DISCRETE SEMICONDUCTORS

DATA SHEET

alfpage

M3D088

BBY39
UHF variable capacitance double
diode
Product specification 1996 May 03
Supersedes data of November 1993
Philips Semiconductors Product specification

UHF variable capacitance double diode BBY39

FEATURES
• Excellent linearity
• Small plastic SMD package
• C28: 1.9 pF; ratio: 8.3.
handbook, halfpage 3

APPLICATIONS 3

• Electronic tuning in UHF television 1 2

tuners
• VCO.
1 2 MAM169

DESCRIPTION
The BBY39 is a variable capacitance
double diode with a common cathode, Marking code: S12.
fabricated in planar technology, and
encapsulated in the SOT23 small
Fig.1 Simplified outline (SOT23), pin configuration and symbol.
plastic SMD package.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
VR continuous reverse voltage − 30 V
IF continuous forward current − 20 mA
Tstg storage temperature −55 +150 °C
Tj operating junction temperature −55 +125 °C

ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

IR reverse current VR = 28 V; see Fig.3 − − 10 nA
VR = 28 V; Tj = 85 °C; see Fig.3 − − 200 nA
rs diode series resistance f = 470 MHz; note 1 − − 1.2 Ω
Cd diode capacitance VR = 1 V; f = 1 MHz; see Figs 2 and 4 − 16.5 − pF
VR = 28 V; f = 1 MHz; see Figs 2 and 4 1.6 − 2 pF

C d ( 1V ) capacitance ratio f = 1 MHz 8 − −

--------------------
C d ( 28V )

Note
1. VR is the value at which Cd = 9 pF.

1996 May 03 2
Philips Semiconductors Product specification

UHF variable capacitance double diode BBY39

GRAPHICAL DATA

MBE874
20
handbook, full pagewidth
Cd
(pF)

16

12

0
10 −1 1 10 VR (V) 10 2

f = 1 MHz; Tj = 25 °C.

Fig.2 Diode capacitance as a function of reverse voltage; typical values.

MLC816 MLC815
10 3 10 3
handbook, halfpage
handbook, halfpage

IR TC d
(nA) (K−1)

102 10 4

10 10 5
0 50 o 100 10 1 1 10 102
T j ( C) VR (V)

Fig.4 Temperature coefficient of diode

Fig.3 Reverse current as a function of junction capacitance as a function of reverse
temperature; maximum values. voltage; typical values.

1996 May 03 3
Philips Semiconductors Product specification

UHF variable capacitance double diode BBY39

PACKAGE OUTLINE

3.0
handbook, full pagewidth 2.8
B
1.9
0.150
0.55 0.090 0.95 0.2 M A
A
0.45
2 1

0.1
10 o max 2.5
max 1.4
1.2 max
10 o
max

1.1
0.48
max 0.1 M A B
30 o 0.38 MBC846
max
TOP VIEW

Dimensions in mm.

Fig.5 SOT23.

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 May 03 4