INTEGRATED CIRCUITS

DATA SHEET

TEA5710; TEA5710T
AM/FM radio receiver circuit
Product specification March 1994
File under Integrated Circuits, IC01
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

FEATURES APPLICATIONS
• Wide supply voltage range: 2.0 to 12 V • Portable AM/FM radio
• Low current consumption: 7.5 mA at AM, 9.0 mA at FM • Clock radio
• High selectivity with distributed IF gain • Personal headphone radio
• LED driver for tuning indication
• High input sensitivity: 1.6 mV/m (AM), 2.0 µV (FM) for 26 DESCRIPTION
dB S/N
The TEA5710 is a high performance Bimos IC for use in
• Good strong signal behaviour: 10 V/m at AM, 500 mV at AM/FM radios. All necessary functions are integrated:
FM from AM and FM front-end to detector output stages.
• Low output distortion: 0.8% at AM, 0.3% at FM
• Designed for simple and reliable PC-board layout
• High impedance MOSFET input on AM

QUICK REFERENCE DATA

Conditions AM: fi = 1 MHz; m = 0.3; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A,
unless otherwise specified. Conditions FM: fi = 100 MHz; ∆f = 22.5 kHz; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with
S1 in position B and S2 in position A, unless otherwise specified.
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
VP positive supply voltage 2.0 − 12 V
IP supply current
in AM mode 5.6 7.5 9.9 mA
in FM mode 7.3 9.0 11.2 mA
Tamb operating ambient temperature range −15 − +60 °C
AM performance
Vin1 RF sensitivity 40 55 70 µV
V13 AF output voltage 36 45 70 mV
THD total harmonic distortion − 0.8 2.0 %
FM performance
Vin3 RF sensitivity 1.0 2.0 3.8 µV
V13 AF output voltage 47 58 69 mV
THD total harmonic distortion − 0.3 0.8 %

ORDERING INFORMATION

EXTENDED TYPE PACKAGE

NUMBER PINS PIN POSITION MATERIAL CODE
TEA5710 24 SDIL plastic SOT234AG(1)
TEA5710T 24 SO24L plastic SOT137A(2)
Notes
1. SOT234-1; 1996 August 27.
2. SOT137-1; 1996 August 27.

March 1994 2
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

handbook, full pagewidth FM-RFI FM-RFO FM-MIXER FM-IF1I FM-RF1O FM-IF2I FM-DEM

1 20 4 6 8 10 12

24 FM FM FM FM FM
RFGND
FRONT-END MIXER IF 1 IF 2 DETECTOR

18
FM-OSC
16 14
VP FM AM/FM
FM AM/FM
22 TEA5710
OSCILLATOR SWITCH
RIPPLE TEA5710T AM
5 21 AM-AGC/
VSTABA STABILIZER FM-AFC
9
VSTABB
AM AM/FM 15
11 AGC IND
OSCILLATOR INDICATOR
IFGND
17
AM-OSC

23 AM AM AM 13
AM-RFI AM-IF AF
FRONT-END MIXER DETECTOR

3 2 7 19

AM-MIXER AM-IF1I AM-IF2I/O SUBGND MGE106

Fig.1 Block diagram.

