PD - 9.

1242B

IRF7307
HEXFET® Power MOSFET
l Generation V Technology
N -C H AN N EL M O SF ET
l Ultra Low On-Resistance S1
1 8
D1 N-Ch P-Ch
l Dual N and P Channel Mosfet G1
2 7
D1
l Surface Mount 3 6
S2 D2 VDSS 20V -20V
l Available in Tape & Reel
4 5
G2 D2
l Dynamic dv/dt Rating P-C H AN N E L M OS FE T

l Fast Switching T op V iew RDS(on) 0.050Ω 0.090Ω

Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and S O -8
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.

Absolute Maximum Ratings

Max.
Parameter Units
N-Channel P-Channel
ID @ TA = 25°C 10 Sec. Pulse Drain Current, VGS @ 4.5V 5.7 -4.7
ID @ TA = 25°C Continuous Drain Current, V GS @ 4.5V 5.2 -4.3 A
ID @ TA = 70°C Continuous Drain Current, V GS @ 4.5V 4.1 -3.4
IDM Pulsed Drain Current  21 -17
PD @TA = 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt ‚ 5.0 -5.0 V/ns
TJ,TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance Ratings

Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient„ ––– 62.5 °C/W

8/25/97
IRF7307
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch 20 — — VGS = 0V, I D = 250µA
P-Ch -20 — — V VGS = 0V, ID = -250µA
N-Ch — 0.044 — Reference to 25°C, ID = 1mA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V/°C
P-Ch — -0.012 — Reference to 25°C, ID = -1mA
— — 0.050 VGS = 4.5V, ID = 2.6A ƒ
N-Ch
— — 0.070 VGS = 2.7V, ID = 2.2A ƒ
RDS(ON) Static Drain-to-Source On-Resistance
— — 0.090 Ω VGS = -4.5V, I D = -2.2A ƒ
P-Ch
— — 0.140 VGS = -2.7V, I D = -1.8A ƒ
N-Ch 0.70 — — VDS = VGS, ID = 250µA
V GS(th) Gate Threshold Voltage V
P-Ch -0.70 — — VDS = VGS, ID = -250µA
N-Ch 8.30 — — VDS = 15V, ID = 2.6A ƒ
gfs Forward Transconductance S
P-Ch 4.00 — — VDS = -15V, ID = -2.2A ƒ
N-Ch — — 1.0 VDS = 16V, V GS = 0V
P-Ch — — -1.0 VDS = -16V, VGS = 0V,
IDSS Drain-to-Source Leakage Current µA
N-Ch — — 25 VDS = 16V, VGS = 0V, TJ = 125°C
P-Ch — — -25 VDS = -16V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ± 12V
N-Ch — — 20
Qg Total Gate Charge N-Channel
P-Ch — — 22
N-Ch — — 2.2 ID = 2.6A, VDS = 16V, V GS = 4.5V
Qgs Gate-to-Source Charge
P-Ch — — 3.3 nC ƒ
P-Channel
N-Ch — — 8.0
Qgd Gate-to-Drain ("Miller") Charge ID = -2.2A, VDS = -16V, VGS = -4.5V
P-Ch — — 9.0
N-Ch — 9.0 —
td(on) Turn-On Delay Time N-Channel
P-Ch — 8.4 —
N-Ch — 42 — VDD = 10V, ID = 2.6A, RG = 6.0Ω,
tr Rise Time RD = 3.8Ω
P-Ch — 26 —
N-Ch — 32 — ns ƒ
td(off) Turn-Off Delay Time P-Channel
P-Ch — 51 —
N-Ch — 51 — VDD = -10V, ID = -2.2A, RG = 6.0Ω,
tf Fall Time RD = 4.5Ω
P-Ch — 33 —
LD Internal Drain Inductace N-P — 4.0 — Between lead tip
LS Internal Source Inductance N-P — 6.0 — nH and center of die contact
N-Ch — 660 —
Ciss Input Capacitance N-Channel
P-Ch — 610 —
VGS = 0V, V DS = 15V, ƒ = 1.0MHz
N-Ch — 280 —
Coss Output Capacitance pF ƒ
P-Ch — 310 —
P-Channel
N-Ch — 140 —
Crss Reverse Transfer Capacitance VGS = 0V, V DS = -15V, ƒ = 1.0MHz
P-Ch — 170 —

