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Arrow
Arrow Electronics,
Electronics, Inc
Verical Division
9201 East Dry Creek Road
P.O. Box 740970
Centennial,
Los Angeles, CO 80112
CA 90074-0970

This coversheet was created by Verical, a division of Arrow Electronics, Inc. (“Verical”). The attached document was created by the part supplier,
not Verical, and is provided strictly 'as is.' Verical, its subsidiaries, affiliates, employees, and agents make no representations or warranties
regarding the attached document and disclaim any liability for the consequences of relying on the information therein. All referenced brands,
product names, service names, and trademarks are the property of their respective owners.
 Micron Confidential and Proprietary

4GB, 8GB, 16GB: e·MMC

Features

e·MMC™ Memory
MTFC4GACAAAM-1M WT
MTFC8GACAAAM-1M WT
MTFC16GAAAADV-2M WT

Features Figure 1: Micron e·MMC Device

• MultiMediaCard (MMC) controller and NAND Flash

• 153-ball VFBGA and 169-ball VFBGA
(RoHS compliant, "green package")
• VCC: 2.7–3.6V
• VCCQ (dual voltage): 1.65–1.95V; 2.7–3.6V
• Temperature ranges MMC MMC controller MMC
power interface
– Operating temperature: –25˚C to +85˚C
– Storage temperature: –40˚C to +85˚C

MMC-Specific Features
• JEDEC/MMC standard version 4.51-compliant NAND Flash
(JEDEC Standard No. 84-B451) – SPI mode not power NAND Flash
supported 1
– Advanced 11-signal interface
– x1, x4, and x8 I/Os, selectable by host
– SDR/DDR modes up to 52 MHz clock speed
– HS200 mode
– Real-time clock
– Command classes: class 0 (basic); class 2 (block MMC-Specific Features (Continued)
read); class 4 (block write); class 5 (erase); – Background operation
class 6 (write protection); class 7 (lock card) – Reliable write
– Temporary write protection – Discard and sanitize
– Boot operation (high-speed boot) – Extended partitioning
– Sleep mode – Context ID
– Replay-protected memory block (RPMB) – Data TAG
– Secure erase and secure trim – Packed commands
– Hardware reset signal – Dynamic device capacity
– Multiple partitions with enhanced attribute – Backward compatible with previous MMC
– Permanent and power-on write protection – Thermal specification
– High-priority interrupt (HPI) – Cache
• ECC and block management implemented
Note: 1. The JEDEC specification is available at
www.jedec.org/sites/default/files/docs/
JESD84-B451.pdf.

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Products and specifications discussed herein are subject to change by Micron without notice.
 Micron Confidential and Proprietary

4GB, 8GB, 16GB: e·MMC

Features

e·MMC Performance and Current Consumption

Table 1: MLC Partition Performance

Typical Values
Condition 1 4GB 8GB 16GB Unit
Sequential Write 11 24 24 MB/s
Sequential Read 80 120 120 MB/s
Random Write 1000 1000 1000 IOPS
Random Read 4000 4000 4000 IOPS

Note: 1. Bus in x8 I/O and HS200 modes. Sequential access of 1MB chunk; random access of 4KB chunk over 1GB span.
Additional performance data, such as system performance on a specific application board, will be provided
in a separate document upon customer request.

Table 2: 52 MHz DDR2 Performance

Typical Values
Condition 1 4GB 8GB 16GB Unit
Sequential Write 11 24 24 MB/s
Sequential Read 75 80 80 MB/s
Random Write 1000 1000 1000 IOPS
Random Read 3800 3800 3800 IOPS

Note: 1. Bus in x8 I/O and 52 MHz DDR2 modes. Sequential access of 1MB chunk; random access of 4KB chunk over
1GB span. Additional performance data, such as system performance on a specific application board, will be
provided in a separate document upon customer request.

Table 3: Current Consumption

Typical Values (ICC/ICCQ)

Condition 1 4GB 8GB 16GB Unit
Write 50/20 60/20 60/20 mA
Read 60/60 60/60 60/60 mA
Sleep 0/180 0/180 0/180 uA
Auto-Standby 25/150 50/180 50/180 uA

Note: 1. Bus in x8 I/O and HS200 modes. VCC = 3.6V and VCCQ = 1.95V. 25°C. Measurements done as average RMS cur-
rent consumption. ICCQ in READ operation might be affected by tester load.

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4GB, 8GB, 16GB: e·MMC

Features

Part Numbering Information

Micron®e·MMC memory devices are available in different configurations and densities.