March 1994 3
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

PINNING

SYMBOL PIN DESCRIPTION

FM-RFI 1 FM-RF aerial input (input impedance typ. 50 Ω)
AM-IF1I 2 input from IFT or ceramic filter (input impedance typ. 3 kΩ)
AM-MIXER 3 open-collector output to IFT
FM-MIXER 4 output to ceramic IF filter (output impedance typ. 330 Ω)
VSTABA 5 stabilized internal supply voltage (A)
FM-IF1I 6 first FM-IF input (input impedance typ. 330 Ω)
AM-IF2I/O 7 input/output to IFT; output: current source
FM-IF1O 8 first FM-IF output (output impedance typ. 330 Ω)
VSTABB 9 stabilized internal supply voltage (B)
FM-IF2I 10 second FM-IF input (input impedance typ. 330 Ω)
IFGND 11 ground of IF and detector stages
FM-DEM 12 ceramic discriminator pin
AF 13 audio output (output impedance typ. 5 kΩ)
AM/FM 14 switch terminal: open for AM; ground for FM
IND 15 field-strength dependent indicator
VP 16 positive supply voltage
AM-OSC 17 parallel tuned AM-OSC circuit to ground
FM-OSC 18 parallel tuned FM-OSC circuit to ground
SUBGND 19 substrate and RF ground
FM-RFO 20 parallel tuned FM-RF circuit to ground
AM-AGC/FM-AFC 21 AGC/AFC capacitor pin
RIPPLE 22 ripple capacitor pin
AM-RFI 23 parallel tuned AM aerial circuit to ground (total input capacitance typ. 3 pF)
RFGND 24 FM-RF ground

March 1994 4
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

handbook, halfpage handbook, halfpage

FM-RFI 1 24 RFGND FM-RFI 1 24 RFGND

AM-IFI 2 23 AM-RFI AM-IFI 2 23 AM-RFI

AM-MIXER 3 22 RIPPLE AM-MIXER 3 22 RIPPLE

FM-MIXER 4 21 AM-AGC/FM-AFC FM-MIXER 4 21 AM-AGC/FM-AFC

VSTABA 5 20 FM-RFO VSTABA 5 20 FM-RFO

FM-IF1I 6 19 SUBGND FM-IF1I 6 19 SUBGND

TDA5710 TDA5710T
AM-IF2I/O 7 18 FM-OSC AM-IF2I/O 7 18 FM-OSC

FM-IF1O 8 17 AM-OSC FM-IF1O 8 17 AM-OSC

VSTABB 9 16 VP VSTABB 9 16 VP

FM-IF2I 10 15 IND FM-IF2I 10 15 IND

IFGND 11 14 AM/FM IFGND 11 14 AM/FM

FM-DEM 12 13 AF FM-DEM 12 13 AF
MGE104 MGE105

Fig.2 Pin configuration TEA5710. Fig.3 Pin configuration TEA5710T.

FUNCTIONAL DESCRIPTION
The TEA5710 incorporates internal stabilized power supplies. The maximum supply voltage is 12 V, the minimum voltage
can go down temporarily to 1.8 V without any loss in performance.
The AM circuit incorporates a double balanced mixer, a one pin low-voltage oscillator (up to 30 MHz), a field-strength
dependent indicator output and is designed for distributed selectivity.
The AM input is designed to be connected to the top of a tuned circuit. AGC controls the IF amplification and for large
signals it lowers the input impedance.
The first AM selectivity can be an IFT as well as an IFT combined with a ceramic filter; the second one is an IFT.
The FM circuit incorporates a tuned RF stage, a double balanced mixer, a one-pin oscillator, a field-strength indicator
output and is designed for distributed IF ceramic filters. The FM quadrature detector uses a ceramic resonator.

March 1994 5
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER MIN. MAX. UNIT
VP positive supply voltage 0 12 V
Tstg storage temperature range −55 +150 °C
Tamb operating ambient temperature range −15 +60 °C
Tj junction temperature range −15 +150 °C

THERMAL RESISTANCE

SYMBOL PARAMETER VALUE UNIT

Rth j-a from junction to ambient
for SDIL version TEA5710 69 K/W
for SO24L version TEA5710T 76 K/W

CIRCUIT DESIGN DATA

DC PIN VOLTAGE (V)

PIN NO. PIN SYMBOL EQUIVALENT CIRCUIT
AM FM

220 Ω
1 FM-RFI − 0.73
1

24

20
MGE114

3 kΩ
AM-IF1I
2 1.4 1.4 2
input

11
MGE115

March 1994 6
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

DC PIN VOLTAGE (V)

