PD - 9.

1244C

IRF7401
HEXFET® Power MOSFET
l Generation V Technology A
A
l Ultra Low On-Resistance S
1 8
D
VDSS = 20V
l N-Channel Mosfet S
2 7
D
l Surface Mount 3 6
S D
l Available in Tape & Reel
l Dynamic dv/dt Rating G
4 5
D RDS(on) = 0.022Ω
l Fast Switching T o p V ie w
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.

The SO-8 has been modified through a customized S O -8

leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ 4.5V 10
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 8.7
A
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 7.0
IDM Pulsed Drain Current  35
PD @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt ‚ 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance Ratings

Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient„ ––– 50 °C/W

02/13/01
IRF7401
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.044 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.022 VGS = 4.5V, ID = 4.1A ƒ
RDS(ON) Static Drain-to-Source On-Resistance Ω
––– ––– 0.030 VGS = 2.7V, ID = 3.5A ƒ
VGS(th) Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA
gfs Forward Transconductance 11 ––– ––– S VDS = 15V, ID = 4.1A
––– ––– 1.0 VDS = 16V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 125 °C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
Qg Total Gate Charge ––– ––– 48 ID = 4.1A
Qgs Gate-to-Source Charge ––– ––– 5.1 nC VDS = 16V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 20 VGS = 4.5V, See Fig. 6 and 12 ƒ
td(on) Turn-On Delay Time ––– 13 ––– VDD = 10V
tr Rise Time ––– 72 ––– ID = 4.1A
ns
td(off) Turn-Off Delay Time ––– 65 ––– RG = 6.0Ω
tf Fall Time ––– 92 ––– RD = 2.4Ω, See Fig. 10 ƒ
D
LD Internal Drain Inductance ––– 2.5 –––
Between lead tip
nH G
and center of die contact
LS Internal Source Inductance ––– 4.0 –––
S

Ciss Input Capacitance ––– 1600 ––– VGS = 0V

Coss Output Capacitance ––– 690 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 310 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– 3.1

(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 35
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 2.0A, VGS = 0V ƒ
trr Reverse Recovery Time ––– 39 59 ns TJ = 25°C, IF = 4.1A
Qrr Reverse RecoveryCharge ––– 42 63 nC di/dt = 100A/µs ƒ
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )

‚ ISD ≤ 4.1A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, „ Surface mounted on FR-4 board, t ≤ 10sec.
TJ ≤ 150°C
 IRF7401

1000 VGS 1000 VGS

TO P 7.5V TO P 7.5V
5.0V 5.0V
4.0V 4.0V
3.5V 3.5V
I , D rain-to-S ou rc e C urre nt (A )

I , D ra in-to-S o urc e C u rre nt (A )

3.0V 3.0V
2.5V 2.5V
2.0V 2.0V
BOT TOM 1.5V BOT TOM 1.5V
100 100

10 10

1.5V
D

D
1 .5V
20 µ s P U LS E W ID TH 20 µ s P U LS E W ID TH
TA = 2 5°C A TJ = 1 50 °C
1 1 A
0.1 1 10 100 0.1 1 10 100
V D S , D rain-to-S ourc e V oltage (V ) V D S , D rain-to-S ourc e V oltage (V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.0
I D = 6.9A
R D S(on ) , D rain-to-S ourc e O n R esis tanc e
I D , D rain-to -So urce C urre nt (A )

1.5
TJ = 2 5°C
100
(Norm alized)

TJ = 1 50 °C
1.0

10

0.5

V DS = 15V
2 0 µ s P UL S E W ID TH V G S = 4.5V
1 0.0
A A
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
V G S , G ate-to -So urce Vo ltag e (V) T J , Junction T em perature (°C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRF7401

3000 10
V GS = 0V, f = 1M H z I D = 4 .1 A
C is s = C g s + C gd , C ds S H O R T E D VD S = 1 6V

V G S , G ate-to-S ource V oltage (V )

C rss = C gd
2500
C oss = C ds + C gd 8
C , Capacitance (pF)

C iss
2000
6

1500
C o ss
4
1000

C rss 2
500

FO R TE S T C IR C U IT
S E E FIG U R E 1 2
0 A 0 A
1 10 100 0 10 20 30 40 50
V D S , D rain-to-S ourc e V oltage (V ) Q G , T otal G ate C harge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I S D , R everse Drain C urrent (A )

