HN1B01F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
HN1B01F
Audio-Frequency General-Purpose Amplifier Applications
Unit: mm
Q1:
z High voltage and high current
: VCEO = −50 V, IC = −150 mA (max)
z High hFE : hFE = 120~400
z Excellent hFE linearity
: hFE (IC = −0.1 mA) / hFE (IC = −2 mA) = 0.95 (typ.)
Q2:
z High voltage and high current
: VCEO = 50 V, IC = 150 mA (max)
z High hFE : hFE = 120~400
z Excellent hFE linearity
: hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ.)
JEDEC ―
JEITA ―
TOSHIBA 2-3N1A
Weight: 0.015 g (typ.)
Q1 Absolute Maximum Ratings (Ta = 25°C) Marking
Characteristic Symbol Rating Unit
Collector-base voltage VCBO −50 V
Collector-emitter voltage VCEO −50 V
Emitter-base voltage VEBO −5 V
Collector current IC −150 mA
Base current IB −50 mA
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HN1B01F
Q2 Absolute Maximum Ratings (Ta = 25°C) Equivalent Circuit (Top View)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 150 mA
Base current IB 30 mA
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Collector power dissipation PC* 300 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
Q1 Electrical Characteristics (Ta = 25°C)
Test
Characteristic Symbol Test Condition Min Typ. Max Unit
Circuit
Collector cut-off current ICBO ― VCB = −50 V, IE = 0 ― ― −0.1 μA
Emitter cut-off current IEBO ― VEB = −5 V, IC = 0 ― ― −0.1 μA
DC current gain hFE (Note) ― VCE = −6 V, IC = −2 mA 120 ― 400
Collector-emitter
VCE (sat) ― IC = −100 mA, IB = −10 mA ― −0.1 −0.3 V
saturation voltage
Transition frequency fT ― VCE = −10 V, IC = −1 mA ― 120 ― MHz
VCB = −10 V, IE = 0,
Collector output capacitance Cob ― ― 4 ― pF
f = 1 MHz
Q2 Electrical Characteristics (Ta = 25°C)
Test
Characteristic Symbol Test Condition Min Typ. Max Unit
Circuit
Collector cut-off current ICBO ― VCB = 60 V, IE = 0 ― ― 0.1 μA
Emitter cut-off current IEBO ― VEB = 5 V, IC = 0 ― ― 0.1 μA
DC current gain hFE (Note) ― VCE = 6 V, IC = 2 mA 120 ― 400
Collector-emitter
VCE (sat) ― IC = 100 mA, IB = 10 mA ― 0.1 0.25 V
saturation voltage
Transition frequency fT ― VCE = 10 V, IC = 1 mA ― 150 ― MHz
VCB = 10 V, IE = 0,
Collector output capacitance Cob ― ― 2 ― pF
f = 1 MHz
Note: hFE Classification Y (Y): 120~240, GR (G): 200~400
( ) Marking symbol
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Q1 (PNP Transistor)
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HN1B01F
Q2 (NPN Transistor)
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(Q1, Q2 Common)
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RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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