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Silicon Recovery Diodes 1N3208-1N3211R

This document provides specifications for the 1N3208 through 1N3211R silicon recovery diodes. The diodes feature high surge capability and operate from 50V to 300V with continuous forward current of 15A. Key specifications include repetitive peak reverse voltage, RMS reverse voltage, forward voltage, reverse current, thermal resistance, operating temperature range, and package dimensions.

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fernando he
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52 views4 pages

Silicon Recovery Diodes 1N3208-1N3211R

This document provides specifications for the 1N3208 through 1N3211R silicon recovery diodes. The diodes feature high surge capability and operate from 50V to 300V with continuous forward current of 15A. Key specifications include repetitive peak reverse voltage, RMS reverse voltage, forward voltage, reverse current, thermal resistance, operating temperature range, and package dimensions.

Uploaded by

fernando he
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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1N3208 thru 1N3211R

Silicon Standard VRRM = 50 V - 300 V


Recovery Diode IF = 15 A

Features
• High Surge Capability DO-5 Package
• Types from 50 V to 300 V VRRM
• Not ESD Sensitive
A C
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
C A
3. Stud is base.
Stud Stud
(R)

Maximum ratings, at Tj = 25 °C, unless otherwise specified


Parameter Symbol Conditions 1N3208 (R) 1N3209 (R) 1N3210 (R) 1N3211 (R) Unit

Repetitive peak reverse voltage VRRM 50 100 200 300 V


RMS reverse voltage VRMS 35 70 140 210 V
DC blocking voltage VDC 50 100 200 300 V
Continuous forward current IF TC ≤ 150 °C 15 15 15 15 A
Surge non-repetitive forward
IF,SM TC = 25 °C, tp = 8.3 ms 297 297 297 297 A
current, Half Sine Wave
Operating temperature Tj -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Storage temperature Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C

Electrical characteristics, at Tj = 25 °C, unless otherwise specified


Parameter Symbol Conditions 1N3208 (R) 1N3209 (R) 1N3210 (R) 1N3211 (R) Unit

Diode forward voltage VF IF = 15 A, Tj = 25 °C 1.5 1.5 1.5 1.5 V


VR = 50 V, Tj = 25 °C 10 10 10 10 μA
Reverse current IR
VR = 50 V, Tj = 150 °C 10 10 10 10 mA
Thermal characteristics
Thermal resistance, junction -
RthJC 0.65 0.65 0.65 0.65 °C/W
case

Oct. 2018 http://www.diodemodule.com/silicon_products/studs/1n3208.pdf 1


1N3208 thru 1N3211R

Oct. 2018 http://www.diodemodule.com/silicon_products/studs/1n3208.pdf 2


1N3208 thru 1N3211R

Package dimensions and terminal configuration

Product is marked with part number and terminal configuration.

M DO- 5 (DO-203AB)

B
G

C
F E

A C

C A
Stud Stud
(R)

Inches Millimeters

Min Max Min Max


A 1/4 –28 UNF
B 0.669 0.687 17.19 17.44
C ----- 0.794 ----- 20.16
D ----- 1.020 ----- 25.91
E 0.422 0.453 10.72 11.50
F 0.115 0.200 2.93 5.08
G ----- 0.460 ----- 11.68
J ----- 0.280 ----- 7.00
K 0.236 ----- 6.00 -----
M ----- 0.589 ----- 14.96
N ----- 0.063 ----- 1.60
P 0.140 0.175 3.56 4.45

Oct. 2018 http://www.diodemodule.com/silicon_products/studs/1n3208.pdf 3


Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

GeneSiC Semiconductor:
1N3208

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