INTEGRATED CIRCUITS

DATA SHEET

TEA5762
Self Tuned Radio (STR)
Product specification 1999 Aug 04
Supersedes data of 1995 Jun 23
File under Integrated Circuits, IC01
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

FEATURES • High impedance MOSFET input on AM

• The tuning system has an optimized IC partitioning both • Wide supply voltage range of 2.5 to 12 V
from application (omitting interferences) and flexibility • Low current consumption 18 mA at AM and FM
(removable front panel option) point of view: the tuning (including tuning synthesizer for AM)
synthesizer is on-chip with the radio
• Low noise figure
• The tuning quality is superior and requires no IF-counter • Low output distortion
for stop-detection; it is insensitive to ceramic filter
tolerances • Due to the new tuning concept, the tuning is
independent of the channel spacing.
• In combination with the microcontroller, fast, low-power
operation of preset mode, manual-search, auto-search
and auto-store are possible GENERAL DESCRIPTION
• The local (internal) controller function facilitates reduced The TEA5762 is a 44-pin integrated AM-radio and FM-IF
and simplified microcontroller software and demodulator part including a novel tuning concept.
• The high integration level means fewer external The radio part is based on the TEA5712.
components with regard to the communication between It is designed for the use with an external FM front-end.
the radio and the microcontroller and a simple and small
Printed-Circuit Board (PCB) The new tuning concept combines the advantages of hand
tuning with electronic facilities and features. User
• The inherent FUZZY LOGIC behaviour of the Self
‘intelligence’ is incorporated into the tuning algorithm and
Tuned Radio (STR), which mimics hand tuning and
an improvement of the analog signal processing is used for
yields a potentially fast yet reliable tuning operation
the AFC function.
• The level of the incoming signal at which the radio must
lock is software programmable
• Two programmable ports
• FM-on/off port to control the external FM front-end
• High selectivity with distributed IF gain
• Soft mute
• Signal dependent stereo-blend

ORDERING INFORMATION

TYPE PACKAGE
NUMBER NAME DESCRIPTION VERSION
TEA5762H QFP44 plastic quad flat package; 44 leads (lead length 1.3 mm); SOT307-2
body 10 × 10 × 1.75 mm

1999 Aug 04 2
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCC1 supply voltage 2.5 − 12 V
VCC2 supply voltage for tuning − − 12 V
Vtune tuning voltage 0.7 − VCC2 − 0.75 V
ICC1 supply current AM mode 12 15 18 mA
FM mode 13 16 19 mA
IDD supply current AM mode − 3.3 − mA
FM mode − 2.7 − mA
ICC2 supply current for tuning in preset − − 800 µA
mode (band-end to band-end)
Tamb ambient temperature −15 − +60 °C
AM performance; note 1
V10 AF output voltage Vi1 = 5 mV 36 45 70 mV
Vi1 RF sensitivity input voltage S/N = 26 dB 40 55 70 µV
THD total harmonic distortion Vi1 = 1 mV − 0.8 2.0 %
FM performance; note 2
V10 AF output voltage Vi4 = 5 mV 40 48 57 mV
Vi4 IF sensitivity input voltage V10 = −3 dB; V10 = 0 dB − 20 30 µV
at Vi4 = 10 mV
THD total harmonic distortion IF filter − 0.3 0.8 %
SFE10.7MS3A20K-A
MPX performance; note 3
αcs channel separation Vi4 = 30 mV 26 30 − dB

Notes
1. VCC1 = 3 V; VCC2 = 12 V; VDDD = 3 V; fi = 1 MHz; m = 0.3; fmod = 1 kHz; measured in Fig.9 with S1 in position A; S2
in position B; unless otherwise specified.
2. VCC1 = 3 V; VCC2 = 12 V; VDDD = 3 V; fi = 10.7 MHz; ∆fm = 22.5 kHz; fm = 1 kHz; measured in Fig.9 with S2 in
position A; S3 in position A; unless otherwise specified.
3. VCC1 = 3 V; VCC2 = 12 V; VDDD = 3 V; Vi3(L + R) = 155 mV; Vpilot = 15.5 mV; fi = 1 kHz; measured in Fig.9 with S2 in
position B; S3 in position B; unless otherwise specified.

1999 Aug 04 3
 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...

1999 Aug 04

BLOCK DIAGRAM

Philips Semiconductors
Self Tuned Radio (STR)
FM-IFI2 DATA
WRITE- BUS-
FM-IFI1 FM-IFO1 ENABLE CLOCK IFGND FMDEM FSI

37 35 33 29 28 27 17 18 21

16
PILFIL
39 TUNER FM FM FM PILOT
FM-ON/OFF
SWITCH IF1 IF2 DETECTOR DETECTOR
MO/ST
24
19 kHz
12
LFI
VSTAB(A) 38 PLL
VSTAB(B) 34 VCO
AM/FM 9
7
VCC1 STATUS INDICATOR 38 kHz
SHIFT REGISTER
STABILIZER REGISTER
23 DECODER
VDDD
RIPPLE 1 up IN-LOCK stereo
down DETECTOR 14
AFLO
5 LAST-STATION level
COUNTI MATRIX
PRESCALER MEMORY
AFRO
4 15
stereo mono
FM SEQUENTIAL
4

CHARGE
PROGRAMMABLE AM CIRCUIT PUMP SDS 13
CGND MULTIPLEXER MUTE
COUNTER MUTE
hard mute level
25
XTAL
CRYSTAL WINDOW
AFC
26 OSCILLATOR DETECTOR
TEA5762

DGND 19
AFC(n)
20
AFC(p)
32
AFC
AM
2 AM AM AM AM V/I
AM-RFI FRONT AGC
OSCILLATOR MIXER IF DETECTOR CONVERTER
END

6 40 41 36 44 31 30 8 22 10 42 11 3 MBE815

Product specification
handbook, full pagewidth

TEA5762
AMOSC AM-MIXER AM-IFI/O2 AGC P1 P0 TUNE AFO RFGND MPXI RFGND

AM-IFI1 VCC2

Fig.1 Block diagram.

