PD - 9.

1245B

PRELIMINARY IRF7403
HEXFET® Power MOSFET

l Generation V Technology
A
l Ultra Low On-Resistance 1 8
A
S D
l N-Channel Mosfet VDSS = 30V
2 7
l Surface Mount S D

l Available in Tape & Reel S

3 6
D
l Dynamic dv/dt Rating 4

l Fast Switching
G 5
D RDS(on) = 0.022Ω
T op V iew
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in S O -8
an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques. Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, V GS @ 10V 9.7
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 8.5
A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.4
IDM Pulsed Drain Current  34
PD @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage ±20 V
dv/dt Peak Diode Recovery dv/dt ‚ 5.0 V/ns
TJ,TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance Ratings

Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient„ ––– 50 °C/W

8/25/97
IRF7403

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.022 VGS = 10V, ID = 4.0A ƒ
RDS(ON) Static Drain-to-Source On-Resistance Ω
––– ––– 0.035 VGS = 4.5V, ID = 3.4A ƒ
VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, I D = 250µA
gfs Forward Transconductance 8.4 ––– ––– S VDS = 15V, ID = 4.0A
––– ––– 1.0 VDS = 24V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 25 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 57 ID = 4.0A
Qgs Gate-to-Source Charge ––– ––– 6.8 nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 18 V GS = 10V, See Fig. 6 and 12 ƒ
td(on) Turn-On Delay Time ––– 10 ––– VDD = 15V
tr Rise Time ––– 37 ––– ID = 4.0A
ns
td(off) Turn-Off Delay Time ––– 42 ––– RG = 6.0Ω
tf Fall Time ––– 40 ––– RD = 3.7Ω, See Fig. 10 ƒ
D
LD Internal Drain Inductance ––– 2.5 –––
Between lead tip
nH G
and center of die contact
LS Internal Source Inductance ––– 4.0 –––
S

Ciss Input Capacitance ––– 1200 ––– VGS = 0V

Coss Output Capacitance ––– 450 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 160 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– 3.1

(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 34
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 2.0A, VGS = 0V ƒ
t rr Reverse Recovery Time ––– 52 78 ns TJ = 25°C, IF = 4.0A
Qrr Reverse RecoveryCharge ––– 93 140 nC di/dt = 100A/µs ƒ
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )

‚ I SD ≤ 4.0A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS, „ Surface mounted on FR-4 board, t ≤ 10sec.
TJ ≤ 150°C
 IRF7403

1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8. 0V
7.0V 7. 0V
I , D ra in -to -S o u rce C u rre n t (A )

I , D ra in -to -S o u rce C u rre n t (A )

6.0V 6. 0V
5.5V 5. 5V
5.0V 5. 0V
BOTT OM 4.5V BOTT OM 4.5V
100 100

4.5V
4.5 V

10 10
D

D
20 µs P UL SE W ID TH 20µ s PU L SE W ID TH
TJ = 25°C TJ = 1 50 °C
1 A 1 A
0.01 0.1 1 10 100 0.01 0.1 1 10 100
V D S , Drain-to-Source V oltage (V ) V D S , Drain-to-S ource V oltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

2.0
1000 I D = 6.7 A
R D S (o n ) , D ra in -to -S o u rc e O n R e sis ta n c e
I D , Drain-to-Source Current (A)

1.5
TJ = 25 ° C
(N o rm a liz e d )

100 1.0
TJ = 150 ° C

0.5

V DS = 50V
15V
20µs PULSE WIDTH V G S = 10 V
10 0.0 A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T J , Junction T emperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
 IRF7403

2400 20
V GS = 0V, f = 1M H z I D = 4.0A
C iss = C gs + C gd , C ds SH O R TED VDS = 2 4V

V G S , G a te -to -S o u rc e V o lta g e (V )
C rss = C gd
2000 C oss = C ds + C gd 16
C , C a p a c ita n c e (p F )

C i ss
1600
12
C o ss
1200

8
800

C rs s 4
400

FO R TES T C IR CU IT
SEE FIG U RE 12
0 A 0 A
1 10 100 0 10 20 30 40 50 60
V D S , Drain-to-Source V oltage (V) Q G , Total Gate Charge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
IS D , R e ve rs e D ra in C u rre n t (A )

