PD - 95196A

IRF7328PbF
HEXFET® Power MOSFET
lÿÿTrench Technology
VDSS RDS(on) max ID
lÿÿUltra Low On-Resistance
lÿ Dual P-Channel MOSFET -30V 21mΩ@VGS = -10V -8.0A
lÿ Available in Tape & Reel 32mΩ@VGS = -4.5V -6.8A
lÿ Lead-Free

Description
New trench HEXFET® Power MOSFETs from S1
1 8
D1
International Rectifier utilize advanced processing 2 7
G1 D1
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the S2
3 6
D2
ruggedized device design that HEXFET power 4 5
MOSFETs are well known for, provides the designer G2 D2

with an extremely efficient and reliable device for use SO-8

in battery and load management applications. Top View

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain-Source Voltage -30 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -8.0
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -6.4 A
IDM Pulsed Drain Current -32
PD @TA = 25°C Maximum Power Dissipationƒ 2.0 W
PD @TA = 70°C Maximum Power Dissipationƒ 1.3 W
Linear Derating Factor 16 mW/°C
VGS Gate-to-Source Voltage ± 20 V
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance
Parameter Max. Units
RθJA Maximum Junction-to-Ambient ƒ 62.5 °C/W

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.018 ––– V/°C Reference to 25°C, ID = -1mA
––– 17 21 VGS = -10V, ID = -8.0A ‚
RDS(on) Static Drain-to-Source On-Resistance mΩ
––– 26.8 32 VGS = -4.5V, ID = -6.8A ‚
VGS(th) Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 12 ––– ––– S VDS = -10V, ID = -8.0A
––– ––– -15 VDS = -24V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
Qg Total Gate Charge ––– 52 78 ID = -8.0A
Qgs Gate-to-Source Charge ––– 9.8 ––– nC VDS = -15V
Qgd Gate-to-Drain ("Miller") Charge ––– 8.3 ––– VGS = -10V
td(on) Turn-On Delay Time ––– 13 20 VDD = -15V, VGS = -10.0V
tr Rise Time ––– 15 23 ID = -1.0A
ns
td(off) Turn-Off Delay Time ––– 198 297 RG = 6.0Ω
tf Fall Time ––– 98 147 RD = 15Ω ‚
Ciss Input Capacitance ––– 2675 ––– VGS = 0V
Coss Output Capacitance ––– 409 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 262 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– -2.0

(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– -32
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V ‚
trr Reverse Recovery Time ––– 37 56 ns TJ = 25°C, IF = -2.0A
Qrr Reverse Recovery Charge ––– 36 54 nC di/dt = -100A/µs ‚

Notes:
 Repetitive rating; pulse width limited by ƒ Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.

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 IRF7328PbF

100 100
VGS VGS
TOP -10.0V TOP -10.0V
-5.0V -5.0V

-ID, Drain-to-Source Current (A)

-ID, Drain-to-Source Current (A)

-4.5V -4.5V
-4.0V -4.0V
-3.5V -3.5V
-3.3V -3.3V
10 10 -3.0V
-3.0V
BOTTOM -2.7V BOTTOM -2.7V

-2.7V

1 1

-2.7V

20µs PULSE WIDTH

20µs PULSE WIDTH Tj = 150°C
Tj = 25°C
0.1 0.1
0.1 1 10 100 0.1 1 10 100

-VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.0
RDS(on) , Drain-to-Source On Resistance

ID = -8.0A
-I D , Drain-to-Source Current (A)

1.5
10 TJ = 150° C
(Normalized)

1.0

TJ = 25 ° C
1
0.5

V DS= -15V
20µs PULSE WIDTH VGS = -10V
0.1 0.0
2.0 3.0 4.0 5.0 6.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRF7328PbF
4000 14
VGS = 0V, f = 1MHz ID = -8A
Ciss = Cgs + Cgd , Cds SHORTED

-VGS , Gate-to-Source Voltage (V)

Crss = Cgd V DS=-24V
12 V DS=-15V
Coss = Cds + Cgd
3000
C, Capacitance (pF)

Ciss 10

8
2000
6

4
1000
Coss
2
Crss
0 0
1 10 100 0 10 20 30 40 50 60
-VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-ISD , Reverse Drain Current (A)

TJ = 150° C
-IID , Drain Current (A)

10 100

TJ = 25 ° C

100us
1 10

1ms

TC = 25 °C
TJ = 150 °C 10ms
V GS = 0 V Single Pulse
0.1 1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100
-VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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10.0
RD
VDS

8.0 VGS
D.U.T.
-ID , Drain Current (A)

RG -
+ VDD
6.0
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0

Fig 10a. Switching Time Test Circuit

2.0
td(on) tr t d(off) tf
VGS
0.0 10%
25 50 75 100 125 150
TTCA , Case Temperature ( ° C)

90%
Fig 9. Maximum Drain Current Vs. VDS
Case Temperature
Fig 10b. Switching Time Waveforms

1000
Thermal Response (Z thJA )

100

D = 0.50

0.20
10
0.10
0.05 PDM

0.02 t1
1 0.01
t2
SINGLE PULSE
(THERMAL RESPONSE) Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7328PbF

0.060 0.100

( )
RDS ( on ) , Drain-to-Source On Resistance Ω
RDS(on), Drain-to -Source On ResistanceΩ)
(

0.050
0.075
0.040

0.030 ID = -8.0A 0.050

VGS = -4.5V
0.020
0.025 VGS = -10V
0.010

0.000 0.000
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0 10 20 30 40 50 60 70
-VGS, Gate -to -Source Voltage (V) -ID , Drain Current ( A )

Fig 12. Typical On-Resistance Vs. Fig 13. Typical On-Resistance Vs.
Gate Voltage Drain Current

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF
-
10 V D.U.T. +VDS
QGS QGD
VGS

-3mA
VG
IG ID
Current Sampling Resistors

Charge

Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit

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 IRF7328PbF

SO-8 Package Outline

Dimensions are shown in milimeters (inches)
INCHES MILLIMET ERS
DIM
D B MIN MAX MIN MAX
A 5 A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E
0.25 [.010] A E .1497 .1574 3.80 4.00
1 2 3 4
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
6X e
L .016 .050 0.40 1.27
y 0° 8° 0° 8°

e1 K x 45°
A
C y
θ

0.10 [.004]
8X b A1 8X L 8X c

0.25 [.010] C A B 7

FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028]
2. CONT ROLLING DIMENSION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUS IONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUS IONS NOT TO EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGTH OF LEAD FOR S OLDERING T O
A SUBST RAT E.

3X 1.27 [.050] 8X 1.78 [.070]

SO-8 Part Marking Information (Lead-Free)

EXAMPLE: T HIS IS AN IRF7101 (MOS FET )

DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
XXXX WW = WEEK
INT ERNAT IONAL F7101 A = AS S EMBLY S IT E CODE
RECT IFIER LOT CODE
LOGO
PART NUMBER

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IRF7328PbF

SO-8 Tape and Reel

Dimensions are shown in milimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/2010
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