PD - 93763

IRF7326D2
FETKY MOSFET / Schottky Diode
● Co-packaged HEXFET® Power MOSFET
and Schottky Diode A
1 8
K VDSS = -30V
● Ideal For Buck Regulator Applications A 2 7
K
● P-Channel HEXFET 3 6 RDS(on) = 0.10Ω
S D
● Low VF Schottky Rectifier 4 5
G D
● Generation 5 Technology Schottky Vf = 0.52V
● SO-8 Footprint Top Vie w

Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable S O -8
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current ➃ -3.6 A
ID @ TA = 70°C -2.9
IDM Pulsed Drain Current ➀ -29
PD @TA = 25°C Power Dissipation ➃ 2.0 W
PD @TA = 70°C 1.3
Linear Derating Factor 16 mW/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt ➁ -5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance Ratings
Parameter Maximum Units
RθJA Junction-to-Ambient ➃ 62.5 °C/W

Notes:
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
➁ ISD ≤ -1.8A, di/dt ≤ -90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
➂ Pulse width ≤ 300µs; duty cycle ≤ 2%
➃ Surface mounted on FR-4 board, t ≤ 10sec.

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MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 — — V V GS = 0V, ID = -250µA
RDS(on) Static Drain-to-Source On-Resistance — 0.073 0.10 VGS = -10V, ID = -1.8A ƒ
Ω
— 0.13 0.16 VGS = -4.5V, ID = -1.5A ƒ
VGS(th) Gate Threshold Voltage -1.0 — — V VDS = VGS, ID = -250µA
gfs Forward Transconductance 2.5 — — S VDS = -24V, ID = -1.8A
IDSS Drain-to-Source Leakage Current — — -1.0 VDS = -24V, VGS = 0V
µA
— — -25 VDS = -24V, VGS = 0V, TJ = 55°C
IGSS Gate-to-Source Forward Leakage — — 100 VGS = -20V
nA
Gate-to-Source Reverse Leakage — — -100 V GS = 20V
Qg Total Gate Charge — — 25 ID = -1.8A
Qgs Gate-to-Source Charge — — 2.9 nC VDS = -24V
Qgd Gate-to-Drain ("Miller") Charge — — 9.0 VGS = -10V (see figure 6) ➂
td(on) Turn-On Delay Time — 11 — VDD = -15V
tr Rise Time — 17 — ID = -1.8A
ns
td(off) Turn-Off Delay Time — 25 — RG = 6.0Ω
tf Fall Time — 18 — R D = 8.2Ω ➂
Ciss Input Capacitance — 440 — VGS = 0V
Coss Output Capacitance — 200 — pF VDS = -25V
Crss Reverse Transfer Capacitance — 93 — ƒ = 1.0MHz (see figure 5)

MOSFET Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current (Body Diode) — — -2.5 A
ISM Pulsed Source Current (Body Diode) — — -29
VSD Body Diode Forward Voltage — — -1.0 V TJ = 25°C, IS = -1.8A, VGS = 0V
trr Reverse Recovery Time (Body Diode) — 53 80 ns TJ = 25°C, IF = -1.8A
Qrr Reverse Recovery Charge — 66 99 nC di/dt = 100A/µs ➂
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
If (av) Max. Average Forward Current 2.8 50% Duty Cycle. Rectangular Wave, Tc = 25°C
A
1.8 50% Duty Cycle. Rectangular Wave, Tc = 70°C
ISM Max. peak one cycle Non-repetitive 200 5µs sine or 3µs Rect. pulse Following any rated
Surge current 20 A 10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
Vfm Max. Forward voltage drop 0.57 If = 3.0, Tj = 25°C
0.77 If = 6.0, Tj = 25°C
V
0.52 If = 3.0, Tj = 125°C
0.79 If = 6.0, Tj = 125°C .
Irm Max. Reverse Leakage current 0.30 Vr = 30V Tj = 25°C
mA
37 Tj = 125°C
Ct Max. Junction Capacitance 310 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 4900 V/µs Rated Vr
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
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 IRF7326D2

Power Mosfet Characteristics

100 100
VGS VGS
TOP - 15V TOP - 15V
- 10V - 10V
- 8.0V - 8.0V
- 7.0V - 7.0V
-ID , D rain-to-S ource C urrent (A )

-I D , D rain-to-S ource C urrent (A)

- 6.0V - 6.0V
- 5.5V - 5.5V
- 5.0V - 5.0V
BOTTOM - 4.5V BOTTOM - 4.5V

10 -4.5V 10
-4.5V

2 0µ s P U L S E W ID TH 2 0µ s P U L S E W ID TH
TJ = 25 °C A T J = 15 0°C
1 1 A
0.1 1 10 100 0.1 1 10 100
-VD S , D rain-to-S ource V oltage (V ) -V D S , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.0
I D = -3 .0A
R D S (o n) , D rain-to -S ource O n R e sistance
-I D , D ra in -to-Sou rce C urrent (A )

TJ = 2 5 °C
1.5
T J = 1 5 0°C
(N orm alized)

10 1.0

0.5

V D S = -1 5 V
2 0µ s P U L S E W ID TH VG S = -1 0V
1 0.0
A A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160
-V G S , G ate -to-Source Volta ge (V) T J , Junction T em perature (°C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRF7326D2
Power Mosfet Characteristics

1000 20
V GS = 0V , f = 1M H z I D = -3.0A
C iss = Cg s + C gd , Cds S H O R TE D V D S = -24 V

