STP80NF55-08

STB80NF55-08 STB80NF55-08-1
N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220
STripFET™ II POWER MOSFET

TYPE VDSS RDS(on) ID

STB80NF55-08/-1 55 V <0.008 Ω 80 A
STP80NF55-08
www.DataSheet4U.com 55 V <0.008 Ω 80 A
■ TYPICAL RDS(on) = 0.0065Ω
■ LOW THRESHOLD DRIVE 3
1 3
12
DESCRIPTION I2PAK
D2PAK TO-262
This Power MOSFET is the latest development of TO-263
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on- 3
2
resistance, rugged avalanche characteristics and 1
less critical alignment steps therefore a
remarkable manufacturing reproducibility. TO-220

APPLICATIONS
■ SOLENOID AND RELAY DRIVERS
INTERNAL SCHEMATIC DIAGRAM
■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ DC-DC CONVERTERS

■ AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 55 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 55 V
VGS Gate- source Voltage ± 20 V
ID(•) Drain Current (continuos) at TC = 25°C 80 A
ID Drain Current (continuos) at TC = 100°C 57 A
IDM(••) Drain Current (pulsed) 320 A
Ptot Total Dissipation at TC = 25°C 300 W
Derating Factor 2 W/°C
EAS (1) Single Pulse Avalanche Energy 870 mJ
Tstg Storage Temperature
-55 to 175 °C
Tj Max. Operating Junction Temperature
(•) Current limited by package (1) Starting Tj = 25 oC, ID = 40A, VDD = 30V
(••) Pulse width limited by safe operating area.
March 2002 1/11
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Tl Maximum Lead Temperature For Soldering Purpose Typ 300 °C

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source ID = 250 µA VGS = 0 55 V

Breakdown Voltage
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IDSS Zero Gate Voltage VDS = Max Rating 1 µA
Drain Current (VGS = 0) VDS = Max Rating TC = 125°C 10 µA

Gate-body Leakage VGS = ± 20V ±100 nA

IGSS
Current (VDS = 0)

ON (*)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 2 3 4 V

RDS(on) Static Drain-source On VGS = 10 V ID = 40 A 0.0065 0.008 Ω

Resistance

DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (*) Forward Transconductance VDS = 15 V ID = 18 A 40 S

Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 3850 pF

Coss Output Capacitance 800 pF
Crss Reverse Transfer 250 pF
Capacitance

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ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(on) Turn-on Delay Time VDD = 30 V ID = 40 A 25 ns

tr Rise Time RG = 4.7 Ω VGS = 10 V 85 ns
(Resistive Load, Figure 3)
Qg Total Gate Charge VDD = 44V ID = 80 A VGS= 10V 115 155 nC
Qgs Gate-Source Charge 24 nC
Qgd Gate-Drain Charge 46 nC

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SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(off) Turn-off Delay Time VDD = 30 V ID = 40 A 70 ns

tf Fall Time RG = 4.7Ω, VGS = 10 V 25 ns
(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 80 A
ISDM (•) Source-drain Current (pulsed) 320 A

VSD (*) Forward On Voltage ISD = 80 A VGS = 0 1.5 V

trr Reverse Recovery Time ISD = 80 A di/dt = 100A/µs 80 ns

Qrr Reverse Recovery Charge VDD = 25 V Tj = 150°C 245 nC
IRRM Reverse Recovery Current (see test circuit, Figure 5) 6.4 A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.

Safe Operating Area Thermal Impedance

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Output Characteristics Transfer Characteristics

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Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

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Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

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Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature.

. .

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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

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Fig. 3: Switching Times Test Circuits For Resistive Fig. 4: Gate Charge test Circuit
Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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D2PAK MECHANICAL DATA

mm. inch.
DIM.
MIN. TYP. MAX. MIN. TYP. TYP.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.028 0.037

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B2 1.14 1.7 0.045 0.067
C 0.45 0.6 0.018 0.024
C2 1.21 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.394 0.409
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.591 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.069
M 2.4 3.2 0.094 0.126
R 0.4 0.016
V2 0° 8° 0° 8°

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TO-262 (I2PAK) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

www.DataSheet4U.com B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106

E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531

L1 3.48 3.78 0.137 0.149

L2 1.27 1.4 0.050 0.055

C
A

A1
C2

B2
B

e
E

L1

L2 D L
P011P5/E

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TO-220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
www.DataSheet4U.com E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151

E
A

D
C

D1

L2
F1

G1

H2
G

Dia.
F
F2

L5
L9
L7
L6 L4
P011C

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D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)*

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TAPE AND REEL SHIPMENT (suffix ”T4”)*

REEL MECHANICAL DATA
mm inch
DIM.
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

BASE QTY BULK QTY

1000 1000
TAPE MECHANICAL DATA
mm inch
DIM.
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082
R 50 1.574
T 0.25 0.35 .0.0098 0.0137
W 23.7 24.3 0.933 0.956

* on sales type
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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