BD676, BD676A, BD678,
BD678A, BD680, BD680A,
BD682, BD682T
Plastic Medium-Power
Silicon PNP Darlingtons
http://onsemi.com
This series of plastic, medium−power silicon PNP Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications. 4.0 AMP DARLINGTON
POWER TRANSISTORS
Features
PNP SILICON
• High DC Current Gain −
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
45, 60, 80, 100 VOLT, 40 WATT
• Monolithic Construction
• BD676, 676A, 678, 678A, 680, 680A, 682 are complementary COLLECTOR 2
with BD675, 675A, 677, 677A, 679, 679A, 681
• BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 BASE
3
• Pb−Free Package are Available*
MAXIMUM RATINGS EMITTER 1
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO Vdc
BD676, BD676A 45
BD678, BD678A 60
BD680, BD680A 80 TO−225AA
BD682 100 CASE 77
Collector-Base Voltage VCB Vdc STYLE 1
BD676, BD676A 45
BD678, BD678A 60 3 2
BD680, BD680A 80 1
BD682 100
Emitter-Base Voltage VEB 5.0 Vdc MARKING DIAGRAMS
Collector Current IC 4.0 Adc
Base Current IB 0.1 Adc YWW
YWW B
Total Device Dissipation PD
BD6xxG BD6xxG
@ TC = 25°C 40 W
Derate above 25°C 0.32 W/°C
Operating and Storage Junction TJ, Tstg −55 to +150 °C
Temperature Range
BD6xx = Device Code
THERMAL CHARACTERISTICS xx = 76, 76A, 78, 78A,
Characteristic Symbol Max Unit 80, 80A, 82, or 82T
Y = Year
Thermal Resistance, RqJC 3.13 °C/W
WW = Work Week
Junction−to−Case
G = Pb−Free Package
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and ORDERING INFORMATION
reliability may be affected. See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008 Publication Order Number:
September, 2008 − Rev. 13 BD676/D
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Breakdown Voltage (Note 1) BD676, 676A BVCEO 45 − Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 50 mAdc, IB = 0) BD678, 678A 60 −
BD680, 680A 80 −
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BD682 100 −
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0) ICEO − 500 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICBO mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCB = Rated BVCEO, IE = 0) − 0.2
(VCB = Rated BVCEO. IE = 0, TC = 100°C) − 2.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 2.0 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (Note 1) hFE
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 1.5 Adc, VCE = 3.0 Vdc) BD676, 678, 680, 682 750 − −
(IC = 2.0 Adc, VCE = 3.0 Vdc) BD676A, 678A, 680A 750 − −
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage (Note 1)
(IC = 1.5 Adc, IB = 30 mAdc) BD678, 680, 682 VCE(sat) − 2.5 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 2.0 Adc, IB = 40 mAdc) BD676A, 678A, 680A − 2.8
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage (Note 1) VBE(on) Vdc
(IC = 1.5 Adc, VCE = 3.0 Vdc) BD678, 680, 682 − 2.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 2.0 Adc, VCE = 3.0 Vdc) BD676A, 678A, 680A − 2.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
hfe 1.0 − −
50 5.0
45
PD, POWER DISSIPATION (WATTS)
IC, COLLECTOR CURRENT (AMP)
40 2.0
35
1.0
30
BONDING WIRE LIMIT
25 0.5 THERMAL LIMIT at TC = 25°C
20 SECONDARY BREAKDOWN LIMIT
15 0.2
BD676, 676A
10 TC = 25°C BD678, 678A
0.1 BD680, 680A
5.0
BD682
0 0.05
15 30 45 60 75 90 105 120 135 150 165 1.0 2.0 5.0 10 20 50 100
TC, CASE TEMPERATURE (°C) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Power Temperature Derating Figure 2. DC Safe Operating Area
There are two limitations on the power handling ability of At high case temperatures, thermal limitations will reduce
a transistor average junction temperature and secondary the power that can be handled to values less than the
breakdown. Safe operating area curves indicate IC − VCE limitations imposed by secondary breakdown.
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
http://onsemi.com
2
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
PNP COLLECTOR
BD676, 676A
BD678, 678A
BD680, 680A
BD682
BASE
[ 8.0 k [ 120
EMITTER
Figure 3. Darlington Circuit Schematic
ORDERING INFORMATION
Device Package Shipping
BD676 TO−225AA 500 Units / Box
BD676G TO−225AA 500 Units / Box
(Pb−Free)
BD676A TO−225AA 500 Units / Box
BD676AG TO−225AA 500 Units / Box
(Pb−Free)
BD678 TO−225AA 500 Units / Box
BD678G TO−225AA 500 Units / Box
(Pb−Free)
BD678A TO−225AA 500 Units / Box
BD678AG TO−225AA 500 Units / Box
(Pb−Free)
BD680 TO−225AA 500 Units / Box
BD680G TO−225AA 500 Units / Box
(Pb−Free)
BD680A TO−225AA 500 Units / Box
BD680AG TO−225AA 500 Units / Box
(Pb−Free)
BD682 TO−225AA 500 Units / Box
BD682G TO−225AA 500 Units / Box
(Pb−Free)
BD682T TO−225AA 50 Units / Rail
BD682TG TO−225AA 50 Units / Rail
(Pb−Free)
http://onsemi.com
3
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
PACKAGE DIMENSIONS
TO−225AA
CASE 77−09
ISSUE Z
NOTES:
−B− 1. DIMENSIONING AND TOLERANCING PER ANSI
U F C Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Q 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD
M 077-09.
−A−
INCHES MILLIMETERS
1 2 3 DIM MIN MAX MIN MAX
A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
H C 0.095 0.105 2.42 2.66
K D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
V J K 0.575 0.655 14.61 16.63
M 5 _ TYP 5 _ TYP
G R Q 0.148 0.158 3.76 4.01
S 0.25 (0.010) M A M B M R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
D 2 PL U 0.145 0.155 3.69 3.93
V 0.040 --- 1.02 ---
0.25 (0.010) M A M B M
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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4