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

PINNING

SYMBOL PIN DESCRIPTION

RIPPLE 1 ripple capacitor input
AM-RFI 2 AMRF input
RFGND 3 RF ground and substrate
CGND 4 counter ground
COUNTI 5 counter input
AMOSC 6 parallel tuned AM-oscillator circuit to ground
VCC1 7 supply voltage
TUNE 8 tuning output current
VCO 9 voltage controlled oscillator input
AFO 10 AM/FM AF output (output impedance typical 5 kΩ)
MPXI 11 stereo decoder input (input impedance typical 150 kΩ)
LFI 12 loop filter input
MUTE 13 mute input
AFLO 14 left channel output (output impedance typical 4.3 kΩ)
AFRO 15 right channel output (output impedance typical 4.3 kΩ)
PILFIL 16 pilot detector filter input
IFGND 17 ground of IF, detector and MPX stage
FMDEM 18 ceramic discriminator input
AFC(n) 19 AFC negative output
AFC(p) 20 AFC positive output
FSI 21 field strength indicator
VCC2 22 supply voltage for tuning
VDDD 23 digital supply voltage
MO/ST 24 mono/stereo and tuning indication output
XTAL 25 crystal input
DGND 26 digital ground
BUS-CLOCK 27 bus-clock input
DATA 28 bus data input/output
WRITE-ENABLE 29 bus write-enable input
P0 30 programmable output port (P0)
P1 31 programmable output port (P1)
AFC 32 450 kHz LC-input circuit for AM AFC
FM-IFI2 33 FMIF input 2 (input impedance typical 330 Ω)
VSTAB(B) 34 internal stabilized supply voltage (B)
FM-IFO1 35 FMIF output 1 (input impedance typical 330 Ω)
AM-IFI/O2 36 input/output to IFT; output: current source
FM-IFI1 37 FMIF input 1 (input impedance typical 330 Ω)
VSTAB(A) 38 internal stabilized supply voltage (A)
FM-ON/OFF 39 FM ON/OFF port
AM-MIXER 40 open-collector output to IFT

1999 Aug 04 5
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

SYMBOL PIN DESCRIPTION

AM-IFI1 41 IFT or ceramic filter input (input impedance typical 3 kΩ)
RFGND 42 FMRF ground
n.c. 43 not connected
AGC 44 AGC capacitor input

39 FM-ON/OFF

handbook, full pagewidth

40 AM-MIXER

36 AM-IFI/O2
38 VSTAB(A)

34 VSTAB(B)
35 FM-IFO1
42 RFGND

41 AM-IFI1

37 FM-IFI1
44 AGC

43 n.c.

RIPPLE 1 33 FM-IFI2

AM-RFI 2 32 AFC

RFGND 3 31 P1

CGND 4 30 P0

COUNTI 5 29 WRITE-ENABLE
TEA5762H
AMOSC 6 28 DATA

VCC1 7 27 BUS-CLOCK

TUNE 8 26 DGND

VCO 9 25 XTAL

AFO 10 24 MO/ST

MPXI 11 23 VDDD
LFI 12

MUTE 13

AFLO 14

AFRO 15

PILFIL 16

IFGND 17

FMDEM 18

AFC(n) 19

AFC(p) 20

FSI 21

VCC2 22

MBE820

Fig.2 Pin configuration.

