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BD810 Silicon PNP Transistor Specs

The document provides the product specification for the BD810 silicon PNP power transistor from SavantIC Semiconductor. Key details include: - It has a TO-220C package and is designed to complement the BD809 transistor for use in high power audio amplifiers. - Absolute maximum ratings include collector-base voltage of -80V, collector-emitter voltage of -80V, collector current of -10A, and junction temperature of 150°C. - Thermal characteristics include a maximum junction to case thermal resistance of 1.39°C/W. Electrical characteristics include a minimum DC current gain of 30 at 2A collector current and a typical collector-emitter saturation voltage of -1

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73 views3 pages

BD810 Silicon PNP Transistor Specs

The document provides the product specification for the BD810 silicon PNP power transistor from SavantIC Semiconductor. Key details include: - It has a TO-220C package and is designed to complement the BD809 transistor for use in high power audio amplifiers. - Absolute maximum ratings include collector-base voltage of -80V, collector-emitter voltage of -80V, collector current of -10A, and junction temperature of 150°C. - Thermal characteristics include a maximum junction to case thermal resistance of 1.39°C/W. Electrical characteristics include a minimum DC current gain of 30 at 2A collector current and a typical collector-emitter saturation voltage of -1

Uploaded by

luis perdigon
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors BD810

DESCRIPTION
·With TO-220C package
·Complement to type BD809
·DC current gain
: hFE = 30 (Min) @ IC = 2.0 Adc

APPLICATIONS
·Designed for use in high power audio
amplifiers utilizing complementary or
quasi complementary circuits.

PINNING

PIN DESCRIPTION

1 Emitter

Collector;connected to
2
mounting base

3 Base

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -80 V

VCEO Collector-emitter voltage Open base -80 V

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -10 A

IB Base current -6 A

PD Total power dissipation TC=25 90 W

Tj Junction temperature 150

Tstg Storage temperature -55~150

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal resistance junction to case 1.39 /W


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors BD810

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A; IB=0 -80 V

VCEsat Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A -1.1 V

VBE Base-emitter voltage IC=-4A ; VCE=-2V -1.6 V

ICBO Collector cut-off current VCB=-80V; IE=0 -1.0 mA

IEBO Emitter cut-off current VEB=-5V; IC=0 -2.0 mA

hFE-1 DC current gain IC=-2A ; VCE=-2V 30

hFE-2 DC current gain IC=-4A ; VCE=-2V 15

fT Transition frequency IC=-1A ; VCE=-10V;f=1.0MHz 1.5 MHz

2
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors BD810

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

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