ELECTRONICS AND COMMUNICATION ENGINEERING
ECT292 NANOELECTRONICS CATEGORY L T P CREDIT
Honors 3 1 0 4
Preamble: This course aims to understand the physics behind mesoscopic systems and working
of nanoelectronic devices.
Prerequisite: PHT100 Engineering Physics A, ECT201 Solid State Devices
Course Outcomes: After the completion of the course the student will be able to
CO 1 Explain quantum mechanical effects associated with low dimensional semiconductors.
CO 2 Explain the different processes involved in the fabrication of nanoparticles and
nanolayers.
CO 3 Explain the different techniques for characterizing nano layers and particles
CO 4 Explain the different transport mechanisms in nano structures
CO 5 Illustrate the operating principle of nanoscale electronic devices like SET, Resonant
tunnelling devices, Quantum lasers etc.
Mapping of course outcomes with program outcomes
PO PO PO PO PO PO PO PO PO PO PO PO
1 2 3 4 5 6 7 8 9 10 11 12
CO 2
1
CO 2
2
CO 1
3
CO 2
4
CO 2
5
Assessment Pattern
Bloom’s Category Continuous Assessment Tests End Semester Examination
1 2
Remember 10 10 20
Understand 35 35 70
Apply 5 5 10
Analyse
Evaluate
Create
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Mark distribution
ESE
Total Marks CIE ESE
Duration
150 50 100 3 hours
Continuous Internal Evaluation Pattern:
Attendance : 10 marks
Continuous Assessment Test (2 numbers) : 25 marks
Assignment/Quiz/Course project : 15 marks
End Semester Examination Pattern: There will be two parts; Part A and Part B. Part A contain
10 questions with 2 questions from each module, having 3 marks for each question. Students
should answer all questions. Part B contains 2 questions from each module of which student
should answer any one. Each question can have maximum 2 sub-divisions and carry 14 marks.
Course Level Assessment Questions
Course Outcome 1 (CO1): Explain the quantum mechanical effects associated with low
dimensional semiconductors.
1. Derive the expression for density of states in a 1D nanomaterial.
2. Compare and contrast triangular, square and parabolic quantum wells.
3. Solve numerical problems to find whether the given material is a nanometric one.
Course Outcome 2 (CO2) : Explain the different processes involved in the fabrication of
nanoparticles and nanolayers.
1. Explain Sol-Gel process for synthesis of nanoparticles.
2. Explain the different steps involved in CVD process for fabricating nanolayers.
3. DC sputtering cannot be used for the coating of non- conducting materials. Justify.
Course Outcome 3 (CO3): Explain the different techniques for characterizing nano layers
and particles.
1. Illustrate the working principle of an AFM.
2. Explain the different emission and interactions between electron beam and the specimen.
3. Explain the principle of operation of an XRD.
Course Outcome 4 (CO4): Explain the different transport mechanisms in nano structures.
1. Explain Kronig Penney model of a super lattice.
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2. Explain modulation doping with an example.
3. Explain the different scattering events encountered by a carrier during parallel transport
under the influence of electric field.
Course Outcome 5 (CO5): Illustrate the operating principle of nanoscale electronic devices
like SET, Resonant tunnelling devices, Quantum lasers etc.
1. Explain Coulomb blockade effect. Illustrate the working of a single electron transistor.
2. Draw the schematic representation of the conduction band of a resonant tunnel diode for
(a) no voltage applied (b) increasing applied voltages. Explain its I-V characteristics.
3. MODFETS are high electron mobility transistors. Justify.
Syllabus
Module I
Introduction to nanotechnology, Limitations of conventional microelectronics, characteristic
lengths in mesoscopic systems, Quantum mechanical coherence.
Low dimensional structures - Quantum wells, wires and dots, Density of states of 1D and 2D
nanostructures.
Basic properties of square quantum wells of finite depth, parabolic and triangular quantum wells
Module II
Introduction to methods of fabrication of nano-layers: physical vapour deposition- evaporation &
Sputtering, Chemical vapour deposition, Molecular Beam Epitaxy, Ion Implantation, Formation
of Silicon Dioxide- dry and wet oxidation methods.
Fabrication of nano particle- grinding with iron balls, laser ablation, reduction methods, sol gel,
self assembly, precipitation of quantum dots.
Module III
Introduction to characterization of nanostructures: Principle of operation of Scanning Tunnelling
Microscope, Atomic Force Microscope, Scanning Electron microscope - specimen interaction, X-
Ray Diffraction analysis
Module IV
Quantum wells, multiple quantum wells, Modulation doped quantum wells, concept of super
lattices Kronig - Penney model of super lattice.
Transport of charge in Nanostructures - Electron scattering mechanisms, Hot electrons, Resonant
tunnelling transport, Coulomb blockade, Effect of magnetic field on a crystal. Aharonov-Bohm
effect, the Shubnikov-de Hass effect.
