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PD 91471B

IRG4PC50UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features C

• UltraFast: Optimized for high operating VCES = 600V

frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V
G
parameter distribution and higher efficiency than
Generation 3 @VGE = 15V, IC = 27A
E
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in n-ch an nel
bridge configurations
• Industry standard TO-247AC package
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
TO-247AC
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 55
IC @ TC = 100°C Continuous Collector Current 27
ICM Pulsed Collector Current Q 220 A
ILM Clamped Inductive Load Current R 220
IF @ TC = 100°C Diode Continuous Forward Current 25
IFM Diode Maximum Forward Current 220
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 200
W
PD @ TC = 100°C Maximum Power Dissipation 78
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ------ ------ 0.64
RθJC Junction-to-Case - Diode ------ ------ 0.83 °C/W
RθCS Case-to-Sink, flat, greased surface ------ 0.24 ------
RθJA Junction-to-Ambient, typical socket mount ----- ----- 40
Wt Weight ------ 6 (0.21) ------ g (oz)

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IRG4PC50UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 600 ---- ---- V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage ---- 1.65 2.0 IC = 27A VGE = 15V
---- 2.0 ---- V IC = 55A See Fig. 2, 5
---- 1.6 ---- IC = 27A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance T 16 24 ---- S VCE = 100V, IC = 27A
ICES Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V
---- ---- 6500 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop ---- 1.3 1.7 V IC = 25A See Fig. 13
---- 1.2 1.5 IC = 25A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) ---- 180 270 IC = 27A
Qge Gate - Emitter Charge (turn-on) ---- 25 38 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) ---- 61 90 VGE = 15V
td(on) Turn-On Delay Time ---- 46 ---- TJ = 25°C
tr Rise Time ---- 25 ---- ns IC = 27A, VCC = 480V
td(off) Turn-Off Delay Time ---- 140 230 VGE = 15V, RG = 5.0Ω
tf Fall Time ---- 74 110 Energy losses include "tail" and
Eon Turn-On Switching Loss ---- 0.99 ---- diode reverse recovery.
Eoff Turn-Off Switching Loss ---- 0.59 ---- mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss ---- 1.58 1.9
td(on) Turn-On Delay Time ---- 44 ---- TJ = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time ---- 27 ---- ns IC = 27A, VCC = 480V
td(off) Turn-Off Delay Time ---- 240 ---- VGE = 15V, RG = 5.0Ω
tf Fall Time ---- 130 ---- Energy losses include "tail" and
Ets Total Switching Loss ---- 2.3 ---- mJ diode reverse recovery.
LE Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package
Cies Input Capacitance ---- 4000 ---- VGE = 0V
Coes Output Capacitance ---- 250 ---- pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance ---- 52 ---- ƒ = 1.0MHz
trr Diode Reverse Recovery Time ---- 50 75 ns TJ = 25°C See Fig.
---- 105 160 TJ = 125°C 14 IF = 25A
Irr Diode Peak Reverse Recovery Current ---- 4.5 10 A TJ = 25°C See Fig.
---- 8.0 15 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge ---- 112 375 nC TJ = 25°C See Fig.
---- 420 1200 TJ = 125°C 16 di/dt 200A/µs
di(rec)M/dt Diode Peak Rate of Fall of Recovery ---- 250 ---- A/µs TJ = 25°C
During tb ---- 160 ---- TJ = 125°C

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IRG4PC50UD
40

D u ty c ycl e: 5 0%
T J = 1 25 °C
T sin k = 90 °C
Ga te d rive a s spe cifi ed
30 Tu rn -on lo sses inclu de
Loa d C urre nt (A)

effe cts o f reve rse re cov ery

P o w e r D issipa tion = 4 0 W

6 0 % o f rate d
20 v o lta g e

10

0 A
0.1 1 10 100

f, Freq uen cy (kH z)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

1000 1000
I C , C o lle ctor-to-E m itter Cu rre n t (A )

I C , C ollec to r-to-Em itte r C u rre nt (A)