PIN NO. PIN SYMBOL EQUIVALENT CIRCUIT
AM FM

AM-MIXER 5
3 1.4 1.4
output

MGE116

FM-MIXER
4 − 1.0 4
output
680 Ω

MGE117

16
5 VSTABA 1.4 1.4 22

5
MGE118

5
120 Ω
6
FM-IFI
6 − 0.73 2.7
input kΩ

11 MGE119

March 1994 7
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

DC PIN VOLTAGE (V)

PIN NO. PIN SYMBOL EQUIVALENT CIRCUIT
AM FM

7
AM-IF2I/O
7 1.4 1.4
input/output

11 MGE120

FM-IF1O 8
8 − 0.69
output 560 Ω

MGE121

16
9 VSTABB 1.4 1.4 22

9
MGE122

9
180 Ω
10
FM-IF2I
10 − 0.73 2.2
input kΩ

11 MGE123

11 IFGND 0 0

March 1994 8
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

DC PIN VOLTAGE (V)

PIN NO. PIN SYMBOL EQUIVALENT CIRCUIT
AM FM

180 Ω
12

12 FM-DEM − 1.0 910 Ω

11
MGE124

AF
13 0.6 0.7 13
output 25 kΩ

5 kΩ

11 MGE125

AM/FM
14 1.3 0 14
switch
MGE126

15
15 IND 3.0 3.0

11 MGE127

16 VP 3.0 3.0

17 AM-OSC 0 0
17

19 MGE128

March 1994 9
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

DC PIN VOLTAGE (V)

PIN NO. PIN SYMBOL EQUIVALENT CIRCUIT
AM FM

18
18 FM-OSC 0 0

10 kΩ
21

19
MGE129

19 SUBGND 0 0

220 Ω
20 FM-RFO 0 0
1

24

20
MGE114

21
AM-AGC/
21 0.1 0.7
FM-AFC

11

MGE130

March 1994 10
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

DC PIN VOLTAGE (V)

PIN NO. PIN SYMBOL EQUIVALENT CIRCUIT
AM FM

16

22
22 RIPPLE 2.1 2.1

11 MGE131

23 AM-RFI 0 0

19

23 MGE132

220 Ω
24 RFGND 0 0
1

24

20
MGE114

March 1994 11
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

AM CHARACTERISTICS
fi = 1 MHz; m = 0.3; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless
otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IP supply current no input signal 5.6 7.5 9.9 mA
Ci input capacitance V21 = 0.2 V − 3 − pF
Gc front-end conversion gain V21 = 0.2 V 1.8 3.3 5.0
Vin1 RF sensitivity S/N = 26 dB 40 55 70 µV
Vin2 IF sensitivity V13 = 30 mV; 0.13 0.2 0.45 mV
S1 in position A
V13 AF output voltage Vin2 = 3.16 mV; 36 45 70 mV
S1 in position A
THD total harmonic distortion Vin1 = 1 mV − 0.8 2.0 %
Vin1 large signal handling m = 0.8; 150 300 − mV
THD ≤ 8%
IIND indicator current Vin2 = 100 mV; 2 3.5 6 mA
S1 in position A
IINDOFF indicator OFF current Vin2 = 0 V; − 0 10 µA
S1 in position A

FM CHARACTERISTICS
fi = 100 MHz; ∆f = 22.5 kHz; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless
otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IP supply current no input signal 7.3 9.0 11.2 mA
Vin3 RF limiting sensitivity V13 = −3 dB 0.4 1.2 3.8 µV
Vin3 RF sensitivity S/N = 26 dB 1.0 2.0 3.8 µV
V6/Vin3 front-end voltage gain Vin3 ≤ 1 mV; 12 18 22 dB
including ceramic
filter K1
Vin4 IF sensitivity S2 in position B; − 20 30 µV
V13 = −3 dB
V13 AF output voltage Vin3 = 1 mV 47 58 69 mV
THD total harmonic distortion Vin3 = 1 mV; − 0.3 0.8 %
∆f = 22.5 kHz
Vin3 large signal handling THD ≤ 5% − 500 − mV
IIND indicator current Vin4 = 100 mV; 2 3.5 6 mA
S2 in position B
IINDOFF indicator OFF current Vin4 = 0 V; − 0 10 µA
S2 in position B