Figure 2: e·MMC Part Numbering

MT FC xx x x xx - xx

Micron Technology Production Status

Product Family Operating Temperature Range

FC = NAND Flash + controller
Package Codes
NAND Flash Density
Reserved
NAND Flash Component Blank

Controller Revision

Table 4: Ordering Information

Base Part Number Density Package Shipping

MTFC4GACAAAM-1M WT 4GB 153-ball VFBGA Tray
11.5mm x 13.0mm x 1.0mm Tape and reel
MTFC8GACAAAM-1M WT 8GB 153-ball VFBGA Tray
11.5mm x 13.0mm x 1.0mm Tape and reel
MTFC16GAAAADV-2M WT 16GB 169-ball VFBGA Tray
12.0mm x 16.0mm x 1.0mm Tape and reel

Device Marking
Due to the size of the package, the Micron-standard part number is not printed on the top of the device. Instead,
an abbreviated device mark consisting of a 5-digit alphanumeric code is used. The abbreviated device marks are
cross-referenced to the Micron part numbers at the FBGA Part Marking Decoder site: www.micron.com/decoder.

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4GB, 8GB, 16GB: e·MMC

General Description

General Description
Micron e·MMC is a communication and mass data storage device that includes a Multi-
MediaCard (MMC) interface, a NAND Flash component, and a controller on an ad-
vanced 11-signal bus, which is compliant with the MMC system specification. Its low
cost, small size, Flash technology independence, and high data throughput make
e·MMC ideal for smartphones, digital cameras, PDAs, MP3s, and other portable applica-
tions.
The nonvolatile e·MMC draws no power to maintain stored data, delivers high perform-
ance across a wide range of operating temperatures, and resists shock and vibration dis-
ruption.

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4GB, 8GB, 16GB: e·MMC

Signal Descriptions

Signal Descriptions

Table 5: Signal Descriptions

Symbol Type Description

CLK Input Clock: Each cycle of the clock directs a transfer on the command line and on the data line(s). The
frequency can vary between the minimum and the maximum clock frequency.
RST_n Input Reset: The RST_n signal is used by the host for resetting the device, moving the device to the pre-
idle state. By default, the RST_n signal is temporarily disabled in the device. The host must set ECSD
register byte 162, bits[1:0] to 0x1 to enable this functionality before the host can use it.
CMD I/O Command: This signal is a bidirectional command channel used for command and response trans-
fers. The CMD signal has two bus modes: open-drain mode and push-pull mode (see Operating
Modes). Commands are sent from the MMC host to the device, and responses are sent from the
device to the host.
DAT[7:0] I/O Data I/O: These are bidirectional data signals. The DAT signals operate in push-pull mode. By de-
fault, after power-on or assertion of the RST_n signal, only DAT0 is used for data transfer. The
MMC controller can configure a wider data bus for data transfer either using DAT[3:0] (4-bit mode)
or DAT[7:0] (8-bit mode). e·MMC includes internal pull-up resistors for data lines DAT[7:1]. Immedi-
ately after entering the 4-bit mode, the device disconnects the internal pull-up resistors on the
DAT[3:1] lines. Upon entering the 8-bit mode, the device disconnects the internal pull-ups on the
DAT[7:1] lines.
VCC Supply VCC: NAND interface (I/F) I/O and NAND Flash power supply.
VCCQ Supply VCCQ: e·MMC controller core and e·MMC I/F I/O power supply.
VSS1 Supply VSS: NAND I/F I/O and NAND Flash ground connection.
VSSQ1 Supply VSSQ: e·MMC controller core and e·MMC I/F ground connection.
VDDIM Internal voltage node: At least a 0.1μF capacitor is required to connect VDDIM to ground. A 1μF ca-
pacitor is recommended. Do not tie to supply voltage or ground.
NC – No connect: No internal connection is present.
RFU – Reserved for future use: No internal connection is present. Leave it floating externally.

Note: 1. VSS and VSSQ are connected internally.

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4GB, 8GB, 16GB: e·MMC

Package Dimensions

Package Dimensions

Figure 3: 153-Ball VFBGA – 11.50mm x 13.00mm x 1.00mm (Package Code: AM)

Seating plane

A 0.08 A

153X Ø0.32
Dimensions apply Ball A1 ID
to solder balls post- (covered by SR)
Ball A1 ID
reflow on Ø0.30 SMD
OSP ball pads. 14 12 10 8 6 4 2
13 11 9 7 5 3 1

A
B
C
D
E
6.5 CTR F
G
H
13 ±0.1 J
K
L
M
N
P

0.5 TYP

0.5 TYP 0.9 ±0.1

6.5 CTR 0.165 MIN

11.5 ±0.1
56X Ø0.27 test pads.
Ni/Au plated on pitch.
No solder balls.

Note: 1. Dimensions are in millimeters.

