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2N3019 Motorola

This document provides specifications for the 2N3019 and 2N3020 NPN silicon annular transistors. These transistors are designed for high-current, high-frequency amplifier applications. The document lists maximum ratings, electrical characteristics, and dynamic characteristics for the transistors, including collector-emitter voltage, current, dissipation, gains, capacitances, and more. Specifications are provided over temperature ranges and current levels.

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Zulfiqar Ahmed
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104 views2 pages

2N3019 Motorola

This document provides specifications for the 2N3019 and 2N3020 NPN silicon annular transistors. These transistors are designed for high-current, high-frequency amplifier applications. The document lists maximum ratings, electrical characteristics, and dynamic characteristics for the transistors, including collector-emitter voltage, current, dissipation, gains, capacitances, and more. Specifications are provided over temperature ranges and current levels.

Uploaded by

Zulfiqar Ahmed
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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2N30 19 (SILICON)

2N3020

NPN silicon annular transistors designed for high-


current, high-frequency amplifier applications.
CASE 31
(TO·S)

Collector connected to case

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage VCEO 80 Vdc

Collector-Base Voltage VCB 140 Vdc

Emitter-Base Voltage VEB 7.0 Vdc

Collector Current IC l.0 Adc

Total Device Dissipation @ T A = 25°C PD 0.8 W


Derate above 25°C 4.6 mWrC

Total Device Dissipation @ TC = 25°C PD 5.0 W


Derate above 25°C 28.6 mWrC

Operating Junction Temperature Range TJ -65 to +200 °c

Storage Temperature Range Tstg -65 to + 200 °c

2-403
2N3019, 2N3020 (continued)

ELECTRICAL CHARACTERISTICS (At 2SoC unless otherwise noted)

Characteristic Symbol Min Max Unit


OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage \11 BVCEO Vde
(Ic = 30 mAde, IB = 0) 80 -
Collector-Base Breakdown Voltage BVCBO Vde
(IC = 100 IlAde, IE = 0) 140 -
Emitter-B~se Breakdown Voltage BV EBO Vde
(IE = 100 IlAde, IC = 0) 7.0 -
Collector Cutoff Current ICBO IlAde
(VCB = 90 Vde, IE = 0) - 0.010
(VCB = 90 Vde, IE = 0, T A = 150"C) - 10

Emitter Cutoff Current lEBO IlAde


(V BE = 5 Vde, IC = 0) - 0.010

ON CHARACTERISTICS
DC Current Gain \11 hFE -
(IC = 0.1 mAde, VCE = 10 Vde) 2N3019 50 -
2N3020 30 100
, (IC = 10 mAc, VeE = 10 Vde) 2N3019 90 -
2N3020 40 120
(IC = 150 mAde, VCE = HI. Vde) 2N3019 100 300
2N3020 40 120
(Ie = 150 mAde, VCE = 10 Vde, TC = -55"C) 2N3019 40 -
(IC = 500 mAde, VCE = 10 Vde) 2N3019
2N3020
50
30
-
100
(IC = 1 Adc, VCE = 10 Vde) Both Types 15 -
Collector-Emitter Saturation Voltage 111 VCE(sat) Vde
(IC = l50mAde, IB = 15 mAde) - 0.2
(IC = 500 mAde, IB = 50 mAde) - 0.5

Base-Emitter Saturation Voltage'{l1 Vde


VBE(sat)
(Ie = 150mAde, Is = 15 mAde) - 1.1

DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product fT MHz
(IC = 50 mAde, VCE = 10 Vde, f = 20 MHz) 2N3019 100 -
2N3020 80
Output Capacitance Cob pF
(Vcs = 10 Vde, IE = 0, f = 1 MHz) - 12

Input Capacitance C ib pF
(V BE = O. 5 Vde, IC = O. f = 1 MHz) - 60

Small-Signal Current Gain h fe -


(Ic = lmAde, VCE = 5 Vde, f = 1 kHz) 2N3019 80 400
2N3020 30 200

Collector-Base Time Constant r'C


ps
(I C = 10 mAde, V CE = 10 Vde, f = 4 MHz) be
- 400

Noise Figure NF dB
(IC = 100 IlAdc, VCE = 10 Vde, f = 1 kHz, RS =1 kohm) 2N3019 - 4.0
111 Pulse Test: Pulse Width ~ 300 IlS, duty cycle ~ 1%

2-404

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