March 1994 12
March 1994
handbook, full pagewidth
Philips Semiconductors

Vin1 L2 L3 L4
L8 18 22 8.2
40 µH pF pF pF
Rg 43 Ω

(50 Ω) FM-RF FM-OSC AM-OSC

1 VP
6.8 Ω 680 pF
MHz

CQS54
AM/FM radio receiver circuit

10 FM AM 10
nF nF
Vp
100 10
µF µF
AF

24 23 22 21 20 19 18 17 16 15 14 13

TEA5710

13
TEA5710T
Vin3 1 2 3 4 5 6 7 8 9 10 11 12

Rg 27 Ω 1 nF
K3
(50 Ω) S1 S2
100
560 Ω 91 Ω
MHz A B A B
K1 K2
L6
MGE108
L5

Rg 220nF 3 kΩ Rg 330 Ω

(50 Ω) (50 Ω)
468 10.7
Vin2 50 Ω Vin4 50 Ω
kHz MHz

to pin 5

Fig.4 Test circuit.

TEA5710; TEA5710T
Product specification
March 1994
handbook, full pagewidth
Philips Semiconductors

APPLICATION INFORMATION

1 2 2 1
C6 Cc C7 Cd C8
Ca Cb
18 20 22 80 8.2
140 CTa 20 CTb CTc CTd
pF pF pF pF pF
L1 2 pF 8 pF L2 1 pF 8 pF L3 1 8 pF L4 3 8 pF
C11
AM-RFI FM-RFI FM-OSC AM-OSC 100 µF
3V
AM/FM radio receiver circuit

VP

HP
C4 C10 32 Ω
LED FM AM 100
10 nF C5
CQS54 µF ON
10 R1 R2
C2 C3 nF OFF 10 Ω 10 Ω
100 µF 10 µF

14
VP
AF
24 23 22 21 20 19 18 17 16 15 14 13 8 7 6 5

TEA5710 TDA7050T
TEA5710T
1 2 3 4 5 6 7 8 9 10 11 12 1 2 3 4

C1
4.7 1
nF 6 1 C9
K3 100 nF
K1 L6 K2
2 2
CO 22 L7 CDA10.7MC40 MGE107
4 3 3
pF 60 nH P1
L5 SFE10.7MS3 SFE10.7MS2 4.7 kΩ

Fig.5 Application circuit of TEA5710 (AM: 522 to 1611 kHz, FM: 87.5 to 108 MHz) with stereo headphone amplifier TDA7050T.
TEA5710; TEA5710T
Product specification
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

handbook, full pagewidth

MGE109

Fig.6 Printed-circuit board layout (track side) for application circuit of Fig.5.

March 1994 15
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

handbook, full pagewidth ANT GND 100MHz 1MHz

6.8 L1
C1
680 40 µH 43
C12
560
C2 4.7 27 C4
91 L2
R2 C3
1
HP
K1
PLUG L5
TEA5710
C7 ANT
R3 A
F
C11 M M
L6 C8
OSC C9
C5
K2
K3 C6 L3 L4
P1
<FM AM> LED

1.5 V

C10
GND

1.5 V
AF

MGE110

Fig.7 Printed-circuit board layout (component side) for application circuit of Fig.5.

March 1994 16
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

Components for Figs 4 and 5

Coils
L1 AM-AERIAL ferroceptor
length = 6 cm
L1-2 = 625 µH
N1-2 = 105 turns
L2 FM-RF L1-2 = 66 nH
N1-2 = 2.5 turns
unloaded Q = 150
TOKO type S18
TOKO no. 301SS-0200
L3 FM-OSC L1-2 = 40 nH
N1-2 = 1.5 turns
unloaded Q = 150
TOKO type S18
TOKO no. 301SS-0100
L4 AM-OSC L1-3 = 270 µH
N1-2 = 18
N2-3 = 70 3