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4GB, 8GB, 16GB: e·MMC

153-Ball Signal Assignments

153-Ball Signal Assignments

Figure 4: 153 Ball (Top View, Ball Down)

1 2 3 4 5 6 7 8 9 10 11 12 13 14

A NC NC DAT0 DAT1 DAT2 RFU RFU NC NC NC NC NC NC NC

B NC DAT3 DAT4 DAT5 DAT6 DAT7 NC NC NC NC NC NC NC NC

C NC VDDIM NC VSSQ RFU VCCQ NC NC NC NC NC NC NC NC

D NC NC NC NC NC NC NC

E NC NC NC RFU VCC VSS RFU RFU RFU NC NC NC

F NC NC NC VCC RFU NC NC NC

G NC NC RFU VSS RFU NC NC NC

H NC NC NC RFU VSS NC NC NC

J NC NC NC RFU VCC NC NC NC

K NC NC NC RST_n RFU RFU VSS VCC RFU NC NC NC

L NC NC NC NC NC NC

M NC NC NC VCCQ CMD CLK NC NC NC NC NC NC NC NC

N NC VSSQ NC VCCQ VSSQ NC NC NC NC NC NC NC NC NC

P NC NC VCCQ VSSQ VCCQ VSSQ RFU NC NC RFU NC NC NC NC

Notes: 1. Some previous versions of the JEDEC product or mechanical specification had defined
reserved for future use (RFU) balls as no connect (NC) balls. NC balls assigned in the pre-
vious specifications could have been connected to ground on the system board. To ena-
ble new feature introduction, some of these balls are assigned as RFU in the v4.4 me-
chanical specification. Any new PCB footprint implementations should use the new ball
assignments and leave the RFU balls floating on the system board.
2. VCC, VCCQ, VSS, and VSSQ balls must all be connected on the system board.

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4GB, 8GB, 16GB: e·MMC

169-Ball Signal Assignments

169-Ball Signal Assignments

Figure 5: 169 Ball (Top View, Ball Down)

1 2 3 4 5 6 7 8 9 10 11 12 13 14

A NC NC NC NC

B NC NC

D NC NC

H NC NC DAT0 DAT1 DAT2 RFU RFU NC NC NC NC NC NC NC

J NC DAT3 DAT4 DAT5 DAT6 DAT7 NC NC NC NC NC NC NC NC

K NC VDDIM NC VSSQ RFU VCCQ NC NC NC NC NC NC NC NC

L NC NC NC NC NC NC NC

M NC NC NC RFU VCC VSS RFU RFU RFU NC NC NC

N NC NC NC VCC RFU NC NC NC

P NC NC RFU VSS RFU NC NC NC

R NC NC NC RFU VSS NC NC NC

T NC NC NC RFU VCC NC NC NC

U NC NC NC RST_n RFU RFU VSS VCC RFU NC NC NC

V NC NC NC NC NC NC

W NC NC NC VCCQ CMD CLK NC NC NC NC NC NC NC NC

Y NC VSSQ NC VCCQ VSSQ NC NC NC NC NC NC NC NC NC

AA NC NC VCCQ VSSQ VCCQ VSSQ RFU NC NC RFU NC NC NC NC

AB

AC

AD

AE NC NC

AF

AG NC NC

AH NC NC NC NC

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4GB, 8GB, 16GB: e·MMC

169-Ball Signal Assignments

Notes: 1. Empty balls do not denote actual solder balls; they are position indicators only.
2. Some previous versions of the JEDEC product or mechanical specification had defined
reserved for future use (RFU) balls as no connect (NC) balls. NC balls assigned in the pre-
vious specifications could have been connected to ground on the system board. To ena-
ble new feature introduction, some of these balls are assigned as RFU in the v4.4 me-
chanical specification. Any new PCB footprint implementations should use the new ball
assignments and leave the RFU balls floating on the system board.
3. VCC, VCCQ, VSS, and VSSQ balls must all be connected on the system board.

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 Micron Confidential and Proprietary

4GB, 8GB, 16GB: e·MMC

Package Dimensions

Package Dimensions

Figure 6: 153-Ball WFBGA – 11.5mm x 13.0mm x 0.8mm (Package Code: EA)

Seating plane

A 0.08 A

153X Ø0.319
Dimensions apply Ball A1 ID
to solder balls post- (covered by SR) Ball A1 ID
reflow on Ø0.30 SMD
ball pads. 14 12 10 8 6 4 2
13 11 9 7 5 3 1

A
B
C
D
E
6.5 CTR F
G
H
13 ±0.1 J
K
L
M
N
P

0.5 TYP

0.5 TYP 0.164 MIN

6.5 CTR 0.7 ±0.1

— 0.08
11.5 ±0.1

56X Ø0.27 test pads.

Ni/Au plated on pitch.
No solder balls.

Note: 1. Dimensions are in millimeters.