ID , Drain Current (A)

10 100us

TJ = 1 50 °C TJ = 25 °C 10

1ms
1

TA = 25 ° C 10ms
TJ = 150 ° C
VG S = 0 V Single Pulse
0.1 A 1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1 10 100
V S D , Source-to-Drain Voltage (V ) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRF7403

RD
VDS

VGS
10.0 D.U.T.
RG
+
- VDD
8.0
10 V
I D , Drain Current (A)

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6.0

Fig 10a. Switching Time Test Circuit

4.0
VDS
90%
2.0

0.0 10%
25 50 75 100 125 150
VGS
T C , Case Temperature ( ° C)
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Ambient Temperature

100
(Z thJA )

D = 0.50

10 0.20

0.10
Thermal Response

0.05

0.02 PDM
1
0.01 t1

SINGLE PULSE t2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7403

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

+
10 V V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit
 IRF7403

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-

 **
RG • dv/dt controlled by RG +
• I SD controlled by Duty Factor "D" *
VDD
-
• D.U.T. - Device Under Test
VGS*

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[ VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ ISD]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 13. For N-Channel HEXFETS
IRF7403

Package Outline
SO-8 Outline
Dimensions are shown in millimeters (inches)

INCHES MILLIMETERS
D DIM
5 MIN MAX MIN MAX
-B-
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
8 7 6 5
5 B .014 .018 0.36 0.46
E H
-A- 0.25 (.010) M A M C .0075 .0098 0.19 0.25
1 2 3 4
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e e .050 BASIC 1.27 BASIC
K x 45°
6X e1 e1 .025 BASIC 0.635 BASIC
θ
A H .2284 .2440 5.80 6.20

-C- K .011 .019 0.28 0.48

0.10 (.004) L 6 C
B 8X A1 8X 8X L 0.16 .050 0.41 1.27

0.25 (.010) M C A S B S θ 0° 8° 0° 8°
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 0.72 (.028 )
8X
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 ) 1.78 (.070)
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X

Part Marking Information

SO-8

E X A M P LE : TH IS IS A N IR F 7 101

D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W EEK
3 12
IN T E R N A TI ON A L XX X X
F 7 101
R E C T IF IE R W AFER
LO G O LO T C O D E
PART NUMBER
T OP (LA S T 4 D IG IT S ) B O T TO M
 IRF7403

Tape & Reel Information

SO-8
Dimensions are shown in millimeters (inches)

4 .1 0 (. 16 1) 1 .8 5 (. 07 2)
3 .9 0 (. 15 4) 1 .6 5 (. 06 5) 0 .35 (.0 13 )
0 .25 (.0 10 )
2 .0 5 (. 08 0) 1 .60 (. 06 2)
T E R M IN AT IO N
1 .9 5 (. 07 7) 1 .50 (. 05 9)
NU MB E R 1

5.5 5 (. 21 8)
1 5.4 5 (. 21 5) 12 .30 (.4 8 4)
5.3 0 (. 20 8) 11 .70 (.4 6 1)
5.1 0 (. 20 1)

8.1 0 (.31 8) 2.6 0 (.1 02 )

F E E D D IR EC T IO N 7.9 0 (.31 1) 1.5 0 (.0 59 )
2 .20 (.0 8 6)
6 .5 0 (.25 5)
2 .00 (.0 7 9)
6 .3 0 (.24 8)

1 3. 20 (.5 19 ) 1 5. 40 (.6 07 )
1 1. 90 (.4 69 )
1 2. 80 (.5 04 )
2

3 30 .00 50 .0 0
(13 .00 0) (1.9 69 )
MAX. M IN .

18 .4 0 (.72 4)
N O TE S : MAX 3
1 C O N F O R M S T O E IA-4 81 -1 1 4. 40 (.5 66 )
1 2. 40 (.4 48 )
2 IN C L U D ES F LA N G E D IS T O R T IO N @ O U T E R E D G E 3
3 D IM E N SIO N S M E AS U R E D @ H U B
4 C O N T R O L LIN G D IM EN S IO N : M E T R IC

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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http://www.irf.com/ Data and specifications subject to change without notice. 8/97