1999 Aug 04 6
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

FUNCTIONAL DESCRIPTION PRESET OPERATION

The TEA5762 is an integrated radio circuit with In preset mode, the microcontroller has to load information
AM-receiver and FM-IF part with demodulator and stereo such as frequency band, frequency and mono/stereo. This
decoder. The circuit includes digital tuning and control information has to be sent via the bus to the STR.
functions. The internal algorithm controls the tuning sequence as
follows:
The radio 1. The information is loaded into a shift register, a
The AM circuit incorporates a double balanced mixer, a last-station memory and the counter.
one-pin low-voltage oscillator (up to 30 MHz) and is 2. The Automatic Frequency Control (AFC) is switched
designed for distributed selectivity. off.
The AM input is designed to be connected to the top of a 3. The counter starts counting the VCO frequency and
tuned circuit. AGC controls the IF amplification and for the tuning voltage is varied until the desired frequency
large signals it lowers the input impedance of the AM roughly equals the real frequency.
front-end. 4. The AFC is then switched on and the counter is
The first AM selectivity can be an IF-Tank (IFT) as well as switched off.
an IFT combined with a ceramic filter; the second one is an 5. The real frequency is more precisely tuned to the
IFT. desired frequency.
For FM operation an external FM front-end is necessary. After the AFC has tuned the real frequency to the desired
This is switched on and off by the FM-ON/OFF signal frequency an in-lock signal can be generated. In order to
which is generated in the bus system. get a reliable in-lock signal, there are two parameters
measured: the field strength and the S-curve. The field
The AFC circuit in the TEA5762 provides a tuning voltage
strength indicates the strength of the station and by
to drive the VCO of the external FM front-end.
looking at the S-curve the system can distinguish false
The frequency of the external VCO is counted in the Self in-locks from real in-locks (false in-locks occur on the
Tuned Radio (STR) tuning system. wrong slope of the S-curve).
The FM-IF circuit is designed for distributed IF ceramic In the FM mode the tuning voltage controls the VCO of the
filters. The FM quadratic detector uses a ceramic external FM front-end and the frequency of the VCO is
resonator. counted in the TEA5762.
The PLL stereo decoder incorporates a signal dependent In the event of fading or pulling the in-lock signal becomes
stereo-blend circuit and a soft-mute circuit. logic 0 and the synthesizer will be switched-on again and
the algorithm will be repeated.
Tuning
SEARCH OPERATION
The tuning-concept of Self Tuned Radio (STR) is based on
FUZZY LOGIC: it mimics hand tuning (hand tuning is a During a search operation, the only action the
combination of coarse and fine tuning to the qualitatively microcontroller has to take is: sending the desired band
best frequency position). As a consequence the tuning plus the direction and the search sensitivity level to the
system is very fast. STR. The search operation is performed by the charge
pump until an in-lock signal is generated (combination of
The tuning algorithm, which is controlled by the sequential
measuring the field strength and the S-curve). The AFC
circuit (see Fig.1), is completely integrated; so there are
then fine tunes to the station. The frequency belonging to
only a few external components needed.
the found station will be counted by the counter and written
The bus and the microcontroller can be kept very simple. into the last-station memory and the shift register of the
The bus only consists of three wires (BUS-CLOCK, DATA counter. At this time the frequency is available in the shift
and WRITE-ENABLE). The microcontroller must basically register and can be read by the microcontroller. The
give two instructions: microcontroller decides whether the frequency is within the
• Preset operation desired frequency band. If so, this frequency can be stored
under a preset and if not, a new search action should be
• Search operation. started.

1999 Aug 04 7
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

To ensure that the search function operates correctly These three signals, together with the mono/stereo pin
under all conditions the following search sequence must (MO/ST; pin 24), communicate with the microcontroller.
be applied: The mono/stereo indicator has two functions, which are
• Store the current frequency in the memory controlled by the BUS-CLOCK, as shown in Table 2.
• Issue the search command
Table 2 Bus-clock functions
• Wait for data valid and read the new frequency
BUS-CLOCK MO/ST (PIN 24) RESULT
• If the new frequency is the same as the stored
frequency, issue a pre-set step (e.g. 50 kHz) and start LOW LOW stereo
the search sequence again. LOW HIGH mono
HIGH LOW tuned
Description of the bus
HIGH HIGH not tuned
The TEA5762 radio has a bus which consists of three
wires, as shown in Table 1.
The TEA5762 has a 25-bit shift register; see Table 3 for an
explanation of the shift register bits.
Table 1 Bus signals
If in search mode no transmitter can be found, all
SIGNAL DESCRIPTION PIN
frequency bits of the shift register are set to logic 0.
BUS-CLOCK software driven clock input 27
The bus protocol is depicted in Figs 3 and 4.
DATA data input/output 28
WRITE-ENABLE write/read-input 29

Table 3 Explanation of the shift register bits

LOGIC
BIT DESCRIPTION RESULT
STATE
S.24 (MSB) search start/end 0 after a search when a station is found or after a preset
1 during the search action
D.23 search up/down 0 indicates if the radio has to search down
1 indicates if the radio has to search up
M.22 mono/stereo 0 stereo is allowed
1 mono is required (radio switched to forced mono)
B0.21 band see Table 4 selects FM/MW/LW/SW band
B1.20 band see Table 4 selects FM/MW/LW/SW band
P0.19 port note 1 user programmable bits which e.g. can be used as band
switch driver
P1.18 port note 1 user programmable bits which e.g. can be used as band
switch driver
S0.17 search-level of station see Table 5 determines the locking field strength during an
automatic search, automatic store or manual search
S1.16 search-level of station see Table 5 determines the locking field strength during an
automatic search, automatic store or manual search
15 dummy − buffer
F.14 to F.0 (LSB) frequency − determine the tuning frequency of the radio; see Table 6
for the bit values

1999 Aug 04 8
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

Note Table 6 Values for bits 14 to 0

1. The output pins 30 and 31 can drive currents up to FM AM
5 mA; bits 19 (P0) and 18 (P1) control the output BIT BIT VALUE VALUE(1) VALUE(2)
voltage of the control pins P0 (pin 30) and P1 (pin 31): (kHz) (kHz)
a) Bit 19 (P0) LOW sets P0 (pin 30) to LOW. 14 214 − 16384
b) Bit 19 (P0) HIGH sets P0 (pin 30) to HIGH. 13 213 102400 8192
c) Bit 18 (P1) LOW sets P1 (pin 31) to LOW. 12 212 51200 4096
d) Bit 18 (P1) HIGH sets P1 (pin 31) to HIGH. 11 211 25600 2048
10 210 12800 1024
Table 4 Truth table for bits 21 and 20
9 29 6400 512
B0 B1 BAND SELECT 8 28 3200 256
0 0 FM(1) 7 27 1600 128
0 1 MW 6 26 800 64
1 0 LW 5 25 400 32
1 1 SW 4 24 200 16
Note 3 23 100 8
1. When FM is selected, the control output FM-ON/OFF 2 22 50 4
is set LOW to switch on the external FM front-end. 1 21 25 2
0 20 12.5 1
Table 5 Truth table for bits 16 and 17
Notes
SIGNAL RECEPTION(1)
1. FM value of the affected oscillators:
S1 S0 FM IF INPUT AM RF INPUT FM VALUE = FMRF + FMIF.
(µV) (µV)
2. AM value of the affected oscillators:
0 0 >50 >28 AM VALUE = AMRF + AMIF.
0 1 >100 >40
1 0 >300 >63
1 1 >1500 >1000

Note
1. The given values for signal reception are
corresponding to a −3 dB point of 20 µV for FM.

