PD - 9.

1096B

IRF7104
HEXFET® Power MOSFET
l Adavanced Process Technology
1 8
l Ultra Low On-Resistance S1 D1
VDSS = -20V
l Dual P-Channel MOSFET G1 2 7
D1
l Surface Mount 3 6
l Available in Tape & Reel
S2 D2 RDS(on) = 0.250Ω
4 5
l Dynamic dv/dt Rating G2 D2

l Fast Switching ID = -2.3A

Description Top View
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and S O -8
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -2.3
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -1.8 A
IDM Pulsed Drain Current  -10
PD @TC = 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt ‚ -3.0 V/nS
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance Ratings

Parameter Min. Typ. Max. Units
RθJA Maximum Junction-to-Ambient „ ––– ––– 62.5 °C/W

8/25/97
IRF7104
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.015 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.19 0.25 VGS = -10V, I D = -1.0A ƒ
RDS(ON) Static Drain-to-Source On-Resistance Ω
––– 0.30 0.40 VGS = -4.5V, ID = -0.50A ƒ
VGS(th) Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, I D = -250µA
gfs Forward Transconductance ––– 2.5 ––– S V DS = -15V, ID = -2.3A ƒ
––– ––– -2.0 VDS = -16V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 55 °C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
Qg Total Gate Charge ––– 9.3 25 I D = -2.3A
Q gs Gate-to-Source Charge ––– 1.6 ––– nC VDS = -10V
Q gd Gate-to-Drain ("Miller") Charge ––– 3.0 ––– VGS = -10V ƒ
t d(on) Turn-On Delay Time ––– 12 40 VDD = -10V
tr Rise Time ––– 16 40 I D = -1.0A
ns
t d(off) Turn-Off Delay Time ––– 42 90 R G = 6.0Ω
tf Fall Time ––– 30 50 RD = 10Ω ƒ
D
LD Internal Drain Inductance ––– 4.0 –––
Between lead,6mm(0.25in.)
nH G
from package and center
LS Internal Source Inductance ––– 6.0 –––
of die contact S

Ciss Input Capacitance ––– 290 ––– VGS = 0V

Coss Output Capacitance ––– 210 ––– pF VDS = -15V
Crss Reverse Transfer Capacitance ––– 67 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– -2.0
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– -9.2

(Body Diode)  p-n junction diode. S

V SD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.25A, VGS = 0V ƒ

t rr Reverse Recovery Time ––– 69 100 ns TJ = 25°C, IF = -1.25A
Q rr Reverse RecoveryCharge ––– 90 140 nC di/dt = 100A/µs ƒ
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.

‚ ISD ≤ -2.3A, di/dt ≤ 100A/µs, VDD ≤ V (BR)DSS, „ Surface mounted on FR-4 board, t ≤ 10sec.
TJ ≤ 150°C
 IRF7104

-ID , Drain-to-Source Current ( A )

-ID , Drain-to-Source Current ( A )

-VDS , Drain-to-Source Voltage ( V ) -VDS , Drain-to-Source Voltage ( V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

RDS (on) , Drain-to-Source On Resistance
-ID , Drain-to-Source Current ( A )

( Normalized)

-VGS , Gate-to-Source Voltage ( V ) TJ , Junction Temperature ( °C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRF7104

-V GS , Gate-to-Source Voltage ( V )
C , Capacitance ( pF )

SEE FIGURE 12

-VDS , Drain-to-Source Voltage ( V ) QG , Total Gate Charge ( nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage
-ISD , Reverse Drain Current ( A )

-ID , Drain Current ( A )

-VSD , Source-to-Drain Voltage ( V ) -VDS , Drain-to-Source Voltage ( V )

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRF7104
RD
V DS

VGS
D.U.T.
RG
-ID , Drain Current ( A )

-
+ VDD

-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

td(on) tr t d(off) tf
VGS
10%

TA , Ambient Temperature ( °C )
90%
VDS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature Fig 10b. Switching Time Waveforms

100

D = 0.50
(Z thJA )

0.20
10
0.10
Thermal Response

0.05

0.02
PDM
0.01
1
SINGLE PULSE t1
(THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100
t1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7104

Current Regulator
Same Type as D.U.T.

50KΩ
QG 12V .2µF
.3µF
-10V -
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit
 IRF7104
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* • Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" V DD
-
• D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 13.For P-Channel HEXFETS

IRF7104
Package Outline
SO8 Outline

INCHES MILLIMETERS
D DIM
5 MIN MAX MIN MAX
-B-
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
8 7 6 5
5 B .014 .018 0.36 0.46
E H
-A- 0.25 (.010) M A M C .0075 .0098 0.19 0.25
1 2 3 4
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e e .050 BASIC 1.27 BASIC
K x 45°
6X e1 e1 .025 BASIC 0.635 BASIC
θ
A H .2284 .2440 5.80 6.20

-C- K .011 .019 0.28 0.48

0.10 (.004) L 6 C
B 8X A1 8X 8X L 0.16 .050 0.41 1.27

0.25 (.010) M C A S B S θ 0° 8° 0° 8°
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 0.72 (.028 )
8X
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 ) 1.78 (.070)
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X

Part Marking Information

SO8

E X A M P LE : TH IS IS A N IR F 7 101

D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W EEK
3 12
IN T E R N A TI ON A L XX X X
F 7 101
R E C T IF IE R W AFER
LO G O LO T C O D E
PART NUMBER
T OP (LA S T 4 D IG IT S ) B O T TO M
 IRF7104
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)

T ER M IN A L N U M B E R 1

12 .3 ( .48 4 )
11 .7 ( .46 1 )

8 .1 ( .3 18 )
7 .9 ( .3 12 ) F E ED D IR E C T IO N

N O TE S:
1 . CO N TRO LL IN G D IM E N SIO N : M ILLIM E TE R.
2 . A LL DIM E NS IO NS A R E S HO W N IN M ILL IM E TER S (INC HE S ).
3 . O UTL IN E C O NFO RM S TO E IA - 48 1 & E IA -5 41 .

33 0. 00
(12 .99 2)
M A X.

1 4. 40 ( .5 66 )
1 2. 40 ( .4 88 )
N O T ES :
1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER .
2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1.

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http://www.irf.com/ Data and specifications subject to change without notice. 8/97