SI2300

20V N-Channel Enhancement Mode MOSFET

VDS= 20V
RDS(ON), Vgs@ 4.5V, Ids@ 3.0A 70m Ω
RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 80m Ω

Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
High Power and Current handing capability
Ideal for Li ion battery pack applications

Package Dimensions

G S

SOT-23(PACKAGE)
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 2.70 3.10 G 1.90 REF.
B 2.40 2.80 H 1.00 1.30
C 1.40 1.60 K 0.10 0.20
D 0.35 0.50 J 0.40 -
E 0 0.10 L 0.85 1.15
F 0.45 0.55 M 0° 10°

Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter Symbol Limit Unit

Drain-Source Voltage VDS 20

V
Gate-Source Voltage VGS ± 12
Continuous Drain Current ID 2.3
1)
A
Pulsed Drain Current IDM 8
o
TA = 25 C 1.25
Maximum Power Dissipation
o
PD W
TA = 75 C 0.8
o
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C
2) o
Junction-to-Ambient Thermal Resistance (PCB mounted) RθJA 78 C/W

Notes
1) Pulse width limited by maximum junction temperature.
2) Surface Mounted on FR4 Board, t v 5 sec.

１
JinYu www.htsemi.com
semiconductor

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 SI2300
20V N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)

Parameter Symbol Test Condition Min. Typ. Miax. Unit
3)
Static

Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA 20 V

Drain-Source On-State Resistance RDS(on) VGS = 2.5V, ID = 2.0A 70.0 80.0
mΩ
Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID = 3.0A 60.0 70.0
Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA 0.6 0.76 V
Zero Gate Voltage Drain Current 0 IDSS VDS = 20V, VGS = 0V 1 uA
Gate Body Leakage IGSS VGS = ± 12V, VDS = 0V ±100 nA
Forward Transconductance gfs VDS = 5V, ID = 4..2A 5 S
4)
Dynamic

Total Gate Charge Qg 5.4 10

VDS = 10V, ID = 3.6A
Gate-Source Charge Qgs 0.65 nC
VGS = 4.5V
Gate-Drain Charge Qgd .
1.5
Turn-On Delay Time td(on) 12 25
Turn-On Rise Time tr VDD = 10V, RG = 6Ω 36 60
ns
Turn-Off Delay Time td(off) ID = 1A, VGS = 4.5V 34 60
Turn-Off Fall Time tf RL = 5.5 Ω 10 25
Input Capacitance Ciss 340
VDS = 10V, VGS = 0V
Output Capacitance Coss 115 pF
f = 1.0 MHz
Reverse Transfer Capacitance Crss 33
Source-Drain Diode

Max. Diode Forward Current IS 1.6 A

Diode Forward Voltage VSD IS = 1.6A, VGS = 0V 1.2 V
Notes
3) Short duration test pulse used to minimize self-heating effect.
4) Pulse test pulse width <=300us,duty cycle <= 2%.

２
JinYu www.htsemi.com
semiconductor

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 SI2300
20V N-Channel Enhancement Mode MOSFET

Output Characteristics Transfer Characteristics

10 10
VGS = 5 thru 2.5 V

8 8
2V
I D – Drain Current (A)

I D – Drain Current (A)

6 6

TC = 125C
4 4

2 0, 0.5, 1 V 1.5 V 2 25C

–55C
0 0
0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5

VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

0.15 1000

0.12 800
r DS(on)– On-Resistance (
)

C – Capacitance (pF)

VGS = 2.5 V
0.09 600
VGS = 4.5 V

0.06 400 Ciss

Coss
0.03 200
Crss

0 0
0 2 4 6 8 10 0 4 8 12 16 20

ID – Drain Current (A) VDS – Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

5 1.8
VDS = 10 V VGS = 4.5 V
ID = 3.6 A ID = 3.6 A
1.6
V GS – Gate-to-Source Voltage (V)

4
r DS(on)– On-Resistance (
)

1.4
(Normalized)

1.2

2
1.0

1
0.8

0 0.6
0 1 2 3 4 5 6 7 –50 0 50 100 150

Qg – Total Gate Charge (nC) TJ – Junction Temperature (C)

-3-

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JinYu www.htsemi.com
semiconductor

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 SI2300
20V N-Channel Enhancement Mode MOSFET

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

10 0.20

0.16

r DS(on)– On-Resistance ( W )
I S – Source Current (A)

0.12
TJ = 150C
ID = 3.6 A

TJ = 25C 0.08

0.04

1 0
0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8

VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)

Threshold Voltage Single Pulse Power

0.2 14

0.1 12

10
V GS(th) Variance (V)

–0.0 ID = 250 mA
Power (W)

8
–0.1
TC = 25C
6 Single Pulse
–0.2
4

–0.3
2

–0.4 0
–50 0 50 100 150 0.01 0.10 1.00 10.00

TJ – Temperature (C) Time (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1

0.05

0.02

Single Pulse
0.01
10–4 10–3 10–2 10–1 1 10 30

Square Wave Pulse Duration (sec)

-4-
４
JinYu www.htsemi.com
semiconductor

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