1999 Aug 04 9
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

READING DATA WRITING DATA

While WRITE-ENABLE is LOW data can be read by the While WRITE-ENABLE is HIGH the microcontroller can
microcontroller. At a rising edge of the BUS-CLOCK, data transmit data to the TEA5762 (hard mute is active). At a
is shifted out of the register. This data is available from the rising edge of the BUS-CLOCK, the register shifts and
point where the BUS-CLOCK is HIGH until the next rising accepts one bit into LSB. At clock LOW the microcontroller
edge of the BUS-CLOCK occurs (see Fig.3). writes data (see Fig.4).
To read the entire shift register 24 clock pulses are To write the entire shift register 25 clock pulses are
necessary. necessary.

handbook, full pagewidth

WRITE-ENABLE

data read

BUS-CLOCK

DATA

data available
data available after search ready data shift MBE817
MSB is LOW

Fig.3 Read data.

handbook, full pagewidth

WRITE-ENABLE

BUS-CLOCK

DATA

MBE818
data shift data change

Fig.4 Write data.

1999 Aug 04 10
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

BUS TIMING

handbook, full pagewidth

WRITE-ENABLE

VIH
BUS-CLOCK
VIL

t HIGH t LOW

DATA

MBE819
t da

Fig.5 Bus timing.

Table 7 Digital inputs

SYMBOL PARAMETER MIN. MAX. UNIT
Digital inputs
VIH HIGH-level input voltage 1.4 − V
VIL LOW-level input voltage − 0.6 V
Timing
fclk clock input − 300 kHz
tHIGH clock HIGH time 1.67 − µs
tLOW clock LOW time 1.67 − µs
tda shift register available after ‘search ready’ − 14 µs

1999 Aug 04 11
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC1 supply voltage 0 13.2 V
Ptot total power dissipation Tamb = 70 °C − 250 mW
Tstg storage temperature −65 +150 °C
Tamb operating ambient temperature −15 +60 °C
Tj operating junction temperature −15 +150 °C
Ves electrostatic handling for all pins note 1 − ±200 V

Note
1. Charge device model; equivalent to discharging a 200 pF capacitor via a 0 Ω series resistor.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient in free air 65 K/W

1999 Aug 04 12
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

CHARACTERISTICS
VCC1 = 3 V; Tamb = 25 °C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCC1 supply voltage 2.5 − 12 V
VCC2 supply voltage for tuning − − 12 V
VDDD supply voltage for digital part 2.5 − 12 V
Vtune tuning voltage 0.7 − VCC2 − 0.75 V
ICC2 supply current for tuning in preset − − 800 µA
mode (band-end to band-end)
fBUS-CLOCK(max) maximum BUS-CLOCK frequency − − 300 kHz
ICC1 current consumption during acquisition AM mode 12 15 18 mA
of VCC1 FM mode 12.5 15.5 18.5 mA
IDD current consumption during acquisition AM mode − 4.8 − mA
of IDD FM mode − 5.5 − mA
ICC1 current consumption after acquisition AM mode 12 15 18 mA
of VCC1 FM mode 13 16 19 mA
IDD current consumption after acquisition AM mode − 3.2 − mA
of IDD FM mode − 2.7 − mA
tsearch synthesizer auto-search time for empty FM mode − − 10 s
band
tacq synthesizer preset acquisition time FM − 100 − ms
between two band limits MW − 100 − ms
LW − 200 − ms
SW − 500(1) − ms
fband frequency band range of the AM mode 0.144 − 30 MHz
synthesizer
∆fFM AFC inaccuracy of FM with Mitsumi − − 1 kHz
front-end
∆fAM AFC inaccuracy of AM − − 100 Hz
IP0/P1(sink) sink current of software programmable VCC1 = 5 V 4 6 − mA
output P0/P1
IP0/P1(source) source current of software VCC1 = 5 V 5 9 − mA
programmable output P0/P1

Note
1. Depending on band.

1999 Aug 04 13
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

AM CHARACTERISTICS
Input frequency = 1 MHz; m = 0.3; fmod = 1 kHz; measured in test circuit at pin 10 (see Fig.9); S2 in position B;
Vi1 measured at input of matching network at pin 2; matching network adjusted to maximum output voltage at low input
level; refer to test circuit (see Fig.9); unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V10 AF output voltage Vi1 = 5 mV 36 45 70 mV
Vi1 RF sensitivity S/N = 26 dB 40 55 70 µV
Vil large signal voltage handling m = 0.8; THD ≤ 8% 150 300 − mV
capacity
PSRR power supply ripple rejection ∆V7 = 100 mV (RMS); − −47 − dB
V 10  100 Hz; V7 = 3.0 V
 ----------
 ∆V 7

