STD9N10
STD9N10-1
N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK
POWER MOS TRANSISTOR
Table 1. General Features Figure 1. Package
Type VDSS RDS(on) ID
STD9N10 100 V < 0.27 Ω 9A
STD9N10-1 100 V < 0.27 Ω 9A
FEATURES SUMMARY
■ TYPICAL RDS(on) = 0.23 Ω
■ AVALANCHE RUGGED TECHNOLOGY
3 3
■ 100% AVALANCHE TESTED 2
1 1
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW GATE CHARGE
IPAK DPAK
■ HIGH CURRENT CAPABILITY
TO-251 TO-252
■ 175°C OPERATING TEMPERATURE
■ APPLICATION ORIENTED
CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER
Figure 2. Internal Schematic Diagram
PACKAGE IN TUBE (SUFFIX "-1")
■ SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
Table 2. Order Codes
Part Number Marking Package Packaging
STD9N10T4 D9N10 DPAK TAPE & REEL
STD9N10-1 D9N10 IPAK TUBE
REV. 2
May 2004 1/12
This datasheet has been downloaded from http://www.digchip.com at this page
STD9N10/STD9N10-1
Table 3. Absolute Maximum Ratings
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 100 V
VDGR Drain- gate Voltage (RGS = 20 kΩ) 100 V
VGS Gate-source Voltage ± 20 V
ID Drain Current (cont.) at TC = 25 °C 9 A
ID Drain Current (cont.) at TC = 100 °C 6 A
IDM (1) Drain Current (pulsed) 36 A
Ptot Total Dissipation at TC = 25 °C 45 W
Derating Factor 0.3 W°/C
Tstg Storage Temperature -65 to 175 °C
Tj Max. Operating Junction Temperature 175 °C
Note: 1. Pulse width limited by safe operating area.
Table 4. Thermal Data
Symbol Parameter Value Unit
Rthj-case Thermal Resistance Junction-case Max 3.33 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 275 °C
Table 5. Avalanche Characteristics
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 9 A
(pulse width limited by Tj max, δ < 1%)
EAS Single Pulse Avalanche Energy 30 mJ
(starting Tj = 25 °C; ID = IAR; VDD = 25 V)
EAR Repetitive Avalanche Energy 7 mJ
(pulse width limited by Tj max, δ < 1%)
IAR Avalanche Current, Repetitive or Not-Repetitive 6 A
(Tc = 100 °C, pulse width limited by Tj max, δ < 1%)
2/12
STD9N10/STD9N10-1
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)
Table 6. Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 µA; VGS = 0 100 V
Breakdown Voltage
IDSS Zero Gate Voltage VDS = Max Rating 250 µA
Drain Current (VGS = 0) VDS = Max Rating x 0.8; Tc = 125 °C 1000 µA
IGSS Gate-body Leakage VGS = ± 20 V ± 100 nA
Current (VDS = 0)
Table 7. On (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS; ID = 250 µA 2 3 4 V
RDS(on) Static Drain-source On VGS = 10V; ID = 4.5 A 0.23 0.27 Ω
Resistance VGS = 10V; ID = 4.5 A; Tc = 100 °C 0.54 Ω
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 8. Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward VDS > ID(on) x RDS(on)max; ID = 4.5 A 2 4 S
Transconductance
Ciss Input Capacitance VDS = 25 V; f = 1 MHz; VGS = 0 330 450 pF
Coss Output Capacitance 90 120 pF
Crss Reverse Transfer 25 40 pF
Capacitance
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 9. Switching On
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Time VDD = 50 V; ID = 4.5 A; RG = 4.7 Ω 10 15 ns
tr Rise Time VGS = 10 V (see test circuit, Figure 22) 40 60 ns
(di/dt)on Turn-on Current Slope VDD = 80 V; ID = 9 A; RG = 4.7 Ω 440 A/µs
VGS = 10 V (see test circuit, Figure 22)
Qg Total Gate Charge VDD = 80 V; ID = 9 A; VGS = 10 V 15 25 nC
Qgs Gate-Source Charge 6 nC
Qgd Gate-Drain Charge 5 nC
Table 10. Switching Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff) Off-voltage Rise Time VDD = 80 V; ID = 9 A; RG = 4.7 Ω 15 25 ns
tf Fall Time VGS = 10 V (see test circuit, Figure 24) 25 35 ns
tc Cross-over Time 50 70 ns
3/12
STD9N10/STD9N10-1
Table 11. Source Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 9 A
ISDM (1) Source-drain Current 36 A
(pulsed)
VSD (2) Forward On Voltage ISD = 9 A; VGS = 0 1.5 V
trr Reverse Recovery Time ISD = 9 A; di/dt = 100 A/µs 80 ns
VDD = 20 V; Tj = 150 °C
Qrr Reverse RecoveryCharge 0.2 µC
(see test circuit, Figure 24)
IRRAM Reverse RecoveryCurrent 5 A
Note: 1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Figure 3. Safe Operating Area Figure 4. Thermal Impedance
Figure 5. Derating Curve Figure 6. Output Characteristics
4/12
STD9N10/STD9N10-1
Figure 7. Transfer Characteristics Figure 8. Transconductance
Figure 9. Static Drain-source On Resistance Figure 10. Gate Charge vs Gate-source Voltage
Figure 11. Capacitance Variations Figure 12. Normalized Gate Threshold Voltage
vs Temperature
5/12
STD9N10/STD9N10-1
Figure 13. Normalized On Resistance vs Figure 14. Turn-on Current Slope
Temperature
Figure 15. Turn-off Drain-source Voltage Slope Figure 16. Cross-over Time
Figure 17. Switching Safe Operating Area Figure 18. Accidental Overload Area
6/12
STD9N10/STD9N10-1
Figure 19. Source-drain Diode Forward
Characteristics
7/12
STD9N10/STD9N10-1
Figure 20. Unclamped Inductive Load Test Figure 21. Unclamped Inductive Waveforms
Circuit
Figure 22. Switching Times Test Circuits For Figure 23. Gate Charge Test Circuit
Resistive Load
Figure 24. Test Circuit For Inductive Load
Switching And Diode Recovery Times
8/12
STD9N10/STD9N10-1
PACKAGE MECHANICAL
Table 12. DPAK Mechanical Data
millimeters inches
Symbol
Min Typ Max Min Typ Max
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0° 8° 0° 0°
Figure 25. DPAK Package Dimensions
P032P_B
Note: Drawing is not to scale.
9/12
STD9N10/STD9N10-1
Table 13. IPAK Mechanical Data
millimeters inches
Symbol
Min Typ Max Min Typ Max
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.63 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
Figure 26. IPAK Package Dimensions
H
C
A
A3
C2
A1
L2 D L
B3
B6
B5
B
3
=
=
B2
G
E
2
=
L1
0068771-E
Note: Drawing is not to scale.
10/12
STD9N10/STD9N10-1
REVISION HISTORY
Table 14. Revision History
Date Revision Description of Changes
March-1996 1 First Issue
3-May-2004 2 Stylesheet update. No content change.
11/12
STD9N10/STD9N10-1
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