JAYPEE UNIVERSITY OF ENGINEERING & TECHNOLOGY Jan-2018
Course Coordinator: Deepak Sharma Topic: Field Effect Transistor
Course Name: Electronics Devices and Circuits Course Code: 14B14EC211
Tutorial Sheet –
Q.1 For the JFET in Fig. 1, VGS (off) = – 4V and IDSS = 12 mA. Determine the minimum value of VDD required
to put the device in the constant-current region of operation.
Q.2 Determine the value of drain current for the circuit shown in Fig. 2
Q.3 A JFET in Fig. 3 has values of VGS (off) = – 8V and IDSS = 16 mA. Determine the values of VGS, ID and VDS
for the circuit.
Fig.1 Fig.2 Fig.3
Q.4 The data sheet of a JFET gives the following information: IDSS = 3 mA, VGS (off)= – 6V and gm (max) = 5000
µS. Determine the trans-conductance for VGS = – 4V and find drain current ID at this point.
Q.5 Find VDS and VGS in Fig. 4, given that ID = 5 mA.
Q.6 Select resistor values in Fig. 5 to set up an approximate midpoint bias. The JFET parameters are: IDSS =
15 mA and VGS (off) = – 8V. The voltage VD should be 6V (one-half of VDD).
Q.7 In a self-bias n-channel JFET, the operating point is to be set at ID = 1.5 mA and VDS =10 V. The JFET
parameters are IDSS = 5 mA and VGS (off) = - 2 V. Find the values of RS and RD. Given that VDD = 20 V.
Fig. 4 Fig. 5 Fig. 6