Ii input current (pin 2) V44 = 0.2 V − 0 − µA

Ci input capacitance (pin 2) V44 = 0.2 V − − 4 pF
Gc front-end conversion gain V44 = 0.2 V 5 10 14 dB
V44 = 0.9 V −26 −14 0 dB
S/N signal-to-noise ratio − 50 − dB
THD total harmonic distortion Vi1 = 1 mV − 0.8 2.0 %
α450 IF suppression V10 = 30 mV − 56 − dB

FM-IF CHARACTERISTICS
Input frequency = 10.7 MHz; ∆f = 22.5 kHz; fmod = 1 kHz; measured in test circuit (see Fig.9) at pin 10; S2 in position B;
refer to test circuit (see Fig.9); unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V10 AF output voltage Vi4 = 10 mV 40 48 57 mV
Vi4 IF limiting sensitivity V10 = −3 dB; V10 = 0 dB at − 50 80 µV
Vi4 = 10 mV
PSRR power supply ripple rejection ∆V7 = 100 mV (RMS); −44 − − dB
V 10  100 Hz; V7 = 3.0 V
 ----------
 ∆V 7

S/N signal-to-noise ratio Vi4 = 10 mV 62 − − dB

THD total harmonic distortion IF filter SFE10.7MS3A20K-A − 0.3 0.8 %

1999 Aug 04 14
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

STEREO DECODER CHARACTERISTICS

Vi3(L + R) = 155 mV; Vpilot = 15.5 mV; f = 1 kHz; apply unmodulated RF-signal of 100 mV to front-end to set radio to
maximum channel separation; soft mute off (S4 in position A); unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V14/15 AF output voltage − 160 − mV
Vpilot(s) switch to stereo − 8 12 mV
Vpilot(m) switch to mono 2 5 − mV
VAF-L/Vi3 MPX voltage gain −1.5 − +1.5 dB
S/N signal-to-noise ratio Vpilot = 15.5 mV (stereo) − 74 − dB
THD total harmonic distortion − 0.5 1.0 %
αcs channel separation 26 30 − dB
α19 carrier and harmonic suppression 19 kHz (200 mV) = 0 dB 27 32 − dB
α38 38 kHz 16 21 − dB
α stereo-blend Vi4 = 5 mV 22 30 − dB
Vi4 = 200 µV − 1 2 dB
mute(s) soft mute depth Vi4 = 30 µV; V14 = V15 −1 0 − dB
Vi4 = 10 µV; V14 = V15 − −6 −10 dB

TUNING CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VFM FM voltage levels α−3 dB-point at Vi4 = 20 µV
high (auto-store/search) S0 = 1; S1 = 1 600 1500 5000 µV
medium (auto-store/search) S0 = 0; S1 = 1 100 300 550 µV
low (auto-store/search) S0 = 1; S1 = 0 40 100 200 µV
nominal (preset mode/tuning indication) S0 = 0; S1 = 0 30 50 90 µV
VAM AM voltage levels α−3 dB-point at Vi4 = 20 µV
high (auto-store/search) S0 = 1; S1 = 1 400 1000 2500 µV
medium (auto-store/search) S0 = 0; S1 = 1 50 63 80 µV
low (auto-store/search) S0 = 1; S1 = 0 32 40 50 µV
nominal (preset mode/tuning indication) S0 = 0; S1 = 0 25 28 40 µV
VAFC(off) AFC voltage off mode α−3 dB-point at Vi4 = 20 µV
FM mode − 3 − µV
AM mode − 25 − µV
mute(h) hard mute WRITE-ENABLE = HIGH − 60 − dB

1999 Aug 04 15
 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...

1999 Aug 04

Philips Semiconductors
Self Tuned Radio (STR)
handbook, full pagewidth (dBµV)
−20 0 20 40 60 80 100 120
10 9
THD
(dB)
(%)
0 8
(1)

−10 7

−20 6

−30 5
(2)

−40 4
16

−50 3

−60 (3) 2

−70 1

−80 0
10−7 10−6 10−5 10−4 10−3 10−2 10−1 Vi1 (V) 1
MBE853

Product specification
TEA5762
(1) Audio signal.
(2) Noise.
(3) Harmonic distortion.

Fig.6 AM mode.
 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...

1999 Aug 04

Philips Semiconductors
Self Tuned Radio (STR)
handbook, full 0
pagewidth 20 40 60 80 100 (dBµV) 120
10 9
THD
(dB)
(1) (%)
0 8
(3)

−10 7

−20 6
(4)

−30 5

−40 4

(2)
−50 (5) 3
17

−60 2

(6)
−70 1
(7)

−80 0
10−6 10−5 10−4 10−3 10−2 10−1 Vi1 (V) 1

MBE854

(1) Mono signal.

(2) Noise in mono mode.

Product specification
(3) Left channel with modulation left.
(4) Right channel with modulation left.

TEA5762
(5) Noise in stereo mode.
(6) Harmonic distortion ∆f = 75 kHz.
(7) Total harmonic distortion ∆f = 22.5 kHz.