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
N-Ch — — 2.5
IS Continuous Source Current (Body Diode) P-Ch — — -2.5
A
N-Ch — — 21
ISM Pulsed Source Current (Body Diode)  P-Ch — — -17
N-Ch — — 1.0 TJ = 25°C, IS = 1.8A, VGS = 0V ƒ
V SD Diode Forward Voltage V
P-Ch — — -1.0 TJ = 25°C, IS = -1.8A, VGS = 0V ƒ
N-Ch — 29 44 N-Channel
trr Reverse Recovery Time ns
P-Ch — 56 84 T J = 25°C, IF = 2.6A, di/dt = 100A/µs
N-Ch — 22 33
nC P-Channel ƒ
Qrr Reverse Recovery Charge P-Ch — 71 110 T J = 25°C, IF = -2.2A, di/dt = 100A/µs
ton Forward Turn-On Time N-P Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 23 )

‚ N-Channel ISD ≤ 2.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS , TJ ≤ 150°C „ Surface mounted on FR-4 board, t ≤ 10sec.
P-Channel ISD ≤ -2.2A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
 N-Channel
IRF7307
1000 1000 VGS
VGS
TOP 7.5V TOP 7.5V
5.0V 5.0V
4.0V 4.0V
3.5V 3.5V
I , Dr ain-to-Sou rce Cur rent ( A)

I , Drain- to-S ourc e C urrent ( A)

3.0V 3.0V
2.5V 2.5V
2.0V 2.0V
B OTTOM 1.5V B OTTOM 1.5V
100 100

10 10

D
D

1 .5V

1.5 V 20µ s P U LS E W ID T H 20 µs P U LS E W ID T H
T J = 25 °C A T J = 15 0° C A
1 1
0.1 1 10 100 0.1 1 10 100
V DS , D rain-to- So urc e V oltage (V ) V DS , D rain- to- So urc e V oltage (V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.0
I D = 4 .3A

R D S(on) , Dr ain- to-S ource O n Res istanc e

I D , D ra in -to -S ou rc e C ur r en t ( A )

TJ = 25 ° C
1.5
TJ = 1 50 ° C (Norm alized)

10 1.0

0.5

V D S = 1 5V
20 µ s PU LS E W ID T H V G S = 4.5 V
1 0.0 A
A
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
V GS , G a te - to -S o ur c e V olta ge (V ) TJ , J unction Tem perature (°C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
1200 10
V GS = 0V , f = 1M H z I D = 2 .6A
C is s = C g s + C g d , C d s SH O R T E D V D S = 16 V
V G S , G ate- to- Sour ce V oltage (V )

C rs s = C gd
C os s = C ds + C g d 8
900
C , Capac itanc e (pF)

C is s

600
C os s
4

300 C rs s
2

F O R TE S T C IR C U IT
S E E F I GU R E 11
0 A 0 A
1 10 100 0 5 10 15 20 25
V D S , Drain -to -S ourc e Voltage (V ) Q G , Tota l G ate C har ge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage
IRF7307 N-Channel

100 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I SD , R e v er s e D ra in C u rre n t (A )

I D, Drain Current (A)

10 100us

TJ = 150° C 10

1ms
TJ = 25°C
1

TA = 25 °C 10ms
TJ = 150 °C
Single Pulse
V G S = 0V 1
0.1 A 0.1 1 10 100
0.0 0.5 1.0 1.5 2.0 2.5
VDS, Drain-to-Source Voltage (V)
V SD , Sour ce-to-Dr ain Voltage ( V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
RD
6.0 VDS

5.0 VGS
D.U.T.
RG
ID , Drain Current (A)

4.0 +
V
- DD

3.0
4.5V
Pulse Width ≤ 1 µs
2.0 Duty Factor ≤ 0.1 %

1.0
Fig 10a. Switching Time Test Circuit
0.0
25 50 75 100 125 150
VDS
TC , Case Temperature ( °C)
90%

Fig 9. Maximum Drain Current Vs.