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4GB, 8GB, 16GB: e·MMC

Package Dimensions

Package Dimensions

Figure 7: 169-Ball VFBGA – 12.0mm x 16.0mm x 1.0mm (Package Code: DV)

Seating plane

A
0.08 A

169X Ø0.319 Ball A1 ID

Dimensions apply (covered by SR)
to solder balls post- Ball A1 ID
reflow on Ø0.30 SMD
14 12 10 8 6 4 2
ball pads. 13 11 9 7 5 3 1

A
B
C
D
E
F
G
H
J
K
L
16 ±0.1 M
6.5 CTR N
P
R
T
13.5 CTR U
V
W
Y
AA
AB
AC
AD
AE
AF
AG
AH

0.5 TYP 0.5 TYP 0.9 ±0.1

6.5 CTR 0.174 MIN
12 ±0.1
40X Ø0.325 on pitch.
Ni/Au-plated test pads.

Note: 1. Dimensions are in millimeters.

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4GB, 8GB, 16GB: e·MMC

Architecture

Architecture
Figure 8: e·MMC Functional Block Diagram

e·MMC

MMC VCC
controller VCCQ
RST_n
CMD Registers
DAT[7:0]
CLK
OCR CSD RCA
VDDIM
VSS1
CID ECSD DSR
VSSQ1

NAND Flash

Note: 1. VSS and VSSQ are internally connected.

MMC Protocol Independent of NAND Flash Technology

The MMC specification defines the communication protocol between a host and a de-
vice. The protocol is independent of the NAND Flash features included in the device.
The device has an intelligent on-board controller that manages the MMC communica-
tion protocol.
The controller also handles block management functions such as logical block alloca-
tion and wear leveling. These management functions require complex algorithms and
depend entirely on NAND Flash technology (generation or memory cell type).
The device handles these management functions internally, making them invisible to
the host processor.

Defect and Error Management

Micron e·MMC incorporates advanced technology for defect and error management. If
a defective block is identified, the device completely replaces the defective block with
one of the spare blocks. This process is invisible to the host and does not affect data
space allocated for the user.
The device also includes a built-in error correction code (ECC) algorithm to ensure that
data integrity is maintained.
To make the best use of these advanced technologies and ensure proper data loading
and storage over the life of the device, the host must exercise the following precautions:
• Check the status after WRITE, READ, and ERASE operations.
• Avoid power-down during WRITE and ERASE operations.

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4GB, 8GB, 16GB: e·MMC

OCR Register

OCR Register
The 32-bit operation conditions register (OCR) stores the V DD voltage profile of the card
and the access mode indication. In addition, this register includes a status information
bit.

Table 6: OCR Parameters

OCR Bits OCR Value Description

[31] 1b (ready)/0b (busy)1 Device power-on status bit
[30:29] 10b Sector mode
[28:24] 0 0000b Reserved
[23:15] 1 1111 1111b VDD: 2.7–3.6V range
[14:8] 000 0000b VDD: 2.0–2.7V range
[7] 1b VDD: 1.70–1.95V range
[6:0] 000 0000b Reserved

Note: 1. OCR = C0FF8080h after the device has completed power-up.

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4GB, 8GB, 16GB: e·MMC

CID Register

CID Register
The card identification (CID) register is 128 bits wide. It contains the device identifica-
tion information used during the card identification phase as required by e·MMC proto-
col. Each device is created with a unique identification number.

Table 7: CID Register Field Parameters

Name Field Width CID Bits CID Value

Manufacturer ID MID 8 [127:120] FEh
Reserved – 6 [119:114] –
Card/BGA CBX 2 [113:112] 01h
OEM/application ID OID 8 [111:104] 4Eh
Product name PNM 48 [103:56] P1xxxx
Product revision PRV 8 [55:48] –
Product serial number PSN 32 [47:16] –
Manufacturing date MDT 8 [15:8] –
CRC7 checksum CRC 7 [7:1] –
Not used; always 1 – 1 0 –

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4GB, 8GB, 16GB: e·MMC

CSD Register

CSD Register
The card-specific data (CSD) register provides information about accessing the device
contents. The CSD register defines the data format, error correction type, maximum da-
ta access time, and data transfer speed, as well as whether the DS register can be used.
The programmable part of the register (entries marked with W or E in the following ta-
ble) can be changed by the PROGRAM_CSD (CMD27) command.