Fig.7 FM mode.
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

INTERNAL CIRCUITRY
Table 8 Equivalent pin circuits and pin voltages
DC VOLTAGE
PIN SYMBOL (V) EQUIVALENT CIRCUIT
AM FM
1 RIPPLE 2.1 2.1 7

1 kΩ
1

3 kΩ 70 pF

17 MBE821

2 AM-RFI 0 0

2
MBE822

3 RFGND − −
4 CGND 0 0
5 COUNTI 0 0

4 MBE823

6 AMOSC 0 0

4 MBE824

7 VCC1 3.0 3.0

1999 Aug 04 18
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

DC VOLTAGE
PIN SYMBOL (V) EQUIVALENT CIRCUIT
AM FM
8 TUNE − − 22

26 MBE825

9 VCO 1.3 0.95

1 kΩ

10 kΩ
MBE826
17

10 AFO 0.6 0.7

10

5 kΩ
MBE827
17

11 MPXI 1.23 1.23

150 kΩ 150 kΩ

11
9.5 kΩ

MBE828
17

1999 Aug 04 19
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

DC VOLTAGE
PIN SYMBOL (V) EQUIVALENT CIRCUIT
AM FM
12 LFI 0.1 0.8
4 kΩ

12 13 kΩ

17 MBE829

13 MUTE 0.7 0.7

7 kΩ 50 kΩ

13

17 MBE830

14 AFLO 0.65 0.65

14

5 kΩ

17 MBE831

15 AFRO 0.65 0.65

15

5 kΩ

17 MBE832

1999 Aug 04 20
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

DC VOLTAGE
PIN SYMBOL (V) EQUIVALENT CIRCUIT
AM FM
16 PILFIL 0.95 0.95

16

10 kΩ 10 kΩ

17 MBE833

17 IFGND 0 0
18 FMDEM − 1.0
180 Ω
18

910 Ω

17 MBE834

19 AFC(n) − −
20 AFC(p) − −

10 kΩ 10 kΩ

19/20

MBE835

21 FSI − − 1.4 V

40 kΩ

21
12 to 34 kΩ
(dependent on
bits 16 and 17)
26
MBE836

22 VCC2 − −
23 VDDD 3.0 3.0

1999 Aug 04 21
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

DC VOLTAGE
PIN SYMBOL (V) EQUIVALENT CIRCUIT
AM FM
24 MO/ST − −

100 Ω
24

26 MBE837

25 XTAL − −
50 kΩ 50 kΩ 50 kΩ

25

MBE838
26

26 DGND 0 0
27 BUS-CLOCK − −

27

26 MBE839

28 DATA − − 100 Ω
29 WRITE- − − 28
100 kΩ
ENABLE
50 kΩ
29

26 MBE840

1999 Aug 04 22
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

DC VOLTAGE
PIN SYMBOL (V) EQUIVALENT CIRCUIT
AM FM
30 P0 − −
23

120 Ω
100 kΩ

30
20 kΩ

26 MHA108

31 P1 − −
23

120 Ω
100 kΩ

31
20 kΩ

26 MHA109

32 AFC − −
34

20 kΩ

32

MBE842

33 FM-IF12 − 0.73
34
140 Ω
33
6 pF
2.2 kΩ

17 MBE843

1999 Aug 04 23
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

DC VOLTAGE
PIN SYMBOL (V) EQUIVALENT CIRCUIT
AM FM
34 VSTAB(B) 1.4 1.4
7
1 kΩ
1

34 MBE844

35 FM-IFO1 − 0.69
34

35 560 Ω

MBE845

36 AM-IFI/O2 1.4 1.4

34

36

3.6 kΩ 3.6 kΩ

MBE846
17

37 FM-IFI1 − 0.73
38
140 Ω
37
6 pF
1.9 kΩ

17 MBE847

38 VSTAB(A) 1.4 1.4

7
1 kΩ
1

38 MBE848

1999 Aug 04 24
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

DC VOLTAGE
PIN SYMBOL (V) EQUIVALENT CIRCUIT
AM FM
39 FM-ON/OFF − − 500 Ω
39

26 MBE849

40 AM-MIXER 1.4 1.4

40

38

MBE850

41 AM-IF1I 1.4 1.4

38

3 kΩ

41
7.5 kΩ 7.5 kΩ

MBE851
17

42 RFGND2 0 0
43 n.c. − −
44 AGC 0.1 0.7

1 kΩ 1 kΩ
1 kΩ

44

17 MBE852

1999 Aug 04 25
 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...

1999 Aug 04

TEST AND APPLICATION INFORMATION

Philips Semiconductors
Self Tuned Radio (STR)
VSTAB(A)
FM front-end
Mitsumi FE415-G11
(6)
K1
OSC-OUT
150 Ω 150 Ω
IF-OUT VSTAB(B)
VCC
220 Ω
VTUNE (7)
K2 DATA
220 kΩ
(8)
GND WRITE- BUS- K3
AGC ENABLE CLOCK 100 nF
470
n.c. 150 kΩ
pF
ANT 37 35 33 29 28 27 17 18 21 VCC1
10 kΩ 39 2.2 µF
16
10 kΩ
68 kΩ
24
MO/ST
VSTAB(A) 38 470 nF
VSTAB(B) 34
VCC1 12 2.2 kΩ
7
10 Ω
100 nF 23 9 470 nF

100 1 68 kΩ
µF 50 kΩ
220 nF
(11) 12 nF
5
TEA5762
26

100 nF
14
AFLO
120 Ω
4 AFRO
15
(11) 100 nF
25
12 nF
75 kHz (10) 13
26 4.7 µF
GND 470 nF
19
TUNE
20
47 kΩ (9)
BB112
2 32
22 nF VSTAB(B)

L1 (1) 18 pF 6 40 41 36 44 31 30 8 22 10 11 3 L5 (5)
(2) 10 µF
L2 220 nF
(3)
18 pF (4) 470 nF
18 pF L3 10 nF 330 pF
(9)
BB112 L4 MBE816
470 pF P1 P0 TUNE VCC2

Product specification
47 kΩ VSTAB(A) VSTAB(B)

TEA5762
handbook, full pagewidth

TUNE

See Table 9 for figure notes.

