25AA640/25LC640: 64K SPI Bus Serial EEPROM
25AA640/25LC640: 64K SPI Bus Serial EEPROM
DS21223H-page  1
25AA640/25LC640
Device Selection Table
Features:
 Low-Power CMOS Technology
- Write current: 3 mA, typical
- Read current: 500 A, typical
- Standby current: 500 nA, typical
 8192 x 8 Bit Organization
 32 Byte Page
 Write Cycle Time: 5 ms max.
 Self-Timed Erase and Write Cycles
 Block Write Protection
- Protect none, 1/4, 1/2 or all of array
 Built-in Write Protection
- Power on/off data protection circuitry
- Write enable latch
- Write-protect pin
 Sequential Read
 High Reliability
- Data retention: > 200 years
- ESD protection: > 4000V
 8-pin PDIP, SOIC and TSSOP Packages
 Temperature Ranges Supported:
- Industrial (I): -40C to +85C
- Automotive (E): -40C to +125C
Description:
The  Microchip  Technology  Inc.  25AA640/25LC640
(25XX640
*
)  is  a  64  Kbit  Serial  Electrically  Erasable
PROM  [EEPROM].  The  memory  is  accessed  via  a
simple  Serial  Peripheral  Interface  (SPI)  compatible
serial bus. The bus signals required are a clock input
(SCK)  plus  separate  data  in  (SI)  and  data  out  (SO)
lines. Access to the device is controlled through a Chip
Select (CS) input. 
Communication  to  the  device  can  be  paused  via  the
hold  pin  (HOLD).  While  the  device  is  paused,
transitions  on  its  inputs  will  be  ignored,  with  the
exception  of Chip  Select, allowing  the host to  service
higher priority interrupts. 
Block Diagram
Package Types
Part
Number
VCC
Range
Max Clock
Frequency
Temp
Ranges
25AA640 1.8-5.5V 1 MHz I
25LC640 2.5-5.5V 2 MHz I
25LC640 4.5-5.5V 3/2.5 MHz I, E
SI
SO
SCK
CS
HOLD
WP
I/O Control
Memory
Control
Logic
HV Generator
EEPROM
Array
Page 
Y Decoder
Sense Amp.
R/W Control
Logic
VCC
VSS
Latches
XDEC
STATUS
Register
2
5
X
X
6
4
0
2
5
X
X
6
4
0
PDIP/SOIC
TSSOP
CS
SO
WP
VSS
VCC
HOLD
SCK
SI
8
7
6
5
1
2
3
4
8
7
6
5
1
2
3
4
HOLD
VCC
CS
SO
SCK
SI
VSS
WP
64K SPI Bus Serial EEPROM
*25XX640 is used in this document as a generic part number for the 25AA640/25LC640 devices.
Not recommended for new designs 
Please use 25AA640A or 25LC640A.
25AA640/25LC640
DS21223H-page  2    2008 Microchip Technology Inc.
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
()
VCC.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. VSS ........................................................................................................ -0.6V to VCC + 1.0V
Storage temperature .................................................................................................................................-65C to 150C
Ambient temperature under bias...............................................................................................................-65C to 125C
ESD protection on all pins.......................................................................................................................................... 4 kV
TABLE 1-1: DC CHARACTERISTICS
  NOTICE: Stresses above  those listed under  Absolute Maximum Ratings may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
DC CHARACTERISTICS
Industrial (I): TA = -40C to +85C  VCC = 1.8V to 5.5V
Automotive (E): TA = -40C to +125C  VCC = 4.5V to 5.5V
Param.
No.
