC
1.0 200

150
0.8
100
TJ = 25oC
0.6 50
-75 -50 -25 0 25 50 75 100 125 150 3 4 5 6 7 8 9 10
TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On-Resistance Figure 4. On-Resistance vs Gate to

vs Junction Temperature Source Voltage

16 20
-IS, REVERSE DRAIN CURRENT (A)

PULSE DURATION = 80µs 10 VGS = 0V

DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)

12
1 TJ = 150oC
TJ = 150oC
8 TJ = 25oC
0.1 TJ = 25oC

4 0.01
TJ = -55oC
TJ = -55oC
0 1E-3
1 2 3 4 5 6 0.2 0.4 0.6 0.8 1.0 1.2
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

FDFS2P753Z Rev.A 4 www.fairchildsemi.com

 FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Typical Characteristics TJ = 25°C unless otherwise noted
10 800
-VGS, GATE TO SOURCE VOLTAGE(V)

VDD = -5V
8

CAPACITANCE (pF)
Ciss
6
VDD = -10V
Coss
100
4
VDD = -15V
f = 1MHz
2 VGS = 0V
Crss

0 20
0 2 4 6 8 0.1 1 10 30
-Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain

to Source Voltage

4 3.5
-IAS, AVALANCHE CURRENT(A)

3.0

-ID, DRAIN CURRENT (A)

3
2.5 VGS = -10V

TJ = 25oC 2.0
2
1.5
TJ = 125oC VGS = -4.5V
1.0

0.5 o
RθJA = 78 C/W
1 0.0
0.01 0.1 1 25 50 75 100 125 150
o
tAV, TIME IN AVALANCHE(ms) TA, AMBIENT TEMPERATURE ( C)

Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain

Switching Capability Current vs Case Temperature

30 200
P(PK), PEAK TRANSIENT POWER (W)

100 VGS = -10V

10
-ID, DRAIN CURRENT (A)

FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
100us
CURRENT AS FOLLOWS:
150 – T
1 1ms I = I25 A
------------------------
125
10ms 10
TA = 25oC
100ms
OPERATION IN THIS
0.1 AREA MAY BE
1s
LIMITED BY rDS(on) SINGLE PULSE 10s
TJ = MAX RATED DC SINGLE PULSE
TA = 25OC 1
0.01 0.6
0.1 1 10 80 10
-4
10
-3
10
-2
10
-1
10 10
0 1 2
10 10
3

-VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s)

Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation

FDFS2P753Z Rev.A 5 www.fairchildsemi.com

 FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Typical Characteristics TJ = 25°C unless otherwise noted
30 10

IR, REVERSE LEAKAGE CURRENT (mA)

IF, REVERSE LEAKAGE CURRENT (A)

10
TJ = 125oC
1
1

TJ = 125oC 0.1
0.1

0.01 TJ = 25oC 0.01

TJ = 25oC

1E-3 1E-3
0.0 0.4 0.8 1.2 1.6 2.0 0 5 10 15 20
VF, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)

Figure 13. Schottky Diode Forward Voltage Figure 14. Schottky Diode Reverse Current

2
1 DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL

D = 0.5
IMPEDANCE, ZθJA

0.2
0.1
0.05 PDM
0.1 0.02
0.01
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
0.01 PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
0.005
-4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION (s)

Figure 15. Transient Thermal Response Curve

FDFS2P753Z Rev.A 6 www.fairchildsemi.com

FAIRCHILD SEMICONDUCTOR TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FACT Quiet Series™ OCX™ SILENT SWITCHER® UniFET™
ActiveArray™ GlobalOptoisolator™ OCXPro™ SMART START™ UltraFET®
Bottomless™ GTO™ OPTOLOGIC® SPM™ VCX™
Build it Now™ HiSeC™ OPTOPLANAR™ Stealth™ Wire™
CoolFET™ I2C™ PACMAN™ SuperFET™
CROSSVOLT™ i-Lo™ POP™ SuperSOT™-3
DOME™ ImpliedDisconnect™ Power247™ SuperSOT™-6
EcoSPARK™ IntelliMAX™ PowerEdge™ SuperSOT™-8
E2CMOS™ ISOPLANAR™ PowerSaver™ SyncFET™
EnSigna™ LittleFET™ PowerTrench® TCM™
FACT® MICROCOUPLER™ QFET® TinyBoost™
FAST® MicroFET™ QS™ TinyBuck™
FASTr™ MicroPak™ QT Optoelectronics™ TinyPWM™
FPS™ MICROWIRE™ Quiet Series™ TinyPower™
FRFET™ MSX™ RapidConfigure™ TinyLogic®
MSXPro™ RapidConnect™ TINYOPTO™
Across the board. Around the world.™ µSerDes™ TruTranslation™
The Power Franchise® ScalarPump™ UHC®
Programmable Active Droop™

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:
1. Life support devices or systems are devices or systems which, 2. A critical component is any component of a life support device or
(a) are intended for surgical implant into the body, or (b) support or system whose failure to perform can be reasonably expected to
sustain life, or (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its
accordance with instructions for use provided in the labeling, can be safety or effectiveness.
reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I21