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Technical Data: NPN Silicon Medium Power Transistor

This document provides technical data for four NPN silicon medium power transistors: the 2N1483, 2N1484, 2N1485, and 2N1486. It lists maximum ratings for voltage, current, and power as well as electrical characteristics including breakdown voltages, cutoff currents, transfer ratios, saturation voltages, and switching times. All devices are qualified per MIL-PRF-19500/207 standards and are available in JAN qualified versions.

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60 views4 pages

Technical Data: NPN Silicon Medium Power Transistor

This document provides technical data for four NPN silicon medium power transistors: the 2N1483, 2N1484, 2N1485, and 2N1486. It lists maximum ratings for voltage, current, and power as well as electrical characteristics including breakdown voltages, cutoff currents, transfer ratios, saturation voltages, and switching times. All devices are qualified per MIL-PRF-19500/207 standards and are available in JAN qualified versions.

Uploaded by

Petr gga
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© © All Rights Reserved
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TECHNICAL DATA

NPN SILICON MEDIUM POWER TRANSISTOR


Qualified per MIL-PRF-19500/207

Devices Qualified Level

JAN
2N1483 2N1484 2N1485 2N1486
JANTX

MAXIMUM RATINGS
Ratings Symbol 2N1483 2N1484 Unit
2N1485 2N1486
Collector-Emitter Voltage VCEO 40 55 Vdc
Collector-Base Voltage VCBO 60 100 Vdc
Emitter-Base Voltage VEBO 12 Vdc
Collector Current -- Continuous IC 3.0 Adc
Total Power Dissipation @ TA = 250C (1) 1.75 W
PT
@ TC = 250C (2) 25 W TO-8*
0
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C
1) Derate linearly 0.010 W/0C for TA > 250C
2) Derate linearly 0.143 W/0C for TC > 250C
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc 2N1483, 2N1485 V(BR)CEO 40 Vdc
2N1484, 2N1486 55
Collector-Base Breakdown Voltage
IC = 100 µAdc 2N1483, 2N1485 V(BR)CBO 60 Vdc
2N1484, 2N1486 100
Collector-Emitter Breakdown Voltage
VEB = 1.5 Vdc, IC = 0.25 mAdc 2N1483, 2N1485 V(BR)CEX 60 Vdc
2N1484, 2N1486 100
Collector-Base Cutoff Current
VCB = 30 Vdc 2N1483, 2N1485 ICBO 15 µAdc
VCB = 50 Vdc 2N1484, 2N1486 15
Emitter-Base Cutoff Current
IEBO 15 µAdc
VEB = 12 Vdc

6 Lake Street, Lawrence, MA 01841 120101


1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 1 of 2
2N1483, 2N1484, 2N1485, 2N1486 JAN SERIES

ELECTRICAL CHARACTERISTICS (con”t)


Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 750 mAdc, VCE = 4.0 Vdc 2N1483, 2N1484 hFE 20 60
2N1485, 2N1486 35 100
Collector-Emitter Saturation Voltage
IC = 750 mAdc, IB = 75 mAdc 2N1483, 2N1484 VCE(sat) 1.20
IC = 750 mAdc, IB = 40 mAdc 2N1485, 2N1486 0.75 Vdc
Base-Emitter Voltage
VBE 2.0 Vdc
IC = 750 mAdc, VCE = 4.0 Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio f
hfb 600 kHz
IC = 5.0 mAdc, VCB = 28 Vdc
Output Capacitance
Cobo 400 pF
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
µs
t
on + toff 25
VCC = 12 Vdc; RC = 15.9 Ω; IB0 = IB2 = 35 mAdc; IB1= 65 mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

6 Lake Street, Lawrence, MA 01841 120101


1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 2 of 2
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