Sym Characteristics Min Max Units Conditions
D1 VIH1 High-level input 
voltage
2.0 VCC + 1 V VCC  2.7V (Note 1)
D2 VIH2 0.7 VCC VCC + 1 V VCC < 2.7V (Note 1)
D3 VIL1 Low-level input 
voltage
-0.3 0.8 V VCC  2.7V (Note 1)
D4 VIL2 -0.3 0.2 VCC V VCC < 2.7V (Note 1)
D5 VOL Low-level output 
voltage
 0.4 V IOL = 2.1 mA
 0.2 V IOL = 1.0 mA, VCC = < 2.5V
D6 VOH High-level output 
voltage
VCC - 0.5  V IOH = -400 A
D7 ILI Input leakage current  1 A CS = VCC, VIN = VSS TO VCC
D8 ILO Output leakage 
current
 1 A CS = VCC, VOUT = VSS TO VCC
D9 CINT Internal Capacitance
(all inputs and 
outputs)
 7 pF TA = 25C, CLK = 1.0 MHz,
VCC = 5.0V (Note 1)
D10 ICC Read Operating Current 
1
500
mA
A
VCC = 5.5V; FCLK = 3.0 MHz; 
SO = Open
VCC = 2.5V; FCLK = 2.0 MHz; 
SO = Open
D11 ICC Write 
5
3
mA
mA
VCC = 5.5V
VCC = 2.5V
D12 ICCS Standby Current 
5
1
A
A
CS = VCC = 5.5V, Inputs tied to VCC or 
VSS
CS = VCC = 2.5V, Inputs tied to VCC or 
VSS
Note 1: This parameter is periodically sampled and not 100% tested.
 2008 Microchip Technology Inc. DS21223H-page  3
25AA640/25LC640
TABLE 1-2: AC CHARACTERISTICS
AC CHARACTERISTICS
Industrial (I): TA = -40C to +85C VCC = 1.8V to 5.5V
Automotive (E): TA = -40C to +125C VCC = 4.5V to 5.5V
Param.
No.
Sym Characteristic Min Max Units Conditions
1 FCLK Clock Frequency 
3
2
1
MHz
MHz
MHz
VCC = 4.5V to 5.5V (Note 2)
VCC = 2.5V to 5.5V
VCC = 1.8V to 5.5V
2 TCSS CS Setup Time 100
250
500
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 5.5V
VCC = 1.8V to 5.5V
3 TCSH CS Hold Time 150
250
475
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 5.5V
VCC = 1.8V to 5.5V
4 TCSD CS Disable Time 500  ns
5 TSU Data Setup Time 30
50
50
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 5.5V
VCC = 1.8V to 5.5V
6 THD Data Hold Time 50
100
100
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 5.5V
VCC = 1.8V to 5.5V
7 TR CLK Rise Time  2 s (Note 1)
8 TF CLK Fall Time  2 s (Note 1)
9 THI Clock High Time 150
230
475
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 5.5V
VCC = 1.8V to 5.5V
10 TLO Clock Low Time 150
230
475
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 5.5V
VCC = 1.8V to 5.5V
11 TCLD Clock Delay Time 50  ns
12 TCLE Clock Enable Time 50  ns
13 TV Output Valid from    
Clock Low
150
230
475
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 5.5V
VCC = 1.8V to 5.5V
14 THO Output Hold Time 0  ns (Note 1)
15 TDIS Output Disable Time 
200
250
500
ns
ns
ns
VCC = 4.5V to 5.5V (Note 1)
VCC = 2.5V to 5.5V (Note 1)
VCC = 1.8V to 5.5V (Note 1)
16 THS HOLD Setup Time 100
100
200
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 5.5V
VCC = 1.8V to 5.5V
17 THH HOLD Hold Time 100
100
200
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 5.5V
VCC = 1.8V to 5.5V
18 THZ HOLD Low to Output 
High-Z
100
150
200
ns
ns
ns
VCC = 4.5V to 5.5V (Note 1)
VCC = 2.5V to 5.5V (Note 1)
VCC = 1.8V to 5.5V (Note 1)
19 THV HOLD High to Output 
Valid
100
150
200
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 5.5V
VCC = 1.8V to 5.5V
20 TWC Internal Write Cycle 
Time
 5 ms
21  Endurance 1M  E/W 
Cycles
(Note 3)
Note 1: This parameter is periodically sampled and not 100% tested.
2: FCLK max. = 2.5 MHz for TA > 85C.
3: This  parameter  is  not  tested  but  established  by  characterization.  For  endurance  estimates  in  a  specific  application,
please consult the Total Endurance Model which can be obtained from Microchips web site at: www.microchip.com.