Table 8: CSD Register Field Parameters

Size Cell CSD CSD

Name Field (Bits) Type1 Bits Value
CSD structure CSD_STRUCTURE 2 R [127:126] 03h
System specification version SPEC_VERS 4 R [125:122] 04h
Reserved2 – 2 – [121:120] –
Data read access time 1 TAAC 8 R [119:112] 4Fh
Data read access time 2 in CLK cycles NSAC 8 R [111:104] 01h
(NSAC × 100)
Maximum bus clock frequency TRAN_SPEED 8 R [103:96] 32h
Card command classes3 CCC 12 R [95:84] 0F5h
Maximum read data block length READ_BL_LEN 4 R [83:80] 09h
Partial blocks for reads supported READ_BL_PARTIAL 1 R [79] 0h
Write block misalignment WRITE_BLK_MISALIGN 1 R [78] 0h
Read block misalignment READ_BLK_MISALIGN 1 R [77] 0h
DSR implemented4 DSR_IMP 1 R [76] 1h
Reserved – 2 – [75:74] –
Device size C_SIZE 12 R [73:62] FFFh
Maximum read current at VDD,min VDD_R_CURR_MIN 3 R [61:59] 07h
Maximum read current at VDD,max VDD_R_CURR_MAX 3 R [58:56] 07h
Maximum write current at VDD,min VDD_W_CURR_MIN 3 R [55:53] 07h
Maximum write current at VDD,max VDD_W_CURR_MAX 3 R [52:50] 07h
Device size multiplier C_SIZE_MULT 3 R [49:47] 07h
Erase group size ERASE_GRP_SIZE 5 R [46:42] 1Fh
Erase group size multiplier ERASE_GRP_MULT 5 R [41:37] 1Fh
Write protect group size WP_GRP_SIZE 4GB 5 R [36:32] 07h
8GB 0Fh
16GB 1Fh
Write protect group enable WP_GRP_ENABLE 1 R [31] 1h
Manufacturer default ECC DEFAULT_ECC 2 R [30:29] 00h
Write-speed factor R2W_FACTOR 3 R [28:26] 02h
Maximum write data block length WRITE_BL_LEN 4 R [25:22] 09h
Partial blocks for writes supported WRITE_BL_PARTIAL 1 R [21] 0h
Reserved – 4 – [20:17] –
Content protection application CONTENT_PROT_APP 1 R [16] 0h

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4GB, 8GB, 16GB: e·MMC

CSD Register

Table 8: CSD Register Field Parameters (Continued)

Size Cell CSD CSD

Name Field (Bits) Type1 Bits Value
File-format group FILE_FORMAT_GRP 1 R/W [15] 0h
Copy flag (OTP) COPY 1 R/W [14] 0h
Permanent write protection PERM_WRITE_PROTECT 1 R/W [13] 0h
Temporary write protection TMP_WRITE_PROTECT 1 R/W/E [12] 0h
File format FILE_FORMAT 2 R/W [11:10] 00h
ECC ECC 2 R/W/E [9:8] 00h
CRC CRC 4GB 7 R/W/E [7:1] 47h
8GB 5Fh
16GB 6Fh
Reserved – 1 – [0] –

Notes: 1. R = Read-only;
R/W = One-time programmable and readable;
R/W/E = Multiple writable with value kept after a power cycle, assertion of the RST_n
signal, and any CMD0 reset, and readable
2. Reserved bits should be read as 0.
3. CM0 restriction: CMD0 (SW RESET) is not supported during programming command. If
SW RESET is issued during programming commands, a power cycle is required.
4. The IPEAK, max driving capability can be modified according to the actual capacitive load
on the e·MMC interface signals in the user application board, using CMD4. In HS200
mode, the driver strength value is set in EXT_CSD[185], using CMD6.

CMD4 Argument Driving Capability (mA)

0x01000000 4
0x02000000 8
0x04000000 12 (default)
0x08000000 16
0x10000000 20
0x20000000 24
0x40000000 28
0x80000000 32

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4GB, 8GB, 16GB: e·MMC

ECSD Register

ECSD Register
The 512-byte extended card-specific data (ECSD) register defines device properties and
selected modes. The most significant 320 bytes are the properties segment. This seg-
ment defines device capabilities and cannot be modified by the host. The lower 192
bytes are the modes segment. The modes segment defines the configuration in which
the device is working. The host can change the properties of modes segments using the
SWITCH command.

Table 9: ECSD Register Field Parameters

Size Cell ECSD ECSD

Name Field (Bytes) Type1 Bytes Value
Properties Segment
Reserved2 – 6 – [511:506] –
Extended security protocol EXT_SECURITY_ERR 1 R [505] 00h
Supported command sets S_CMD_SET 1 R [504] 01h
HPI features HPI_FEATURES 1 R [503] 03h
Background operations support BKOPS_SUPPORT 1 R [502] 01h
Max-packed read commands MAX_PACKED_READS 1 R [501] 3Ch
Max-packed write commands MAX_PACKED_WRITES 1 R [500] 3Ch
Data tag support DATA_TAG_SUPPORT 1 R [499] 01h
Tag unit size TAG_UNIT_SIZE 1 R [498] 03h
Tag resources size TAG_RES_SIZE 1 R [497] 00h
Context management capabilities CONTEXT_CAPABILITIES 1 R [496] 05h
Large unit size LARGE_UNIT_SIZE_M1 4GB 1 R [495] 03h
8GB 07h
16GB 07h
Extended partitions attribute support EXT_SUPPORT 1 R [494] 03h
Reserved – 241 – [493:253] –
Cache size CACHE_SIZE 4 R [252:249] 00000020h
Generic CMD6 timeout GENERIC_CMD6_TIME 1 R [248] 19h
Power-off notification (long) timeout POWER_OFF_LONG_TIME 1 R [247] FFh
Background operations status BKOPS_STATUS 1 R [246] 00h
Number of correctly programmed sec- CORRECTLY_PROG_SEC- 4 R [245:242] 00000000h
tors TORS_NUM
First initialization time after partition- INI_TIMEOUT_AP 1 R [241] 32h
ing (first CMD1 to device ready)
Reserved – 1 – [240] –
Power class for 52 MHz, DDR at 3.6V PWR_CL_DDR_52_360 1 R [239] 04h
Power class for 52 MHz, DDR at 1.95V PWR_CL_DDR_52_195 1 R [238] 09h
Power class for 200 MHz at 1.95V PWR_CL_200_195 1 R [237] 09h
Power class for 200 MHz, at 1.3V PWR_CL_200_130 1 R [236] 00h

