TLV3501
TLV3501
TLV3502
SBOS321D − MARCH 2005 − REVISED JULY 2005
THRESHOLD DETECTOR
D ZERO-CROSSING DETECTOR 7
D WINDOW COMPARATOR 6
Fall
5
TLV350x RELATED PRODUCTS
4
FEATURES PRODUCT
Precision Ultra-Fast, Low-Power Comparator TLC3016
3
Differential Output Comparator TL712 0 20 40 60 80 100
High-Speed Op Amp, 16-Bit Accurate, 150MHz OPA300
Overdrive Voltage (mV)
High-Speed Op Amp, Rail-to-Rail, 38MHz OPA350
High-Speed Op Amp with Shutdown, 250MHz OPA357
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
Copyright 2005, Texas Instruments Incorporated
! !
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SBOS321D − MARCH 2005 − REVISED JULY 2005
ORDERING INFORMATION(1)
PRODUCT PACKAGE-LEAD PACKAGE DESIGNATOR PACKAGE MARKING
TLV3501 SOT23-6 DBV NXA
TLV3501 SO-8 D TLV3501A
TLV3502 SOT23-8 DCN NXC
TLV3502 SO-8 D TLV3502A
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site
at www.ti.com.
PIN CONFIGURATIONS
TLV3501 TLV3502
TLV3501
NXA
(1) Pin 1 of the SOT23-6 is determined by orienting the package marking as indicated on the diagram.
(2) NC indicates no internal connection.
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SBOS321D − MARCH 2005 − REVISED JULY 2005
ELECTRICAL CHARACTERISTICS
Boldface limits apply over the specified temperature range, TA = −40°C to +125°C.
At TA = +25°C and VS = +2.7V to +5.5V, unless otherwise noted.
TLV3501, TLV3502
PARAMETER CONDITION MIN TYP MAX UNITS
OFFSET VOLTAGE
Input Offset Voltage(1) VOS VCM = 0V, IO = 0mA ±1 ±6.5 mV
vs Temperature dVOS/dT TA = −40°C to +125°C ±5 µV/°C
vs Power Supply PSRR VS = 2.7V to 5.5V 100 400 µV/V
Input Hysteresis 6 mV
INPUT BIAS CURRENT
Input Bias Current IB VCM = VCC/2 ±2 ±10 pA
Input Offset Current(2) IOS VCM = VCC/2 ±2 ±10 pA
INPUT VOLTAGE RANGE
Common-Mode Voltage Range VCM (V−) − 0.2V (V+) + 0.2V V
Common-Mode Rejection CMRR VCM = −0.2V to (V+) + 0.2V 57 70 dB
VCM = −0.2V to (V+) + 0.2V 55 dB
INPUT IMPEDANCE
Common-Mode 1013 2 Ω pF
Differential 1013 4 Ω pF
SWITCHING CHARACTERISTICS
Propagation Delay Time(3) T(pd) ∆VIN = 100mV, Overdrive = 20mV 4.5 6.4 ns
∆VIN = 100mV, Overdrive = 20mV 7 ns
∆VIN = 100mV, Overdrive = 5mV 7.5 10 ns
∆VIN = 100mV, Overdrive = 5mV 12 ns
Propagation Delay Skew(4) ∆t(SKEW) ∆VIN = 100mV, Overdrive = 20mV 0.5 ns
Maximum Toggle Frequency fMAX Overdrive = 50mV, VS = 5V 80 MHz
Rise Time(5) tR 1.5 ns
Fall Time(5) tF 1.5 ns
OUTPUT
Voltage Output from Rail VOH,VOL IOUT = ±1mA 30 50 mV
SHUTDOWN
tOFF 30 ns
tON 100 ns
VL (comparator is enabled)(6) (V+) − 1.7V V
VH (comparator is disabled)(6) (V+) − 0.9V V
Input Bias Current of Shutdown Pin 2 pA
IQSD (quiescent current in shutdown) 2 µA
POWER SUPPLY
Specified Voltage VS +2.7 +5.5 V
Operating Voltage Range 2.2 to 5.5 V
Quiescent Current IQ VS = 5V, VO = High 3.2 5 mA
TEMPERATURE RANGE
Specified Range −40 +125 °C
Operating Range −40 +125 °C
Storage Range −65 +150 °C
Thermal Resistance qJA
SOT23-5 200 °C/W
SOT23-8 200 °C/W
SO-8 150 °C/W
(1) VOS is defined as the average of the positive and the negative switching thresholds.
(2) The difference between IB+ and IB−.
(3) Propagation delay cannot be accurately measured with low overdrive on automatic test equipment. This parameter is ensured by
characterization and testing at 100mV overdrive.
(4) The difference between the propagation delay going high and the propagation delay going low.
(5) Measured between 10% of VS and 90% of VS.
(6) When the shutdown pin is within 0.9V of the most positive supply, the part is disabled. When it is more than 1.7V below the most positive supply,
the part is enabled.
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SBOS321D − MARCH 2005 − REVISED JULY 2005
TYPICAL CHARACTERISTICS
At TA = +25°C, VS = +5V, and Input Overdrive = 100mV, unless otherwise noted.