25AA640/25LC640
DS21223H-page  4    2008 Microchip Technology Inc.
FIGURE 1-1: HOLD TIMING
FIGURE 1-2: SERIAL INPUT TIMING
FIGURE 1-3: SERIAL OUTPUT TIMING
CS
SCK
SO
SI
HOLD
17 16 16 17
19 18
Dont Care
5
High-Impedance
n + 2 n + 1 n n - 1 n
n + 2 n + 1 n n n - 1
CS
SCK
SI
SO
6 5
8
7
11
3
LSB In MSB In
High-Impedance
12
Mode 1,1
Mode 0,0
4
2
CS
SCK
SO
10 9
13
MSB Out LSB Out
3
15
Dont Care
SI
Mode 1,1
Mode 0,0
14
 2008 Microchip Technology Inc. DS21223H-page  5
25AA640/25LC640
TABLE 1-3: AC TEST CONDITIONS FIGURE 1-4: AC TEST CIRCUIT
AC Waveform: 
VLO = 0.2V
VHI = VCC  0.2V  (Note 1)
VHI = 4.0V  (Note 2)
Timing Measurement Reference Level
Input 0.5 VCC
Output 0.5 VCC
Note 1: For VCC  4.0V
2: For VCC > 4.0V
VCC
SO
100 pF
1.8 k
2.25 k
25AA640/25LC640
DS21223H-page  6    2008 Microchip Technology Inc.
2.0   PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1: PIN FUNCTION TABLE
2.1 Chip Select (CS)
A low level on this pin selects the device. A high level
deselects the device and forces it into Standby mode.
However,  a  programming  cycle  which  is  already
initiated or in progress will be completed, regardless of
the CS input signal. If CS is brought high, or remains
high  during  a  program  cycle,  the  device  will  go  into
Standby  mode  when  the  programming  cycle  is
complete. When the device is deselected, SO goes to
the  high-impedance  state,  allowing  multiple  parts  to
share the same SPI bus. A low-to-high transition on CS
after  a  valid  write  sequence  initiates  an  internal  write
cycle. After power-up, a high-to-low transition on CS is
required prior to any sequence being initiated.
2.2 Serial Output (SO)
The SO pin is used to transfer data out of the 25XX640.
During a read cycle, data is shifted out on this pin after
the falling edge of the serial clock.
2.3 Write-Protect (WP)
This pin is used in conjunction with the WPEN bit in the
STATUS  register  to  prohibit  writes  to  the  nonvolatile
bits  in  the  STATUS  register.  When  WP  is  low  and
WPEN is high, writing to the nonvolatile bits in the STA-
TUS register is disabled. All other operations function
normally.  When  WP  is  high,  all  functions,  including
writes  to  the  nonvolatile  bits  in  the  STATUS  register
operate normally. If the WPEN bit is set, WP low during
a STATUS register write sequence will disable writing
to  the  STATUS  register.  If  an  internal  write  cycle  has
already begun, WP going low will have no effect on the
write.
The WP pin function is blocked when the WPEN bit in
the  STATUS  register  is  low.  This  allows  the  user  to
install the 25XX640 in a system with WP pin grounded
and still  be  able  to  write to the STATUS  register.  The
WP pin functions will be enabled when the WPEN bit is
set high.
2.4 Serial Input (SI)
The  SI  pin  is  used  to  transfer  data  into  the  device.  It
receives  instructions,  addresses,  and  data.  Data  is
latched on the rising edge of the serial clock.
2.5 Serial Clock (SCK)
The  SCK  is  used  to  synchronize  the  communication
between  a  master  and  the  25XX640.  Instructions,
addresses, or data present on the SI pin are latched on
the rising edge of the clock input, while data on the SO
pin is updated after the falling edge of the clock input.