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ECSD Register

Table 9: ECSD Register Field Parameters (Continued)

Size Cell ECSD ECSD

Name Field (Bytes) Type1 Bytes Value
Minimum write performance for 8-bit MIN_PERF_DDR_W_8_52 1 R [235] 00h
at 52 MHz in DDR mode
Minimum read performance for 8-bit at MIN_PERF_DDR_R_8_52 1 R [234] 00h
52 MHz in DDR mode
Reserved – 1 – [233] –
TRIM multiplier TRIM_MULT 1 R [232] 03h
Secure feature support SEC_FEATURE_SUPPORT 1 R [231] 55h
Secure erase multiplier SEC_ERASE_MULT 1 R [230] 06h
Secure trim multiplier SEC_TRIM_MULT 1 R [229] 09h
Boot information BOOT_INFO 1 R [228] 07h
Reserved – 1 – [227] –
Boot partition size BOOT_SIZE_MULT 4GB 1 R [226] 10h
8GB 10h
16GB 20h
Access size ACC_SIZE 4GB 1 R [225] 06h
8GB 07h
16GB 07h
High-capacity erase unit size HC_ERASE_GRP_SIZE 4GB 1 R [224] 08h
8GB 10h
16GB 10h
High-capacity erase timeout ERASE_TIMEOUT_MULT 1 R [223] 01h
Reliable write-sector count REL_WR_SEC_C 1 R [222] 01h
High-capacity write protect group size HC_WP_GRP_SIZE 1 R [221] 01h
Sleep current (VCC) S_C_VCC 1 R [220] 06h
Sleep current (VCCQ) S_C_VCCQ 1 R [219] 09h
Reserved – 1 – [218] –
Sleep/awake timeout S_A_TIMEOUT 1 R [217] 10h
Reserved – 1 – [216] –
Sector count SEC_COUNT 4GB 4 R [215:212] 00734000h
8GB 00E68000h
16GB 01CD0000h
Reserved – 1 – [211] –
Minimum write performance for 8-bit MIN_PERF_W_8_52 1 R [210] 08h
at 52 MHz
Minimum read performance for 8-bit at MIN_PERF_R_8_52 1 R [209] 08h
52 MHz
Minimum write performance for 8-bit MIN_PERF_W_8_26_4_52 1 R [208] 08h
at 26 MHz and 4-bit at 52 MHz

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ECSD Register

Table 9: ECSD Register Field Parameters (Continued)

Size Cell ECSD ECSD

Name Field (Bytes) Type1 Bytes Value
Minimum read performance for 8-bit at MIN_PERF_R_8_26_4_52 1 R [207] 08h
26 MHz and 4-bit at 52 MHz
Minimum write performance for 4-bit MIN_PERF_W_4_26 1 R [206] 08h
at 26 MHz
Minimum read performance for 4-bit at MIN_PERF_R_4_26 1 R [205] 08h
26 MHz
Reserved – 1 – [204] –
Power class for 26 MHz at 3.6V PWR_CL_26_360 1 R [203] 02h
Power class for 52 MHz at 3.6V PWR_CL_52_360 1 R [202] 02h
Power class for 26 MHz at 1.95V PWR_CL_26_195 1 R [201] 05h
Power class for 52 MHz at 1.95V PWR_CL_52_195 1 R [200] 05h
Partition switching timing PARTITION_SWITCH_TIME 1 R [199] 03h
Out-of-interrupt busy timing OUT_OF_INTERRUPT_TIME 1 R [198] 0Ah
I/O driver strength DRIVER_STRENGTH 1 R [197] 0Fh
Card type CARD_TYPE 1 R [196] 17h
Reserved – 1 – [195] –
CSD structure version CSD_STRUCTURE 1 R [194] 02h
Reserved – 1 – [193] –
Extended CSD revision EXT_CSD_REV 1 R [192] 06h
Modes Segment
Command set CMD_SET 1 R/W/E_P [191] 00h
Reserved – 1 – [190] –
Command set revision CMD_SET_REV 1 R [189] 00h
Reserved – 1 – [188] –
Power class POWER_CLASS 1 R/W/E_P [187] 00h
Reserved – 1 – [186] –
High-speed interface timing4 HS_TIMING 1 R/W/E_P [185] 00h
Reserved – 1 – [184] –
Bus width mode BUS_WIDTH 1 W/E_P [183] 00h
Reserved – 1 – [182] –
Erased memory content ERASED_MEM_CONT 1 R [181] 00h
Reserved – 1 – [180] –
Partition configuration PARTITION_CONFIG 1 R/W/E, [179] 00h
R/W/E_P
Boot configuration protection BOOT_CONFIG_PROT 1 R/W, [178] 00h
R/W/C_P
Boot bus width BOOT_BUS_WIDTH 1 R/W/E [177] 00h
Reserved – 1 – [176] –