100

100

TJ = 1 5 0°C
T J = 1 5 0 °C
10

T J = 2 5 °C
T J = 2 5 °C 10

VGE = 15V VC C = 1 0 V
2 0 µ s P U L S E W ID T H A 5 µ s P U LS E W ID TH A
0.1 1
0 1 10 4 6 8 10 12
VC E , C o lle c to r-to -E m itte r V o lta g e (V ) VG E , G a te -to -E m itte r V o lta g e (V )

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4PC50UD

60
V G E = 15 V 2.5
V G E = 1 5V

V CE , C olle ctor-to-E m itte r V oltage (V)

8 0 µs P U L S E W ID TH
M aximum D C Collector Current (A )

50

IC = 5 4 A
40 2.0

30
IC = 2 7 A

20 1.5
IC = 14 A
10

0 1.0 A
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
T C , C ase Tem perature (°C) T J , Ju n c tio n Te m p e ra tu re (°C )

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature

1
T h e rm a l R e s p o n se (Z thJ C )

D = 0 .5 0

0 .2 0
0 .1
0 .1 0
PD M

0 .0 5 t
1
S IN G L E P U L S E t2
0 .0 2 (T H E R M A L R E S P O N S E )
N ote s :
0 .0 1 1 . D u ty f ac t or D = t /t
1 2
2 . P e a k TJ = P D M x Z th J C + T C
0 .0 1
0 .0 0 0 0 1 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10
t 1 , R e c ta n g u la r P u ls e D ura tio n (s e c )

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

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IRG4PC50UD

8000 20
V GE = 0V , f = 1M Hz VC E = 400V

V G E , Gate-to-Emitter Voltage (V)

C ie s = C ge + C gc , C ce SH O R TED I C = 27A
C re s = C gc
C oes = C ce + C gc 16
C, Capacitance (pF)

6000
C ie s
12

4000

8
C oes

2000 C res 4

A 0
A
0
1 10 100 0 40 80 120 160 200

V C E , C o lle c to r-to -E m itte r V o lta g e (V ) Q g , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

3.0 10
VCC = 480V
VGE = 15V
TJ = 2 5 °C
Total Switching Losses (mJ)

I C = 54A
T ota l S w itching Loss es (m J)

IC = 27A
2.5

I C = 27A

2.0 1

I C = 14A

1.5

RG = 5.0 Ω
VG E = 15V
1.0 A VC C = 480V A
0.1
0 10 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160

R G , G a te R e s is ta n c e ( Ω) TJ , Junction Temperature (°C)

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
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IRG4PC50UD
8.0 1000
RG = 5 .0 Ω VGGE E= 2 0V
TJ = 1 5 0 °C T J = 125 °C
V CC = 480V

I C , Collector-to-E m itter C urrent (A)

T otal Sw itch ing Los ses (m J )

V GE = 15V
6.0

100 S A FE O P E R A TIN G A R E A

4.0

10

2.0

0.0 A 1
0 10 20 30 40 50 60 1 10 100 1000
I C , C o lle c to r-to-E m itte r C u rre n t (A ) V C E , Collecto r-to-E m itter V oltage (V )

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current
100
In sta n ta n e o u s F o rw a rd C u rre n t - I F (A )

TJ = 1 50 °C

TJ = 1 25 °C

10 TJ = 25 °C

1
0.6 1.0 1.4 1.8 2.2 2.6

F o rw a rd V o lta g e D ro p - V FM (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

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IRG4PC50UD
140 100

VR = 2 0 0 V
VR = 2 0 0 V
TJ = 125°C T J = 1 2 5 °C
TJ = 25°C T J = 2 5 °C
120

100
I F = 5 0A

I IR R M - (A )
t rr - (ns)

I F = 2 5A
80 I F = 50A 10

I F = 25A
I F = 10 A
IF = 10A
60

40

20 1
100 1000 100 1000
di f /dt - (A/µs) d i f /d t - (A /µ s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

1500 10000
VR = 2 0 0 V VR = 2 0 0 V
T J = 1 2 5 °C T J = 1 2 5 °C
T J = 2 5 °C T J = 2 5 °C
1200
di(rec)M/dt - (A /µ s)
Q R R - (n C )

900

I F = 5 0A I F = 10 A
1000

600
I F = 2 5A

I F = 25 A
300

I F = 1 0A I F = 5 0A
0 100
100 1000 100 1000
d i f /d t - (A /µ s ) di f /dt - (A /µs)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt

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IRG4PC50UD

90% Vge
+Vge

Same ty pe
device as Vce
D .U.T.