2.6 Hold (HOLD)
The HOLD pin is used to suspend transmission to the
25XX640 while in the middle of a serial sequence with-
out  having  to  retransmit  the  entire  sequence  over
again. It must be held high any time this function is not
being  used.  Once  the  device  is  selected  and  a  serial
sequence  is  underway,  the  HOLD  pin  may  be  pulled
low  to  pause  further  serial  communication  without
resetting the serial sequence. The HOLD pin must be
brought  low  while  SCK  is  low,  otherwise  the  HOLD
function will not be invoked until the next SCK high-to-
low  transition.  The  25XX640  must  remain  selected
during this sequence. The SI, SCK, and SO pins are in
a  high-impedance  state  during  the  time  the  device  is
paused and transitions on these pins will be ignored. To
resume serial communication, HOLD must be brought
high  while  the  SCK  pin  is  low,  otherwise  serial
communication  will  not  resume.  Lowering  the  HOLD
line at any time will tri-state the SO line.
Name PDIP SOIC TSSOP Description
CS 1 1 3 Chip Select Input
SO 2 2 4 Serial Data Output
WP 3 3 5 Write-Protect Pin
VSS 4 4 6 Ground
SI 5 5 7 Serial Data Input
SCK 6 6 8 Serial Clock Input
HOLD 7 7 1 Hold Input
VCC 8 8 2 Supply Voltage
 2008 Microchip Technology Inc. DS21223H-page  7
25AA640/25LC640
3.0   FUNCTIONAL DESCRIPTION
3.1 Principles Of Operation
The 25XX640 is a 8192 byte Serial EEPROM designed
to interface directly with the Serial Peripheral Interface
(SPI)  port  of  many  of  todays  popular  microcontroller
families,  including  Microchips  PIC16C6X/7X  micro-
controllers. It may also interface  with microcontrollers
that  do  not  have  a  built-in  SPI  port  by  using  discrete
I/O lines programmed properly with the software. 
The 25XX640 contains an 8-bit instruction register. The
device  is  accessed  via  the  SI  pin,  with  data  being
clocked in on the rising edge of SCK. The CS pin must
be low and  the HOLD  pin  must  be high for the  entire
operation. 
Table 3-1  contains  a  list  of  the  possible  instruction
bytes and format for device operation. All instructions,
addresses,  and  data  are  transferred  MSB  first,  LSB
last.
Data is sampled on the first rising edge of SCK after CS
goes  low.  If  the  clock  line  is  shared  with  other
peripheral devices on the SPI bus, the user can assert
the  HOLD  input  and  place  the  25XX640  in  HOLD
mode.  After  releasing  the  HOLD  pin,  operation  will
resume from the point when the HOLD was asserted.
3.2 Read Sequence
The  device  is  selected  by  pulling  CS  low.  The  8-bit
READ  instruction  is  transmitted  to  the  25XX640  fol-
lowed by the 16-bit address with the three MSBs of the
address being dont care bits. After the correct READ
instruction and address are sent, the data stored in the
memory  at  the  selected  address  is  shifted  out  on  the
SO  pin.  The  data  stored  in  the  memory  at  the  next
address can be read sequentially by continuing to pro-
vide clock pulses. The internal Address Pointer is auto-
matically incremented to the next higher address after
each  byte  of  data  is  shifted  out.  When  the  highest
address is reached (1FFFh), the address counter rolls
over  to  address  0000h  allowing  the  read  cycle  to  be
continued indefinitely. The read operation is terminated
by raising the CS pin (Figure 3-1).
3.3 Write Sequence
Prior to any attempt to write data to the 25XX640 array
or STATUS register, the write enable latch must be set
by  issuing  the  WREN  instruction  (Figure 3-4).  This  is
done  by  setting  CS  low  and  then  clocking  out  the
proper instruction into the 25XX640. After all eight bits
of  the  instruction  are  transmitted,  the  CS  must  be
brought high to  set  the write enable latch.  If the write
operation  is  initiated  immediately  after  the  WREN
instruction without CS being brought high, the data will
not  be  written  to  the  array  because  the  write  enable
latch will not have been properly set.
Once  the  write  enable  latch  is  set,  the  user  may
proceed  by  setting  the  CS  low,  issuing  a  WRITE
instruction, followed by the address, and then the data
to be written. Up to 32 bytes of data can be sent to the
25XX640  before  a  write  cycle  is  necessary.  The  only
restriction  is  that  all  of  the  bytes  must  reside  in  the
same page. A page address begins with XXX0 0000
and  ends  with  XXX1  1111.  If  the  internal  address
counter reaches XXX1 1111 and the clock continues,
the counter will roll back to the first address of the page
and overwrite any data in the page that may have been
written.