Ambient Temperature
Current Regulator 10%
Same Type as D.U.T.
VGS
td(on) tr t d(off) tf
50KΩ

12V .2µF Fig 10b. Switching Time Waveforms

.3µF

+
V
D.U.T. - DS QG
4.5V
VGS QGS QGD

3mA
VG

IG ID
Current Sampling Resistors
Charge

Fig 11a. Gate Charge Test Circuit Fig 11b. Basic Gate Charge Waveform
 P-Channel
IRF7307
100 100
VGS VGS
TOP - 7.5V TOP - 7.5V
- 5.0V - 5. 0V
- 4.0V - 4. 0V
- 3.5V - 3. 5V
-I D , Drain- to-S ourc e Current (A )

- ID , Dr ain- to-S ource Current (A)

- 3.0V - 3. 0V
- 2.5V - 2. 5V
- 2.0V - 2. 0V
B OTTOM - 1.5 V BOTTOM - 1. 5V
10 10

1 1
-1.5V

-1.5 V

20µ s P U LS E W ID T H 20µ s PU L SE W ID T H
TJ = 25 °C T J = 150° C
0.1 A 0.1 A
0.01 0.1 1 10 100 0.01 0.1 1 10 100
-V DS , Dra in-to-S ourc e Vo ltage ( V) -VDS , D rain-to-S ourc e Voltage (V)

Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics

100 2.0
I D = -3. 6A

R DS(on) , Drain- to- Sour ce O n R esis tanc e

- I D , D r ai n- to- S ou rc e C u r re n t ( A )

1.5
TJ = 2 5 °C TJ = 1 5 0 °C
10
(Nor malized)

1.0

1
0.5

V D S = - 15 V
2 0µ s P U L S E W ID T H V G S = -4 .5V
0.1 0.0 A
A -60 -40 -20 0 20 40 60 80 100 120 140 160
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

-VG S , G a te -to -S ou rc e V olta ge (V ) T J , J unc tion Tem per ature (°C )

Fig 14. Typical Transfer Characteristics Fig 15. Normalized On-Resistance

Vs. Temperature
1500 10
V GS = 0V, f = 1 MHz I D = -2.2A
C is s = C g s + C g d , Cd s S H O R T E D V D S = -16 V
C rs s = C gd
-V GS , G a t e-t o -S ou rc e V o lt a ge (V )

C os s = C d s + C gd
8

C is s
C, C apacitance (pF)

1000
6
Co s s

C rs s 4
500

FO R TE ST C IR C U IT
SE E F IG U R E 2 2
0 0 A
A
1 10 100 0 5 10 15 20 25

-V D S , Drain- to -So urc e V oltage ( V) Q G , Total G ate Charge ( nC)

Fig 16. Typical Capacitance Vs. Fig 17. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage
IRF7307 P-Channel

100 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-I SD , R e v e rs e D ra in C u rre n t (A )

-II D, Drain Current (A)

10
T J = 150°C
TJ = 25° C
10

1ms

TA = 25 °C 10ms
TJ = 150 °C
Single Pulse
VG S = 0 V 1
0.1 A 1 10 100
0.3 0.6 0.9 1.2 1.5
-V DS, Drain-to-Source Voltage (V)
- VSD , Sour ce-to-Drain V oltage (V)