Input
VIN (V)
VIN (V)
Input
0
5 VOD = 50mV
5
4
VOD = 100mV VOD = 50mV 4
3 VOD = 100mV VOD = 20mV
VOUT (V)
VOD = 20mV 3
VOUT (V)
2 VOD = 5mV
VOD = 5mV 2
1 1
0 0
−1 −1
−10 0 10 20 30 40 −10 0 10 20 30 40
Time (ns) Time (ns)
4.5 4.5
Rise
4.0 4.0
Fall
3.5 3.5
Rise
3.0 3.0
−40 −25 0 25 50 75 100 125 −40 −25 0 25 50 75 100 125
Temperature (_ C) Temperature (_ C)
8 8
Propagation Delay (ns)
7 7
6 6
Fall
5 5
Rise Fall
4 4
Rise
3 3
0 20 40 60 80 100 0 20 40 60 80 100
Capacitive Load (pF) Capacitive Load (pF)
4
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SBOS321D − MARCH 2005 − REVISED JULY 2005
8
Propagation Delay (ns)
5 70
Fall
4
Rise
3 50
2 3 4 5 6 −40 −25 0 25 50 75 100 125
Supply Voltage (V) Temperature (_ C)
10
VIN (mV)
500
VIN (mV)
0
0
−10
5 −500
4 2
3
VOUT (V)
1
VOUT (V)
2
0
1
0 −1
−1 −2
0 20 40 60 80 100 0 2 4 6 8 10 12 14 16 18 20
Time (ns) Time (ns)
3.4 3.4
3.2 3.2
3.0 3.0
2.8 2.8
2.6 2.6
2.4 2.4
2.2 2.2
2.0 2.0
2 3 4 5 6 −40 −25 0 25 50 75 100 125
Supply Voltage (V) Temperature (_ C)
5
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SBOS321D − MARCH 2005 − REVISED JULY 2005
6
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SBOS321D − MARCH 2005 − REVISED JULY 2005
R1 = 51Ω R 2 = 10kΩ
0.1µF 2.2µF
VREF
VIN
TLV3501 VOUT
VREF
Figure 2. Adding Hysteresis to the TLV350x
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SBOS321D − MARCH 2005 − REVISED JULY 2005
RELAXATION OSCILLATOR
The TLV350x can easily be configured as a simple and VHI
inexpensive relaxation oscillator. In Figure 4, the R2 TLV3502a
network sets the trip threshold at 1/3 and 2/3 of the supply.
Since this is a high-speed circuit, the resistor values are
rather low in order to minimize the effect of parasitic VIN VOUT
capacitance. The positive input alternates between 1/3 of
V+ and 2/3 of V+ depending on whether the output is low SN74LVC1G02
or high. The time to charge (or discharge) is 0.69R1C. TLV3502b
Therefore, the period is 1.38R1C. For 62pF and 1kΩ as VLO
shown in Figure 4, the output is calculated to be 10.9MHz.
An implementation of this circuit oscillated at 9.6MHz.
V
Parasitic capacitance and component tolerances explain
the difference between theory and actual performance. VOUT
VIN
VHI
VLO
VC
2/3 (V+)
1/3 (V+) t
Time
V+ 1.38R1C
C VS = 5V R
62pF
1 Figure 5. Window Comparator—Active High
1kΩ
VOUT
VLO
t TLV3502a
R2 R2
5kΩ 5kΩ f = 10MHz
V+
R2 VIN VOUT
5kΩ
SN74AHC00
TLV3502b
VHI
VOUT
Figure 4. Relaxation Oscillator
VIN
−VIN
SD
VOUT
C2
RT2 C1
RT1
DUT
9
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SBOS321D − MARCH 2005 − REVISED JULY 2005
−VIN
SD
VOUT
RT2
RT1
DUT
C1 C2
GND +VS
+VIN
+VS
−VIN C1 C2
RT2 100nF 2.2µF
50Ω
TLV3501 VOUT
+VIN
RT1
50Ω
Shutdown
10
PACKAGE OPTION ADDENDUM
www.ti.com 26-Jul-2005
PACKAGING INFORMATION
Orderable Device Status (1) Package Package Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Type Drawing Qty
TLV3501AID ACTIVE SOIC D 8 75 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
TLV3501AIDBVR ACTIVE SOT-23 DBV 6 3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
TLV3501AIDBVT ACTIVE SOT-23 DBV 6 250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
TLV3501AIDG4 ACTIVE SOIC D 8 75 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
TLV3501AIDR ACTIVE SOIC D 8 2500 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
TLV3501AIDRG4 ACTIVE SOIC D 8 2500 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
TLV3502AID ACTIVE SOIC D 8 75 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
TLV3502AIDCNR ACTIVE SOT23 DCN 8 3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
TLV3502AIDCNT ACTIVE SOT23 DCN 8 250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
TLV3502AIDR ACTIVE SOIC D 8 2500 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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to Customer on an annual basis.
Addendum-Page 1
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