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ECSD Register

Table 9: ECSD Register Field Parameters (Continued)

Size Cell ECSD ECSD

Name Field (Bytes) Type1 Bytes Value
High-density erase group definition ERASE_GROUP_DEF 1 R/W/E_P [175] 00h
Boot write protection status registers BOOT_WP_STATUS 1 R [174] 00h
Boot area write protection register BOOT_WP 1 R/W, [173] 00h
R/W/C_P
Reserved – 1 – [172] –
User write protection register USER_WP 1 R/W, [171] 00h
R/W/C_P,
R/W/E_P
Reserved – 1 – [170] –
Firmware configuration FW_CONFIG 1 R/W [169] 00h
RPMB size RPMB_SIZE_MULT 1 R [168] 01h
Write reliability setting register3 WR_REL_SET 1 R/W [167] 00h
Write reliability parameter register WR_REL_PARAM 1 R [166] 05h
SANITIZE START operation SANITIZE_START 1 W/E_P [165] 00h
Manually start background operations BKOPS_START 1 W/E_P [164] 00h
Enable background operations hand- BKOPS_EN 1 R/W [163] 00h
shake
Hardware reset function RST_n_FUNCTION 1 R/W [162] 00h
HPI management HPI_MGMT 1 R/W/E_P [161] 00h
Partitioning support PARTITIONING_SUPPORT 1 R [160] 07h
Maximum enhanced area size MAX_ENH_SIZE_MULT 3 R [159:157] 0001CDh
Partitions attribute PARTITIONS_ATTRIBUTE 1 R/W [156] 00h
Partitioning setting PARTITION_SETTING_COMPLETED 1 R/W [155] 00h
General-purpose partition size GP_SIZE_MULT_GP3 12 R/W [154:152] 000000h
GP_SIZE_MULT_GP2 [151:149] 000000h
GP_SIZE_MULT_GP1 [148:146] 000000h
GP_SIZE_MULT_GP0 [145:143] 000000h
Enhanced user data area size ENH_SIZE_MULT 3 R/W [142:140] 000000h
Enhanced user data start address ENH_START_ADDR 4 R/W [139:136] 00000000h
Reserved – 1 – [135] –
Bad block management mode SEC_BAD_BLK_MGMNT 1 R/W [134] 00h
Reserved – 1 – [133] –
Package case temperature is controlled TCASE_SUPPORT 1 W/E_P [132] 00h
Periodic wake-up PERIODIC_WAKEUP 1 R/W/E [131] 00h
Program CID/CSD in DDR mode support PROGRAM_CID_CSD_DDR_SUP- 1 R [130] 01h
PORT
Reserved – 2 TBD [129:128] TBD
Vendor specific fields VENDOR_SPECIFIC_FIELD 64 <vendor [127:64] TBD
specific>

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ECSD Register

Table 9: ECSD Register Field Parameters (Continued)

Size Cell ECSD ECSD

Name Field (Bytes) Type1 Bytes Value
Native sector size NATIVE_SECTOR_SIZE 1 R [63] 00h
Sector size emulation USE_NATIVE_SECTOR 1 R/W [62] 00h
Sector size DATA_SECTOR_SIZE 1 R [61] 00h
1st initialization after disabling sector INI_TIMEOUT_EMU 1 R [60] 0Ah
size emulation
Class 6 commands control CLASS_6_CTRL 1 R/W/E_P [59] 00h
Number of addressed group to be re- DYNCAP_NEEDED 1 R [58] 00h
leased
Exception events control EXCEPTION_EVENTS_CTRL 2 R/W/E_P [57:56] 00h
Exception events status EXCEPTION_EVENTS_STATUS 2 R [55:54] 00h
Extended partitions attribute EXT_PARTITIONS_ATTRIBUTE 2 R/W [53:52] 00h
Context configuration CONTEXT_CONF 15 R/W/E_P [51:37] 00h
Packed command status PACKED_COMMAND_STATUS 1 R [36] 00h
Packed command failure index PACKED_FAILURE_INDEX 1 R [35] 00h
Power-off notification POWER_OFF_NOTIFICATION 1 R/W/E_P [34] 00h
Control to turn the Cache ON/OFF CACHE_CTRL 1 R/W/E_P [33] 00h
Flushing of the cache FLUSH_CACHE 1 W/E_P [32] 00h
Reserved – 32 TBD [31:0] –

