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MOSFET Specs for Electronics Engineers

This document summarizes the specifications of the CJ2306 N-channel MOSFET from Jiangsu Changjiang Electronics Technology. The MOSFET has a maximum drain-source voltage of 30V, continuous drain current of 3.16A, and on-resistance as low as 0.038 ohms. It is suitable for applications such as load switches in portable devices and DC/DC converters. The MOSFET comes in a SOT-23 plastic package and has markings for identification.

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81 views2 pages

MOSFET Specs for Electronics Engineers

This document summarizes the specifications of the CJ2306 N-channel MOSFET from Jiangsu Changjiang Electronics Technology. The MOSFET has a maximum drain-source voltage of 30V, continuous drain current of 3.16A, and on-resistance as low as 0.038 ohms. It is suitable for applications such as load switches in portable devices and DC/DC converters. The MOSFET comes in a SOT-23 plastic package and has markings for identification.

Uploaded by

Calatorescuandreeas
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

SOT-23 Plastic-Encapsulate MOSFETS

SOT-23
CJ2306 N-Channel 30-V(D-S) MOSFET

FEATURE
TrenchFET Power MOSFET

1. GATE
2. SOURCE
APPLICATIONS 3. DRAIN
z Load Switch for Portable Devices
z DC/DC Converter

MARKING: S6

Maximum ratings (at TA=25℃ unless otherwise noted)

Parameter Symbol Value Unit


Drain-Source voltage VDS 30
V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ=150℃)a,b ID 3.16
Pulsed Drain Current IDM 20 A
a,b
Continuous Source Current(Diode Conduction) IS 0.62
a,b
Maximum Power Dissipation PD 0.75 W
Thermal Resistance from Junction to Ambient (t≤5s) RθJA 100 ℃/W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to150 ℃
Notes :
a. Surface Mounted on 1” ×1” FR4 board, t≤5s.
b. Pulse width limited by maximum junction temperature.

A,May,2012
Electrical characteristics (at TA=25℃ unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit


Static
Drain-Source Breakdown Voltage V(BR)DS VGS = 0V, ID =250µA 30
V
Gate-Threshold Voltage VGS(th) VDS =VGS, ID =250µA 1.0 3.0
Gate-Body Leakage IGSS VDS =0V, VGS =±20V ±100 nA
Zero Gate Voltage Drain Current IDSS VDS =30V, VGS =0V 0.5 µA
VGS =10V, ID =3.5A 0.038 0.047
Drain-Source On-Resistancea RDS(on) Ω
VGS =4.5V, ID =2.8A 0.052 0.065
Forward Transconductancea gfs VDS =4.5V, ID =2.5A 7.0 S
Diode Forward Voltage VSD IS=1.25A,VGS=0V 0.8 1.2 V
Dynamic
Gate Charge Qg VDS =15V,VGS =5V,ID =2.5A 3.0 4.5
Total Gate Charge Qgt 6 9
nC
Gate-Source Charge Qgs VDS =15V,VGS =10V,ID =2.5A 1.6
Gate-Drain Charge Qgd 0.6
Gate Resistance Rg f =1.0MHz 2.5 5 7.5 Ω
Input Capacitance Ciss 305
Output Capacitance Coss VDS =15V,VGS =0V,f =1MHz 65 pF
Reverse Transfer Capacitance Crss 29
Switching
Turn-On Delay Time td(on) 7 11
VDD=15V,
Rise Time tr 12 18
RL=15Ω, ID ≈1A, ns
Turn-Off Delay Time td(off) 14 25
VGEN=10V,Rg=6Ω
Fall Time tf 6 10
Notes :
a.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.

A,May,2012

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