SSF6014

Feathers:
ID =60A
 Advanced trench process technology
BV=60V
 avalanche energy, 100% test
Rdson=14mΩ（max.）
 Fully characterized avalanche voltage and current

Description:
The SSF6014 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6014 is assembled
in high reliability and qualified assembly house.
Application:

 Power switching application

SSF6014 TOP View (TO220)

Absolute Maximum Ratings

Parameter Max. Units
ID@Tc=25 ْC Continuous drain current,VGS@10V 60
ID@Tc=100ْC Continuous drain current,VGS@10V 42 A
IDM Pulsed drain current ① 240
Power dissipation 115 W
PD@TC=25ْC
Linear derating factor 0.74 ْ
W/ C
VGS Gate-to-Source voltage ±20 V
EAS Single pulse avalanche energy ② 235 mJ
EAR Repetitive avalanche energy TBD
TJ Operating Junction and
–55 to +175 ْC
TSTG Storage Temperature Range

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-case — 1.31 —
ْC/W
RθJA Junction-to-ambient — — 62

Electrical Characteristics @TJ=25 ْC (unless otherwise specified)

Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source breakdown voltage 60 — — V VGS=0V,ID=250μA
RDS(on) Static Drain-to-Source on-resistance — 12 14 mΩ VGS=10V,ID=30A
VGS(th) Gate threshold voltage 2.0 4.0 V VDS=VGS,ID=250μA
gfs Forward transconductance — 60 — S VDS=5V,ID=30A
— — 2 VDS=60V,VGS=0V
IDSS Drain-to-Source leakage current μA VDS=60V,
— — 10
VGS=0V,TJ=150ْC
Gate-to-Source forward leakage — — 100 VGS=20V
IGSS nA
Gate-to-Source reverse leakage — — -100 VGS=-20V

©Silikron Semiconductor Corporation 2009.12.15 Version: 2.3 page 1of5

 SSF6014
Qg Total gate charge — 45 — ID=30A
Qgs Gate-to-Source charge — 4 — nC VDD=30V
Qgd Gate-to-Drain("Miller") charge — 15 — VGS=10V
td(on) Turn-on delay time — 14.6 — VDD=30V
tr Rise time — 14.2 — ID=2A ,RL=15Ω
nS
td(off) Turn-Off delay time — 40 — RG=2.5Ω
tf Fall time — 7.3 — VGS=10V
Ciss Input capacitance — 1480 — VGS=0V
Coss Output capacitance — 190 — pF VDS=25V
Crss Reverse transfer capacitance — 135 — f=1.0MHZ

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions
Continuous Source Current MOSFET symbol
IS — — 60
(Body Diode) showing the
A
Pulsed Source Current integral reverse
ISM — — 240
(Body Diode) ① p-n junction diode.
VSD Diode Forward Voltage — — 1.3 V TJ=25ْC,IS=40A,VGS=0V ③
trr Reverse Recovery Time — 33 — nS TJ=25ْC,IF=60A
Qrr Reverse Recovery Charge — 61 — nC di/dt=100A/μs ③
ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, VDD = 30V,Id=37A
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C

EAS test circuit: Gate charge test circuit:

L V dd
BV dss
Vgs

RL

VDD
RG
1mA RG

©Silikron Semiconductor Corporation 2009.12.15 Version: 2.3 page 2of5

 SSF6014
Switch Time Test Circuit： Switch Waveforms:

Transfer Characteristic Capacitance

On Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature

©Silikron Semiconductor Corporation 2009.12.15 Version: 2.3 page 3of5

 SSF6014

Gate Charge Source-Drain Diode Forward Voltage

Safe Operation Area Max Drain Current vs. Junction Temperature

Transient Thermal Impedance Curve

©Silikron Semiconductor Corporation 2009.12.15 Version: 2.3 page 4of5

 SSF6014
MECHANICAL DATA:

TO220 PACKAGE OUTLINE DIMENSION_GN

E A

ФP
ϴ1
D
ФP1 D2

ϴ3
D1 ϴ2
b1
b
A1 ϴ4

e c E1

Dimension In Millimeters Dimension In Inches

Symbol
Min Nom Max Min Nom Max
A - 1.300 - - 0.051 -
A1 2.200 2.400 2.600 0.087 0.094 0.102
b - 1.270 - - 0.050 -
b1 1.270 1.370 1.470 0.050 0.054 0.058
c - 0.500 - - 0.020 -
D - 15.600 - - 0.614 -
D1 - 28.700 - - 1.130 -
D2 - 9.150 - - 0.360 -
E 9.900 10.000 10.100 0.390 0.394 0.398
E1 - 10.160 - - 0.400 -
ФP - 3.600 - - 0.142 -
ФP1 1.500 0.059
e 2.54BSC 0.1BSC
L 12.900 13.100 13.300 0.508 0.516 0.524
ϴ1 - 7 0
- - 70
-
ϴ2 - 70 - - 70 -
ϴ3 - 30
- 5 0
70
90
ϴ4 - 30 - 10 30 50

©Silikron Semiconductor Corporation 2009.12.15 Version: 2.3 page 5of5