For the data to be actually written to the array, the CS
must be brought high after the Least Significant bit (D0)
of  the  n
th
  data  byte  has  been  clocked  in.  If  CS  is
brought high at any other time, the write operation will
not  be completed. Refer to Figure 3-2  and  Figure 3-3
for  more  detailed  illustrations  on  the  byte  write
sequence and  the  page  write  sequence, respectively.
While the write is in progress, the STATUS register may
be read to check the status of the WPEN, WIP, WEL,
BP1,  and  BP0  bits  (Figure 3-6).  A  read  attempt  of  a
memory  array  location  will  not  be  possible  during  a
write  cycle.  When  the  write  cycle  is  completed,  the
write enable latch is reset.
TABLE 3-1: INSTRUCTION SET
Instruction Name Instruction Format Description
READ   0000 0011 Read data from memory array beginning at selected address
WRITE   0000 0010 Write data to memory array beginning at selected address
WREN   0000 0110 Set the write enable latch (enable write operations)
WRDI   0000 0100 Reset the write enable latch (disable write operations)
RDSR   0000 0101 Read STATUS register
WRSR   0000 0001 Write STATUS register 
25AA640/25LC640
DS21223H-page  8    2008 Microchip Technology Inc.
FIGURE 3-1: READ SEQUENCE
FIGURE 3-2: BYTE WRITE SEQUENCE
FIGURE 3-3: PAGE WRITE SEQUENCE
SO
SI
SCK
CS
0 2 3 4 5 6 7 8 9 10 11 21 22 23 24 25 26 27 28 29 30 31 1
0   1 0 0 0 0 0   1 15 14 13 12 2 1 0
7 6 5 4 3 2 1 0
Instruction 16-bit Address
Data Out
High-Impedance
SO
SI
CS
0   0 0 0 0 0 0   1 15 14 13 12 2 1 0 7 6 5 4 3 2 1 0
Instruction 16-bit Address Data Byte
High-Impedance
Twc
SI
CS
9 10 11 21 22 23 24 25 26 27 28 29 30 31
0   0 0 0 0 0 0   1 15 14 13 12 2 1 0 7 6 5 4 3 2 1 0
Instruction 16-bit Address Data Byte 1
SCK
0 2 3 4 5 6 7 1 8
SI
CS
41 42 43 46 47
7 6 5 4 3 2 1 0
Data Byte n (32 max)
SCK
32 34 35 36 37 38 39 33 40
7 6 5 4 3 2 1 0
Data Byte 3
7 6 5 4 3 2 1 0
Data Byte 2
44 45
 2008 Microchip Technology Inc. DS21223H-page  9
25AA640/25LC640
3.4 Write Enable (WREN) and
Write Disable (WRDI)
The  25XX640  contains  a  write  enable  latch.  See
Table 3-3  for  the  Write-Protect  Functionality  Matrix.
This latch must be set before any write operation will be
completed internally. The WREN instruction will set the
latch, and the WRDI will reset the latch. 
The  following  is  a  list  of  conditions  under  which  the
write enable latch will be reset:
 Power-up
 WRDI instruction successfully executed
 WRSR instruction successfully executed
 WRITE instruction successfully executed
FIGURE 3-4: WRITE ENABLE SEQUENCE
FIGURE 3-5: WRITE DISABLE SEQUENCE
SCK
0 2 3 4 5 6 7 1
SI
High-Impedance
SO
CS
0   1 0   0   0   0   0 1
SCK
0 2 3 4 5 6 7 1
SI
High-Impedance
SO
CS
0   1 0   0   0   0   0 10
25AA640/25LC640
DS21223H-page  10    2008 Microchip Technology Inc.
3.5 Read Status Register Instruction 
(RDSR)
The Read Status Register instruction (RDSR) provides
access to the STATUS register. The STATUS register
may be read at any time, even during a write cycle. The
STATUS register is formatted as follows:
The Write-In-Process (WIP) bit indicates whether the
25XX640 is busy with a write operation. When set to a
1, a write is in progress, when set to a 0, no write is
in progress. This bit is read-only.