-V G S , G a te-to-S ou rc e V o ltag e (V )
C rs s = C gd
800 C oss = C ds + C gd 16
C , C apacitanc e (pF )

600 C iss 12

C o ss
400 8

200 C rss 4

FO R TE S T C IR C U IT
S E E FIG U R E 12
0 A 0 A
1 10 100 0 5 10 15 20 25
-VD S , Drain -to -S ource V oltage (V ) Q G , Total G ate C harge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-I S D , Reverse D ra in Cu rre nt (A )

-II D , Drain Current (A)

10

TJ = 1 5 0°C 100us
10
TJ = 25 °C
1
1ms

TC = 25 °C
TJ = 150 °C
10ms
VG S = 0 V Single Pulse
0.1 A 1
0.0 0.3 0.6 0.9 1.2 1.5 1 10 100
-VS D , S ource-to-D rain Vo ltage (V ) -VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRF7326D2
Power Mosfet Characteristics

100

D = 0.50
Thermal Response (Z thJA )

0.20
10
0.10

0.05

0.02
P DM
0.01
1
SINGLE PULSE t1
(THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

0.50
R DS (on), Drain-to-Source On Resistance ( Ω )

R DS (on), Drain-to-Source On Resistance ( Ω )

0.14

0.40
0.12

0.30

VGS = -4.5V 0.10

0.20 ID = -3.6A

VGS = -10V 0.08

0.10

0.00 0.06
0 2 4 6 8 10 12 14 4 6 8 10 12 14 16
-I D , Drain Current (A) -VGS , Gate-to-Source Voltage (V)

Fig 10. Typical On-Resistance Vs. Drain Fig 11. Typical On-Resistance Vs. Gate
Current Voltage
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IRF7326D2

Schottky Diode Characteristics

100 100

T J = 150°C
10
125°C

Reverse Current - IR (mA)

100°C
1
75°C

0.1 50°C
In sta n ta n e ou s Fo rw a rd Cu rren t - I F (A )

10 25°C
0.01

T J = 1 50 °C
0.001
A
T J = 1 25 °C 0 5 10 15 20 25 30

T J = 2 5 °C Reverse Voltage - V R (V)

Fig. 13 - Typical Values of

Reverse Current Vs. Reverse
1 Voltage
A llow ab le A m bient Tem pe ra ture - (°C )

160
V r = 8 0 % R ated
R t hJA = 6 2.5° C /W
140 Sq uare wave

120

100
DC
80

0.1
60
0.0 0.2 0.4 0.6 0.8 1.0
D = 3/4
( ) 40 D = 1/2
Forward Voltage Drop - VF (V) D =1 /3
D = 1/4
20
D = 1/5
A
Fig. 12 - Typical Forward Voltage Drop 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Characteristics
Av era ge F orw ard C urrent - I F(AV ) (A )

Fig.14 - Maximum Allowable Ambient

Temp. Vs. Forward Current

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 IRF7326D2

SO-8 Package Details

IN C H E S M IL LIM E T E R S
D D IM
5
M IN MAX M IN M AX
-B -
θ A .0532 .0688 1 .35 1 .75
A1 .0040 .0098 0 .10 0 .25
8 7 6 5
5 B .014 .018 0 .36 0 .46
E H
-A - 0.2 5 (.0 10 ) M A M C .0 075 .0 098 0 .19 0.25
1 2 3 4
D .1 89 .1 96 4 .80 4.98
E .150 .157 3 .81 3 .99
e e .050 B A S IC 1.2 7 B A S IC
6X θ K x 45 °
e1 e1 .025 B A S IC 0.6 35 B A S IC
H .2 284 .2 440 5 .80 6.20
A
K .011 .019 0 .28 0 .48
-C- 0 .10 (.00 4) L 6 C
A1 L 0 .16 .050 0 .41 1.27
B 8X 8X 8X
θ 0° 8° 0° 8°
0 .25 (.01 0) M C A S B S
R E CO M M E ND E D F O O TP R IN T
N O TE S :
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 0 .72 (.02 8 )
8X
2 . C O N TRO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
6 .46 ( .25 5 ) 1 .78 (.07 0)
5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S 8X
M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6).
6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
1.27 ( .0 50 )
3X

Part Marking
(IRF7101 example ) D A T E C O D E (Y W W )
Y = L A S T D IG IT O F T H E Y E A R
a
W W = W EEK

312
IN T E R N A T IO N A L F 7 10 1
R E C T IF IE R
L OG O PART NUM BER
TOP

XX X X
W AFER
L OT C ODE
(L A S T 4 D IG IT S ) BOTTOM

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IRF7326D2
T E R M IN A L N U M B E R 1
Tape and Reel

12 .3 ( .484 )
11 .7 ( .461 )

8.1 ( .31 8 )
7.9 ( .31 2 ) F E E D D IR E C T IO N

N OTE S :
1 . C ON TR O LL IN G D IM E N S ION : M IL LIM E TE R.
2 . A L L D IM E N S ION S A RE S H O W N IN M IL L IM E TE R S (INC H E S ).
3 . O U TL IN E C O N FO R M S TO E IA -4 81 & E IA -54 1 .

33 0.00
(12 .992 )
M AX .

14.4 0 ( .5 66 )
12.4 0 ( .4 88 )
NOTES :
1. C O N T R O LLIN G D IM E N S IO N : M ILL IM E T E R .
2. O U T LIN E C O N F O R M S T O E IA -481 & E IA -541.

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http://www.irf.com/ Data and specifications subject to change without notice. 8/99
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