9 0 % Ic
10% Vce
Ic Ic
430µF 5 % Ic
80%
of Vce D .U .T.
td (o ff) tf

∫
t1 + 5 µ S
Eoff = V c e ic d t
t1

Fig. 18a - Test Circuit for Measurement of

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

∫
trr
G A T E V O L T A G E D .U .T . trr
Q rr = id d t
Ic
tx
1 0 % +V g
+Vg
tx
1 0 % Irr
10% Vcc
V cc
D UT VO LTAG E
Vce
AN D CU RRE NT V pk
Irr
1 0 % Ic
Vcc Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
5% Vce
td (o n ) tr

∫
t2

∫
E o n = V ce ie d t t4
t1 E re c = V d id d t
t3
t1 t2 D IO D E R E V E R S E
REC OVERY ENER GY

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr

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IRG4PC50UD

V g G A T E S IG N A L
D E V IC E U N D E R T E S T

C U R R E N T D .U .T .

V O L T A G E IN D .U .T .

C U R R E N T IN D 1

t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L D.U.T. 480V
RL=
4 X IC @25°C
1000V Vc*
0 - 480V
50V
6000µ F
100 V

Figure 19. Clamped Inductive Load Test Figure 20. Pulsed Collector Current
Circuit Test Circuit

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IRG4PC50UD
Notes:
Q Repetitive rating: VGE = 20V; pulse width limited by maximum junction temperature
(figure 20)
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.

Case Outline — TO-247AC

NOTE S:
3 .6 5 (.1 4 3 ) -D-
5 .3 0 (.2 0 9 ) 1 D IM E N S IO N S & T O LE R A N C IN G
1 5 .9 0 (.6 2 6 ) 3 .5 5 (.1 4 0 ) P E R A N S I Y 14 .5M , 1 98 2 .
1 5 .3 0 (.6 0 2 ) 4 .7 0 (.1 8 5 )
0 .2 5 ( .0 1 0 ) M D B M 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
-B- -A- 2.5 0 ( .0 8 9)
3 D IM E N S IO N S A R E S H O W N
1.5 0 ( .0 5 9) M IL LIM E T E R S (IN C H E S ).
5 .5 0 (.2 17 ) 4 4 C O N F O R M S T O J E D E C O U T L IN E
T O -2 4 7A C .
2 0 .3 0 (.8 0 0 )
1 9 .7 0 (.7 7 5 ) 5.5 0 (.2 1 7)
2X
4.5 0 (.1 7 7) LEAD A S S IG N M E N T S
1- GAT E
1 2 3 2- COLLECTO R
3- E M IT T E R
4- COLLECTO R
-C-
1 4 .8 0 (.5 8 3 ) 4 .3 0 (.1 7 0 )
* 1 4 .2 0 (.5 5 9 ) 3 .7 0 (.1 4 5 ) * LO N G E R LE A D E D (2 0m m )
V E R S IO N A V A IL A B L E (T O -2 47 A D )
T O O R D E R A D D "-E " S U F F IX
TO PAR T NUM BER
2 .4 0 (.0 9 4 ) 1 .4 0 ( .0 56 ) 0 .8 0 (.0 3 1 )
2 .0 0 (.0 7 9 ) 3X 3X
1 .0 0 ( .0 39 ) 0 .4 0 (.0 1 6 )
2X
0.2 5 (.0 1 0 ) M C A S 2 .6 0 ( .1 0 2 )
5 .4 5 (.2 1 5 ) 2 .2 0 ( .0 8 7 )
3 .4 0 (.1 3 3 )
2X 3 .0 0 (.1 1 8 )

CO NF O RM S TO J EDEC O U TL IN E TO -2 47AC (T O -3P)

D im e n s io n s in M illim e te rs a n d (In c h e s )

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
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