The Write Enable Latch (WEL) bit indicates the status
of  the  write  enable  latch.  When  set  to  a  1,  the  latch
allows writes to the array and STATUS register, when
set to a 0, the latch prohibits writes to the array and
STATUS  register.  The  state  of  this  bit  can  always  be
updated via the WREN or WRDI commands regardless
of the state of write protection on the STATUS register.
This bit is read-only.
The  Block  Protection  (BP0  and  BP1)  bits  indicate
which blocks are currently write-protected. These bits
are set by the user issuing the WRSR instruction. These
bits are nonvolatile.
See Figure 3-6 for RDSR timing sequence.
FIGURE 3-6: READ STATUS REGISTER TIMING SEQUENCE
7 6 5 4 3 2 1 0
WPEN X X X BP1 BP0 WEL WIP
SO
SI
CS
9 10 11 12 13 14 15
1   1 0 0 0 0 0   0
7 6 5 4 2 1 0
Instruction
Data from STATUS Register
High-Impedance
SCK
0 2 3 4 5 6 7 1 8
3
 2008 Microchip Technology Inc. DS21223H-page  11
25AA640/25LC640
3.6 Write Status Register Instruction 
(WRSR)
The Write Status Register instruction (WRSR) allows the
user  to  select  one  of  four  levels  of  protection  for  the
array by writing to the appropriate bits in the STATUS
register.  The  array  is  divided  up  into  four  segments.
The user has the ability to write-protect none, one, two,
or all four of the segments of the array. The partitioning
is controlled as shown in Table 3-2.
The Write-Protect Enable (WPEN) bit is a nonvolatile
bit that is available as an enable bit for the WP pin. The
Write-Protect  (WP)  pin  and  the  Write-Protect  Enable
(WPEN)  bit  in  the  STATUS  register  control  the  pro-
grammable  hardware  write-protect  feature.  Hardware
write protection is enabled when the WP pin is low and
the WPEN bit is high. Hardware write protection is dis-
abled when either the WP pin is high or the WPEN bit
is low. When the chip is hardware write-protected, only
writes to nonvolatile bits in the STATUS register are dis-
abled. See Table 3-3 for a matrix of functionality on the
WPEN bit.
See Figure 3-7 for WRSR timing sequence.
TABLE 3-2: ARRAY PROTECTION
FIGURE 3-7: WRITE STATUS REGISTER TIMING SEQUENCE
BP1 BP0
Array Addresses
Write-Protected
0   0 none
0   1 upper 1/4
(1800h-1FFFh)
1   0  upper 1/2
(1000h-1FFFh)
1   1 all
(0000h-1FFFh)
SO
SI
CS
9 10 11 12 13 14 15
0 1 0 0 0 0 0   0 7 6 5 4 2 1 0
Instruction Data to STATUS Register
High-Impedance
SCK
0 2 3 4 5 6 7 1 8
3
25AA640/25LC640
DS21223H-page  12    2008 Microchip Technology Inc.
3.7 Data Protection
The  following  protection  has  been  implemented  to
prevent inadvertent writes to the array:
 The write enable latch is reset on power-up
 A write enable instruction must be issued to set 
the write enable latch
 After a byte write, page write, or STATUS register 
write, the write enable latch is reset
 CS must be set high after the proper number of 
clock cycles to start an internal write cycle
 Access to the array during an internal write cycle 
is ignored and programming is continued
3.8 Power-On-State
The 25XX640 powers on in the following state:
 The device is in low-power Standby mode 
(CS= 1)
 The write enable latch is reset
 SO is in high-impedance state
 A high-to-low transition on CS is required to enter 
the active state
.