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Module V
Nanoelectonic devices - MODFETS, Single Electron Transistor, CNT transistors – Properties of
graphene
Resonant tunnel effect, RTD, RTT, Hot electron transistors
Quantum well laser, quantum dot LED, quantum dot laser
Text Books
1. J.M. Martinez-Duart, R.J. Martin Palma, F. Agulle Rueda Nanotechnology for
Microelectronics and optoelectronics , Elsevier, 2006
2. W.R. Fahrner, Nanotechnology and Nanoelctronics, Springer, 2005
Reference Books
1. Chattopadhyay, Banerjee, Introduction to Nanoscience & Technology, PHI 2012
2. Poole, Introduction to Nanotechnology, John Wiley 2006.
3. George W. Hanson, Fundamentals of Nanoelectronics, Pearson Education, 2009.
4. K. Goser, P. Glosekotter, J. Dienstuhl, Nanoelectronics and nanosystems, Springer 2004.
5. Supriyo Dutta, Quantum Transport- Atom to transistor, Cambridge, 2013.
Course Contents and Lecture Schedule
No Topic No. of
Lectures
1 MODULE 1
1.1 Introduction to nanotechnology, Limitations of conventional 1
microelectronics
1.2 Characteristic lengths in mesoscopic systems 1
1.3 Quantum mechanical coherence, Schrodinger’s equation, 3
Low dimensional structures - Quantum wells, wires and dots
1.4 Density of states of 1D and 2D nanostructures 2
1.5 Basic properties of square quantum wells of finite depth, parabolic and 3
triangular quantum wells
2 MODULE 2
2.1 Introduction to methods of fabrication of nano-layers: physical vapour 2
deposition- evaporation & Sputtering,
2.2 Chemical vapour deposition, Molecular Beam Epitaxy 2
2.3 Ion Implantation, Formation of Silicon Dioxide- dry and wet oxidation 2
methods
2.4 Fabrication of nano particle- grinding with iron balls, laser ablation, 2
reduction methods
2.5 Sol - Gel, self assembly, precipitation of quantum dots. 2
3 MODULE 3
3.1 Introduction to characterization of nanostructures: Principle of operation 2
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of Scanning Tunnelling Microscope
3.2 Atomic Force Microscope 1
3.3 Scanning Electron microscope - specimen interaction. 1
3.4 X-Ray Diffraction analysis 1
4 MODULE 4
4.1 Quantum wells, multiple quantum wells, Modulation doped quantum 2
wells, concept of super lattices
4.2 Kronig - Penney model of super lattice. 1
4.3 Transport of charge in Nanostructures - Electron scattering mechanisms, 1
Hot electrons
4.4 Resonant tunnelling transport, Coulomb blockade 2
4.5 Quantum transport in nanostructures - Coulomb blockade 1
4.6 Effect of magnetic field on a crystal. Aharonov-Bohm effect 2
4.7 Shubnikov-de Hass effect 1
5 MODULE 5
5.1 Nano electonic devices- MODFETS 2
5.2 Single Electron Transistor 1
5.3 CNT transistors , Properties of graphene 2
5.4 RTD, RTT, Hot electron transistors 3
5.5 Quantum well laser, quantum dot LED, quantum dot laser 2
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APJ ABDUL KALAM TECHNOLOGICAL UNIVERSITY
MODEL QUESTION PAPER
ECT 292 NANOELECTRONICS
Time: 3 hours Max. Marks:100
PART A
Answer all questions. Each question carries 3 marks.
1. Explain any three characteristic lengths in mesoscopic systems.
2. Explain the terms (i) coherence length (ii) phase coherence.
3. Explain Laser ablation method for nanoparticle fabrication.
4. DC sputtering cannot be used for coating of non-conducting materials. Justify
5. Explain two different modes of operation of a STM.
6. Explain XRD method for characterizing nano materials.
7. Differentiate between the two types of multiple quantum wells.
8. Explain Aharonov-Bohm effect.
9. Explain why MODFETs are called high electron mobility transistors.
10. List any six properties of graphene.
PART B
Answer any one question from each module. Each question carries 14 marks.
MODULE I
11. (a) Show that DOS in a 2D material is independent of energy. (8 marks)
(b) Explain any three physical limitations in reducing the size of devices in Nano
metric scale. (6 marks)
12. Compare and contrast square, parabolic and triangular quantum wells (14 marks)
MODULE III
13. (a) Illustrate the process of Molecular Beam Epitaxi for fabricating nano layers. (8 marks)
(b) Differentiate between dry oxidation and wet oxidation techniques (6 marks)
14. (a) Sketch and label a CVD reactor and explain the different steps involved in the CVD
process. (8 marks)
(b) Explain the reduction method for nano particle fabrication (6 marks)
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MODULE III
15. Explain the different specimen interactions of an electron beam and illustrate the working of
a SEM (14 marks)
16. Explain the principle of operation of an AFM. Explain the different modes of operation.
(14 marks)
17. (a) Explain Kronig–Penney model of a super lattice. What is meant by Zone folding?
(10 marks)
(b) Explain the concept of hot electrons in parallel transport (4 marks)
18. (a) Explain Coulomb Blockade effect (8 marks)
(b) Illustrate resonant tunneling effect. (6 marks)
MODULE V
19. (a) Draw the schematic and explain the working of a single electron transistor (8 marks)
(b) Explain working of resonant tunneling diodes (6 marks)
20. (a) Illustrate the working of a quantum well laser (6 marks)
(b) Explain the different types of Carbon Nano Tube transistors (8 marks)