TJ = 25 °C
100us
TJ = 15 0°C
I D , Drain Current (A)

10

10 1ms

10ms

TA = 25 ° C
TJ = 150 ° C
VG S = 0 V Single Pulse
0.1 A 1
0.0 1.0 2.0 3.0 4.0 0.1 1 10 100

V S D , S ourc e-to-D rain V oltage (V ) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRF7401

10.0
RD
VDS

VGS
8.0 D.U.T.
RG
I D , Drain Current (A)

+
- VDD
6.0
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0

Fig 10a. Switching Time Test Circuit

2.0
VDS
90%
0.0
25 50 75 100 125 150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Ambient Temperature
Fig 10b. Switching Time Waveforms

100
Thermal Response (Z thJA )

D = 0.50

10 0.20

0.10


0.05

0.02 P DM
1
0.01 t1

SINGLE PULSE t2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7401

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

+
4.5V V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit
 IRF7401
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-

 **
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D"
*
VDD
-
• D.U.T. - Device Under Test
VGS*

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 13. For N-Channel HEXFETS
IRF7401

Package Outline
SO-8 Outline
Dimensions are shown in millimeters (inches)
INCHES MILLIMETERS
D DIM
5 MIN MAX MIN MAX
-B-
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
8 7 6 5
5 B .014 .018 0.36 0.46
E H
-A- 0.25 (.010) M A M C .0075 .0098 0.19 0.25
1 2 3 4
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e e .050 BASIC 1.27 BASIC
K x 45°
6X
e1 e1 .025 BASIC 0.635 BASIC
θ
A H .2284 .2440 5.80 6.20

-C- K .011 .019 0.28 0.48

0.10 (.004) L 6 C
B 8X
A1 8X 8X L 0.16 .050 0.41 1.27
0.25 (.010) M C A S B S θ 0° 8° 0° 8°
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 0.72 (.028 )
8X
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 ) 1.78 (.070)
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X

Part Marking Information

SO-8

EXAM PLE : TH IS IS AN IR F7 101

D ATE C O DE (YW W )
Y = LAST D IGIT O F TH E YEAR
W W = W EEK
31 2
IN TER N ATIO N AL XXXX
F710 1
R EC TIF IER W AFER
LO G O LO T C O D E
PAR T N UM BER
TOP (LAST 4 D IG ITS) BO TTO M
 IRF7401

Tape & Reel Information

SO-8
Dimensions are shown in millimeters (inches)

4.1 0 (.1 61 ) 1.85 (.07 2)

3.9 0 (.1 54 ) 1.65 (.06 5) 0 .35 (.01 3)
1.60 (.0 62 ) 0 .25 (.01 0)
T E R M IN AT IO N 2.0 5 (.08 0 )
1.9 5 (.07 7 ) 1.50 (.0 59 )
N U MBER 1

5 .55 (.2 18 )
1 5 .45 (.2 15 ) 1 2.30 (.48 4 )
5 .3 0 (.2 08 ) 1 1.70 (.46 1 )
5 .1 0 (.2 01 )

8.10 (.3 18 ) 2.6 0 (.1 02 )

F E E D D IR E C T IO N 7.90 (.3 11 ) 1.5 0 (.0 59 )
2. 20 (.0 8 6)
6 .5 0 (.25 5)
2. 00 (.0 7 9)
6 .3 0 (.24 8)

13 .2 0 (.51 9) 1 5.40 (.60 7)

12 .8 0 (.50 4) 1 1.90 (.46 9)
2

33 0. 00 5 0.0 0
(13 .00 0) (1.9 69 )
MAX. M IN .

18 .4 0 (.7 24 )
NO TES: MAX 3
1 C O N FO R M S T O E IA -48 1-1 1 4. 40 (.5 66 )
1 2. 40 (.4 48 )
2 IN C LU D E S F LA N G E D IS T O R TIO N @ O U T E R E D G E
3
3 D IM E N S IO N S M E A S U R E D @ H U B
4 C O N TR O LL IN G D IM E N S IO N : M E T R IC

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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http://www.irf.com/ Data and specifications subject to change without notice. 8/97