TABLE 3-3: WRITE-PROTECT FUNCTIONALITY MATRIX
WPEN WP WEL Protected Blocks Unprotected Blocks STATUS Register
X   X   0 Protected Protected Protected
0   X   1 Protected Writable Writable
1 Low   1 Protected Writable Protected
X High   1 Protected Writable Writable
 2008 Microchip Technology Inc. DS21223H-page  13
25AA640/25LC640
4.0 PACKAGING INFORMATION
4.1 Package Marking Information
* Standard  marking  consists  of  Microchip  part  number,  year  code,  week  code,  traceability  code  (facility
code,  mask  rev#,  and  assembly  code).  For  marking  beyond  this,  certain  price  adders  apply.  Please
check with your Microchip Sales Office.
XXXXXXXX
XXXXXNNN
YYWW
8-Lead PDIP (300 mil) Example:
8-Lead SOIC (150 mil) Example:
XXXXXXXX
XXXXYYWW
NNN
25LC640
/P017
0410
25LC640
I/SN0410
017
8-Lead TSSOP
Example:
XXXX
YYWW
NNN
5LCX
0410
017
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week 01)
NNN Alphanumeric traceability code
   Pb-free JEDEC designator for Matte Tin (Sn)
* This package is Pb-free. The Pb-free JEDEC designator (     )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be  carried  over  to  the  next  line,  thus  limiting  the  number  of  available
characters for customer-specific information.
3 e
3 e
25AA640/25LC640
DS21223H-page  14    2008 Microchip Technology Inc.
8-Lead PIastic DuaI In-Line (P) - 300 miI Body [PDIP]
Notes:
1.   Pin 1 visual index feature may vary, but must be located with the hatched area.
2.    Significant Characteristic.
3.   Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" per side.
4.   Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note:   For the most current package drawings, please see the Microchip Packaging Specification located at 
http://www.microchip.com/packaging
Units   NCHES
Dimension Limits   MN   NOM   MAX
Number of Pins   N   8
Pitch   e   .100 BSC
Top to Seating Plane   A         .210
Molded Package Thickness   A2   .115   .130   .195
Base to Seating Plane   A1   .015      
Shoulder to Shoulder Width   E   .290   .310   .325
Molded Package Width   E1   .240   .250   .280
Overall Length   D   .348   .365   .400
Tip to Seating Plane   L   .115   .130   .150
Lead Thickness   c   .008   .010   .015
Upper Lead Width   b1   .040   .060   .070
Lower Lead Width   b   .014   .018   .022
Overall Row Spacing     eB         .430
N
E1
NOTE 1
D
1   2   3
A
A1
A2
L
b1
b
e
E
eB
c
Microchip Technology Drawing C04-018B
 2008 Microchip Technology Inc. DS21223H-page  15
25AA640/25LC640
8-Lead PIastic SmaII OutIine (SN) - Narrow, 3.90 mm Body [SOIC]
Notes:
1.   Pin 1 visual index feature may vary, but must be located within the hatched area.
2.    Significant Characteristic.
3.   Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
4.   Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF:   Reference Dimension, usually without tolerance, for information purposes only.
Note:   For the most current package drawings, please see the Microchip Packaging Specification located at 
http://www.microchip.com/packaging
Units   MLLMETERS
Dimension Limits   MN   NOM   MAX
Number of Pins   N   8
Pitch   e   1.27 BSC
Overall Height   A         1.75
Molded Package Thickness   A2   1.25      
Standoff     A1   0.10      0.25
Overall Width   E   6.00 BSC
Molded Package Width   E1   3.90 BSC
Overall Length   D   4.90 BSC
Chamfer (optional)   h   0.25      0.50
Foot Length   L   0.40      1.27
Footprint   L1   1.04 REF
Foot Angle   I   0      8
Lead Thickness   c   0.17      0.25
Lead Width   b   0.31      0.51
Mold Draft Angle Top   D   5      15
Mold Draft Angle Bottom   E   5      15
D
N
e
E
E1
NOTE 1
1   2   3
b
A
A1
A2
L
L1
c
h
h
 DSCs, KEELOQ
 
code hopping 
devices, Serial EEPROMs, microperipherals, nonvolatile memory and 
analog products. In addition, Microchips quality system for the design 
and manufacture of development systems is ISO 9001:2000 certified.
DS21223H-page  24    2008 Microchip Technology Inc.
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WORLDWIDE SALES AND SERVICE
01/02/08