PD - 9.

1104B

IRF7205
HEXFET® Power MOSFET
l Adavanced Process Technology A
1 8
S D
l Ultra Low On-Resistance
VDSS = -30V
l P-Channel MOSFET S
2 7
D
l Surface Mount 3 6
S D
l Available in Tape & Reel RDS(on) = 0.070Ω
4 5
l Dynamic dv/dt Rating G D

l Fast Switching ID = -4.6A

Description T o p View
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and S O -8
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -4.6
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -3.7 A
IDM Pulsed Drain Current  -15
PD @TC = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.020 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt ‚ -3.0 V/nS
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance Ratings

Parameter Min. Typ. Max. Units
RθJA Maximum Junction-to-Ambient „ ––– ––– 50 °C/W

8/25/97
IRF7205
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.070 VGS = -10V, I D = -4.6A ƒ
RDS(ON) Static Drain-to-Source On-Resistance Ω
––– ––– 0.130 VGS = -4.5V, ID = -2.0A ƒ
VGS(th) Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, I D = -250µA
gfs Forward Transconductance ––– 6.6 ––– S V DS = -15V, ID = -4.6A ƒ
––– ––– -1.0 VDS = -24V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -5.0 VDS = -15V, VGS = 0V, TJ = 70 °C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
Qg Total Gate Charge ––– 27 40 I D = -4.6A
Q gs Gate-to-Source Charge ––– 5.2 ––– nC VDS = -15V
Q gd Gate-to-Drain ("Miller") Charge ––– 7.5 ––– VGS = -10V ƒ
t d(on) Turn-On Delay Time ––– 14 30 VDD = -15V
tr Rise Time ––– 21 60 I D = -1.0A
ns
t d(off) Turn-Off Delay Time ––– 97 150 R G = 6.0Ω
tf Fall Time ––– 71 100 RD = 10Ω ƒ
D
LD Internal Drain Inductance ––– 2.5 –––
Between lead,6mm(0.25in.)
nH G
from package and center
LS Internal Source Inductance ––– 4.0 –––
of die contact S

Ciss Input Capacitance ––– 870 ––– VGS = 0V

Coss Output Capacitance ––– 720 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 220 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– -2.5

(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– -15
(Body Diode)  p-n junction diode. S

V SD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.25A, VGS = 0V ƒ

t rr Reverse Recovery Time ––– 70 100 ns TJ = 25°C, IF = -4.6A
Q rr Reverse RecoveryCharge ––– 100 180 nC di/dt = 100A/µs ƒ
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.

‚ ISD ≤ -4.6A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS , „ Surface mounted on FR-4 board, t ≤ 10sec.
TJ ≤ 150°C
IRF7205
IRF7205
C,

12
 IRF7205
RD
V DS

VGS
D.U.T.
RG -
+ VDD

-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

td(on) tr t d(off) tf
VGS
10%

90%
VDS

Fig 10b. Switching Time Waveforms

100
(Z thJA )

D = 0.50

10 0.20

0.10
Thermal Response

0.05

0.02 PDM
1
0.01 t1

SINGLE PULSE t2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7205

Current Regulator
Same Type as D.U.T.

50KΩ
QG 12V .2µF
.3µF
-10V -
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit
 IRF7205
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* • Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• I SD controlled by Duty Factor "D" V DD
-
• D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 13.For P-Channel HEXFETS

IRF7205
Package Outline
SO8 Outline

INCHES MILLIMETERS
D DIM
5 MIN MAX MIN MAX
-B-
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
8 7 6 5
5 B .014 .018 0.36 0.46
E H
-A- 0.25 (.010) M A M C .0075 .0098 0.19 0.25
1 2 3 4
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e e .050 BASIC 1.27 BASIC
K x 45°
6X e1 e1 .025 BASIC 0.635 BASIC
θ
A H .2284 .2440 5.80 6.20

-C- K .011 .019 0.28 0.48

0.10 (.004) L 6 C
B 8X A1 8X 8X L 0.16 .050 0.41 1.27

0.25 (.010) M C A S B S θ 0° 8° 0° 8°
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 0.72 (.028 )
8X
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 ) 1.78 (.070)
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X

Part Marking Information

SO8

E X A M P LE : TH IS IS A N IR F 7 101

D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W EEK
3 12
IN T E R N A TI ON A L XX X X
F 7 101
R E C T IF IE R W AFER
LO G O LO T C O D E
PART NUMBER
T OP (LA S T 4 D IG IT S ) B O T TO M
 IRF7205
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)

T ER M IN A L N U M B E R 1

12 .3 ( .48 4 )
11 .7 ( .46 1 )

8 .1 ( .3 18 )
7 .9 ( .3 12 ) F E ED D IR E C T IO N

N O TE S:
1 . CO N TRO LL IN G D IM E N SIO N : M ILLIM E TE R.
2 . A LL DIM E NS IO NS A R E S HO W N IN M ILL IM E TER S (INC HE S ).
3 . O UTL IN E C O NFO RM S TO E IA - 48 1 & E IA -5 41 .

33 0. 00
(12 .99 2)
M A X.

1 4. 40 ( .5 66 )
1 2. 40 ( .4 88 )
N O T ES :
1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER .
2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1.

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http://www.irf.com/ Data and specifications subject to change without notice. 8/97