S T M9435

S amHop Microelectronics C orp.

P reliminary May.21,2004

P -C hannel E nhancement Mode Field E ffect Transistor

P R ODUC T S UMMAR Y
V DS S
-30V

F E AT UR E S
( m W ) Max

ID
-4.8A

R DS (ON)

S uper high dense cell design for low R DS (ON ).

55 @ V G S = -10V 85 @ V G S = -4.5V

R ugged and reliable. S urface Mount P ackage.

D
8

D
7

D
6

D
5

S O-8 1
1 2 3 4

ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)

P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit - 30 20 - 4.8 - 24 -1.7 2.5 -55 to 150 Unit V V A A A W C

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, Junction-to-Ambient a R JA 50 C /W

S T M9435
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
5

S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS
c

Condition
V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-5.3A V GS = -4.5V, ID = -4.2A V DS = -5V, V GS = -10V V DS = -5V, ID = - 5.3A

Min Typ C Max Unit

-30 -1 100 -1 -1.5 -2.5 45 75 -20 5 582 125 86 55 V uA nA V
m-ohm

OFF CHAR ACTE R IS TICS

Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage

ON CHAR ACTE R IS TICS b

Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance

85 m-ohm A S
PF PF PF

DYNAMIC CHAR ACTE R IS TICS

Input Capacitance Output Capacitance R everse Transfer Capacitance

C IS S C OS S CRSS
c

V DS =-15V, V GS = 0V f =1.0MH Z

S WITCHING CHAR ACTE R IS TICS

Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge

tD(ON) tr tD(OFF) tf Qg Q gs Q gd
2

V D = -15V ID = -1A V GE N = - 10V R GE N = 6 ohm R L = 15 ohm V DS =-15V,ID =-5.3A,V GS =-10V V DS =-15V,ID =-5.3A,V GS =-4.5V V DS =-15V, ID = -5.3A V GS =-10V

9 10 37 23 11.7 5.7 2.1 2.9

ns ns ns ns nC nC nC nC

S T M9435
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
Diode Forward Voltage

S ymbol
VSD

Condition
V GS = 0V, Is =-1.7A

Min Typ C Max Unit

-0.84 -1.2 V

DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b

Notes a.Surface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%. c.Guaranteed by design, not subject to production testing.
25
-V G S =10,9,8,7,6,5V

25 125 C

20

20

-I D , Drain C urrent (A)

-I D , Drain C urrent (A)

15

15

25 C

-55 C

10 5 0
-V G S =3.5V

10

5 0

10

12

0.8

1.6

2.4

3.2

4.0

4.8

-V DS , Drain-to-S ource Voltage (V )

-V G S , G ate-to-S ource Voltage (V )

F igure 1. Output C haracteris tics

R DS (ON) , On-R es is tance(Ohms ) (Normalized)
900 750 1.8 1.6 1.4 1.2 1.0 0.8

F igure 2. Trans fer C haracteris tics

V G S =-10V I D =-5.3A

C , C apacitance (pF )

600 450 300 150 0

C is s

C os s C rs s 0 5 10 15 20 25 30

0.6 -55

-25

25

50

75

100

125

-V DS , Drain-to S ource Voltage (V )

T j, J unction T emperature ( C )

F igure 3. C apacitance

F igure 4. On-R es is tance Variation with Temperature

S T M9435
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S I D =-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 I D =-250uA

T j, J unction T emperature ( C )

T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation with T emperature

10

F igure 6. B reakdown V oltage V ariation with T emperature

20.0 V G S =0V

gF S , T rans conductance (S )

-Is , S ource-drain current (A)

20

8 6 4 2 V DS =-15V 0 0 5 10 15

10.0

1.0 0.4 0.6 0.7 0.9 1.1 1.3

-I DS , Drain-S ource C urrent (A)

-V S D , B ody Diode F orward V oltage (V )

F igure 7. T rans conductance V ariation with Drain C urrent

10
-V G S , G ate to S ource V oltage (V ) -I D , Drain C urrent (A)

F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent

50

8 6 4 2 0 0

V DS =-15V I D =-5.3A

10
RD
S

) ON

L im

it
10

10
1s
DC

ms

0m

0.1 0.03

V G S =-10V S ingle P ulse T A =25 C 0.1 1 10 30 50

10

12

14

16

Qg, T otal G ate C harge (nC )

-V DS , Drain-S ource V oltage (V )

F igure 9. G ate C harge 4

F igure 10. Maximum S afe O perating Area

S T M9435
-V DD ton V IN D VG S R GE N G
90%

toff tr
90%

RL V OUT

td(on) V OUT

td(off)
90% 10%

tf

10%

V IN

50% 10%

50%

INVE R TE D P ULS E WIDTH

F igure 11. S witching T es t C ircuit

F igure 12. S witching Waveforms

r(t),Normalized E ffective T ransient T hermal Impedance

1 Duty C ycle=0.5

0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10

-4

P DM t1 1. 2. 3. 4. 10
-2

t2

R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100

10

-3

10

-1

S quare Wave P uls e Duration (s ec)

F igure 13. Normalized T hermal T rans ient Impedance C urve

S T M9435
PAC K AG E OUT LINE DIME NS IONS S O-8

1 L

E D
0.015X45

e
0.05 TYP.

0.016 TYP.

A1

0.008 TYP.

S Y MB OLS A A1 D E H L

MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0

INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8

S T M9435
SO-8 Tape and Reel Data
SO-8 Carrier Tape

unit:
PACKAGE SOP 8N 150 A0
6.40

B0
5.20

K0
2.10

D0
1.5 (MIN)

D1
1.5 + 0.1 - 0.0

E
12.0 0.3

E1
1.75

E2
5.5 0.05

P0
8.0

P1
4.0

P2
2.0 0.05

T
0.3 0.05

SO-8 Reel

UNIT:

TAPE SIZE
12

REEL SIZE
330

M
330 1

N
62 1.5

W
12.4 + 0.2

W1
16.8 - 0.4

H
12.75 + 0.15

S
2.0 0.15

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