Fig.8 Application diagram.

 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...

1999 Aug 04

Philips Semiconductors
Self Tuned Radio (STR)
DATA
50 Ω Vi4 330 Ω VSTAB(B) WRITE- BUS-
ENABLE CLOCK K2 (8)
VCC1
10.7 MHz 50 Ω (7)
K1 100 nF
1 nF

37 35 33 29 28 27 17 18 21 10 kΩ
2.2 µF
16
39 TUNER FM FM FM PILOT
FM-ON/OFF
SWITCH IF1 IF2 DETECTOR DETECTOR
MO/ST
24 470 nF
19 kHz
12 2.2 kΩ

VSTAB(A) 38 PLL 470 nF

VSTAB(B) 34
AM/FM 9
7 68 kΩ
VCC1 STATUS INDICATOR 38 kHz 50 kΩ
SHIFT REGISTER
STABILIZER REGISTER
10 Ω
23 DECODER
100 nF (11)
100 1 12 nF
up IN-LOCK stereo
µF 14 100 nF
220 nF down DETECTOR
AFLO
5 LAST-STATION level
MATRIX
PRESCALER MEMORY AFRO
4 15 (11) 100 nF
stereo mono
18 kΩ 10 FM SEQUENTIAL 12 nF
CHARGE
pF (6) PROGRAMMABLE AM CIRCUIT PUMP SDS 13
TUNE MULTIPLEXER
L6 COUNTER MUTE
BB804 S4 4.7 µF
hard mute level
27

B A
75 kHz 25
CRYSTAL WINDOW
(9) AFC 8.2 kΩ
26 OSCILLATOR DETECTOR
DGND TEA5762
470 nF
19
20
32 VSTAB(B)
(1)
L1
50 Ω Vi1 43 Ω 2
AM
AM AM AM AM V/I
FRONT
OSCILLATOR MIXER IF
AGC
DETECTOR CONVERTER L5 (5)
END
1 MHz 6.8 Ω 680 pF

6 40 41 36 44 31 30 8 22 10 11 3

(2) B
L2
S1 10 µF S2
18 pF
A B A
(4) 470 nF 10 nF
A S3 330 pF
18 pF L3
3 kΩ
L4 B 220 nF
(10) 50 Ω
220 µF Vi3
handbook, full pagewidth

Product specification
(3)
BB112
5 kΩ
Vi2 50 Ω
50 Ω MPXI

TEA5762
470 pF
VSTAB(A) 450 kHz
47 kΩ
VSTAB(B) P1 P0 TUNE VCC2
MBE814

See Table 9 for figure notes. TUNE

Fig.9 Test circuit.

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

Table 9 Test and application components

FIGURE NOTE DESCRIPTION
Application diagram; see Fig.8
1 L1 = 250 mH ferroceptor
2 L2 = 7P 7DRS-11459N, 110 µH at 796 kHz, Q = 80 TOKO
3 L3 = 7P A7MCS-11844N, C = 180 pF, Q = 90 TOKO
4 L4 = 7P A7MCS-11845Y, C = 180 pF, Q = 90 TOKO
5 L5 = 7P A7MCS-11845Y, C = 180 pF, Q = 90 TOKO
6 K1 = SFE10.7MS3 MURATA
7 K2 = SFE10.7MS3 MURATA
8 K3 = CDA10.7-MG40-A discriminator ∆f = 20 kHz MURATA
9 alternatively BB512 (Siemens) or KV1561A TOKO
10 standard application: ±30 ppm at Tamb = 25 °C
short wave application: ±20 ppm at Tamb = 25 °C
11 de-emphasis time constant is 50 µs: Cdeem = 12 nF
de-emphasis time constant is 75 µs: Cdeem = 18 nF
Test circuit; see Fig.9
1 K1 = SFE10.7MS3 MURATA
2 K2 = CDA10.7-MG40-A discriminator ∆f = 20 kHz MURATA
3 L1 = 22281-30091
4 L2 = 7P 7DRS-11459N, 110 µH at 796 kHz, Q = 80 TOKO
5 L3 = 7P A7MCS-11844N, C = 180 pF, Q = 90 TOKO
6 L4 = 7P A7MCS-11845Y, C = 180 pF, Q = 90 TOKO
7 L5 = 7P A7MCS-11845Y, C = 180 pF, Q = 90 TOKO
8 L6 = S18 301SS-0200
9 standard application: ±30 ppm at Tamb = 25 °C
short wave application: ±20 ppm at Tamb = 25 °C
10 alternatively BB512 (Siemens) or KV1561A TOKO
11 de-emphasis time constant is 50 µs: Cdeem = 12 nF
de-emphasis time constant is 75 µs: Cdeem = 18 nF

1999 Aug 04 28
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

PACKAGE OUTLINE
QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm SOT307-2

c
y
X

33 23
34 22 ZE

E HE
A A2 (A 3)
A1
wM
θ
bp
Lp
pin 1 index
L
44 12
detail X
1 11

wM ZD v M A
e bp

D B
HD v M B

0 2.5 5 mm
scale

DIMENSIONS (mm are the original dimensions)

A
UNIT max. A1 A2 A3 bp c D (1) E (1) e HD HE L Lp v w y Z D (1) Z E (1) θ
o
0.25 1.85 0.40 0.25 10.1 10.1 12.9 12.9 0.95 1.2 1.2 10
mm 2.10 0.25 0.8 1.3 0.15 0.15 0.1
0.05 1.65 0.20 0.14 9.9 9.9 12.3 12.3 0.55 0.8 0.8 0o

Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

95-02-04
SOT307-2
97-08-01

1999 Aug 04 29
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

SOLDERING • Use a double-wave soldering method comprising a

turbulent wave with high upward pressure followed by a
Introduction to soldering surface mount packages
smooth laminar wave.
This text gives a very brief insight to a complex technology. • For packages with leads on two sides and a pitch (e):
A more in-depth account of soldering ICs can be found in
– larger than or equal to 1.27 mm, the footprint
our “Data Handbook IC26; Integrated Circuit Packages”
longitudinal axis is preferred to be parallel to the
(document order number 9398 652 90011).
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface – smaller than 1.27 mm, the footprint longitudinal axis
mount IC packages. Wave soldering is not always suitable must be parallel to the transport direction of the
for surface mount ICs, or for printed-circuit boards with
printed-circuit board.
high population densities. In these situations reflow
soldering is often used. The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering • For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
Reflow soldering requires solder paste (a suspension of
printed-circuit board. The footprint must incorporate
fine solder particles, flux and binding agent) to be applied
solder thieves downstream and at the side corners.
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement. During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
Several methods exist for reflowing; for example,
applied by screen printing, pin transfer or syringe
infrared/convection heating in a conveyor type oven.
dispensing. The package can be soldered after the
Throughput times (preheating, soldering and cooling) vary
adhesive is cured.
between 100 and 200 seconds depending on heating
method. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
Typical reflow peak temperatures range from
of corrosive residues in most applications.
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Manual soldering
Wave soldering Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
Conventional single wave soldering is not recommended
less) soldering iron applied to the flat part of the lead.
for surface mount devices (SMDs) or printed-circuit boards
Contact time must be limited to 10 seconds at up to
with a high component density, as solder bridging and
300 °C.
non-wetting can present major problems.
When using a dedicated tool, all other leads can be
To overcome these problems the double-wave soldering
soldered in one operation within 2 to 5 seconds between
method was specifically developed.
270 and 320 °C.
If wave soldering is used the following conditions must be
observed for optimal results:

1999 Aug 04 30
Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5762

Suitability of surface mount IC packages for wave and reflow soldering methods

SOLDERING METHOD
PACKAGE
WAVE REFLOW(1)
BGA, SQFP not suitable suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not suitable(2) suitable
PLCC(4), SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended(4)(5) suitable
SSOP, TSSOP, VSO not recommended(6) suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a s
3. older joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may
stick to the heatsink (on top version).
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Aug 04 31
Philips Semiconductors – a worldwide company
Argentina: see South America Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +31 40 27 82785, Fax. +31 40 27 88399
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +64 9 849 4160, Fax. +64 9 849 7811
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Norway: Box 1, Manglerud 0612, OSLO,
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, Tel. +47 22 74 8000, Fax. +47 22 74 8341
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Pakistan: see Singapore
Belgium: see The Netherlands Philippines: Philips Semiconductors Philippines Inc.,
Brazil: see South America 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA, Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102 Tel. +48 22 612 2831, Fax. +48 22 612 2327
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Portugal: see Spain
Tel. +1 800 234 7381, Fax. +1 800 943 0087 Romania: see Italy
China/Hong Kong: 501 Hong Kong Industrial Technology Centre, Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +7 095 755 6918, Fax. +7 095 755 6919
Tel. +852 2319 7888, Fax. +852 2319 7700 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Colombia: see South America Tel. +65 350 2538, Fax. +65 251 6500
Czech Republic: see Austria Slovakia: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Slovenia: see Italy
Tel. +45 33 29 3333, Fax. +45 33 29 3905 South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
Finland: Sinikalliontie 3, FIN-02630 ESPOO, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +358 9 615 800, Fax. +358 9 6158 0920 Tel. +27 11 471 5401, Fax. +27 11 471 5398
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, South America: Al. Vicente Pinzon, 173, 6th floor,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 04547-130 SÃO PAULO, SP, Brazil,
Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +55 11 821 2333, Fax. +55 11 821 2382
Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Spain: Balmes 22, 08007 BARCELONA,
Hungary: see Austria Tel. +34 93 301 6312, Fax. +34 93 301 4107
India: Philips INDIA Ltd, Band Box Building, 2nd floor, Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Tel. +91 22 493 8541, Fax. +91 22 493 0966 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Indonesia: PT Philips Development Corporation, Semiconductors Division, Tel. +41 1 488 2741 Fax. +41 1 488 3263
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Ireland: Newstead, Clonskeagh, DUBLIN 14, Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
Tel. +353 1 7640 000, Fax. +353 1 7640 200 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, Tel. +66 2 745 4090, Fax. +66 2 398 0793
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Tel. +39 039 203 6838, Fax +39 039 203 6800 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
Tel. +82 2 709 1412, Fax. +82 2 709 1415 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +1 800 234 7381, Fax. +1 800 943 0087
Tel. +60 3 750 5214, Fax. +60 3 757 4880 Uruguay: see South America
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Vietnam: see Singapore
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Middle East: see Italy Tel. +381 11 62 5344, Fax.+381 11 63 5777

For all other countries apply to: Philips Semiconductors, Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

© Philips Electronics N.V. 1999 SCA 67

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 545002/02/pp32 Date of release: 1999 Aug 04 Document order number: 9397 750 06057