SSF6808

68V N-Channel MOSFET

FEATURES
ID =84A
 Advanced trench process technology
BV=68V
 Ultra low Rdson, typical 6mohm
R DS (ON) =8mohm
 High avalanche energy, 100% test
 Fully characterized avalanche voltage and current
 Lead free product

DESCRIPTION
The SSF6808 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device
reliability and electrical parameter repeatability. SSF6808 is
assembled in high reliability and qualified assembly house.

APPLICATIONS
 Power switching application SSF6808 Top View (TO-220)

Absolute Maximum Ratings

Parameter Max. Units
I D @T c =25ْ C Continuous drain current,VGS@10V
B B B B 84
I D @T c =100ْC Continuous drain current,VGS@10V
B B B B 76 A
I DM B B Pulsed drain current ① 310
Power dissipation 181 W
P D @T C =25ْC
B B B B

Linear derating factor 1.5 W/ْ C

V GS B B Gate-to-Source voltage ±20 V
dv/dt Peak diode recovery voltage 31 v/ns
E AS B B Single pulse avalanche energy ② 400 mJ
E AR B B Repetitive avalanche energy TBD
TJ B B Operating Junction and
–55 to +175 ْC
T STG B B Storage Temperature Range

Thermal Resistance
Parameter Min. Typ. Max. Units
R θJC B B Junction-to-case — 0.83 —
ْC/W
R θJA B B Junction-to-ambient — — 62

Electrical Characteristics @T J=25 ْC (unless otherwise specified)

Parameter Min. Typ. Max. Units Test Conditions
BV DSS B B Drain-to-Source breakdown voltage 68 — — V V GS =0V,I D =250μA
B B B B

R DS(on)
B B Static Drain-to-Source on-resistance — 5 8 mΩ V GS =10V,I D =30A
B B B B

V GS(th)
B B Gate threshold voltage 2.0 — 4.0 V V DS =V GS ,I D =250μA
B B B B B B

— — 2 V DS =68V,V GS =0V
B B B B

I DSS
B B Drain-to-Source leakage current μA V DS =68V,
B B

— — 10
V GS =0V,T J =150ْC
B B B B

Gate-to-Source forward leakage — — 100 V GS =20V B B

I GSS
B B nA
Gate-to-Source reverse leakage — — -100 V GS =-20V
B B

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 SSF6808
68V N-Channel MOSFET

Qg B B Total gate charge — 90 — I D =30AB B

Q gs B B Gate-to-Source charge — 18 — nC V DD =30V

B B

Q gd B B Gate-to-Drain("Miller") charge — 28 — V GS =10V

B B

t d(on)
B B Turn-on delay time — 18.2 — V DD =30V
B B

tr B B Rise time — 15.6 — I D =2A ,R L =15Ω

B B B B

nS
t d(off)
B B Turn-Off delay time — 70.5 — R G =2.5Ω
B B

tf B B Fall time — 13.8 — V GS =10V

B B

C iss B B Input capacitance — 3150 — V GS =0V B B

C ossB B Output capacitance — 300 — pF V DS =25V

B B

C rss B B Reverse transfer capacitance — 240 — f=1.0MHZ

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions
Continuous Source Current MOSFET symbol
IS B B — — 84
(Body Diode) showing the
A
Pulsed Source Current integral reverse
I SM — — 310
(Body Diode) ①
B B

p-n junction diode.

V SD B B Diode Forward Voltage — — 1.3 V T J =25ْC,I S =68A,V GS =0V ③
B B B B B B

t rr B B Reverse Recovery Time — 57 — nS T J =25ْC,I F =68A

B B B B

Q rr B B Reverse Recovery Charge — 107 — nC di/dt=100A/μs ③

t on B B Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, ID = 37A, VDD = 30V.
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C.

EAS test circuit Gate charge test circuit

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 SSF6808
68V N-Channel MOSFET

Switch Time Test Circuit Switch Waveforms

Transfer Characteristic Capacitance

On Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature

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 SSF6808
68V N-Channel MOSFET

Gate Charge Source-Drain Diode Forward Voltage

Safe Operation Area Max Drain Current vs. Junction Temperature

Transient Thermal Impedance Curve

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 SSF6808
68V N-Channel MOSFET

Mechanical Data

TO-220 PACKAGE OUTLINE DIMENSION_GN

E A

ФP
ϴ1
D
ФP1 D2

ϴ
D1 ϴ2
b1
b
A1 ϴ4

e c E

Dimension In Millimeters Dimension In Inches

Symbol
Min Nom Max Min Nom Max
A - 1.300 - - 0.051 -
A1 2.200 2.400 2.600 0.087 0.094 0.102
b - 1.270 - - 0.050 -
b1 1.270 1.370 1.470 0.050 0.054 0.058
c - 0.500 - - 0.020 -
D - 15.600 - - 0.614 -
D1 - 28.700 - - 1.130 -
D2 - 9.150 - - 0.360 -
E 9.900 10.000 10.100 0.390 0.394 0.398
E1 - 10.160 - - 0.400 -
ФP - 3.600 - - 0.142 -
ФP1 1.500 0.059
e 2.54BSC 0.1BSC
L 12.900 13.100 13.300 0.508 0.516 0.524
0 0
ϴ1 - 7 - - 7 -
0 0
ϴ2 - 7 - - 7 -
ϴ3 - 30 - 50 70 90
0
ϴ4 - 3 - 10 30 50

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