Fig 18. Typical Source-Drain Diode Fig 19. Maximum Safe Operating Area
Forward Voltage RD
5.0 VDS

VGS
4.0 D.U.T.
RG -
+ VDD
-I D, Drain Current (A)

3.0

-4.5V
2.0 Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

1.0
Fig 21a. Switching Time Test Circuit
0.0
25 50 75 100 125 150
VDS
T C, Case Temperature ( °C)
90%
Fig 20. Maximum Drain Current Vs.
Ambient Temperature
Current Regulator 10%
Same Type as D.U.T.
VGS
td(on) tr t d(off) tf
50KΩ

12V .2µF Fig 21b. Switching Time Waveforms

.3µF
-

D.U.T. +VDS QG
-4.5V
VGS QGS QGD

-3mA
VG

IG ID
Current Sampling Resistors
Charge

Fig 22a. Gate Charge Test Circuit Fig 22b. Basic Gate Charge Waveform
 N & P-Channel
IRF7307
100

D = 0.50
(Z thJA )

0.20
10
0.10
Thermal Response

0.05

0.02
PDM
0.01
1
SINGLE PULSE t1
(THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7307
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-

 **
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" *
VDD
-
• D.U.T. - Device Under Test
VGS*

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[ VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ ISD]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 24. For N and P Channel HEXFETS

 IRF7307

Package Outline
SO-8 Outline
Dimensions are shown in millimeters (inches)

INCHES MILLIMETERS
D DIM
5 MIN MAX MIN MAX
-B-
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
8 7 6 5
5 B .014 .018 0.36 0.46
E H
-A- 0.25 (.010) M A M C .0075 .0098 0.19 0.25
1 2 3 4
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e e .050 BASIC 1.27 BASIC
K x 45°
6X e1 e1 .025 BASIC 0.635 BASIC
θ
A
H .2284 .2440 5.80 6.20

-C-
K .011 .019 0.28 0.48
0.10 (.004) L 6 C
B 8X A1 8X 8X L 0.16 .050 0.41 1.27

0.25 (.010) M C A S B S θ 0° 8° 0° 8°
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 0.72 (.028 )
8X
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 ) 1.78 (.070)
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X

Part Marking Information

SO-8

E X A M P LE : TH IS IS A N IR F 7 101

D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W EEK
3 12
IN T E R N A TI ON A L XX X X
F 7 101
R E C T IF IE R W AFER
LO G O LO T C O D E
PART NUMBER
T OP (LA S T 4 D IG IT S ) B O T TO M
IRF7307
Tape & Reel Information
SO-8
Dimensions are shown in millimeters (inches)

4.10 (.161) 1.85 (.072)

3.90 (.154) 1.65 (.065) 0.35 ( .013)
0.25 ( .010)
2.0 5 (.08 0) 1.60 ( .062)
T ERM INAT IO N
1.9 5 (.07 7) 1.50 ( .059)
N UM BE R 1

5.55 (.218)
1 5.45 (.215) 12.30 (.484)
5.30 (.208) 11.70 (.461)
5.10 (.201)

8.10 ( .318) 2.60 (.102)

F EE D DIR ECT IO N 1.50 (.059)
7.90 ( .311)
2.20 (.086)
6.50 ( .255)
2.00 (.079)
6.30 ( .248)

13.20 (.519) 15.40 (.607)

12.80 (.504) 11.90 (.469)

330.00 50.0 0
( 13.000) (1.969)
MAX . MIN.

18.40 (.724)
NO TE S: M AX 3
1 C ON FO RM S T O E IA- 481- 1 14.40 ( .566)
12.40 ( .448)
2 INCLUDES F LANG E DIST O RT IO N @ OU TE R E DGE 3
3 D IME NS IO NS MEA SURE D @ HUB
4 C ON TRO LLING DIME NSIO N : MET RIC

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http://www.irf.com/ Data and specifications subject to change without notice. 8/97