Notes: 1. R = Read-only;
R/W = One-time programmable and readable;
R/W/E = Multiple writable with the value kept after a power cycle, assertion of the
RST_n signal, and any CMD0 reset, and readable;
R/W/C_P = Writable after the value is cleared by a power cycle and assertion of the
RST_n signal (the value not cleared by CMD0 reset) and readable;
R/W/E_P = Multiple writable with the value reset after a power cycle, assertion of the
RST_n signal, and any CMD0 reset, and readable;
W/E_P = Multiple writable with the value reset after power cycle, assertion of the RST_n
signal, and any CMD0 reset, and not readable
2. Reserved bits should be read as 0.
3. Micron has tested power failure under best-application knowledge conditions with posi-
tive results. Customers may request a dedicated test for their specific application condi-
tion. Micron set this register during factory test and used the one-time programming
option.
4. tIH parameter in HS200 is 1.4ns. Refer to the JEDEC specification for the output timing
diagram.

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DC Electrical Specifications – Device Power

DC Electrical Specifications – Device Power

The device current consumption for various device configurations is defined in the
power class fields of the ECSD register.
VCC is used for the NAND Flash device and its interface voltage; V CCQ is used for the
controller and the e·MMC interface voltage.

Figure 9: Device Power Diagram

VCC
C3 C4

VCCQ
C1 C2

RST_n
Core regulator
NAND NAND Flash
VDDIM control signals
C5 C6
I/O block

I/O block
NAND
MMC

CLK
Core NAND
CMD
logic block
data bus

VCCQ
DAT[7:0]

MMC controller
VCCQ

Table 10: Absolute Maximum Ratings

Parameters Symbol Min Max Unit

Voltage input VIN –0.6 4.6 V
VCC supply VCC –0.6 4.6 V
VCCQ supply VCCQ –0.6 4.6 V

Table 11: Power Domains

Parameter Symbol Comments

Host interface VCCQM High voltage range = 3.3V (nominal)
Low voltage range = 1.8V (nominal)
Memory VCCM High voltage range = 3.3V (nominal)
Internal VDDIM The internal regulator connection to an external decoupling capacitor

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DC Electrical Specifications – Device Power

Table 12: Capacitor and Resistance Specifications

Parameter Symbol Min Max Typ Units Notes

Pull-up resistance: CMD R_CMD 4.7 50 10 kΩ 1
Pull-up resistance: DAT[7:0] R_DAT 10 50 50 kΩ 1
Pull-up resistance: RST_n R_RST_n 4.7 50 50 kΩ 2
CLK/CMD/DAT[7:0] impedance 45 55 50 Ω 3
Serial resistance on CLK SR_CLK 0 47 22 Ω
VCCQ capacitor C1 2.2 4.7 2.2 µF 4
C2 0.1 0.22 0.1
VCC capacitor (≤8GB) C3 2.2 4.7 2.2 µF 5
C4 0.1 0.22 0.1
VCC capacitor (>8GB) C3 2.2 4.7 4.7 µF 5
C4 0.1 0.22 0.22
VDDIM capacitor (Creg) C5 1 4.7 1 µF 6
C6 0.1 0.1 0.1

Notes: 1. Used to prevent bus floating.

2. If host does not use H/W RESET (RST_n), pull-up resistance is not needed on RST_n line
(Extended_CSD[162] = 00h).
3. Impedance match.
4. The coupling capacitor should be connected with VCCQ and VSSQ as closely as possible.
5. The coupling capacitor should be connected with VCC and VSS as closely as possible.
6. The coupling capacitor should be connected with VDDIM and VSS as closely as possible.

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Revision History

Revision History
Rev. F – 06/14
• Added the 153-Ball Signal Assignment figure

Rev. E – 06/14
• Changed the tIH value from 1.0ns to 1.4ns.

Rev. D – 04/14
• Added the "Absolute Maximum Ratings" table to the DC Electrical Specifications sec-
tion

Rev. C – 02/14
• Removed "Preliminary" from the document and promoted to "Production" status

Rev. B – 11/13
• Added MTFC16GAAAADV-2M WT to the subtitle
• Added "16MB" columns and specs to the Performance and Current Consumption ta-
bles
• Added the MTFC16GAAAADV-2M WT specific information to the Ordering Informa-
tion table
• Added the 169 ball Signal Assignments figure and the169 ball Package Dimensions fig-
ure
• Added 16MB specifications to the CSD and ECSD register tables

Rev. A – 10/13
• Initial release

8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900

www.micron.com/productsupport Customer Comment Line: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.

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