unloaded Q = 100 2
L4
wire diameter 0.07 mm 1
S MGE133
TOKO type 7P
material TOKO 7BRS
L5 AM-IF1 L1-3 = 625 µH
N1-2 = 17 turns
N2-3 = 141 turns S
3 4
N4-6 = 10 turns
2
C1-3 = 180 pF
1 6
unloaded Q = 90 S L5
MGE134
wire diameter 0.07 mm
TOKO type 7P
material TOKO 7MCS
L6 AM-IF2 L1-3 = 625 µH
N1-2 = 28 turns
N2-3 = 130 turns 3
C1-3 = 180 pF
2 L6
unloaded Q = 90
1
wire diameter 0.07 mm S MGE135

TOKO type 7P
material TOKO 7MCS

March 1994 17
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

L7 FM-AERIAL print-coil
L1-2 = 60 nH
N1-2 = 2.5 turns
L8 AM-RF test circuit only:
L1-3 = 40 µH
N1-3 = 34 turns 3
unloaded Q = 85
L8
wire diameter 0.09 mm
1
TOKO type 7P S MGE136

material TOKO 7BRS

Ceramic filters
K1 FM-IF1 Murata SFE 10.7 MS 3
K2 FM-IF2 Murata SFE 10.7 MS 2
K3 FM-DET Murata CDA 10.7 MC 40
Capacitors
C1 VARICON AM: 140/82 pF
FM: 2 × 20 pF
trimmer: 4 × 8 pF
TOKO type no. HU-22124

Application notes
1. Short circuiting: all pins are short-circuit proof except pin 1 (FM-RFI) with respect to the supply voltage pin.
2. Tuning indicator (at pin 15, IND): connect either a tuning indicator (e.g. a LED) between this pin and the supply
voltage (pin 16) or connect the pin IND to ground.
3. For an example of PC-board layout: see Figs 6 and 7.

March 1994 18
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

MGE111
0 7
handbook, full pagewidth
VAF (dB) signal level (mA)
m = 0.3 THD (%)
0 dB = 45 mV
−10 6

−20 level 5

noise
−30 m=0
4

−40 3

−50 2

−60 1
THD
m = 0.3
−70 0
10−1 1 10 102 103 104 105 106
Vin1 (µV)

Fig.8 Typical AM audio output voltage (VAF; signal at m = 0.3), noise, THD (at m = 0.3) and indicator current
(level) as a function of RF input voltage (Vin1; f = 1 kHz). Measured in test circuit of Fig.4 with VP = 3.0 V.

March 1994 19
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

MGE112
0
handbook, full pagewidth 7
VAF (dB) signal level (mA)
0 dB = 45 mV m = 0.3 THD (%)
−10 6

−20 noise 5
m=0

−30 level 4

−40 3

−50 2

−60 1
THD
m = 0.3
−70 0
1 10 102 103 104 105 106 107
field-strength (µV)

Fig.9 Typical AM audio output voltage (VAF; signal at m = 0.3), noise, THD (at m = 0.3) and indicator current
(level) as a function of field-strength (f = 1 kHz). Measured at 1 MHz in application circuit of Fig.5 with
VP = 3 V.

March 1994 20
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

MGE113
0 7
handbook, full pagewidth signal
VAF (dB) ind (mA)
0 dB = 65 mV THD (%)
−10 6

−20 5

−30 4

noise ind
−40 3

−50 2

THD
22.5 kHz
−60 1

−70 0
10−1 1 10 102 103 104 105 106
Vin3 (µV)

Fig.10 Typical FM audio output voltage (VAF; signal), noise, THD and indicator current (ind) as a function of RF
input voltage (Vin3; df = 22.5 kHz). Measured in test circuit of Fig.4 at VP = 3 V.

