PD- 91100D
IRF7201
HEXFET® Power MOSFET
l Generation V Technology A
A
1 8
l Ultra Low On-Resistance S D
l N-Channel MOSFET 2 7
VDSS = 30V
S D
l Surface Mount 3 6
S D
l Available in Tape & Reel
4
l Dynamic dv/dt Rating G 5
D RDS(on) = 0.030Ω
l Fast Switching
Description Top View
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically SO-8
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain- Source Voltage 30 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 7.3
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 5.8 A
IDM Pulsed Drain Current 58
PD @TC = 25°C Power Dissipation 2.5
W
PD @TC = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage ± 20 V
VGSM Gate-to-Source Voltage Single Pulse tp<10µs 30 V
EAS Single Pulse Avalanche Energy 70 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient
––– 50 °C/W
www.irf.com 1
08/15/03
IRF7201
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.030 VGS = 10V, ID = 7.3A
RDS(on) Static Drain-to-Source On-Resistance Ω
––– ––– 0.050 VGS = 4.5V, ID = 3.7A
VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs Forward Transconductance 5.8 ––– ––– S VDS = 15V, ID = 2.3A
––– ––– 1.0 VDS = 24V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 25 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
Qg Total Gate Charge ––– 19 28 ID = 4.6A
Qgs Gate-to-Source Charge ––– 2.3 3.5 nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge ––– 6.3 9.5 VGS = 10V, See Fig. 10
td(on) Turn-On Delay Time ––– 7.0 ––– VDD = 15V
tr Rise Time ––– 35 ––– ID = 4.6A
ns
td(off) Turn-Off Delay Time ––– 21 ––– RG = 6.2Ω
tf Fall Time ––– 19 ––– RD = 3.2Ω,
Ciss Input Capacitance ––– 550 ––– VGS = 0V
Coss Output Capacitance ––– 260 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D
2.5
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
58
(Body Diode) p-n junction diode. S
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 4.6A, VGS = 0V
trr Reverse Recovery Time ––– 48 73 ns TJ = 25°C, IF = 4.6A
Qrr Reverse RecoveryCharge ––– 73 110 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by ISD ≤ 4.6A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. (See fig. 11) TJ ≤ 150°C
VDD = 15V, starting TJ = 25°C, L = 6.6mH Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 4.6A. (See Figure 8)
When mounted on 1 inch square copper board, t<10 sec
2 www.irf.com
IRF7201
100 100
VGS VGS
TOP 15V TOP 15V
10V 10V
7.0V 7.0V
5.5V 5.5V
4.5V 4.5V
I D , Drain-to-Source Current (A)
I D, Drain-to-Source Current (A)
4.0V 4.0V
3.5V 3.5V
BOTTOM 3.0V BOTTOM 3.0V
10 10
3.0V
3.0V
20µs PULSE WIDTH 20µs PULSE WIDTH
TJ = 25°C A TJ = 150°C
1 1 A
0.1 1 10 0.1 1 10
V DS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
100 100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)
TJ = 25°C
10
TJ = 150°C
TJ = 150°C
10
TJ = 25°C
V DS = 10V
20µs PULSE WIDTH VGS = 0V
1 0.1 A
A 0.4 0.6 0.8 1.0 1.2
3.0 3.5 4.0 4.5 5.0 5.5
VGS , Gate-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V)
Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode
Forward Voltage
www.irf.com 3
IRF7201
R DS(on) , Drain-to-Source On Resistance (Ω)
2.0 0.20
I D = 4.6A
R DS(on) , Drain-to-Source On Resistance
1.5 0.15
(Normalized)
1.0 0.10
VGS = 4.5V
0.5 0.05
VGS = 10V
VGS = 10V
0.0 A 0.00 A
-60 -40 -20 0 20 40 60 80 100 120 140 160 0 10 20 30 40
TJ , Junction Temperature (°C) I D , Drain Current (A)
Fig 5. Normalized On-Resistance Fig 6. On-Resistance Vs. Drain Current
Vs. Temperature
0.05 200
ID
E AS , Single Pulse Avalanche Energy (mJ)
R DS(on) , Drain-to-Source On Resistance (Ω)
TOP 2.1A
3.7A
160 BOTTOM 4.6A
0.04
120
80
0.03
I D = 7.3A
40
0.02 A 0 A
2 4 6 8 10 12 14 16 25 50 75 100 125 150
Starting T J , Junction Temperature (°C)
V GS , Gate-to-Source Voltage (V)
Fig 7. On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy
Vs. Drain Current
4 www.irf.com
IRF7201
1000 20
V GS = 0V, f = 1MHz I D = 4.6A
C iss = Cgs + C gd , Cds SHORTED V DS = 24V
V GS , Gate-to-Source Voltage (V)
C rss = C gd V DS = 15V
800 C oss = C ds + C gd 16
C, Capacitance (pF)
Ciss
600 12
Coss
400 8
200 Crss 4
0 A 0 A
1 10 100 0 5 10 15 20 25 30
VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs. Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage
100
Thermal Response (Z thJA )
D = 0.50
10 0.20
0.10
0.05
PDM
0.02
1
t1
0.01
t2
Notes:
SINGLE PULSE 1. Duty factor D = t 1 / t 2
(THERMAL RESPONSE)
2. Peak T J = P DM x Z thJA + TA
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com 5
IRF7201
SO-8 Package Details
INCHES MILLIMETERS
D DIM
5 MIN MAX MIN MAX
-B-
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
8 7 6 5
5 B .014 .018 0.36 0.46
E H
-A- 0.25 (.010) M A M C .0075 .0098 0.19 0.25
1 2 3 4
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e e .050 BASIC 1.27 BASIC
6X θ K x 45°
e1 e1 .025 BASIC 0.635 BASIC
θ
H .2284 .2440 5.80 6.20
A
K .011 .019 0.28 0.48
-C- 0.10 (.004) L 6 C
A1 L 0.16 .050 0.41 1.27
B 8X 8X 8X
θ 0° 8° 0° 8°
0.25 (.010) M C A S B S
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 0.72 (.028 )
8X
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 ) 1.78 (.070)
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X
SO-8 Part Marking
6 www.irf.com
IRF7201
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/03
www.irf.com 7
