PD - 95170A

IRG4BC30SPbF
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

Features C

• Standard: optimized for minimum saturation

voltage and low operating frequencies ( < 1kHz) VCES = 600V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
G VCE(on) typ. = 1.4V
Generation 3
• Industry standard TO-220AB package
E @VGE = 15V, IC = 18A
• Lead-Free
n-channel

Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs

TO-220AB

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
I C @ TC = 25°C Continuous Collector Current 34
I C @ TC = 100°C Continuous Collector Current 18 A
I CM Pulsed Collector Current  68
I LM Clamped Inductive Load Current ‚ 68
V GE Gate-to-Emitter Voltage ± 20 V
E ARV Reverse Voltage Avalanche Energy ƒ 10 mJ
P D @ TC = 25°C Maximum Power Dissipation 100
W
PD @ TC = 100°C Maximum Power Dissipation 42
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.2
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient, typical socket mount ––– 80
Wt Weight 2.0 (0.07) ––– g (oz)
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IRG4BC30SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
V(BR)ECS Emitter-to-Collector Breakdown Voltage „ 18 — — V VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.75 — V/°C VGE = 0V, IC = 1.0mA
— 1.40 1.6 IC = 18A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage — 1.84 — IC = 34A See Fig.2, 5
V
— 1.45 — IC = 18A , TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance … 6.0 11 — S VCE = 100V, IC = 18A
— — 250 VGE = 0V, VCE = 600V
ICES Zero Gate Voltage Collector Current µA
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 50 75 IC = 18A
Qge Gate - Emitter Charge (turn-on) — 7.3 11 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) — 17 26 VGE = 15V
t d(on) Turn-On Delay Time — 22 —
tr Rise Time — 18 — TJ = 25°C
ns
td(off) Turn-Off Delay Time — 540 810 IC = 18A, VCC = 480V
tf Fall Time — 390 590 VGE = 15V, RG = 23Ω
Eon Turn-On Switching Loss — 0.26 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 3.45 — mJ See Fig. 9, 10, 14
E ts Total Switching Loss — 3.71 5.6
t d(on) Turn-On Delay Time — 21 — TJ = 150°C,
tr Rise Time — 19 — IC = 18A, VCC = 480V
ns
t d(off) Turn-Off Delay Time — 790 — VGE = 15V, RG = 23Ω
tf Fall Time — 760 — Energy losses include "tail"
E ts Total Switching Loss — 6.55 — mJ See Fig. 11, 14
LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Cies Input Capacitance — 1100 — VGE = 0V
Coes Output Capacitance — 72 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 13 — ƒ = 1.0MHz
Notes:

 Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω, „ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
(See fig. 13a) … Pulse width 5.0µs, single shot.
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.

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 IRG4BC30SPbF
50
For both: Triangular wave:
Duty cycle: 50%
TJ = 125°C I
40
Tsink = 90°C
Gate drive as specified
Load Current ( A )

Power Dissipation = 21 W Clamp voltage:

80% of rated
30
Square wave:
60% of rated
voltage
20
I

10
Ideal diodes

0 A
0.1 1 10 100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100 100
I C , Collector-to-Emitter Current (A)

I C, Collector-to-Emitter Current (A)

TJ = 25 o C

TJ = 150 o C TJ = 150 oC
10

10
TJ = 25 oC

V GE = 15V V CC = 50V
20µs PULSE WIDTH 5µs PULSE WIDTH
1 0.1
1 10 5 6 7 8 9 10
VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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 IRG4BC30SPbF
35 3.0
VGE = 15V
80 us PULSE WIDTH

VCE , Collector-to-Emitter Voltage(V)

30
Maximum DC Collector Current(A)

2.5 IC = 36 A
25

20
2.0
15

IC = 18 A
10
1.5

5 IC = 9.0
9AA

0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , Case Temperature ( ° C) TJ , Junction Temperature ( ° C)

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature

10
Thermal Response (Z thJC )

1
D = 0.50

0.20

0.10 PDM
0.1 0.05 t1
0.02 t2
0.01 SINGLE PULSE
(THERMAL RESPONSE) Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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 IRG4BC30SPbF
2000 20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED I C = 18A
Cres = Cgc

VGE , Gate-to-Emitter Voltage (V)

Coes = Cce + Cgc 16
1500
C, Capacitance (pF)

Cies
12

1000

500
Coes
4

Cres

0 0
1 10 100 0 10 20 30 40 50 60
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

3.80 100
V CC = 480V RG = 23OhmΩ
V GE = 15V VGE = 15V
TJ = 25 ° C VCC = 480V
3.76 I C = 18A
Total Switching Losses (mJ)

Total Switching Losses (mJ)

IC = 36 A
10
IC = 18 A
3.72
IC = 9.0
9AA

3.68
1

3.64

3.60 0.1
0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160
Ω
RG , Gate Resistance (Ohm) TJ , Junction Temperature ( °C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
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IRG4BC30SPbF
15.0 1000
RG Ω
= 23Ohm VGE = 20V
TJ = 150° C T J = 125 oC

I C , Collector-to-Emitter Current (A)

VCC = 480V
12.0 VGE = 15V
Total Switching Losses (mJ)

100
9.0

6.0
10

3.0

SAFE OPERATING AREA

0.0 1
0 10 20 30 40 50 1 10 100 1000
I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current

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 IRG4BC30SPbF
RL = VCC
ICM

L D.U.T.
VC *
50V
1000V 480µF
0 - VCC
c
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor Pulsed Collector Current
will increase to obtain rated Id.
Test Circuit
Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector
Load Test Circuit Current Test Circuit

IC
L
Driver* D.U.T. Fig. 14a - Switching Loss
VC Test Circuit
50V
1000V
c * Driver same type
as D.U.T., VC = 480V
d e

d
90%

e 10%

VC
90%
t d(off)
Fig. 14b - Switching Loss
Waveforms

10%
I C 5%
tr tf
t d(on) t=5µs
E on E off
E ts = (Eon +Eoff )

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IRG4BC30SPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

(;$03/( 7+,6,6$1,5)
/27&2'(
$66(0%/('21:: ,17(51$7,21$/ 3$57180%(5
,17+($66(0%/</,1(& 5(&7,),(5
/2*2
Note: "P" in assembly line
position indicates "Lead-Free" '$7(&2'(
$66(0%/< <($5 
/27&2'( :((.
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/2010

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