March 1994 21
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

PACKAGE OUTLINES

SDIP24: plastic shrink dual in-line package; 24 leads (400 mil) SOT234-1

D ME
seating plane

A2 A

L A1

c
Z e w M (e 1)
b1
MH
b
24 13

pin 1 index
E

1 12

0 5 10 mm
scale

DIMENSIONS (mm are the original dimensions)

UNIT
A A1 A2
b b1 c D (1) E (1) e e1 L ME MH w Z (1)
max. min. max. max.
1.3 0.53 0.32 22.3 9.1 3.2 10.7 12.2
mm 4.7 0.51 3.8 1.778 10.16 0.18 1.6
0.8 0.40 0.23 21.4 8.7 2.8 10.2 10.5

Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

92-11-17
SOT234-1
95-02-04

March 1994 22
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

SO24: plastic small outline package; 24 leads; body width 7.5 mm SOT137-1

D E A
X

y HE v M A

24 13

Q
A2 A
A1 (A 3)

pin 1 index
θ
Lp
L

1 12 detail X
e w M
bp

0 5 10 mm
scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A
UNIT A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z
(1)
θ
max.

2.65 0.30 2.45 0.49 0.32 15.6 7.6 10.65 1.1 1.1 0.9
mm 0.25 1.27 1.4 0.25 0.25 0.1
0.10 2.25 0.36 0.23 15.2 7.4 10.00 0.4 1.0 0.4 8o
0.012 0.096 0.019 0.013 0.61 0.30 0.42 0.043 0.043 0.035 0o
inches 0.10 0.01 0.050 0.055 0.01 0.01 0.004
0.004 0.089 0.014 0.009 0.60 0.29 0.39 0.016 0.039 0.016

Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

92-11-17
SOT137-1 075E05 MS-013AD
95-01-24

March 1994 23
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

SOLDERING Several techniques exist for reflowing; for example,

thermal conduction by heated belt. Dwell times vary
Introduction between 50 and 300 seconds depending on heating
There is no soldering method that is ideal for all IC method. Typical reflow temperatures range from
packages. Wave soldering is often preferred when 215 to 250 °C.
through-hole and surface mounted components are mixed Preheating is necessary to dry the paste and evaporate
on one printed-circuit board. However, wave soldering is the binding agent. Preheating duration: 45 minutes at
not always suitable for surface mounted ICs, or for 45 °C.
printed-circuits with high population densities. In these
situations reflow soldering is often used.
WAVE SOLDERING
This text gives a very brief insight to a complex technology.
Wave soldering techniques can be used for all SO
A more in-depth account of soldering ICs can be found in
packages if the following conditions are observed:
our “IC Package Databook” (order code 9398 652 90011).
• A double-wave (a turbulent wave with high upward
SDIP pressure followed by a smooth laminar wave) soldering
technique should be used.
SOLDERING BY DIPPING OR BY WAVE
• The longitudinal axis of the package footprint must be
The maximum permissible temperature of the solder is parallel to the solder flow.
260 °C; solder at this temperature must not be in contact • The package footprint must incorporate solder thieves at
with the joint for more than 5 seconds. The total contact the downstream end.
time of successive solder waves must not exceed
5 seconds. During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
The device may be mounted up to the seating plane, but applied by screen printing, pin transfer or syringe
the temperature of the plastic body must not exceed the dispensing. The package can be soldered after the
specified maximum storage temperature (Tstg max). If the adhesive is cured.
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the Maximum permissible solder temperature is 260 °C, and
temperature within the permissible limit. maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
REPAIRING SOLDERED JOINTS 6 seconds. Typical dwell time is 4 seconds at 250 °C.

Apply a low voltage soldering iron (less than 24 V) to the A mildly-activated flux will eliminate the need for removal
lead(s) of the package, below the seating plane or not of corrosive residues in most applications.
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in REPAIRING SOLDERED JOINTS
contact for up to 10 seconds. If the bit temperature is Fix the component by first soldering two diagonally-
between 300 and 400 °C, contact may be up to 5 seconds. opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
SO time must be limited to 10 seconds at up to 300 °C. When
REFLOW SOLDERING using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
Reflow soldering techniques are suitable for all SO 270 and 320 °C.
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

March 1994 24
Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

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